Patents by Inventor Hyeon-Sik Kim
Hyeon-Sik Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200058723Abstract: A display device includes a substrate, a semiconductor layer on the substrate, a first insulating layer on the semiconductor layer, a first conductive layer on the semiconductor layer, a second insulating layer on the first conductive layer, a first contact hole penetrating the first insulating layer and the second insulating layer, a second conductive layer on the second insulating layer, connected to the semiconductor layer through the first contact hole, and including a hydrogen barrier material, and a third insulating layer on the second conductive layer.Type: ApplicationFiled: March 28, 2019Publication date: February 20, 2020Inventors: Wang Woo LEE, Moo Soon KO, Hyeon Sik KIM, Young Woo PARK, Se Wan SON, Jin Sung AN, Min Woo WOO, Seong Jun LEE, Jeong Soo LEE, Ji Seon LEE, Deuk Myung JI
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Publication number: 20190386084Abstract: A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.Type: ApplicationFiled: August 29, 2019Publication date: December 19, 2019Inventors: Hye-Hyang PARK, Joo-Hee JEON, Seung-Ho JUNG, Chaun-Gi CHOI, Hyeon-Sik KIM, Hui-Won YANG, Eun-Young LEE
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Publication number: 20190296153Abstract: A thin film transistor array panel includes a substrate, a first gate electrode on the substrate, a semiconductor layer on the first gate electrode, the semiconductor layer including a drain region, a source region, a lightly doped drain (LDD) region, and a channel region, a second gate electrode on the semiconductor layer, the first gate electrode and the second gate electrode each overlapping the channel region, a control gate electrode that overlaps the LDD region, and a source electrode and a drain electrode respectively connected with the source region and the drain region of the semiconductor layer.Type: ApplicationFiled: March 15, 2019Publication date: September 26, 2019Inventors: Do Hyung KIM, Gun Hee KIM, Hyeon Sik KIM, Sang Ho PARK, Joo Hee JEON
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Patent number: 10418431Abstract: A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.Type: GrantFiled: January 26, 2017Date of Patent: September 17, 2019Assignee: Samsung Display Co., Ltd.Inventors: Hye-Hyang Park, Joo-Hee Jeon, Seung-Ho Jung, Chaun-Gi Choi, Hyeon-Sik Kim, Hui-Won Yang, Eun-Young Lee
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Patent number: 10347699Abstract: Disclosed herein is an organic light emitting diode display, including: an insulating substrate including a display area in which a plurality of pixels are formed and a peripheral area positioned around the display area; a touch signal transfer wiring positioned in the peripheral area on the insulating substrate; an insulating layer formed on the insulating substrate, the insulating layer covering the touch signal transfer wiring and including a protrusion and an opening through which the touch signal transfer wiring is partially exposed; a connection conductor connected to the touch signal transfer wiring through the opening; an encapsulation substrate including a touch area corresponding to the display area and a peripheral area positioned around the touch area; a touch electrode layer positioned under the touch area of the encapsulation substrate; and a touch wiring connected to the touch electrode layer and positioned under the peripheral area of the encapsulation substrate.Type: GrantFiled: October 9, 2015Date of Patent: July 9, 2019Assignee: Smsung Display Co., Ltd.Inventors: Oh June Kwon, Seung Yong Song, Hyeon Sik Kim
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Patent number: 10249843Abstract: A display device includes a substrate including a first area displaying an image and a second area adjacent to the first area, the second area transmitting external light, a first electrode and a second electrode disposed in the first area and overlapping each other, an emission layer disposed between the first electrode and the second electrode in the first area, a first semiconductor layer disposed in the first area, and a second semiconductor layer disposed in the second area.Type: GrantFiled: September 19, 2016Date of Patent: April 2, 2019Assignee: Samsung Display Co., Ltd.Inventors: Hui-Won Yang, Hyeon Sik Kim, Hye Hyang Park, Eun Young Lee, Joo Hee Jeon
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Patent number: 10120031Abstract: A charge and discharge test probe for a secondary battery includes: an inner plunger moved up and down by elastic force of a spring; a head having a central through hole through which the inner plunger passes to protrude from an upper end of the head; and a first conductive elastic member mounted to the head.Type: GrantFiled: May 17, 2017Date of Patent: November 6, 2018Assignee: MEGATOUCH CO., LTD.Inventors: Woo Yong Choi, Byung Il Lee, Hyeon Sik Kim
