Abstract: An electronic device includes a first counting circuit configured to generate a first counting signal based on a comparison signal that is generated by comparing a first row address after the start of a first bootup operation and first fuse data that are generated by a first rupture operation, a second counting circuit configured to generate a second counting signal based on the comparison signal that is generated by comparing a second row address after the start of a second bootup operation and second fuse data that are generated by a second rupture operation, and a repair comparison circuit configured to generate a repair detection signal for detecting whether the first and second rupture operations are additionally performed by comparing the first counting signal with the second counting signal and configured to output the repair detection signal.

Abstract: An electronic device may include: a control pulse generation circuit configured to selectively generate one of a first control pulse and a second control pulse on the basis of a reference code during a test period; and a voltage control code generation circuit configured to perform an addition operation or subtraction operation on a logic bit set of a voltage control code to set the voltage level of an operation voltage on the basis of the first and second control pulses.

Abstract: A semiconductor apparatus includes a data alignment circuit and a data pattern control circuit. The data alignment circuit aligns data input through each of a plurality of data input/output pads to generate a plurality of alignment data. The data pattern control circuit generates a plurality of preliminary write data by copying some bits of a first alignment data among the plurality of alignment data to a plurality of input paths coupled to data input/output pads other than a first data input/output pad among the plurality of data input/output pads, and changes a pattern of the plurality of preliminary write data according to remaining bits of the first alignment data to generate a plurality of write data.

Abstract: An electronic device may include: a control pulse generation circuit configured to selectively generate one of a first control pulse and a second control pulse on the basis of a reference code during a test period; and a voltage control code generation circuit configured to perform an addition operation or subtraction operation on a logic bit set of a voltage control code to set the voltage level of an operation voltage on the basis of the first and second control pulses.

Abstract: A semiconductor device includes first and second memory devices configured to share a first transmission line from which a write clock is received and a second transmission line from which data is received. The memory devices receive the data through first to eighth internal clocks that are generated by dividing a frequency of the write clock, and selectively align and store at least some of the data that is received in synchronization with the first to eighth internal clocks based on timing at which the data is synchronized with the write clock.

Abstract: A semiconductor apparatus includes a command decoding circuit and an enable signal generation circuit. The command decoding circuit generates an operation code and a strobe pulse based on a command signal and a clock signal. The enable signal generation circuit generates a seed signal based on the operation code and the strobe pulse and generates an enable signal by shifting the seed signal. The enable signal generation circuit generates a plurality of guard keys based on a plurality of operation codes and the strobe pulse and prevents the generation of the enable signal for a predetermined time when the plurality of guard keys are not sequentially enabled.

Abstract: A semiconductor device includes a flag generation circuit configured to receive region fuse data and used fuse data which are generated from a fuse set selected based on a fuse set selection signal among from fuse sets and generate a bank resource flag to control a repair operation for a bank on which a repair operation has not been performed, based on the region fuse data and the used fuse data. The semiconductor device also includes a repair control circuit configured to control the repair operation for banks sharing the fuse sets based on the bank resource flag.

Abstract: An apparatus includes a selection data generation circuit configured to generate selection data from fuse data or generate the selection data having a preset test input pattern, depending on whether a failure test is entered; and a failure flag generation circuit configured to generate latch data by latching the selection data, and generate a failure flag by detecting whether the latch data has a preset test pattern.

Abstract: A memory device includes a data storage circuit configured to store, when a write operation is performed, a first internal write data and a second internal write data in a memory cell array which is accessed by an internal address, and output, when a read operation is performed, data stored in a memory cell array which is accessed by the internal address, as internal read data; and a flag generation circuit configured to generate a flag for controlling generation of a data strobe signal, based on the internal read data.

Abstract: An apparatus includes a boot-up control circuit configured to, when a first boot-up operation is performed, latch first fuse data by receiving the first fuse data and fuse information from a fuse circuit and configured to, when a second boot-up operation is performed, latch second fuse data by receiving the second fuse data from the fuse circuit based on the fuse information; and a rupture control circuit configured to store a failure address as the second fuse data by rupturing the fuse circuit based on the fuse information.

Abstract: An electronic device may include: a control pulse generation circuit configured to selectively generate one of a first control pulse and a second control pulse on the basis of a reference code during a test period; and a voltage control code generation circuit configured to perform an addition operation or subtraction operation on a logic bit set of a voltage control code to set the voltage level of an operation voltage on the basis of the first and second control pulses.

