Abstract: An image sensor includes a two-dimensional array of image sensor pixels, which are formed in a semiconductor layer. Each image sensor pixel is formed in a substrate having a corresponding semiconductor region therein. Each semiconductor region contains at least first and second photoelectric conversion elements, which are disposed at side-by-side locations therein. An electrically insulating isolation region is also provided, which extends at least partially through the semiconductor region and at least partially between the first and second photoelectric conversion elements, which may be configured respectively as first and second semiconductor regions of first conductivity type (e.g., N-type). At least one optically reflective region is also provided, which extends at least partially through the semiconductor region and surrounds at least a portion of at least one of the first and second photoelectric conversion elements. A semiconductor floating diffusion (FD) region (e.g.

Abstract: Provided is an image sensor having a hybrid pixel structure in which pixels that sense visible light and pixels that sense ultraviolet light or infrared light are arranged together. For example, the image sensor includes a plurality of first pixels and a plurality of second pixels that are different in size. A width of each of the plurality of second pixels in a horizontal direction is a first integer multiple of a width of each of the plurality of first pixels in the horizontal direction, and a width of each of the plurality of second pixels in a vertical direction is a second integer multiple of a width of each of the plurality of first pixels in the vertical direction. The image sensor enables the pixels sensing ultraviolet light or infrared light, which have different sizes from the pixels sensing visible light, to be efficiently arranged together with the pixels sensing visible light, on the same substrate.

Abstract: A unit pixel of an image sensor which operates in global shutter mode is provided. The unit pixel includes a photo diode area including a photo diode configured to accumulate photocharges generated from incident light during a first period and a storage diode area including a storage diode configured to receive and store the photocharges from the photo diode. The photo diode corresponds to a micro lens that focuses the incident light.

Abstract: An image sensor includes a semiconductor substrate, a first pair of photoelectric conversion regions in a first pixel region of the substrate and a first isolation structure between the photoelectric conversion regions of the first pair of photoelectric conversion regions. The sensor further includes a second pair of photoelectric conversion regions in a second pixel region of the substrate adjacent the first pixel region and a second isolation structure between the photoelectric conversion regions of the second pair of photoelectric conversion regions and having different optical properties than the first isolation structure. First and second different color filters (e.g., green and red) may be disposed on respective ones of the first and second pixel regions.

Abstract: A High electron mobility transistor (HEMT) includes a source electrode, a gate electrode, a drain electrode, a channel forming layer in which a two-dimensional electron gas (2DEG) channel is induced, and a channel supplying layer for inducing the 2DEG channel in the channel forming layer. The source electrode and the drain electrode are located on the channel supplying layer. A channel increase layer is between the channel supplying layer and the source and drain electrodes. A thickness of the channel supplying layer is less than about 15 nm.

Abstract: An image sensor according to an example embodiment concepts includes a pixel array including pixels, and each of the pixels includes photoelectric conversion elements. The photoelectric conversion elements independently operating to detect a phase difference. The image sensor further includes a control circuit configured to independently control exposure times of each of the photoelectric conversion elements included in each of the pixels.

Abstract: An image pixel includes a plurality of photodiodes formed in a semiconductor substrate, and a plurality of trenches. Each photodiode is configured to accumulate a plurality of photocharges corresponding to the intensity of light received at each photodiode through a microlens. The plurality of trenches is configured to electrically isolate the photodiodes from one another.

Abstract: The present invention relates to a suturing bead, a suturing needle, a side suction cap and to an endoscopic organ suturing implement using same. More specifically, the present invention relates to an endoscopic organ suturing implement comprising a suturing bead which can be naturally rested lying against the organ wall during discharge, a suturing needle by means of which it is possible to control discharge of the suturing bead, and a side suction cap constituted in such a way as to be able to prevent damage to other organs during surgery.

Abstract: An image sensor according to an example embodiment concepts includes a pixel array including pixels, and each of the pixels includes photoelectric conversion elements. The photoelectric conversion elements independently operating to detect a phase difference. The image sensor further includes a control circuit configured to independently control exposure times of each of the photoelectric conversion elements included in each of the pixels.

Abstract: Provided is an image sensor having a hybrid pixel structure in which pixels that sense visible light and pixels that sense ultraviolet light or infrared light are arranged together. For example, the image sensor includes a plurality of first pixels and a plurality of second pixels that are different in size. A width of each of the plurality of second pixels in a horizontal direction is a first integer multiple of a width of each of the plurality of first pixels in the horizontal direction, and a width of each of the plurality of second pixels in a vertical direction is a second integer multiple of a width of each of the plurality of first pixels in the vertical direction. The image sensor enables the pixels sensing ultraviolet light or infrared light, which have different sizes from the pixels sensing visible light, to be efficiently arranged together with the pixels sensing visible light, on the same substrate.

