Abstract: Disclosed is a neuron circuit, which includes a first bias circuit that adds a bias current to an input current to generate a biased input current, a logarithm-based neuron calculation circuit that performs a logarithm calculation on an amount of current of the biased input current to generate an input logarithm value and generates a biased output voltage by performing a logarithm-based Hodgkin-Huxley model calculation based on the input logarithm value, and a second bias circuit that adds a bias voltage to the biased output voltage to generate an output voltage.

Abstract: An apparatus of predicting the congestion time point may include a first deep learning device that outputs first output data using traffic speed data during a first time, a second deep learning device that outputs second output data using traffic volume data during a second time, and a congestion time point prediction model that predicts the congestion time point using at least a portion of the first output data and the second output data.

Abstract: A semiconductor memory device includes a substrate, contact electrodes extending in a first direction, each of the contact electrodes including a connection portion having a first thickness and a landing portion having a second thickness, an uppermost contact electrode above the contact electrodes, the contact electrodes being longer in the first direction than the uppermost contact electrode and defining a step structure, transistor bodies extending in a second direction and having a first source/drain, a monocrystalline channel layer, and a second source/drain sequentially arranged in the second direction, the monocrystalline channel layer being connected to a corresponding contact electrode, a lower electrode layer connected to the second source/drain of each of the transistor bodies, a capacitor dielectric layer covering the lower electrode layer and having a uniform thickness, and an upper electrode layer separated from the lower electrode layer by the capacitor dielectric layer.

Abstract: The present disclosure relates to an apparatus and method for controlling a vehicle. The processor determines whether a current driving situation of a broken vehicle in which the failure occurs is a parking mode or a driving mode, executes the parking mode logic such that the parking mode logic searches for a parking location of the broken vehicle and parks the broken vehicle at the parking location, when the current driving situation is the parking mode, executes the driving mode logic such that the broken vehicle drives on driving route excluding a ramp while the broken vehicle maintains a first inter-vehicle distance from a forward vehicle, when the current driving situation is the driving mode, and executes the driving mode logic such that the broken vehicle drives while the broken vehicle maintains a second inter-vehicle distance longer than the first inter-vehicle distance, when the driving route includes a congestion section.

Abstract: An all-solid-state battery includes a electrode assembly including a laminate comprising a solid electrolyte layer, and a negative electrode layer and a positive electrode layer stacked with the solid electrolyte layer interposed therebetween, and an insulating member, the laminate being wound around the insulating member in such a manner that one surface of the negative electrode layer and/or the positive electrode layer is parallel to a central axis of the insulating member in a stacking direction thereof, a negative terminal connected to the negative electrode layer, and a positive terminal connected to the positive electrode layer. When a direction of the central axis of the insulating member is a third direction, the negative terminal is disposed on one surface of the electrode assembly in the third direction, and the positive terminal is disposed on the other surface of the electrode assembly in the third direction.

Abstract: The present disclosure relates to a compound derivative containing a 6-7 bicyclic ring and use thereof. The compound according to the present disclosure can be effectively used in the prevention or treatment of diseases caused by PRMT5 by acting as a PRMT5 inhibitor.

Abstract: A semiconductor device and an electronic system including the same are provided. The semiconductor device may include a stacked structure including electrodes stacked on a substrate, interlayer insulating layers interposed between the electrodes, and an upper insulating layer covering the uppermost electrode among the electrodes, and a vertical structure passing through the stacked structure in a vertical direction, and each of the interlayer insulating layers may have a first thickness, and the upper insulating layer may have a second thickness greater than the first thickness, and the upper insulating layer may include an insulating material different from an insulating material of each of the interlayer insulating layers.

Abstract: A negative electrode active material which includes a core including SiOx (0<x<2), a shell disposed on the core and includes lithium silicate, and a coating layer disposed on the shell and includes carbon nanotubes. Also, a method of preparing a negative electrode active material as well as a negative electrode and a battery including the same.

Abstract: A display apparatus includes: a pixel part including a plurality of pixels, each of the plurality of pixels to receive a first scan signal and an emission signal; and a scan driver to output the first scan signal and the emission signal to each of the plurality of pixels. In a second driving mode in which the display apparatus is driven with a first driving frequency lower than a maximum driving frequency, the scan driver is to supply the first scan signal to the plurality of pixels according to the first driving frequency, and supply the emission signal to the plurality of pixels according to the maximum driving frequency.

Abstract: A semiconductor device includes a substrate, a data storage structure on the substrate, an insulating structure spaced apart from the data storage structure on the substrate, conductive lines spaced apart from each other and stacked in a vertical direction between the data storage structure and the insulating structure, active layers spaced apart from each other and stacked in the vertical direction between the data storage structure and the insulating structure, and intersecting the conductive lines, and a conductive pattern between the insulating structure and the active layers, and electrically connected to the active layers. The insulating structure includes first insulating patterns spaced apart from each other in a first horizontal direction, and a second insulating pattern between the first insulating patterns. The conductive pattern is between the second insulating pattern and the active layers. The second insulating pattern includes a material different from that of the first insulating patterns.

