Patents by Inventor Hyo-Jin Kim

Hyo-Jin Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10828253
    Abstract: The present disclosure relates to a composition for injection, which comprises a pharmaceutically acceptable salt of a compound represented by Formula 1 and one or more selected from mannitol, trehalose, lactose and glucose as a stabilizing agent, having improved stability.
    Type: Grant
    Filed: July 6, 2018
    Date of Patent: November 10, 2020
    Assignee: HK INNO.N CORPORATION
    Inventors: Hyo Jin Kim, Sung Jun Kim, Min Kyoung Lee, Sung Ah Lee, Mi Young Yoon
  • Patent number: 10825809
    Abstract: A semiconductor device includes a substrate having a first region and a second region, first active fins that extend in a first direction in the first region, second active fins that extend in the first direction in the second region, a first field insulating layer between the first active fins and that extend in a second direction, a second field insulating layer between the second active fins and extending in the second direction, a gate line that extends in the second direction on the second field insulating layer, the gate line linearly along with the first field insulating layer, a gate isolation layer between the first field insulating layer and the gate line, and gate spacers that extend in the second direction, the gate spacers in contact with both sidewalls of each of the first field insulating layer, the gate line, and the gate isolation layer.
    Type: Grant
    Filed: March 1, 2019
    Date of Patent: November 3, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seung Seok Ha, Hyun Seung Song, Hyo Jin Kim, Kyoung Mi Park, Guk Il An
  • Publication number: 20200340023
    Abstract: The present invention relates to a novel variant RNA polymerase sigma factor 70 (?70) polypeptide, a polynucleotide encoding the same, a microorganism containing the polypeptide, and a method for producing L-threonine by using the microorganism.
    Type: Application
    Filed: July 15, 2020
    Publication date: October 29, 2020
    Inventors: Ji Sun LEE, Kwang Ho LEE, Hyo Jin KIM, Keun Chul LEE, Young Bin HWANG
  • Patent number: 10815293
    Abstract: A method for purifying fibrinogen includes steps of: (a) precipitating fibrinogen of a fibrinogen-containing solution by adding glycine to the solution for a concentration of glycine to be 1.5 to 2.5M, and then removing a supernatant and recovering a precipitate (1st glycine precipitation); (b) dissolving the precipitate of 1st glycine precipitation of step (a) in a dissolution buffer to obtain a solution, precipitating the solution by adding glycine thereto for a concentration of glycine to be 0.2 to 1.2M, and recovering a supernatant (2nd glycine precipitation); (c) precipitating the supernatant of step (b) by adding glycine thereto for a concentration of glycine to be 1.5 to 2.5M, and recovering a precipitate (3rd glycine precipitation); and (d) dissolving the precipitate of step (c) in a dissolution buffer to obtain a solution, and subjecting the solution to nanofiltration using a nanofilter.
    Type: Grant
    Filed: January 12, 2017
    Date of Patent: October 27, 2020
    Assignee: GREEN CROSS HOLDINGS CORPORATION
    Inventors: Jun Sic Kim, Hyo Jin Kim, Ji Yoon Park, Ju Ho Lee, Jae Woon Son, Yong Won Shin
  • Publication number: 20200287169
    Abstract: A manufacturing method of a display device, includes: providing a display module bendable at a bending area and including: a passivation film including a polyimide and disposed both in and outside of the bending area, and an adhesive layer attaching a display panel to the passivation film and including a first adhesive portion in the bending area and a second adhesive portion outside of the bending area; reducing an adhesive force of the first adhesive portion, by irradiating a first laser which is a CO2 laser to the adhesive layer at the bending area, to provide the first adhesive portion which has reduced adhesive force; providing a groove in the passivation film and the adhesive layer, along a boundary of the bending area; and removing the passivation film and the first adhesive portion which has the reduced adhesive force, from the display panel, at the groove.
    Type: Application
    Filed: November 5, 2019
    Publication date: September 10, 2020
    Inventors: Tae Hyun SUNG, Woo Hyun KIM, Hyo Jin KIM
  • Patent number: 10760108
    Abstract: The present invention relates to a novel variant RNA polymerase sigma factor 70 (?70) polypeptide, a polynucleotide encoding the same, a microorganism containing the polypeptide, and a method for producing L-threonine by using the microorganism.
