Abstract: Provided is a tactile information supply module. The tactile information supply module includes a receiver for receiving message information from the outside, a controller for converting the message information into a tactile signal, and an operator for providing tactile information to a user based on the tactile signal, wherein the operator includes at least one tactile sensation provider comprising magnetic particles and a matrix material, and wherein the tactile sensation provider is transformed in response to an external magnetic field to provide the tactile information.

Abstract: The present invention relates to a tactile information providing device. The tactile information providing device according to the present invention comprises a tactile transmission unit (1: 10, 20) formed of a magneto-rheological elastomer (MRE) material, wherein the tactile transmission unit (1) provides tactile information through the transformation (10a-10d, 20a-20d) by an external magnetic field.

Abstract: Provided is a tactile information supply module. The tactile information supply module includes a receiver for receiving message information from the outside, a controller for converting the message information into a tactile signal, and an operator for providing tactile information to a user based on the tactile signal, wherein the operator includes at least one tactile sensation provider comprising magnetic particles and a matrix material, and wherein the tactile sensation provider is transformed in response to an external magnetic field to provide the tactile information.

Abstract: A light emitting device includes a first electrode, a first semiconductor layer disposed on the first electrode and including a first conductive dopant, a second semiconductor layer disposed on the first semiconductor layer and including the first conductive dopant having a doping concentration lower than a doping concentration of the first semiconductor layer, a third semiconductor layer disposed on the second semiconductor layer to adjust stress, a first conductive semiconductor layer on the third semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer; and a second electrode on the second conductive semiconductor layer, the third semiconductor layer has a doping concentration in a range between the doping concentration of the second semiconductor layer and a doping concentration of the first conductive semiconductor layer, and the doping concentration of the third semiconductor layer is increased toward the first conducti

Abstract: A seat rail apparatus for a vehicle may include a guide rail fixedly installed along a lower rail mounted to a bottom surface of the vehicle, a lock assembly installed to be movable along the guide rail in an unlocked state and selectively locked and unlocked with and from the guide rail as a locking pin is moved forwards and rearwards, a driving assembly integrally installed at an upper rail mounted to a cushion frame, wherein the driving assembly locks and unlocks the lock assembly with and from the guide rail by operating the locking pin and locks and unlocks the lock assembly such that the lock assembly is operated integrally with the lock assembly according to a walk-in lever, and a stopper provided at the upper rail, for contacting the lock assembly locked with the guide rail when the seat returns after a walk-in operation to stop the seat.

Abstract: Provided is a tactile supply device for transferring various types of tactile sensations to a user using tactile sensation providers that include magnetic particles. The tactile supply device includes tactile sensation providers made of magnetic particles and a matrix material, and a magnetic field generator for generating a magnetic field to transform the tactile sensation providers.

Abstract: A light emitting device includes a first electrode, a first semiconductor layer disposed on the first electrode and including a first conductive dopant, a second semiconductor layer disposed on the first semiconductor layer and including the first conductive dopant having a doping concentration lower than a doping concentration of the first semiconductor layer, a third semiconductor layer disposed on the second semiconductor layer to adjust stress, a first conductive semiconductor layer on the third semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer; and a second electrode on the second conductive semiconductor layer, the third semiconductor layer has a doping concentration in a range between the doping concentration of the second semiconductor layer and a doping concentration of the first conductive semiconductor layer, and the doping concentration of the third semiconductor layer is increased toward the first conducti

Abstract: A headrest apparatus for an MPV includes a headrest that can be automatically completely housed in a storage space in such a way as to slide without requiring a user to perform an additional operation of pushing the headrest downwards, thus being more convenient for the user. The headrest apparatus has a simple structure and a reduced size, thus reducing the weight of the vehicle. The headrest apparatus includes a headrest sliding unit, a sinking seat folding unit, and a seat support frame supporting a sinking seat on a floor of the MPV, wherein, when the sinking seat is housed in a seat storage space formed in the floor of the MPV, the upper surface of the sinking seat that is in a housed state is level with the upper surface of the floor of the MPV.

Abstract: A walk-in apparatus for vehicle seats can be constructed of parts required to realize the walk-in operation, thus reducing the production cost and the weight of the apparatus. Moreover, apparatus can reduce the volume of the entire apparatus so that it can be easily applied even to a small-sized seat, for example, that of a small vehicle.

Abstract: A storage apparatus for a seat of a vehicle, in which the seat is stored in a storage space formed therebelow, so that it is possible to secure a wider luggage space as compare with the related art and reduce unit cost without using a separate slide rail. In addition, the storage apparatus variously uses the space of a back seat when shifted between a passenger space (seating mode) and a luggage space (luggage mode) of the multi-functional back seat, which is vertically movable and foldable.

