Abstract: A semiconductor device includes an internal command generation circuit suitable for generating a first internal command, a second internal command, and a third internal command based on a command/address signal. The semiconductor device also includes a driving signal generation circuit suitable for enabling a fuse driving signal for reading fuse data from a nonvolatile memory circuit, where the fuse signal is enabled while the second internal command is inputted a predetermined number of times. Further included is an output circuit suitable for outputting the fuse data in response to the third internal command.

Abstract: An electrical fuse (E-fuse) circuit is disclosed, which relates to a technology for processing a failed part of the E-fuse circuit. The E-fuse circuit may be configured to detect failed data and or store a failed address.

Abstract: A semiconductor device includes an internal command generation circuit suitable for generating a first internal command, a second internal command, and a third internal command based on a command/address signal. The semiconductor device also includes a driving signal generation circuit suitable for enabling a fuse driving signal for reading fuse data from a nonvolatile memory circuit, where the fuse signal is enabled while the second internal command is inputted a predetermined number of times. Further included is an output circuit suitable for outputting the fuse data in response to the third internal command.

Abstract: A training device may include a pattern generation circuit configured to generate a pattern signal in response to a read command, a delay calculation circuit configured to calculate a delay amount based on comparison results between a generation timing of the pattern signal and generation timings of pattern signals which are generated from one or more other training devices and transmitted to a corresponding training device, and a delay adjusting circuit configured to adjust a delay of a DQ signal in a chip including the corresponding training device, based on the delay amount.

Abstract: A semiconductor device includes: first to Nth non-volatile memory areas, each including a plurality of cells positioned at cross points between row lines and column lines; a storage circuit including a plurality of unit latches suitable for storing data transferred from the first to Nth non-volatile memory areas; and an operation control circuit suitable for controlling setup information of first to Nth operation modes to be programmed in the first to Nth non-volatile memory areas, respectively, during a rupture mode, and controlling a data transferred from the first non-volatile memory area to be written in the unit latches and controlling a data transferred from one of the second to Nth non-volatile memory areas to be over-written in the unit latches in response to an operation mode change request, during a boot-up mode.