    Type: Grant
    Filed: September 4, 2015
    Date of Patent: September 1, 2020
    Assignee: CJ CHEILJEDANG CORPORATION
    Inventors: Ji Sun Lee, Kwang Ho Lee, Hyo Jin Kim, Keun Chul Lee, Young Bin Hwang
  • Patent number: 10727525
    Abstract: A lithium ion battery including a core-shell structured fire extinguishing particle is disclosed. When the battery is overheated to a predetermined temperature, a shell of the fire extinguishing particle coated on one surface or both surfaces of a porous separator is melted, a fire extinguishing material disposed in an inner space of the shell is released into an electrolytic solution of the battery, and as a result, it is possible to prevent the battery from being ignited or exploded even though the battery is overheated. Further, the melted shell clogs pores of the porous separator to block lithium ions from moving, such that the battery is blocked from being driven, thereby preventing the battery from being overheated any more.
    Type: Grant
    Filed: December 18, 2017
    Date of Patent: July 28, 2020
    Assignees: HYUNDAI MOTOR COMPANY, KIA MOTORS CORPORATION, THE INDUSTRY & ACADEMIC COOPERATION IN CHUNGNAM NATIONAL UNIVERSITY
    Inventors: Ki Seok Koh, Yeol Mae Yeo, Jung Je Woo, Seung Min Oh, Yoon Sung Lee, Kyung Jin Lee, Hyo Jin Kim
  • Patent number: 10700203
    Abstract: A semiconductor device includes a plurality of active fins on a substrate, a gate electrode intersecting the plurality of active fins, and a source/drain region on the plurality of active fins, extending on a first side and a second side of the gate electrode. The source/drain region includes lower epitaxial layers on ones of the plurality of active fins. The lower epitaxial layers include germanium (Ge) having a first concentration. An upper epitaxial layer is on the lower epitaxial layers, and includes germanium (Ge) having a second concentration that is higher than the first concentration. The lower epitaxial layers have convex upper surfaces, and are connected to each other between the active fins.
    Type: Grant
    Filed: December 7, 2018
    Date of Patent: June 30, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong Woo Kim, Do Hee Kim, Hyo Jin Kim, Kang Hun Moon, Si Hyung Lee
  • Publication number: 20200203395
    Abstract: Provided is a display apparatus including a substrate and a semiconductor layer including first and second semiconductor layers. A first gate insulating layer is formed on the semiconductor layer. A first gate wiring overlapping the first semiconductor layer is formed on the first gate insulating layer. A second gate insulating layer is formed on the first gate wiring. A second gate wiring overlapping the second semiconductor layer is formed on the second gate insulating layer. A third gate insulating layer covers the second gate wiring. A driving voltage line intersecting the first and second gate wirings is formed on the third gate insulating layer. A data line intersecting the first and second gate wirings is formed on the third gate insulating layer. A short circuit protection area is formed between the first gate wiring, the second gate wiring, the driving voltage line and the data line.
    Type: Application
    Filed: March 3, 2020
    Publication date: June 25, 2020
    Inventors: HYO JIN KIM, WON KYU LEE, SEUNG GYU TAE
  • Patent number: 10662450
    Abstract: An aspartokinase variant, a microorganism comprising the variant, and a method for producing an aspartate-derived L-amino acid or a homoserine derivative thereof using the microorganism.
    Type: Grant
    Filed: June 29, 2018
    Date of Patent: May 26, 2020
    Assignee: CJ Cheiljedang Corporation
    Inventors: Hyung Joon Kim, Hyo Jin Kim, Hyun Won Bae, Hyun Ah Kim, Chang Il Seo, Ji Sun Lee, Jin Sook Chang
  • Publication number: 20200146974
    Abstract: The present disclosure relates to a composition for injection, which comprises a pharmaceutically acceptable salt of a compound represented by Formula 1 and one or more selected from mannitol, trehalose, lactose and glucose as a stabilizing agent, having improved stability.
    Type: Application
    Filed: July 6, 2018
    Publication date: May 14, 2020
    Applicant: CJ HEALTHCARE CORPORATION
    Inventors: Hyo Jin KIM, Sung Jun KIM, Min Kyoung LEE, Sung Ah LEE, Mi Young YOON
  • Publication number: 20200147157
    Abstract: Disclosed is a composition comprising a Sargassum horneri extract for alleviating lung injury or respiratory disease.
    Type: Application
    Filed: September 4, 2019
    Publication date: May 14, 2020
    Inventors: Young-Heun JEE, You-Jin JEON, Hyun-Jung KIM, Ji-Yeon CHUN, Areum KIM, Hyo-Jin KIM
  • Publication number: 20200131545
    Abstract: An aspartokinase variant, a microorganism comprising the variant, and a method for producing an aspartate-derived L-amino acid or a homoserine derivative thereof using the microorganism.
