Abstract: An apparatuses for managing access to a file stored in a remote location includes detecting an attempt for a user terminal to access the file stored in the remote location, determining a location where the file attempted to be access is to be opened, in response to a determination that the location where the file is to be opened is remote, opening the file and providing a content of the opened file to the user terminal by a file management server and in response to a determination that the location where the file is to be opened is local, processing the file to be downloaded to the user terminal by the file management server.

Abstract: Disclosed are three-dimensional semiconductor device and their fabrication methods. The device includes a first active region on a substrate and including a first source/drain pattern and a first channel pattern connected to the first source/drain pattern, a first active contact on the first source/drain pattern, a second active region on the first active region and the first active contact and including a second source/drain pattern and a second channel pattern connected to the second source/drain pattern, a second active contact on the second source/drain pattern, a gate electrode that vertically extends from the first channel pattern toward the second channel pattern, a first power line and a second power line that are below the first active region, and a first metal layer on the gate electrode and the second active contact.

Abstract: The present application relates to microorganisms with enhanced L-branched-chain amino acid productivity comprising a novel polynucleotide and a method for producing L-branched-chain amino acids using the same.

Abstract: A semiconductor device includes a first device including first active regions and first to third structures thereon, and a second device including a second active region, a gate structure intersecting the second active region, and a source/drain region including a lower source/drain region on the second active region having first-type conductivity, an inter-source/drain region insulating layer on the lower source/drain region, and an upper source/drain region on the inter-source/drain region insulating layer and having second-type conductivity. The first structure includes first lower and upper impurity regions. The second structure includes a second lower impurity region having the first-type conductivity, an inter-impurity region insulating layer, and a second upper impurity region having the second-type conductivity.

Abstract: A display device including: a display panel including a first area, a second area spaced apart from the first area, and a bent third area between the first and second areas; a first support film coupled to a bottom surface of the display panel and overlapping the first area; and a second support film coupled to the bottom surface of the display panel, overlapping the second area, and spaced apart from the first support film by a gap, the gap overlapping the third area, a top surface of the first support film facing the display panel and an inner side of the first support film form a first angle, a top surface of the second support film facing the display panel and an inner side of the second support film form a second angle, which is greater than the first angle, and the first support film includes a protruding pattern.

Abstract: A semiconductor device includes a substrate having a first region and a second region, first active fins that extend in a first direction in the first region, second active fins that extend in the first direction in the second region, a first field insulating layer between the first active fins and that extend in a second direction, a second field insulating layer between the second active fins and extending in the second direction, a gate line that extends in the second direction on the second field insulating layer, the gate line linearly along with the first field insulating layer, a gate isolation layer between the first field insulating layer and the gate line, and gate spacers that extend in the second direction, the gate spacers in contact with both sidewalls of each of the first field insulating layer, the gate line, and the gate isolation layer.

Abstract: The present disclosure relates to an L-threonine export protein variant, a microorganism including same, and a method for production of L-threonine using same.

Abstract: The present disclosure relates to modified homoserine dehydrogenase and a method for producing a homoserine-derived L-amino acid using the same.

Abstract: Provided are a novel yeast strain producing glutathione and a method of producing glutathione using the same.

Abstract: An apparatuses for managing access to a file stored in a remote location includes detecting an attempt for a user terminal to access the file stored in the remote location, determining a location where the file attempted to be access is to be opened, in response to a determination that the location where the file is to be opened is remote, opening the file and providing a content of the opened file to the user terminal by a file management server and in response to a determination that the location where the file is to be opened is local, processing the file to be downloaded to the user terminal by the file management server.

Abstract: A semiconductor device includes a substrate having a first region and a second region, first active fins that extend in a first direction in the first region, second active fins that extend in the first direction in the second region, a first field insulating layer between the first active fins and that extend in a second direction, a second field insulating layer between the second active fins and extending in the second direction, a gate line that extends in the second direction on the second field insulating layer, the gate line linearly along with the first field insulating layer, a gate isolation layer between the first field insulating layer and the gate line, and gate spacers that extend in the second direction, the gate spacers in contact with both sidewalls of each of the first field insulating layer, the gate line, and the gate isolation layer.

