Abstract: The invention relates to an apparatus and method for growing a high quality Si single crystal ingot and a Si single crystal ingot and wafer produced thereby. The growth apparatus controls the oxygen concentration of the Si single crystal ingot to various values thereby producing the Si single crystal ingot with high productivity and extremely controlled growth defects.

Abstract: The present invention relates to an apparatus and a method for supplying a solid raw material to a grower of silicon or germanium semiconductor single crystal. In the solid raw material supply apparatus including a cylindrical body mounted above a crucible for receiving the solid raw material therein, a bottom cover detachably installed in the lower end of the body and basically formed in the shape of a cone, and a connection means for relatively moving the bottom cover upwards and downwards with regard to the body, the conic bottom cover is made from the same material as a semiconductor to be grown to the single crystal and the solid raw material is charged while the bottom cover is spaced away from the melt in the crucible at a predetermined distance, thereby the bottom cover can be used repetitively, and even though the bottom cover is broken by shocks resulted from the fall of the solid raw material, fragments of the bottom cover do not contaminate the melt.

Abstract: The inventive quality evaluation method for a single crystal ingot generally includes a step of determining cropping and sampling positions and a step of evaluating a sample. The step of determining cropping and sampling positions includes: (a) inputting basic information on the decision of cropping, sampling and prime positions according to equipments and products, (b) predetermining the cropping, sampling and prime positions according to the basic information, (c) monitoring a growing process of a growing ingot and analyzing/storing X factors related with the growing process of the growing ingot, and (d) determining the cropping and sampling positions based on the X factors related with the growing process.

Abstract: In a method for producing a high quality silicon single crystal by the Czochralski method, a lower portion of a solid-liquid interface of a single crystal growth is divided into a central part and a circumferential part, and the temperature gradient of the central part and the temperature gradient of the circumferential part are separately controlled. When a silicon melt located at a lower portion of a solid-liquid interface of a single crystal growth is divided into a central part melt and a circumferential part melt, the method controls the temperature gradient of the central part melt by directly controlling the temperature distribution of a melt and indirectly controls the temperature gradient of the circumferential part melt by controlling the temperature gradient of the single crystal, thereby effectively controlling the overall temperature distribution of the melt, thus producing a high quality single crystal ingot free of defects with a high growth velocity.

Abstract: A method for growing a silicon single crystal ingot by a Czochralski method, which is capable of providing silicon wafers having very uniform in-plane quality and which results in improvement of semiconductor device yield. A method is provided for producing a silicon single crystal ingot by a Czochralski method, wherein when convection distribution of a silicon melt is divided into a core cell and an outer cell, the silicon single crystal ingot is grown under the condition that the maximal horizontal direction width of the core cell is 30 to 60% of a surface radius of the silicon melt. In one embodiment the silicon single crystal ingot is grown under the condition that the maximal vertical direction depth of the core cell is equal to or more than 50% of the maximal depth of the silicon melt.

Abstract: The invention relates to an apparatus and method for growing a high quality Si single crystal ingot and a Si single crystal ingot and wafer produced thereby. The growth apparatus controls the oxygen concentration of the Si single crystal ingot to various values thereby producing the Si single crystal ingot with high productivity and extremely controlled growth defects.

Abstract: The invention relates to a technique for producing a high quality Si single crystal ingot with a high productivity by the Czochralski method. The technique of the invention can control the magnetic field strength of an oxygen dissolution region different from that of a solid-liquid interface region in order to control the oxygen concentration at a desired value.

Abstract: A silicon single crystal ingot growing apparatus for growing a silicon single crystal ingot based on a Czochralski method The silicon single crystal ingot growing apparatus includes a chamber; a crucible provided in the chamber, and for containing a silicon melt; a heater provided at the outside of the crucible and for heating the silicon melt; a pulling unit for ascending a silicon single crystal grown from the silicon melt; and a plurality of magnetic members provided at the outside of the chamber and for asymmetrically applying a magnetic field to the silicon melt Such a structure can uniformly controls an oxygen concentration at a rear portion of a silicon single crystal ingot using asymmetric upper/lower magnetic fields without replacing a hot zone In addition, such a structure can controls a flower phenomenon generated on the growth of the single crystal by the asymmetric magnetic fields without a loss such as the additional hot zone (H/Z) replacement, P/S down, and SR variance.

Abstract: Disclosed is a metod of fabrication of high quality silicon single crystal at high growth rate. The method grows silicon single crystal from silicon melt by Czochralski method, wherein the silicon single crystal is grown according to conditions that the silicon melt has an axial temperature gradient determined according to an equation, {(?Tmax??Tmin)/?Tmin}×100?10, wherein ?Tmax is a maximum axial temperature gradient of the silicon melt and ?Tmin is a minimum axial temperature gradient of the silicon melt, when the axial temperature gradient is measured along an axis parallel to a radial direction of the silicon single crystal.

Abstract: Disclosed is a method of growing a single crystal from a melt contained in a crucible. The method includes the step of making the temperature of a melt increase gradually to a maximum point and then decrease gradually along the axis parallel to the lengthwise direction of the single crystal from the interface of the single crystal and the melt to the bottom of the crucible. The increasing temperature of the melt is kept to preferably have a greater temperature gradient than the decreasing temperature thereof. Preferably, the axis is set to pass through the center of the single crystal. Preferably, the convection of the inner region of the melt is made smaller than that of the outer region thereof.

Abstract: A method for growing a silicon single crystal ingot by a Czochralski method, which is capable of providing silicon wafers having very uniform in-plane quality and which results in improvement of semiconductor device yield. A method is provided for producing a silicon single crystal ingot by a Czochralski method, wherein when convection of a silicon melt is divided into a core cell and an outer cell, the silicon single crystal ingot is grown under the condition that the maximal horizontal direction width of the core cell is 30 to 60% of a surface radius of the silicon melt. In one embodiment the silicon single crystal ingot is grown under the condition that the maximal vertical direction depth of the core cell is equal to or more than 50% of the maximal depth of the silicon melt.

