Abstract: A semiconductor light emitting device and a light emitting apparatus having the semiconductor light emitting device are provided. The semiconductor light emitting device comprises a substrate, a light emitting structure on the substrate, comprising a first conductive type semiconductor layer, an active layer, a second conductive type semiconductor layer, and a first electrode unit on sidewalls of the substrate and the first conductive type semiconductor layer.

Abstract: Provided is a light emitting device. The light emitting device comprises a second electrode layer, a second conduction type semiconductor layer, an active layer, a first conduction type semiconductor layer, a first electrode layer, and an insulating layer. The second conduction type semiconductor layer is formed on the second electrode layer. The active layer is formed on the second conduction type semiconductor layer. The first conduction type semiconductor layer is formed on the active layer. The first electrode layer is formed on the first conduction type semiconductor layer. The insulating layer is disposed between the second electrode layer and the second conduction type semiconductor layer.

Abstract: Provided is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The active layer comprises a quantum barrier layer and a quantum well layer on the first conductive type semiconductor layer. An indium (In) composition ratio of the quantum well layer is changed in a graded manner. The second conductive type semiconductor layer is disposed on the active layer.

Abstract: Provided are a light emitting device and a method of fabricating the same, The light emitting device comprises: a first conductive semiconductor layer; an active layer comprising an InGaN well layer and a GaN barrier layer on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer. The GaN barrier layer comprises an AlGaN layer.

Abstract: A semiconductor light emitting device and a method of manufacturing the same are provided. The semiconductor light emitting device comprises a substrate, a mask seed layer formed on the substrate and comprising a TI group element, a nitride layer formed on the mask seed layer and comprising a III group element, a first conductive semiconductor layer on the nitride layer, an active layer on the first conductive layer, and a second conducive semiconductor layer on the active layer.

Abstract: Provided is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The active layer comprises a first active layer, a second active layer, an electron barrier layer on the first conductive type semiconductor layer. The first active layer and the second active layer comprise a quantum well layer and a quantum barrier layer. The electron barrier layer is formed between the first active layer and the second active layer. The second conductive type semiconductor layer is formed on the active layer.

Abstract: A wafer recycling method comprises varying a temperature and pressure conditions to remove a first semiconductor layer deposited on a wafer, removing a remaining semiconductor layer on the wafer through a chemical or physical process, and washing the wafer.

Abstract: Provided is a light emitting device comprising a first conductive type semiconductor layer, an active layer, a semiconductor layer comprising Al, a high-concentration semiconductor layer, a low-mole InxGa1?xN layer, and a second conductive type semiconductor layer. The active layer is on the first conductive type semiconductor layer and emits light. The semiconductor layer comprising Al is on the active layer. The high-concentration semiconductor layer is on the semiconductor layer comprising Al. The low-mole InxGa1?xN layer is on the high-concentration semiconductor layer. The second conductive type semiconductor layer is on the low-mole InxGa1?xN layer.

Abstract: A light emitting device and a method of manufacturing the same are provided. The light emitting device comprises a first conductive type lower semiconductor layer, a current diffusion layer, a first conductive type upper semiconductor layer, an active layer, and a second conductive type semiconductor layer. The current diffusion layer is formed on the first conductive type lower semiconductor layer. The first conductive type upper semiconductor layer is formed on the current diffusion layer. The active layer is formed on the first conductive type upper semiconductor layer. The second conductive type semiconductor layer is formed on the active layer.

Abstract: Embodiments of a light emitting device are provided. A light emitting device can include a first electrode, a first condition type semiconductor layer, an active layer, a second conduction type semiconductor layer, a second electrode, and a substrate. The first conduction type semiconductor layer can be formed on the first electrode. The active layer can be formed on the first conduction type semiconductor layer. The second conduction type semiconductor layer can be formed on the active layer. The second electrode can be formed on the second conduction type semiconductor layer. The substrate is on the lateral sides of the first conduction type semiconductor layer, the active layer, and the second conduction type semiconductor layer.

Abstract: A light emitting device is provided. In the light emitting device, a multi-layer for intercepting a reverse voltage applied to an active layer is formed between the active layer and a GaN layer. Accordingly, the reliability and operational characteristic of the light emitting device can be improved.