Abstract: Provided is a light emitting device fabricating apparatus, which includes a light emitting device, first and second contact parts, a power source part, a loading plate, and a chamber. The first and second contact parts are connected to the light emitting device to apply a first current to the light emitting device. The power source part supplies power to the first and second contact parts. The loading plate supports and heats the light emitting device. The chamber accommodates the light emitting device, the first and second contact parts, and the loading plate, and has a vacuum state or oxygen atmosphere.

Abstract: A light emitting device and a method of manufacturing the same are provided. The light emitting device comprises a first conductive type lower semiconductor layer, a current diffusion layer, a first conductive type upper semiconductor layer, an active layer, and a second conductive type semiconductor layer. The current diffusion layer is formed on the first conductive type lower semiconductor layer. The first conductive type upper semiconductor layer is formed on the current diffusion layer. The active layer is formed on the first conductive type upper semiconductor layer. The second conductive type semiconductor layer is formed on the active layer.

Abstract: Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting layer comprises a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. The active layer comprises a quantum well layer, a quantum barrier layer, and a dual barrier layer.

Abstract: A light emitting device is provided. In the light emitting device, a multi-layer for intercepting a reverse voltage applied to an active layer is formed between the active layer and a GaN layer. Accordingly, the reliability and operational characteristic of the light emitting device can be improved.

Abstract: Provided is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The active layer comprises a first active layer, a second active layer, an electron barrier layer on the first conductive type semiconductor layer. The first active layer and the second active layer comprise a quantum well layer and a quantum barrier layer. The electron barrier layer is formed between the first active layer and the second active layer. The second conductive type semiconductor layer is formed on the active layer.

Abstract: A semiconductor light emitting device and a light emitting apparatus having the semiconductor light emitting device are provided. The semiconductor light emitting device comprises a substrate, a light emitting structure disposed on the substrate and comprising a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer, a second electrode electrically connected to the second conductive type semiconductor layer, a plurality of first electrodes disposed on a plurality of sidewalls of the first conductive type semiconductor layer, and wherein the plurality of first electrodes are spaced apart from each other.

Abstract: A semiconductor light emitting device and a method of manufacturing the same are provided. The semiconductor light emitting device comprises a first conductive semiconductor layer comprising a concave portion, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer.

Abstract: A semiconductor light emitting device and a light emitting apparatus having the semiconductor light emitting device are provided. The semiconductor light emitting device comprises a substrate, a light emitting structure on the substrate, comprising a first conductive type semiconductor layer, an active layer, a second conductive type semiconductor layer, and a first electrode unit on sidewalls of the substrate and the first conductive type semiconductor layer.

Abstract: Disclosed is a nitride semiconductor light emitting device including: one or more AllnN layers; an In-doped nitride semiconductor layer formed above the AllN layers; a first electrode contact layer formed above the In-doped nitride semiconductor layer; an active layer formed above the first electrode contact layer; and a p-type nitride semiconductor layer formed above the active layer. According to the nitride semiconductor light emitting device, a crystal defect of the active layer is suppressed, so that the reliability of the nitride semiconductor light emitting device is increased and the light output is enhanced.

Abstract: There are provided a nitride semiconductor light-emitting device and a method for manufacturing the same. The nitride semiconductor light-emitting device includes a buffer layer on a sapphire substrate, wherein the buffer layer includes a plurality of layers having different lattice constants, a first n-type nitride semiconductor layer on the buffer layer, an active layer on the first n-type nitride semiconductor layer, and a p-type nitride semiconductor layer on the active layer.

Abstract: Provided is a light emitting device. In one embodiment, the light emitting device includes: a first conductive type semiconductor layer including a plurality of grooves; an active layer formed on a upper surface of the first conductive type semiconductor layer and along the grooves; an anti-current leakage layer having a flat upper surface on the active layer; and a second conductive type semiconductor layer on the anti-current leakage layer.

Abstract: Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting layer comprises a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. The active layer comprises a quantum well layer, a quantum barrier layer, and a dual barrier layer.

Abstract: Provided is a light emitting device fabricating apparatus, which includes a light emitting device, first and second contact parts, a power source part, a loading plate, and a chamber. The first and second contact parts are connected to the light emitting device to apply a first current to the light emitting device. The power source part supplies power to the first and second contact parts. The loading plate supports and heats the light emitting device. The chamber accommodates the light emitting device, the first and second contact parts, and the loading plate, and has a vacuum state or oxygen atmosphere.

Abstract: A light emitting device including a second metal layer, a second conduction type semiconductor layer on the second metal layer, an active layer on the second conduction type semiconductor layer, a first conduction type semiconductor layer on the active layer, a first metal layer on the first conduction type semiconductor layer, an insulating layer being disposed on a peripheral portion of an upper surface of the second metal layer and being disposed under a lower surface of the second conduction type semiconductor layer, and a passivation layer on lateral surfaces of the insulating layer, the second conduction type semiconductor layer, the active layer and the first conduction type semiconductor layer, the passivation layer being on an upper surface of the second metal layer, wherein a lateral surface of the insulating layer is adjacent to a lateral surface of the second metal layer.

Abstract: A light emitting device may include a first conductive semiconductor layer, an active layer adjacent to the first conductive semiconductor layer and a second conductive semiconductor layer adjacent to the active layer. The active layer may include a first quantum well layer, a second quantum well layer and a barrier layer between the first quantum well layer and the second quantum well layer. The first quantum well layer may include a first plurality of sub-barrier layers and a first plurality of sub-quantum well layers, and the second quantum well layer may include a second plurality of sub-barrier layers and a second plurality of sub-quantum well layers. A bandgap of the first quantum well layer may be different than a bandgap of the second quantum well layer.

Abstract: Provided is a light emitting device, which includes a second conductive type semiconductor layer, an active layer, a first conductive type semiconductor layer, and a intermediate refraction layer. The active layer is disposed on the second conductive type semiconductor layer. The first conductive type semiconductor layer is disposed on the active layer. The intermediate refraction layer is disposed on the first conductive type semiconductor layer. The intermediate refraction layer has a refractivity that is smaller than that of the first conductive type semiconductor layer and is greater than that of air.

Abstract: Disclosed is a light emitting device including a second conductive semiconductor layer; an active layer on the second conductive semiconductor layer; a first semiconductor layer on the active layer, the first semiconductor layer having at least one lateral side with a step portion; and a lateral electrode on the step portion formed at the at least one lateral side of the first semiconductor layer.

Abstract: A light emitting device according to an embodiment includes a first conductive semiconductor layer; a second conductive semiconductor layer; and an active layer including first and second active layers between the first and second conductive semiconductor layers. The first active layer emits light having a first wavelength band of 440 nm to 500 nm, and the second active layer emits light having a second wavelength band, which is shorter than the first wavelength band.

Abstract: Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: a first conductive type semiconductor layer; an active layer on the first conductive type semiconductor layer; an undoped semiconductor layer on the active layer; a first delta-doped layer on the undoped semiconductor layer; and a second conductive type semiconductor layer on the first delta-doped layer.

Abstract: Provided is a light emitting device, which includes a first conductive type semiconductor layer, an active layer, a roughness pattern, and a second conductive type semiconductor layer. The active layer is disposed on the first conductive type semiconductor layer. The roughness pattern is disposed on the active layer. The second conductive type semiconductor layer is disposed on the roughness pattern and the active layer, and includes a metal oxide.