Abstract: A semiconductor device includes a first impurity region on a substrate; a channel pattern protruding from an upper surface of the substrate, the channel pattern extending in a first direction substantially parallel to the upper surface of the substrate; a second impurity region on the channel pattern, the second impurity region covering an entire upper surface of the channel pattern; a gate structure on a sidewall of the channel pattern and the substrate adjacent to the channel pattern; a first contact pattern on the second impurity region; a second contact pattern that is electrically connected to the gate structure; and a spacer between the first contact pattern and the second contact pattern. The spacer completely surrounds the second contact pattern in plan view, and the first contact pattern partially surrounds the second contact pattern in plan view.

Abstract: Disclosed are a dual modulator of mGluR5 and 5-HT2AR (5-HT2A receptor), and use thereof. More specifically, disclosed are a compound which acts as modulator of mGluR5 and an antagonist of 5-HT2AR at the same time, and use thereof as therapeutic agent for pain.

Abstract: Provided is a semiconductor device. The semiconductor device comprises a first active pattern extending in a first direction on a substrate, a second active pattern which extends in the first direction and is adjacent to the first active pattern in a second direction different from the first direction, a field insulating film placed between the first active pattern and the second active pattern, a first gate structure which crosses the first active pattern, extends in the second direction, and includes a first gate electrode and a first gate spacer, a second gate structure which crosses the second active pattern, extends in the second direction, and includes a second gate electrode and a second gate spacer, a gate separation structure placed on the field insulating film between the first gate structure and the second gate structure.

Abstract: A semiconductor device includes first and second fin-shaped patterns disposed on a substrate and extending in a first direction, first and second channel layers disposed on the first and second fin-shaped patterns, first and second etch stop layers disposed inside the first and second channel layers, first and second gate structures extending in a second direction different from the first direction on the first channel layer with a first recess formed therebetween, third and fourth gate structures extending in the second direction on the second channel layer with a second recess formed therebetween, the first recess having a first width in the first direction and having a first depth in a third direction perpendicular to the first and second directions, the second recess having a second width different from the first width in the first direction, and having a second depth equal to the first depth in the third direction.

Abstract: A semiconductor device includes a first impurity region, a channel pattern, a second impurity region, a gate structure, a first contact pattern, a second contact pattern and a spacer. The first impurity region may be formed on a substrate. The channel pattern may protrude from an upper surface of the substrate. The second impurity region may be formed on the channel pattern. The gate structure may be formed on a sidewall of the channel pattern and the substrate adjacent to the channel pattern, and the gate structure may include a gate insulation pattern and a gate electrode. The first contact pattern may contact an upper surface of the second impurity region. The second contact pattern may contact a surface of the gate electrode. The spacer may be formed between the first and second contact patterns. The spacer may surround a portion of a sidewall of the second contact pattern, and the spacer may contact a sidewall of each of the first and second contact patterns.

Abstract: A method for controlling a live content broadcast includes receiving, on a first online platform, information on a first set of products registered as products for sale of a user account associated with the user terminal, and receiving from a user, as a first user input, a selection of a second set of products to sell in the live content broadcast on a second online platform among the first set of products.

Abstract: According to an embodiment, a transparent solar cell, a photovoltaic system including the transparent solar cell, and a method for manufacturing the transparent solar cell are provided. The transparent solar cell comprises a substrate, an adhesive layer formed on the substrate, a metal layer formed on the adhesive layer, a solar cell layer formed on the metal layer, and a coating layer formed on the solar cell layer. The solar cell layer and the metal layer include a plurality of holes having a predetermined diameter.

Abstract: A semiconductor device includes first and second fin-shaped patterns disposed on a substrate and extending in a first direction, first and second channel layers disposed on the first and second fin-shaped patterns, first and second etch stop layers disposed inside the first and second channel layers, first and second gate structures extending in a second direction different from the first direction on the first channel layer with a first recess formed therebetween, third and fourth gate structures extending in the second direction on the second channel layer with a second recess formed therebetween, the first recess having a first width in the first direction and having a first depth in a third direction perpendicular to the first and second directions, the second recess having a second width different from the first width in the first direction, and having a second depth equal to the first depth in the third direction.