Abstract: Semiconductor devices are provided. A semiconductor device includes a fin structure including a stress structure and a semiconductor region that are sequentially stacked on a substrate. The semiconductor device includes a field insulation layer on a portion of the fin structure. The semiconductor device includes a gate electrode on the fin structure. Moreover, the stress structure includes an oxide.

Abstract: Provided is a display apparatus including a substrate and a semiconductor layer including first and second semiconductor layers. A first gate insulating layer is formed on the semiconductor layer. A first gate wiring overlapping the first semiconductor layer is formed on the first gate insulating layer. A second gate insulating layer is formed on the first gate wiring. A second gate wiring overlapping the second semiconductor layer is formed on the second gate insulating layer. A third gate insulating layer covers the second gate wiring. A driving voltage line intersecting the first and second gate wirings is formed on the third gate insulating layer. A data line intersecting the first and second gate wirings is formed on the third gate insulating layer. A short circuit protection area is formed between the first gate wiring, the second gate wiring, the driving voltage line and the data line.

Abstract: The present disclosure relates to a microorganism producing L-tryptophan in which the microorganism is modified such that a protein having an L-tryptophan-exporting activity comprising the amino acid sequence of SEQ ID NO: 1 is expressed, and a method for producing L-tryptophan using the microorganism.

Abstract: A semiconductor device includes a substrate having a first region and a second region, first active fins that extend in a first direction in the first region, second active fins that extend in the first direction in the second region, a first field insulating layer between the first active fins and that extend in a second direction, a second field insulating layer between the second active fins and extending in the second direction, a gate line that extends in the second direction on the second field insulating layer, the gate line linearly along with the first field insulating layer, a gate isolation layer between the first field insulating layer and the gate line, and gate spacers that extend in the second direction, the gate spacers in contact with both sidewalls of each of the first field insulating layer, the gate line, and the gate isolation layer.

Abstract: A semiconductor device includes a substrate having a first region and a second region, a first transistor including a single first active fin disposed in the first region, a first gate electrode intersecting the single first active fin, and a single first source/drain layer disposed in the first recess of the single first active fin, and a second transistor including a plurality of second active fins disposed in the second region, a second gate electrode intersecting the plurality of second active fins, and a plurality of second source/drain layers disposed in the second recesses of the plurality of second active fins. The single first active fin and the plurality of second active fins may have a first conductivity type, and a depth of the first recess may be less than a depth of each of the second recesses.

Abstract: A semiconductor memory device includes a memory cell array including memory cells, a row decoder connected to the memory cell array through first conductive lines, write drivers and sense amplifiers connected to the memory cell array through second conductive lines, a voltage generator that supplies a first voltage to the row decoder and supplies a second voltage to the write drivers and sense amplifiers, and a data buffer that is connected to the write drivers and sense amplifiers and transfers data between the write drivers and sense amplifiers and an external device. At least one of the row decoder, the write drivers and sense amplifiers, the voltage generator, and the data buffer includes a first ferroelectric capacitor to amplify a voltage.

Abstract: A liquid crystal display includes a first substrate including: a display area including a plurality of pixels on the first substrate, a non-display area which is disposed on an outside of the display area and in which a dummy wire is disposed on the first substrate, and an image input hole which is defined therein in the non-display area and in which an image input device is disposed, a second substrate facing the first substrate and including a display area and a non-display area corresponding to those of the first substrate, a liquid crystal layer interposed between the first and second substrates, and a sealant which is in the non-display area of the first and second substrates and seals the liquid crystal layer between the first and second substrates. The dummy wire is disposed near the image input hole.

Abstract: A display device including: a display panel including a first area, a second area spaced apart from the first area, and a bent third area between the first and second areas; a first support film coupled to a bottom surface of the display panel and overlapping the first area; and a second support film coupled to the bottom surface of the display panel, overlapping the second area, and spaced apart from the first support film by a gap, the gap overlapping the third area, a top surface of the first support film facing the display panel and an inner side of the first support film form a first angle, a top surface of the second support film facing the display panel and an inner side of the second support film form a second angle, which is greater than the first angle, and the first support film includes a protruding pattern.

Abstract: A semiconductor device includes a plurality of active fins on a substrate, a gate electrode intersecting the plurality of active fins, and a source/drain region on the plurality of active fins, extending on a first side and a second side of the gate electrode. The source/drain region includes lower epitaxial layers on ones of the plurality of active fins. The lower epitaxial layers include germanium (Ge) having a first concentration. An upper epitaxial layer is on the lower epitaxial layers, and includes germanium (Ge) having a second concentration that is higher than the first concentration. The lower epitaxial layers have convex upper surfaces, and are connected to each other between the active fins.