Abstract: The present invention relates to a single crystalline silicon ingot, a single crystalline wafer, and a producing method thereof in accordance with the Czochralski method which enables reduction of a large defect area while increasing a micro-vacancy defect area in an agglomerated vacancy point area, which is the area between a central axis and an oxidation-induced stacking fault ring, by providing uniform conditions of crystal ingot growth and cooling and by adjusting a pulling rate for growing an ingot to grow, thus the oxidation-induced stacking fault ring exists only at an edge of the ingot radius.

Abstract: A method for growing a silicon single crystal ingot by a Czochralski method, which is capable of providing silicon wafers having very uniform in-plane quality and which results in improvement of semiconductor device yield. A method is provided for producing a silicon single crystal ingot by a Czochralski method, wherein when convection of a silicon melt is divided into a core cell and an outer cell, the silicon single crystal ingot is grown under the condition that the maximal horizontal direction width of the core cell is 30 to 60% of a surface radius of the silicon melt. In one embodiment the silicon single crystal ingot is grown under the condition that the maximal vertical direction depth of the core cell is equal to or more than 50% of the maximal depth of the silicon melt.

Abstract: An apparatus for growing a silicon ingot including a graphite crucible in which a quartz crucible is placed, a driving axis connected to a lower part of the graphite crucible to revolve and move the graphite crucible up and down so as to support the graphite crucible, a heating element to heat the graphite crucible, and an insulating wall to protect and thermally isolate the graphite crucible, heating means, and driving axis in part from the external environment. The driving axis includes a hollow axis part having a hollow inside, an insulating axis part attached to the bottom of the hollow axis part to inhibit heat transfer, and a cylindrical axis part attached to the bottom of the insulating axis part. The construction of the driving axis reduces a temperature gradient in the molten silicon, improving uniform heat distribution for increased silicon ingot quality.

Abstract: The present invention relates to a single crystalline silicon ingot, a single crystalline wafer, and a producing method thereof in accordance with the Czochralski method which enables reduction of a large defect area while increasing a micro-vacancy defect area in an agglomerated vacancy point area, which is the area between a central axis and an oxidation-induced stacking fault ring, by providing uniform conditions of crystal ingot growth and cooling and by adjusting a pulling rate for growing an ingot to grow, thus the oxidation-induced stacking fault ring exists only at an edge of the ingot radius.

Abstract: A chamber with a quartz crucible established therein for growing a single crystalline ingot with a predetermined diameter D which is to be put in the crucible. The quartz crucible is wrapped in a crucible supporter fixed to a rotational axis, with a heater surrounding the crucible support and a thermos surrounding the heater to prevent heat radiated from the heater from propagating into a wall of the chamber. A thermal shield is included which has a first cylindrical shielding part installed between the ingot and the crucible, a second flange type shielding part connected to an upper part of the first shielding part, and a third shielding part connected to a lower part of the first shielding part and protruding toward the ingot.

Abstract: The present invention relates to a single crystalline silicon ingot, a single crystalline wafer, and a producing method thereof in accordance with the Czochralski method which enables reduction of a large defect area while increasing a micro-vacancy defect area in an agglomerated vacancy point area, which is the area between a central axis and an oxidation-induced stacking fault ring, by providing uniform conditions of crystal ingot growth and cooling and by adjusting a pulling rate for growing an ingot to grow, thus the oxidation-induced stacking fault ring exists only at an edge of the ingot radius.

Abstract: An apparatus for growing a silicon ingot including a graphite crucible in which a quartz crucible is placed, a driving axis connected to a lower part of the graphite crucible to revolve and move the graphite crucible up and down so as to support the graphite crucible, a heating element to heat the graphite crucible, and an insulating wall to protect and thermally isolate the graphite crucible, heating means, and driving axis in part from the external environment. The driving axis includes a hollow axis part having a hollow inside, an insulating axis part attached to the bottom of the hollow axis part to inhibit heat transfer, and a cylindrical axis part attached to the bottom of the insulating axis part. The construction of the driving axis reduces a temperature gradient in the molten silicon, improving uniform heat distribution for increased silicon ingot quality.

Abstract: A chamber with a quartz crucible established therein for growing a single crystalline ingot with a predetermined diameter D which is to be put in the crucible. The quartz crucible is wrapped in a crucible supporter fixed to a rotational axis, with a heater surrounding the crucible support and a thermos surrounding the heater to prevent heat radiated from the heater from propagating into a wall of the chamber. A thermal shield is included which has a first cylindrical shielding part installed between the ingot and the crucible, a second flange type shielding part connected to an upper part of the first shielding part, and a third shielding part connected to a lower part of the first shielding part and protruding toward the ingot.

Abstract: The present invention relates to a single crystalline silicon ingot by Czochralski method and, more particularly, to a single crystalline silicon ingot, a wafer and a method of producing a single crystalline silicon ingot in which an oxidation-induced stacking fault ring is distributed widely and which has an agglomerated vacancy point defect area of low density wherein DSOD exists only, without FPD. Accordingly, an oxidation-induced stacking fault area having a micro-vacancy defect area of low density is distributed widely from the ingot edge to the ingot center in a single crystalline silicon ingot and a wafer fabricated by the present invention. As the micro-vacancy defect area has no FPD but may have DSOD, a coarsely agglomerated vacancy point defect area in which FPD and DSOD cohabit is shrunken or even eliminated. Therefore, the present invention improves the product quality as well as device yield.