    Type: Application
    Filed: June 29, 2018
    Publication date: April 30, 2020
    Inventors: Hyung Joon KIM, Hyo Jin KIM, Hyun Won BAE, Hyun Ah KIM, Chang Il SEO, Ji Sun LEE, Jin Sook CHANG
  • Publication number: 20200124298
    Abstract: Disclosed is an air conditioner including a first frame including a through hole, a second frame rotatably coupleable to the first frame, the second frame including a burring portion at least a portion of which is insertable into the through-hole in a first direction, where while the burring portion is inserted into the through-hole of the first frame, the burring portion protrudes in the first direction, and a burring hole formed by the burring portion, and a fastening member insertable into the burring hole in a second direction opposite to the first direction and configured to function as a rotary shaft of the second frame, where while the fastening member is inserted into the burring hole, the fastening member protrudes in the second direction.
    Type: Application
    Filed: October 18, 2019
    Publication date: April 23, 2020
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: In Chul LEE, Jeong Uk KOH, Yong Sam KWON, HYO JIN KIM, SEONG JIN CHO
  • Patent number: 10615162
    Abstract: The semiconductor device includes a first fin-type pattern and a second fin-type pattern which extends along a first direction; a first gate structure and a second gate structure extending in a second direction, on the first fin-type pattern and the second fin-type pattern; and a shared epitaxial pattern which connects the first fin-type pattern and the second fin-type pattern between the first gate structure and the second gate structure. An upper surface of the shared epitaxial pattern includes a first shared slope and a second shared slope which connect the first gate structure and the second gate structure, a third shared slope which is in contact with the first gate structure and connects the first shared slope and the second shared slope, and a fourth shared slope which is in contact with the second gate structure and connects the first shared slope and the second shared slope.
    Type: Grant
    Filed: November 2, 2017
    Date of Patent: April 7, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyun Kwan Yu, Won Hyung Kang, Hyo Jin Kim, Sung Bu Min
  • Publication number: 20200083377
    Abstract: Semiconductor devices are provided. A semiconductor device includes a fin structure including a stress structure and a semiconductor region that are sequentially stacked on a substrate. The semiconductor device includes a field insulation layer on a portion of the fin structure. The semiconductor device includes a gate electrode on the fin structure. Moreover, the stress structure includes an oxide.
    Type: Application
    Filed: May 3, 2019
    Publication date: March 12, 2020
    Inventors: Sung Min Kim, Hyo Jin Kim, Dae Won Ha
  • Patent number: 10580805
    Abstract: Provided is a display apparatus including a substrate and a semiconductor layer including first and second semiconductor layers. A first gate insulating layer is formed on the semiconductor layer. A first gate wiring overlapping the first semiconductor layer is formed on the first gate insulating layer. A second gate insulating layer is formed on the first gate wiring. A second gate wiring overlapping the second semiconductor layer is formed on the second gate insulating layer. A third gate insulating layer covers the second gate wiring. A driving voltage line intersecting the first and second gate wirings is formed on the third gate insulating layer. A data line intersecting the first and second gate wirings is formed on the third gate insulating layer. A short circuit protection area is formed between the first gate wiring, the second gate wiring, the driving voltage line and the data line.
    Type: Grant
    Filed: October 11, 2018
    Date of Patent: March 3, 2020
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Hyo Jin Kim, Won Kyu Lee, Seung Gyu Tae
  • Publication number: 20200063219
    Abstract: The present disclosure relates to a microorganism producing L-tryptophan in which the microorganism is modified such that a protein having an L-tryptophan-exporting activity comprising the amino acid sequence of SEQ ID NO: 1 is expressed, and a method for producing L-tryptophan using the microorganism.
    Type: Application
    Filed: February 22, 2019
    Publication date: February 27, 2020
    Inventors: Moo Young JUNG, Chang Il SEO, Hyo Jin KIM, Tae Yeon KIM, Hyun Ah KIM, Sung Kwang SON, Hye Ryun YOO, Jae Min LEE, Ki Yong CHEONG
  • Publication number: 20200051976
    Abstract: A semiconductor device includes a substrate having a first region and a second region, first active fins that extend in a first direction in the first region, second active fins that extend in the first direction in the second region, a first field insulating layer between the first active fins and that extend in a second direction, a second field insulating layer between the second active fins and extending in the second direction, a gate line that extends in the second direction on the second field insulating layer, the gate line linearly along with the first field insulating layer, a gate isolation layer between the first field insulating layer and the gate line, and gate spacers that extend in the second direction, the gate spacers in contact with both sidewalls of each of the first field insulating layer, the gate line, and the gate isolation layer.
    Type: Application
    Filed: March 1, 2019
    Publication date: February 13, 2020
    Inventors: Seung Seok HA, Hyun Seung SONG, Hyo Jin KIM, Kyoung Mi PARK, Guk Il AN
  • Patent number: D900054
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: October 27, 2020
    Assignee: Harman International Industries, Incorporated
    Inventor: Hyo Jin Kim