Abstract: A seat rail apparatus for a vehicle may include a guide rail fixedly installed along a lower rail mounted to a bottom surface of the vehicle, a lock assembly installed to be movable along the guide rail in an unlocked state and selectively locked and unlocked with and from the guide rail as a locking pin is moved forwards and rearwards, a driving assembly integrally installed at an upper rail mounted to a cushion frame, wherein the driving assembly locks and unlocks the lock assembly with and from the guide rail by operating the locking pin and locks and unlocks the lock assembly such that the lock assembly is operated integrally with the lock assembly according to a walk-in lever, and a stopper provided at the upper rail, for contacting the lock assembly locked with the guide rail when the seat returns after a walk-in operation to stop the seat.

Abstract: A headrest apparatus for an MPV includes a headrest that can be automatically completely housed in a storage space in such a way as to slide without requiring a user to perform an additional operation of pushing the headrest downwards, thus being more convenient for the user. The headrest apparatus has a simple structure and a reduced size, thus reducing the weight of the vehicle. The headrest apparatus includes a headrest sliding unit, a sinking seat folding unit, and a seat support frame supporting a sinking seat on a floor of the MPV, wherein, when the sinking seat is housed in a seat storage space formed in the floor of the MPV, the upper surface of the sinking seat that is in a housed state is level with the upper surface of the floor of the MPV.

Abstract: A storage apparatus for a seat of a vehicle, in which the seat is stored in a storage space formed therebelow, so that it is possible to secure a wider luggage space as compare with the related art and reduce unit cost without using a separate slide rail. In addition, the storage apparatus variously uses the space of a back seat when shifted between a passenger space (seating mode) and a luggage space (luggage mode) of the multi-functional back seat, which is vertically movable and foldable.

Abstract: A memory system includes a memory including a predetermined information storage space, a general data block in which pieces of general data are stored in the information storage space of the memory, and a metadata block in which metadata related to the pieces of general data is stored in the information storage space of the memory. The metadata corresponding to at least one piece of general data is grouped and stored in the metadata block.

Abstract: A walk-in apparatus for vehicle seats can be constructed of parts required to realize the walk-in operation, thus reducing the production cost and the weight of the apparatus. Moreover, apparatus can reduce the volume of the entire apparatus so that it can be easily applied even to a small-sized seat, for example, that of a small vehicle.

Abstract: Disclosed is a method for forming a buffer layer for growing gallium nitride single crystals on a sapphire substrate using hydride vapor phase epitaxy (HVPE), wherein the buffer layer is formed in the form of a doped vertical gallium nitride (GaN) single crystal film with a nanoporosity of 0.10 to 0.15 ?m on the sapphire substrate by reacting HCl and NH3 as a Group III/V mix gas. The nanoporous buffer layer interposed on the interface between the sapphire substrate and gallium nitride reduces tensile stress generated by the difference in thermal expansion coefficient between gallium nitride and the sapphire substrate, enables growth of the gallium nitride layer to a thickness of 1 micrometer (?m) to several millimeters (mm) without causing cracks, and reduces the lattice constant difference to improve crystallinity.

Abstract: Provided is a resistive memory device that can be integrated with a high integration density and method of forming the same. In an embodiment, a bit line is formed of copper using a damascene technique, and when the copper bit line, a copper stud may be formed around the copper bit line.

Abstract: A method of programming a non-volatile memory including N-bit multi-level cell (MLC) memory includes executing an incremental step pulse programming (ISPP) operation on the MLC memory cells, where the ISPP operation includes a programming sequence of first through Nth page programming operations, where N is an integer of 2 or more. The programming sequence further includes an erase programming that is executed after the (N?1)th page programming operation and before the Nth page programming operation, where the erase page programming increases a threshold voltage distribution of erase cells among the MLC memory cells.

Abstract: A memory device comprises a plurality of memory cells, each memory cell comprising a memory cell material that has an initial resistance that is determined in response to an applied programming current in a programming operation, the resistance of the memory cell varying from the initial resistance over a time period following the programming operation, and each memory cell being connected to a conduction line of the memory device that is used to apply the programming current to program the resistance of the corresponding memory cell in the programming operation and that is used to apply a read current to read the resistance of the corresponding memory cell in a read operation. A modification circuit modifies the resistance of a memory cell of the plurality of memory cells selected for a read operation to return its resistance to near the initial resistance prior to a read operation of the memory cell.

Abstract: A phase-change random-access memory (PRAM) device includes a chalcogenide element, the chalcogenide element comprising a material which can assume a crystalline state or an amorphous state upon application of a heating current. A first contact is connected to a first region of the chalcogenide element and has a first cross-sectional area. A second contact is connected to a second region of the chalcogenide element and having a second cross-sectional area. A first programmable volume of the chalcogenide material is defined in the first region of the chalcogenide element, a state of the first programmable volume being programmable according to a resistance associated with the first contact. A second programmable volume of the chalcogenide material is defined in the second region of the chalcogenide element, a state of the second programmable volume being programmable according to a second resistance associated with the second contact.