Abstract: High electron mobility transistors (HEMT) exhibiting dual depletion and methods of manufacturing the same. The HEMT includes a source electrode, a gate electrode and a drain electrode disposed on a plurality of semiconductor layers having different polarities. A dual depletion region exists between the source electrode and the drain electrode. The plurality of semiconductor layers includes an upper material layer, an intermediate material layer and a lower material layer, and a polarity of the intermediate material layer is different from polarities of the upper material layer and the lower material layer.

Abstract: An image sensor includes a semiconductor substrate, a first pair of photoelectric conversion regions in a first pixel region of the substrate and a first isolation structure between the photoelectric conversion regions of the first pair of photoelectric conversion regions. The sensor further includes a second pair of photoelectric conversion regions in a second pixel region of the substrate adjacent the first pixel region and a second isolation structure between the photoelectric conversion regions of the second pair of photoelectric conversion regions and having different optical properties than the first isolation structure. First and second different color filters (e.g.

Abstract: According to example embodiments, a high electron mobility transistor (HEMT) includes: stack including a buffer layer, a channel layer containing a two dimensional electron gas (2DEG) channel, and a channel supply layer sequentially stacked on each other, the stack defining a first hole and a second hole that are spaced apart from each other. A first electrode, a second electrode, and third electrode are spaced apart from each other along a first surface of the channel supply layer. A first pad is on the buffer layer and extends through the first hole of the stack to the first electrode. A second pad is on the buffer layer and extends through the second hole of the stack to the second electrode. A third pad is under the stack and electrically connected to the third electrode.

Abstract: An auto-focus image sensor includes a substrate including unit pixels and having first and second surfaces facing each other, a pixel separation part passing through the substrate from the first surface to the second surface and separating the unit pixels from each other, at least one pair of photoelectric conversion parts provided in each of the unit pixels of the substrate, and a sub-pixel separation part provided in the substrate and interposed between the at least one pair of the photoelectric conversion parts. The second surface serves as a light-receiving surface.

Abstract: An image sensor includes a two-dimensional array of image sensor pixels, which are formed in a semiconductor layer. Each image sensor pixel is formed in a substrate having a corresponding semiconductor region therein. Each semiconductor region contains at least first and second photoelectric conversion elements, which are disposed at side-by-side locations therein. An electrically insulating isolation region is also provided, which extends at least partially through the semiconductor region and at least partially between the first and second photoelectric conversion elements, which may be configured respectively as first and second semiconductor regions of first conductivity type (e.g., N-type). At least one optically reflective region is also provided, which extends at least partially through the semiconductor region and surrounds at least a portion of at least one of the first and second photoelectric conversion elements. A semiconductor floating diffusion (FD) region (e.g.

Abstract: Field effect semiconductor devices and methods of manufacturing the same are provided, the field effect semiconductor devices include a second semiconductor layer on a first surface of a first semiconductor layer, a first and a second third semiconductor layer respectively on two sides of the second semiconductor layer, a source and a drain respectively on the first and second third semiconductor layer, and a gate electrode on a second surface of the first semiconductor layer.

Abstract: High electron mobility transistors (HEMTs) including lightly doped drain (LDD) regions and methods of manufacturing the same. A HEMT includes a source, a drain, a gate, a channel supplying layer for forming at least a 2-dimensional electron gas (2DEG) channel, and a channel formation layer in which at least the 2DEG channel is formed. The channel supplying layer includes a plurality of semiconductor layers having different polarizabilities. A portion of the channel supplying layer is recessed. One of the plurality of semiconductor layers, which is positioned below an uppermost layer is an etching buffer layer, as well as a channel supplying layer.

Abstract: An image sensor includes a substrate including unit pixels. Each of the unit pixels includes photoelectric conversion elements and storage diodes.

Abstract: The methods may include forming a first material layer on a substrate, increasing electric resistance of the first material layer, and forming a source pattern and a drain pattern, which are spaced apart from each other, on the first material layer, a band gap of the source and drain patterns greater than a band gap of a first material layer.

Abstract: A unit pixel of an image sensor which operates in global shutter mode is provided. The unit pixel includes a photo diode area including a photo diode configured to accumulate photocharges generated from incident light during a first period and a storage diode area including a storage diode configured to receive and store the photocharges from the photo diode. The photo diode corresponds to a micro lens that focuses the incident light.