Abstract: A semiconductor device includes a flag generation circuit configured to receive region fuse data and used fuse data which are generated from a fuse set selected based on a fuse set selection signal among from fuse sets and generate a bank resource flag to control a repair operation for a bank on which a repair operation has not been performed, based on the region fuse data and the used fuse data. The semiconductor device also includes a repair control circuit configured to control the repair operation for banks sharing the fuse sets based on the bank resource flag.

Abstract: An apparatus includes a boot-up control circuit configured to, when a first boot-up operation is performed, latch first fuse data by receiving the first fuse data and fuse information from a fuse circuit and configured to, when a second boot-up operation is performed, latch second fuse data by receiving the second fuse data from the fuse circuit based on the fuse information; and a rupture control circuit configured to store a failure address as the second fuse data by rupturing the fuse circuit based on the fuse information.

Abstract: A semiconductor apparatus includes a command decoding circuit and an enable signal generation circuit. The command decoding circuit generates an operation code and a strobe pulse based on a command signal and a clock signal. The enable signal generation circuit generates a seed signal based on the operation code and the strobe pulse and generates an enable signal by shifting the seed signal. The enable signal generation circuit generates a plurality of guard keys based on a plurality of operation codes and the strobe pulse and prevents the generation of the enable signal for a predetermined time when the plurality of guard keys are not sequentially enabled.

Abstract: A memory device includes a data storage circuit configured to store, when a write operation is performed, a first internal write data and a second internal write data in a memory cell array which is accessed by an internal address, and output, when a read operation is performed, data stored in a memory cell array which is accessed by the internal address, as internal read data; and a flag generation circuit configured to generate a flag for controlling generation of a data strobe signal, based on the internal read data.

Abstract: An apparatus includes a selection data generation circuit configured to generate selection data from fuse data or generate the selection data having a preset test input pattern, depending on whether a failure test is entered; and a failure flag generation circuit configured to generate latch data by latching the selection data, and generate a failure flag by detecting whether the latch data has a preset test pattern.

Abstract: A semiconductor apparatus includes a command decoding circuit and an enable signal generation circuit. The command decoding circuit generates an operation code and a strobe pulse based on a command signal and a clock signal. The enable signal generation circuit generates a seed signal based on the operation code and the strobe pulse and generates an enable signal by shifting the seed signal. The enable signal generation circuit generates a plurality of guard keys based on a plurality of operation codes and the strobe pulse and prevents the generation of the enable signal for a predetermined time when the plurality of guard keys are not sequentially enabled.

Abstract: A semiconductor apparatus includes a command decoding circuit and an enable signal generation circuit. The command decoding circuit generates an operation code and a strobe pulse based on a command signal and a clock signal. The enable signal generation circuit generates a seed signal based on the operation code and the strobe pulse and generates an enable signal by shifting the seed signal. The enable signal generation circuit generates a plurality of guard keys based on a plurality of operation codes and the strobe pulse and prevents the generation of the enable signal for a predetermined time when the plurality of guard keys are not sequentially enabled.

Abstract: A semiconductor apparatus includes a fuse array, storage circuit, parity circuit, fuse data register, parity data register, and error correction circuit. The fuse array stores information about fail addresses and outputs the stored information as fuse data during a boot-up operation. Wherein, the storage circuit stores the fuse data and outputs it as a storage signal and the parity circuit performs a parity operation based on the storage signal and outputs a result of the parity operation as a parity signal, the fuse data register receives and stores the fuse data and outputs the stored data as a fuse register output signal. The parity data register receives and stores the parity signal and outputs the stored information as a parity register output signal, the error correction circuit corrects an error of the fuse register output signal based on the parity register output signal and outputs the error-corrected signal as repair information.

Abstract: A semiconductor apparatus includes a command decoding circuit and an enable signal generation circuit. The command decoding circuit generates a plurality of operation codes and a strobe pulse based on a command signal and a clock signal. The enable signal generation circuit generates a seed signal based on at least a part of an operation code, among the plurality of operation codes, and the strobe pulse, and generates an enable signal by shifting the seed signal. The enable signal generation circuit generates a plurality of guard keys, after the seed signal is generated, based on the plurality of operation codes and the strobe pulse, and prevents the generation of the enable signal when any one of the plurality of guard keys is disabled.