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Patent number: 10068923Abstract: A transparent display device includes a base substrate having a pixel area and a transmission area, a barrier layer disposed on the base substrate, a pixel circuit disposed in the pixel area, a display structure disposed on the pixel circuit, a transmitting structure disposed in the transmission area, an adhesive layer disposed between the base substrate and the barrier layer, and between the base substrate and the transmitting structure, and a transmitting window defined in the transmission area where the transmitting structure may include a composition including silicon oxynitride, the adhesive layer may include aluminum oxide, and the transmitting window may expose a surface of the transmitting structure.Type: GrantFiled: June 23, 2016Date of Patent: September 4, 2018Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Seung-Ho Jung, Chaun-Gi Choi, Hyeon-Sik Kim, Hye-Young Park, Hye-Hyang Park, Hui-Won Yang, Eun-Young Lee, Joo-Hee Jeon, Su-Kyoung Yang, Chan-Woo Yang
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Publication number: 20170248659Abstract: A charge and discharge test probe for a secondary battery includes: an inner plunger moved up and down by elastic force of a spring; a head having a central through hole through which the inner plunger passes to protrude from an upper end of the head; and a first conductive elastic member mounted to the head.Type: ApplicationFiled: May 17, 2017Publication date: August 31, 2017Inventors: Woo Yong CHOI, Byung Il LEE, Hyeon Sik KIM
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Publication number: 20170221976Abstract: A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.Type: ApplicationFiled: January 26, 2017Publication date: August 3, 2017Inventors: Hye-Hyang PARK, Joo-Hee JEON, Seung-Ho JUNG, Chaun-Gi CHOI, Hyeon-Sik KIM, Hui-Won YANG, Eun-Young LEE
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Patent number: 9685122Abstract: A pixel circuit and a display device having the pixel circuit are disclosed. One inventive aspect includes a switching thin-film TFT and a light sensing TFT. The switching thin-film TFT includes a first source electrode electrically connected to a data line. A first gate electrode of the switching thin-film TFT and a second source electrode of the light sensing TFT are electrically connected to a first gate line. A first drain electrode of the switching thin-film TFT and a second drain electrode of the light sensing TFT are electrically connected to a pixel electrode.Type: GrantFiled: November 19, 2014Date of Patent: June 20, 2017Assignee: Samsung Display Co., Ltd.Inventors: Ji-Hun Lim, Hyeon-Sik Kim, Yeon-Gon Mo, Byung-Du Ahn, Hyang-Shik Kong
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Publication number: 20170092894Abstract: A display device includes a substrate including a first area displaying an image and a second area adjacent to the first area, the second area transmitting external light, a first electrode and a second electrode disposed in the first area and overlapping each other, an emission layer disposed between the first electrode and the second electrode in the first area, a first semiconductor layer disposed in the first area, and a second semiconductor layer disposed in the second area.Type: ApplicationFiled: September 19, 2016Publication date: March 30, 2017Inventors: Hui-Won YANG, Hyeon Sik Kim, Hye Hyang Park, Eun Young Lee, Joo Hee Jeon
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Publication number: 20170084635Abstract: A transparent display device includes a base substrate having a pixel area and a transmission area, a barrier layer disposed on the base substrate, a pixel circuit disposed in the pixel area, a display structure disposed on the pixel circuit, a transmitting structure disposed in the transmission area, an adhesive layer disposed between the base substrate and the barrier layer, and between the base substrate and the transmitting structure, and a transmitting window defined in the transmission area where the transmitting structure may include a composition including silicon oxynitride, the adhesive layer may include aluminum oxide, and the transmitting window may expose a surface of the transmitting structure.Type: ApplicationFiled: June 23, 2016Publication date: March 23, 2017Inventors: Seung-Ho JUNG, Chaun-Gi CHOI, Hyeon-Sik KIM, Hye-Young PARK, Hye-Hyang PARK, Hui-Won YANG, Eun-Young LEE, Joo-Hee JEON, Su-Kyoung YANG, Chan-Woo YANG
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Patent number: 9570624Abstract: A thin film transistor includes a gate electrode, a gate insulating layer, an oxide semiconductor layer, an oxide buffer layer, a protective layer, and source and drain electrodes. The gate electrode is formed on a substrate. The gate insulating layer is formed on the substrate. The oxide semiconductor layer is formed on the gate insulating layer and includes a source, a channel and a drain region. The oxide buffer layer is formed on the oxide semiconductor layer, and has a carrier concentration lower than that of the oxide semiconductor layer. The protective layer is formed on the oxide buffer layer and the gate insulating layer, and has contact holes formed therein so that the oxide buffer layer in the source and drain regions are exposed therethrough. The source and drain electrodes are coupled with the oxide buffer layer in the source and drain regions through the contact holes.Type: GrantFiled: February 12, 2015Date of Patent: February 14, 2017Assignee: Samsung Display Co., Ltd.Inventors: Woong-Hee Jeong, Sun-Kwang Kim, Hyeon-Sik Kim, Byung-Du Ahn, Chaun-Gi Choi
