Abstract: A display device includes: a substrate including a first light emitting region, a second light emitting region, a third light emitting region, and a light blocking region configured to partition the first to third light emitting regions; a plurality of light emitting elements on the substrate and respectively located in the first light emitting region, the second light emitting region, and the third light emitting region; a planarization layer on the plurality of light emitting elements; a wavelength conversion layer on the planarization layer and including wavelength conversion parts, a light transmitting part, and a color conversion member; and a color filter layer on the wavelength conversion layer and including a color filter, and the wavelength conversion parts are located in each of the first light emitting region and the second light emitting region, the light transmitting part is located in the third light emitting region.

Abstract: A process for producing olefins comprising the steps of separating the liquid oil in the fractionator to produce a light oil product; separating the light oil product in the extractor to produce a paraffin fraction stream; increasing a pressure of the paraffin fraction stream in a paraffin pump to produce a pressurized paraffin stream; mixing the pressurized paraffin stream with a pressurized water feed in the water mixer to produce a paraffin-containing water stream; heating the paraffin-containing water stream in the water heater to produce a hot paraffin-water stream, wherein a temperature of the hot paraffin-water stream is greater than 450 deg C., wherein the short chain paraffins are operable to crack at the temperature of the hot paraffin-water stream; mixing the hot paraffin-water stream and the hot feedstock in the feed mixer to produce a mixed feed stream; and introducing the mixed feed stream to the supercritical unit.

Abstract: A display device includes: a display layer having a display area including a plurality of pixel areas and a peripheral area at least partially surrounding the display area; and a cover layer disposed on the display layer to encapsulate the display area. The cover layer includes: a light blocking portion overlapping the display area and the peripheral area and including a plurality of openings to transmit light from the plurality of pixel areas and to block light in the peripheral area; a first protrusion disposed on the light blocking portion in the peripheral area and surrounding the display area; and an overcoating layer covering the display area and contacting a lateral surface of the first protrusion.

Abstract: A memory system according to the present technology may include a plurality of memory devices including a plurality of memory devices including a plurality of blocks configured of memory cells and a memory controller configured to control the plurality of memory devices corresponding to a plurality of zones by configuring the plurality of zones with the plurality of blocks included in each of the plurality of memory devices, wherein the memory controller is further configured to: receive a write request from a host, determine a target zone indicated by the write request among the plurality of zones, and determine a logical address of the target zone on which a write operation is to be started based on a write pointer and an offset corresponding to the target zone.

Abstract: A semiconductor device includes a plurality of first gate electrodes sequentially stacked on a substrate, a second gate electrode on the plurality of first gate electrodes, a first channel structure extending through the plurality of first gate electrodes and a portion of the second gate electrode, a buried insulation pattern on a sidewall of the first channel structure, of which an upper surface is at a higher level than a top end of the first channel structure, a second channel structure extending through a remainder of the second gate electrode, the second channel structure connected to the first channel structure, and a buried conductive pattern on a sidewall of the second channel structure.

Abstract: A dial-type shifting control apparatus of vehicles may include a dial bezel and an upper cover integrated into a single body to be rotated together when a dial is rotated, obviating formation of an operation gap between the dial bezel and the upper cover to prevent foreign substances from entering through the operation gap, and a button guide disposed under an upper cover attenuates an impact occurring when a P-gear button is returned, and thus to prevent noise, caused by striking of the upper cover when the P-gear button is returned, from being transmitted to the interior of a vehicle.

Abstract: The present invention relates to a heat insulation composition, containing aerogel, with improved heat insulation and soundproofing properties, and a method for manufacturing a heat insulation fabric by using the same. The heat insulation composition is prepared by mixing solvent, aerogel powder, adhesive binder and carbon black powder, thereby improving the heat insulation property at an extremely low temperature and at a high temperature, and also enhancing the soundproofing property.

Abstract: A memory system may transfer a reference write size for a memory device to a host, and, when receiving, from the host, a write request for first data having a size corresponding to a multiple of the reference write size, may directly write the first data to the memory device without caching the first data in a write cache.

Abstract: Disclosed are a thermoplastic resin composition, a method of preparing the same, and a molded part manufactured using the same, wherein the thermoplastic resin composition includes a-1) 1 to 30% by weight of a first graft polymer obtained by graft-polymerizing an aromatic vinyl compound and a vinyl cyanide compound onto a conjugated diene rubber having an average particle diameter of 0.05 ?m or more and less than 0.2 ?m; a-2) 5 to 45% by weight of a second graft polymer obtained by graft-polymerizing an aromatic vinyl compound and a vinyl cyanide compound onto a conjugated diene rubber having an average particle diameter of 0.2 to 0.5 ?m; b) 50 to 80% by weight of an aromatic vinyl compound-vinyl cyanide compound copolymer; and c) 1 to 10% by weight of a (meth)acrylic acid alkyl ester polymer.

Abstract: A slave combining with a master in a robot tool changing system is disclosed. The slave includes a combination groove into which a protrusion of the master is inserted, at least one plate displacement measuring module arranged at a circumferential edge of a hole of the combination groove, and a slave communicator for communicating with the master. Accordingly, a robot tool changing system including an artificial intelligence (AI) function and performing 5G communications may be provided.