Abstract: Disclosed is a spike neural network circuit including an axon circuit that generates a first input spike signal, a conversion table that converts a first fire probability of a first neuron corresponding to the first input spike signal into a first threshold value, and a probabilistic operator. The probabilistic operator includes a random number generator that generates a random number value based on an event that the first input spike signal is at a first logic level, a random number comparator that generates a first comparison signal by comparing the first threshold value with the random number value, and a spike generator that generates an output spike signal corresponding to the first neuron based on an event that the first comparison signal is at the first logic level.

Abstract: A camera module includes a housing accommodating a lens module, a driving unit including a magnet disposed on the lens module and a coil disposed to face the magnet, a yoke generating attractive force with the magnet, a first ball member accommodated in a first receiving space disposed between the lens module and the housing, and pressed by the attractive force, and a second ball member accommodated in a second receiving space disposed between the lens module and the housing, and pressed by the attractive force. A length of the first receiving space in an optical axis direction is different from a length of the second receiving space in the optical axis direction.

Abstract: The present disclosure relates to a compound derivative containing a 6-7 bicyclic ring and use thereof. The compound according to the present invention can be effectively used in the prevention or treatment of diseases caused by PRMT5 by acting as a PRMT5 inhibitor.

Abstract: A display device includes a first bank and a second bank spaced apart from each other on a substrate, at least one semiconductor layer disposed between the first bank and the second bank, a first electrode disposed on the first bank and electrically connected to a part of the at least one semiconductor layer, an organic functional layer disposed on another part of the semiconductor layer and comprising at least an organic light emitting layer, and a second electrode disposed on the organic functional layer.

Abstract: Provided are a device and method for SoC balance control for a delta structure semiconductor transformer-based energy storage device, for operating a charging and discharging time of a system by controlling balance of battery SoC of a PCS connected by a delta connection so as to prevent overdischarging and overcharging of a specific battery, controlling a zero-phase-sequence component of the delta connection to balance the battery SoC for each phase, and controlling balance of an individual battery SoC. The device for SoC balance control for a delta structure semiconductor transformer-based energy storage device of the present invention is composed of an SoC balance control device that controls charging and discharging of a battery such that, in a PCS that performs charging and discharging from three-phase AC power, an A-phase, a B-phase, and a C-phase PCS connected by a delta connection, and the battery SoC of the PCS, are balanced.

Abstract: A semiconductor device includes a first substrate including a cell region and surrounded by an extension region, a common source plate on the first substrate, a supporter on the common source plate, a first stack structure on the supporter and including an alternately stacked first insulating film and first gate electrode, a channel hole penetrating the first stack structure, the supporter, and the common source plate on the cell region, and an electrode isolation trench spaced apart from the channel hole in a first direction on the cell region, extending in a second direction, and penetrating the first stack structure, the supporter, and the common source plate, wherein a first thickness of the supporter in a first region adjacent to the electrode isolation trench is greater than a second thickness of the supporter in a second region formed between the electrode isolation trench and the channel hole.

Abstract: The present invention relates to a coating composition which is an anticorrosive paint for ship structures and can be coated by a regular airless painting machine, and is solvent-free or contains a low solvent content. The coating composition according to an embodiment of the present invention may exhibit excellent pot life, atomization and drying time, and is eco-friendly due to having a high solid content and thus lower VOC emissions.

Abstract: Disclosed are methods of forming PN junction structures, methods of fabricating semiconductor devices using the same, and semiconductor devices fabricated by the same. The method of forming a PN junction structure includes: forming on a substrate a first material layer that includes first transition metal atoms and first chalcogen atoms, loading the first material layer into a process chamber and supplying a gas of second chalcogen atoms, and forming a second material layer by substituting the second chalcogen atoms for the first chalcogen atoms on a selected portion of the first material layer. The first material layer has one of n-type conductivity and p-type conductivity. The second material layer has the other of the n-type conductivity and the p-type conductivity.

Abstract: A camera module includes a housing having an internal space, a printed circuit board disposed in the housing, and a reflective module disposed in the internal space of the housing and comprising a reflective member configured to change a path of incident light, and a reflective holder supporting the reflective member; and a noise prevention unit disposed on either the housing or the printed circuit board and configured to prevent the reflective holder from contacting the housing.

Abstract: An apparatus and a method for predicting a traffic speed are disclosed. The apparatus includes a controller that learns a deep auto-encoder to output a past traffic speed and a future traffic speed by inputting the past traffic speed, and predicts the future traffic speed based on the deep auto-encoder which completes the learning, and storage that stores the deep auto-encoder which completes the learning.