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Patent number: 9502246Abstract: A method of forming an oxide semiconductor device may be provided. In the method, a substrate comprising a first major surface and a second major surface that faces away from the first major surface may be provided. An oxide semiconductor device may be formed over the first major surface to provide an intermediate device, and the semiconductor device may comprise an oxide active layer. The intermediate device may be subjected to ultraviolet (UV) light (e.g., ultraviolet ray irradiation process) for a first period, and subjected to heat (e.g., thermal treatment process) for a second period. The first and second periods may at least partly overlap.Type: GrantFiled: August 8, 2014Date of Patent: November 22, 2016Assignees: Samsung Display Co., Ltd., University-Industry Foundation (UIF), Yonsei UniversityInventors: Yeon-Hong Kim, Byung-Du Ahn, Hyeon-Sik Kim, Yeon-Gon Mo, Ji-Hun Lim, Hyun-Jae Kim
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Publication number: 20160218151Abstract: Disclosed herein is an organic light emitting diode display, including: an insulating substrate including a display area in which a plurality of pixels are formed and a peripheral area positioned around the display area; a touch signal transfer wiring positioned in the peripheral area on the insulating substrate; an insulating layer formed on the insulating substrate, the insulating layer covering the touch signal transfer wiring and including a protrusion and an opening through which the touch signal transfer wiring is partially exposed; a connection conductor connected to the touch signal transfer wiring through the opening; an encapsulation substrate including a touch area corresponding to the display area and a peripheral area positioned around the touch area; a touch electrode layer positioned under the touch area of the encapsulation substrate; and a touch wiring connected to the touch electrode layer and positioned under the peripheral area of the encapsulation substrate.Type: ApplicationFiled: October 9, 2015Publication date: July 28, 2016Inventors: Oh June KWON, Seung Yong SONG, Hyeon Sik KIM
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Publication number: 20150243793Abstract: A thin film transistor includes a gate electrode, a gate insulating layer, an oxide semiconductor layer, an oxide buffer layer, a protective layer, and source and drain electrodes. The gate electrode is formed on a substrate. The gate insulating layer is formed on the substrate. The oxide semiconductor layer is formed on the gate insulating layer and includes a source, a channel and a drain region. The oxide buffer layer is formed on the oxide semiconductor layer, and has a carrier concentration lower than that of the oxide semiconductor layer. The protective layer is formed on the oxide buffer layer and the gate insulating layer, and has contact holes formed therein so that the oxide buffer layer in the source and drain regions are exposed therethrough. The source and drain electrodes are coupled with the oxide buffer layer in the source and drain regions through the contact holes.Type: ApplicationFiled: February 12, 2015Publication date: August 27, 2015Inventors: Woong-Hee Jeong, Sun-Kwang Kim, Hyeon-Sik Kim, Byung-Du Ahn, Chaun-Gi Choi
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Publication number: 20150145840Abstract: A pixel circuit and a display device having the pixel circuit are disclosed. One inventive aspect includes a switching thin-film TFT and a light sensing TFT. The switching thin-film TFT includes a first source electrode electrically connected to a data line. A first gate electrode of the switching thin-film TFT and a second source electrode of the light sensing TFT are electrically connected to a first gate line. A first drain electrode of the switching thin-film TFT and a second drain electrode of the light sensing TFT are electrically connected to a pixel electrode.Type: ApplicationFiled: November 19, 2014Publication date: May 28, 2015Inventors: Ji-Hun LIM, Hyeon-Sik KIM, Yeon-Gon MO, Byung-Du AHN, Hyang-Shik KONG
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Publication number: 20150144952Abstract: A display substrate, method of manufacturing the same, and a display device including the same are disclosed. In one aspect, a display substrate includes a first gate electrode formed on a base substrate, a scan line electrically connected to the first gate electrode, a gate insulation layer, an etch stop layer and a passivation layer formed on the base substrate to at least partially overlap the first gate electrode and the scan line, and a data line formed on the passivation layer to at least partially overlap the scan line.Type: ApplicationFiled: October 22, 2014Publication date: May 28, 2015Inventors: Sun-Kwang Kim, Chaun-Gi Choi, Dong-Han Kang, Jae-Sik Kim, Hyeon-Sik Kim, Woong-Hee Jeong
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Publication number: 20150140699Abstract: A method of forming an oxide semiconductor device may be provided. In the method, a substrate comprising a first major surface and a second major surface that faces away from the first major surface may be provided. An oxide semiconductor device may be formed over the first major surface to provide an intermediate device, and the semiconductor device may comprise an oxide active layer. The intermediate device may be subjected to ultraviolet (UV) light (e.g., ultraviolet ray irradiation process) for a first period, and subjected to heat (e.g., thermal treatment process) for a second period. The first and second periods may at least partly overlap.Type: ApplicationFiled: August 8, 2014Publication date: May 21, 2015Inventors: Yeon-Hong Kim, Byung-Du AHN, Hyeon-Sik KIM, Yeon-Gon MO, Ji-Hun LIM, Hyun-Jae KIM