Abstract: The exemplary embodiments relate generally to a display device that may include: a first substrate and a second substrate, each including a transparent encapsulation area; an outer sealant along a side of the transparent encapsulation area; a pattern part disposed on the first substrate and extending in a direction parallel to the outer sealant; and a transparent sealant adjacent to the pattern part and extending in a direction parallel to the pattern part, and a manufacturing method thereof.

Abstract: A semiconductor device includes a first impurity region, a channel pattern, a second impurity region, a gate structure, a first contact pattern, a second contact pattern and a spacer. The first impurity region may be formed on a substrate. The channel pattern may protrude from an upper surface of the substrate. The second impurity region may be formed on the channel pattern. The gate structure may be formed on a sidewall of the channel pattern and the substrate adjacent to the channel pattern, and the gate structure may include a gate insulation pattern and a gate electrode. The first contact pattern may contact an upper surface of the second impurity region. The second contact pattern may contact a surface of the gate electrode. The spacer may be formed between the first and second contact patterns. The spacer may surround a portion of a sidewall of the second contact pattern, and the spacer may contact a sidewall of each of the first and second contact patterns.

Abstract: A display device includes a display panel, a support film, and a polymer layer. The display panel includes a display area comprising a first area that is bendable, and a non-display area adjacent to the display area. The support film is coupled to a bottom surface of the display panel. The support film includes a first groove overlapping with the first area. The polymer layer is disposed in the first groove. The polymer layer includes a material with higher flexibility than the support film. Angles formed by a top surface of the support film and inner sides of the support film defining the first groove are acute angles.

Abstract: A display device is provided. The display device includes a first base substrate, a gate line on the first base substrate and extending in a first direction, a data line disposed on the first base substrate, insulated from the gate line, and extending in a second direction, which crosses the first direction, a switch on the first base substrate and electrically connected to the gate line and the data line, an insulating layer on the switch, a first electrode on the insulating layer, a light-shielding conductive layer directly contacting the first electrode and overlapping the switch, and a second electrode insulated from the first electrode and the light-shielding conductive layer, at least partially overlapping the first electrode, and electrically connected to the switch.

Abstract: The present invention relates to a novel variant RNA polymerase sigma factor 70 (?70) polypeptide, a polynucleotide encoding the same, a microorganism containing the polypeptide, and a method for producing L-threonine by using the microorganism.

Abstract: A liquid crystal display includes a first substrate including: a display area including a plurality of pixels on the first substrate, a non-display area which is disposed on an outside of the display area and in which a dummy wire is disposed on the first substrate, and an image input hole which is defined therein in the non-display area and in which an image input device is disposed, a second substrate facing the first substrate and including a display area and a non-display area corresponding to those of the first substrate, a liquid crystal layer interposed between the first and second substrates, and a sealant which is in the non-display area of the first and second substrates and seals the liquid crystal layer between the first and second substrates. The dummy wire is disposed near the image input hole.

Abstract: An inverter system includes a rectifier configured to convert a 3-phase AC voltage into a DC voltage, a DC link capacitor configured to smooth the DC voltage into a DC link voltage, an inverter unit configured to convert the DC link voltage into an AC voltage and to output the AC voltage to a motor, and a controller configured to control operation of the inverter unit. The controller performs control to switch the inverter unit to a zero vector when overload is applied during operation of the inverter unit.

Abstract: The exemplary embodiments relate generally to a display device that may include: a first substrate and a second substrate, each including a transparent encapsulation area; an outer sealant along a side of the transparent encapsulation area; a pattern part disposed on the first substrate and extending in a direction parallel to the outer sealant; and a transparent sealant adjacent to the pattern part and extending in a direction parallel to the pattern part, and a manufacturing method thereof.

Abstract: Provided are a functional food or pharmaceutical composition or a method for preventing, alleviating or treating hyperphosphatemia and chronic kidney disease and treating chronic kidney disease using the composition comprising Lactobacillus sp. KCCM 11826P having excellent phosphorus-absorbing ability.

Abstract: Provided is a novel compound for EBL capable of improving the light emitting efficiency, stability and life span of a device, and an organic electric element and an electronic device using the same.