Abstract: A display device includes first to third light emitting units disposed on a substrate, an encapsulation layer disposed on the first to third light emitting units, a sensor electrode disposed on the encapsulation layer, an insulating layer disposed on the sensor electrode, first to third color filters disposed on the touch insulating layer and overlapping the first to third light emitting units in a thickness direction of the substrate, respectively. The sensor electrode overlaps at least one of the first color filter, the second color filter, and the third color filter in the thickness direction of the substrate.

Abstract: A vertical-type memory device includes a plurality of gate electrodes stacked on a substrate; and a vertical channel structure penetrating through the plurality of gate electrodes in a first direction, perpendicular to an upper surface of the substrate. The vertical channel structure includes a channel extending in the first direction, a first filling film that partially fills an internal space of the channel, a first liner on at least a portion of an upper surface of the first filling film and an upper internal side wall of the channel extending beyond the first filling film away from the substrate. The first liner includes n-type impurities. The vertical channel structure includes a second filling film on at least a portion of the first liner, and a pad on the second filling film and in contact with the first liner.

Abstract: A semiconductor device according to an embodiment may include a light emitting structure, a first electrode, a second electrode, a first insulating reflective layer, a second insulating reflective layer, a first bonding pad, and a second bonding pad. The light emitting structure may include a first conductivity type semiconductor layer and a second conductivity type semiconductor layer. The first insulating reflective layer may be disposed on the first electrode and the second electrode, and may include a first opening exposing an upper surface of the first electrode. The second insulating reflective layer may be disposed on the first electrode and the second electrode, and disposed spaced apart from the first insulating reflective layer, and may include a second opening exposing an upper surface of the second electrode. The first bonding pad may be electrically connected to the first electrode through the first opening.

Abstract: The present invention relates to an optically functional absorbing solution composition, infrared absorbing-enhanced glass using same, and an infrared transmitting filter comprising same, the optically functional absorbing solution composition comprising: a resin having a siloxane group substituted at an acrylic group; an organic solvent; and a dye comprising heat resistant dyes and/or non-heat-resistant dyes.

Abstract: Embodiments of the present disclosure relate to a memory system, a memory controller, and a method of operating the same, and more particularly, to a memory system, a memory controller, and a method of operating the same, which calculate a read-attribute value, a write-attribute value, and a time-attribute value for a nonvolatile memory set and determine an operation mode of the nonvolatile memory set on the basis of at least one of the read-attribute value, the write-attribute value, and the time-attribute value, thereby enabling a host to predict whether or not a memory controller executes a background operation.

Abstract: A process for producing olefins comprising the steps of separating the liquid oil in the fractionator to produce a light oil product; separating the light oil product in the extractor to produce a paraffin fraction stream; increasing a pressure of the paraffin fraction stream in a paraffin pump to produce a pressurized paraffin stream; mixing the pressurized paraffin stream with a pressurized water feed in the water mixer to produce a paraffin-containing water stream; heating the paraffin-containing water stream in the water heater to produce a hot paraffin-water stream, wherein a temperature of the hot paraffin-water stream is greater than 450 deg C, wherein the short chain paraffins are operable to crack at the temperature of the hot paraffin-water stream; mixing the hot paraffin-water stream and the hot feedstock in the feed mixer to produce a mixed feed stream; and introducing the mixed feed stream to the supercritical unit.

Abstract: A semiconductor device includes a plurality of first gate electrodes sequentially stacked on a substrate, a second gate electrode on the plurality of first gate electrodes, a first channel structure extending through the plurality of first gate electrodes and a portion of the second gate electrode, a buried insulation pattern on a sidewall of the first channel structure, of which an upper surface is at a higher level than a top end of the first channel structure, a second channel structure extending through a remainder of the second gate electrode, the second channel structure connected to the first channel structure, and a buried conductive pattern on a sidewall of the second channel structure.

Abstract: An electronic device executing an application through communication with a user input apparatus, the electronic device is provided. The electronic device includes: a communication unit that is configured to communicate with the user input apparatus; an information generation unit that generates information about an exclusive controller that controls the application and is executed in the user input apparatus; and a controller that controls the information generation unit to generate the information about the exclusive controller when the electronic device is paired with the user input apparatus, and controls the communication unit to transmit the generated information about the exclusive controller to the user input apparatus.

Abstract: A semiconductor integrated circuit device may include a pad, a first voltage protection circuit and a second voltage protection circuit. The first voltage protection circuit may be connected with the pad. The second voltage protecting circuit may be connected between the first voltage protection circuit and a ground terminal. The first voltage protection circuit may include a gate positive p-channel metal oxide semiconductor (GPPMOS) transistor. The second voltage protection circuit may include serially connected GPPMOS transistors.

Abstract: Provided are an integrated circuit device and a method of manufacturing the same. The integrated circuit device includes: a semiconductor substrate; a device isolation layer defining an active region of the semiconductor substrate; a gate insulating layer on the active region; a gate stack on the gate insulating layer; a spacer on a sidewall of the gate stack; and an impurity region provided on both sides of the gate stack, wherein the gate stack includes a metal carbide layer and a metal layer on the metal carbide layer, wherein the metal carbide layer includes a layer having a carbon content of about 0.01 at % to about 15 at %.