Abstract: A deposition apparatus includes: a chamber; a deposition source disposed in the chamber; a rotating plate disposed in the chamber, where an inkjet head is fixed to the rotating plate to allow a nozzle plate of the inkjet head to be vertically aligned with the deposition source; and a first driving unit disposed in the chamber, where the first driving unit rotates the rotating plate about a vertical axis.

Abstract: A semiconductor device includes a substrate, a gate electrode on the substrate, a gate spacer on a sidewall of the gate electrode, an active pattern penetrating the gate electrode and the gate spacer, and an epitaxial pattern contacting the active pattern and the gate spacer. The gate electrode extends in a first direction. The gate spacer includes a semiconductor material layer. The active pattern extends in a second direction crossing the first direction.

Abstract: The proposed is directed to a shampoo assisting device that is mounted on a wash basin, a bathtub, a sink, etc. with a simple configuration to allow the user to be shampooed while lying down. The shampoo assisting device includes a main body having a locking part provided on one side and a headrest part provided on the other side to support a user's head, and a first support protruding from a lower portion of the main body so as to be closely supported by a bottom surface of a wash basin.

Abstract: The proposed is directed to a shampoo assisting device that is mounted on a wash basin, a bathtub, a sink, etc. with a simple configuration to allow the user to be shampooed while lying down. The shampoo assisting device includes a main body having a locking part provided on one side and a headrest part provided on the other side to support a user's head, and a first support protruding from a lower portion of the main body so as to be closely supported by a bottom surface of a wash basin.

Abstract: Example embodiments relate to a stacking structure having a material layer formed on a graphene layer, and a method of forming the material layer on the graphene layer. In the stacking structure, when the material layer is formed on the graphene layer by using an ALD method, an intermediate layer as a seed layer may be formed on the graphene layer by using a linear type precursor.

Abstract: A semiconductor device includes a substrate, a gate electrode on the substrate, a gate spacer on a sidewall of the gate electrode, an active pattern penetrating the gate electrode and the gate spacer, and an epitaxial pattern contacting the active pattern and the gate spacer. The gate electrode extends in a first direction. The gate spacer includes a semiconductor material layer. The active pattern extends in a second direction crossing the first direction.

Abstract: A semiconductor device includes a gate electrode extending in a first direction on a substrate, a first active pattern extending in a second direction intersecting the first direction on the substrate to penetrate the gate electrode, the first active pattern including germanium, an epitaxial pattern on a side wall of the gate electrode, a first semiconductor oxide layer between the first active pattern and the gate electrode, and including a first semiconductor material, and a second semiconductor oxide layer between the gate electrode and the epitaxial pattern, and including a second semiconductor material. A concentration of germanium of the first semiconductor material may be less than a concentration of germanium of the first active pattern, and the concentration of germanium of the first semiconductor material may be different from a concentration of germanium of the second semiconductor material.

Abstract: A semiconductor device includes a gate electrode extending in a first direction on a substrate, a first active pattern extending in a second direction intersecting the first direction on the substrate to penetrate the gate electrode, the first active pattern including germanium, an epitaxial pattern on a side wall of the gate electrode, a first semiconductor oxide layer between the first active pattern and the gate electrode, and including a first semiconductor material, and a second semiconductor oxide layer between the gate electrode and the epitaxial pattern, and including a second semiconductor material. A concentration of germanium of the first semiconductor material may be less than a concentration of germanium of the first active pattern, and the concentration of germanium of the first semiconductor material may be different from a concentration of germanium of the second semiconductor material.

Abstract: A semiconductor device includes a substrate, a gate electrode on the substrate, a gate spacer on a sidewall of the gate electrode, an active pattern penetrating the gate electrode and the gate spacer, and an epitaxial pattern contacting the active pattern and the gate spacer. The gate electrode extends in a first direction. The gate spacer includes a semiconductor material layer. The active pattern extends in a second direction crossing the first direction.

Abstract: A semiconductor device includes a substrate including an active region, a plurality of conductive line structures separate from the substrate, a plurality of contact plugs between the plurality of conductive line structures, a plurality of landing pads connected to a corresponding contact plug of the plurality of contact plugs, a landing pad insulation pattern between the plurality of landing pads, and a first insulation spacer between the landing pad insulation pattern and first conductive line structures from among the plurality of conductive line structures.

Abstract: A method of manufacturing a semiconductor device includes: forming bit line structures spaced apart from each other by first groove disposed in first direction, extending in first direction, and spaced apart from each other in second direction perpendicular to first direction, on substrate in which word line is buried; forming multilayer spacer on both sidewalls of bit line structure; forming sacrificial layer to fill first groove; forming second grooves spaced apart from each other in first direction and second direction, by patterning sacrificial layer; etching outermost spacer of multilayer spacer located in second groove; forming first supplementary spacer in second groove; forming insulating layer to fill second groove; and forming third grooves spaced apart from each other in first direction and second direction, on both sides of first supplementary spacer, by removing sacrificial layer and insulating layer.

Abstract: Provided is a method of manufacturing a semiconductor device. The method includes forming isolated contact filling portions and an etch control portion, the isolated contact filling portions filling contact holes defined in a support layer and are spaced apart from each other in a first direction and a second direction perpendicular to the first direction and the etch control layer surrounding the isolated contact filling portions, forming an interconnection layer on the isolated contact filling portions and the etch control portion, and forming interconnection patterns by photo-etching the interconnection layer, the isolated contact patterns, and the etch control portion, the interconnection patterns being relatively narrow in the first direction and relatively wide in the second direction.

Abstract: A semiconductor device includes a semiconductor substrate including a plurality of active areas, a bit line crossing the plurality of active areas, a direct contact connecting a first active area of the plurality of active areas with the bit line, an insulating spacer covering a side wall of the bit line and extending at a level lower than a level of an upper surface of the semiconductor substrate, a contact pad connected with a side wall of a second active area of the plurality of active areas, which neighbors the first active area, a first insulating pattern defining a contact hole exposing the insulating spacer and the contact pad, and a buried contact connected with the contact pad and filling the contact hole.

Abstract: A method of manufacturing a semiconductor device includes: forming bit line structures spaced apart from each other by first groove disposed in first direction, extending in first direction, and spaced apart from each other in second direction perpendicular to first direction, on substrate in which word line is buried; forming multilayer spacer on both sidewalls of bit line structure; forming sacrificial layer to fill first groove; forming second grooves spaced apart from each other in first direction and second direction, by patterning sacrificial layer; etching outermost spacer of multilayer spacer located in second groove; forming first supplementary spacer in second groove; forming insulating layer to fill second groove; and forming third grooves spaced apart from each other in first direction and second direction, on both sides of first supplementary spacer, by removing sacrificial layer and insulating layer.

Abstract: Provided is a method of manufacturing a semiconductor device. The method includes: forming bit line structures spaced apart from each other by first groove disposed in first direction, extending in first direction, and spaced apart from each other in second direction perpendicular to first direction, on substrate in which word line is buried; forming multilayer spacer on both sidewalls of bit line structure; forming sacrificial layer to fill first groove; forming second grooves spaced apart from each other in first direction and second direction, by patterning sacrificial layer; etching outermost spacer of multilayer spacer located in second groove; forming first supplementary spacer in second groove; forming insulating layer to fill second groove; and forming third grooves spaced apart from each other in first direction and second direction, on both sides of first supplementary spacer, by removing sacrificial layer and insulating layer.

Abstract: A method of manufacturing a semiconductor device includes forming an isolation layer on a substrate, where an active pattern is defined, forming an insulating interlayer on the active pattern of the substrate and the isolation layer, removing portions of the insulating interlayer, the active pattern and the isolation layer to form a first recess, forming a first contact in the first recess on a first region of the active pattern exposed by the first recess, removing portions of the active pattern and the isolation layer in the first recess by performing an isotropic etching process, to form an enlarged first recess, and filling the enlarged first recess to form a first spacer that surrounds a sidewall of the first contact.

Abstract: A semiconductor device includes a semiconductor substrate including a plurality of active areas, a bit line crossing the plurality of active areas, a direct contact connecting a first active area of the plurality of active areas with the bit line, an insulating spacer covering a side wall of the bit line and extending at a level lower than a level of an upper surface of the semiconductor substrate, a contact pad connected with a side wall of a second active area of the plurality of active areas, which neighbors the first active area, a first insulating pattern defining a contact hole exposing the insulating spacer and the contact pad, and a buried contact connected with the contact pad and filling the contact hole.

Abstract: A semiconductor device includes a substrate including an active region, a plurality of conductive line structures separate from the substrate, a plurality of contact plugs between the plurality of conductive line structures, a plurality of landing pads connected to a corresponding contact plug of the plurality of contact plugs, a landing pad insulation pattern between the plurality of landing pads, and a first insulation spacer between the landing pad insulation pattern and first conductive line structures from among the plurality of conductive line structures.

Abstract: Example embodiments relate to a stacking structure having a material layer formed on a graphene layer, and a method of forming the material layer on the graphene layer. In the stacking structure, when the material layer is formed on the graphene layer by using an ALD method, an intermediate layer as a seed layer may be formed on the graphene layer by using a linear type precursor.