Patents by Inventor Hyun Ho Shin

Hyun Ho Shin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10665393
    Abstract: A capacitor includes a support member included in a body, a plurality of pillars disposed in an upper portion of the support member and each having a lower portion wider than an upper portion, and a capacitor layer disposed on a side surface and an upper surface of each pillar and including a dielectric layer and first and second electrodes alternately disposed with the dielectric layer interposed therebetween. Lower end portions of adjacent pillars are in contact with each other.
    Type: Grant
    Filed: September 19, 2017
    Date of Patent: May 26, 2020
    Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Jeong Hoon Ryou, Dong Sik Yoo, Seung Hun Han, No Il Park, Seung Mo Lim, Hyun Ho Shin
  • Patent number: 10573270
    Abstract: According to various exemplary embodiments, an electronic device may include: a camera unit; a processor; and a data processing unit that is electrically connected to the camera unit and the processor, wherein the data processing unit may detect a first number of pixels corresponding to first illuminance data based on first pixel data received from the camera unit to transmit the first number of pixels to the camera unit, and may determine a brightness of a display corresponding to second illuminance data based on second pixel data received from the camera unit in which a sensor corresponding to the first number of pixels is turned on.
    Type: Grant
    Filed: January 30, 2018
    Date of Patent: February 25, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jeong-Gyu Jo, Seung-Goo Kang, Jin-Hwan Seo, Hyun-Ho Shin, Bo-Kyung Sim, Dong-Il Son
  • Publication number: 20190382591
    Abstract: An ultra-high solids content primer coating composition comprising: (i) 5.0 to 50 wt % of at least one bisphenol F epoxy resin; (ii) 1.5 to 12 wt % of at least one silane; (iii) 0 to 20 wt % of at least one hydrocarbon resin; (iv) 0 to 15 wt % of at least one reactive diluent; (v) at least one curing agent; wherein said composition has a solids content of at least 90 wt % according to ASTM D5201-05; wherein said composition has a viscosity of 200 to 800 cps at 23° C. and 50% RH (ASTM D4287); and wherein the ratio between hydrogen equivalents in the curing agent and epoxy equivalents of the coating composition is in the range 50:100 to 120:100.
    Type: Application
    Filed: September 8, 2017
    Publication date: December 19, 2019
    Applicant: JOTUN A/S
    Inventors: Ku-sik JUNG, Hyun-ho SHIN, Erik RISBERG
  • Patent number: 10490356
    Abstract: A capacitor includes a body including a substrate and a capacitance layer disposed on the substrate. The substrate includes a plurality of first trenches penetrating from one surface of the substrate to an interior of the substrate, and a first capacitor layer disposed on the one surface of the substrate and in the first trenches. The first capacitor layer includes a first dielectric layer and first and second electrodes disposed on opposing sides thereof. The capacitance layer includes a plurality of second trenches penetrating from one surface of the capacitance layer to an interior of the capacitance layer, and a second capacitor layer disposed on the one surface of the capacitance layer and in the second trenches. The second capacitor layer includes a second dielectric layer and third and fourth electrodes disposed on opposing sides thereof. A method of manufacturing the capacitor is also provided.
    Type: Grant
    Filed: September 22, 2017
    Date of Patent: November 26, 2019
    Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Jeong Hoon Ryou, Dong Sik Yoo, Seung Hun Han, No Il Park, Seung Mo Lim, Hyun Ho Shin
  • Patent number: 10468187
    Abstract: A thin-film ceramic capacitor includes a body in which dielectric layers and first and second electrode layers are alternately disposed on a substrate, and first and second electrode pads disposed on external surfaces of the body. A plurality of vias are disposed in the body. Each of a plurality of first vias connects the first electrode layers and the first electrode pad to each other. Each of a plurality of second vias connects the second electrode layers and the second electrode pad to each other. A separation slit is disposed to penetrate from an upper surface of the body and extend to the substrate, and the pluralities of first and second vias are disposed symmetrically with respect to the separation slit.
    Type: Grant
    Filed: June 13, 2017
    Date of Patent: November 5, 2019
    Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Hyun Ho Shin, Woong Do Jung, Young Seok Yoon, Dong Sik Yoo, No Il Park, Seung Mo Lim, Il Ro Lee
  • Publication number: 20190295772
    Abstract: A thin-film ceramic capacitor includes a body in which dielectric layers and first and second electrode layers are alternately disposed on a substrate, and first and second electrode pads disposed on external surfaces of the body. A plurality of vias are disposed in the body. Each of a plurality of first vias connects the first electrode layers and the first electrode pad to each other. Each of a plurality of second vias connects the second electrode layers and the second electrode pad to each other. A separation slit is disposed to penetrate from an upper surface of the body and extend to the substrate, and the pluralities of first and second vias are disposed symmetrically with respect to the separation slit.
    Type: Application
    Filed: June 10, 2019
    Publication date: September 26, 2019
    Inventors: Hyun Ho SHIN, Woong Do JUNG, Young Seok YOON, Dong Sik YOO, No Il PARK, Seung Mo LIM, Il Ro LEE
  • Patent number: 10418179
    Abstract: A multilayer thin-film capacitor includes a multilayer body in which a plurality of dielectric layers and first and second internal electrode layers are alternately stacked, and first and second external electrodes are disposed on the multilayer body and connected to the first and second internal electrode layers, respectively. The multilayer thin-film capacitor may include a first edge via connected to the external electrode and disposed at or adjacent at least one edge of an upper surface of the multilayer body, and a second edge via connected to the second external electrode and disposed at or adjacent at least one edge of the upper surface of the multilayer body.
    Type: Grant
    Filed: August 14, 2017
    Date of Patent: September 17, 2019
    Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: No Il Park, Pil Joong Kang, Seung Mo Lim, Hyun Ho Shin
  • Patent number: 10410793
    Abstract: A thin film capacitor includes: a body formed by alternately stacking first and second electrode layers, with dielectric layers therebetween on a substrate. A plurality of first vias are disposed in the body and electrically connected to the first electrode layers. A plurality of second vias are disposed in the body, electrically connected to the second electrode layers, and disposed alternately with the first vias. A first connection electrode is disposed on an upper surface of the body and connected to the plurality of first vias, a second connection electrode is disposed on the upper surface of the body and connected to the plurality of second vias, and first and second electrode pads are disposed on the first and second connection electrodes, respectively, and formed to not overlap the plurality of first and second vias.
    Type: Grant
    Filed: January 12, 2017
    Date of Patent: September 10, 2019
    Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Seung Mo Lim, Hyun Ho Shin, Sang Jong Lee, Yun Sung Kang, Woong Do Jung, Sung Sun Kim
  • Patent number: 10381337
    Abstract: A capacitor includes a plurality of cells each including a capacitance formation portion in which a plurality of trenches are positioned and a margin portion disposed around the capacitance formation portion. The cell includes three or more dielectric layers disposed in the capacitance formation portion and extending in the trenches, and three or more electrode layers sequentially stacked with dielectric layers interposed therebetween and extending in the trenches. At least first and second electrode layers have opposite polarities and each include a lead electrode extending from the capacitance formation portion to the margin portion. A lead electrode of the first electrode layer is disposed in a first region disposed to one side of a central portion of a cell, and a lead electrode of the second electrode layer is disposed in a second region disposed on another side of a central portion of the cell.
    Type: Grant
    Filed: December 4, 2017
    Date of Patent: August 13, 2019
    Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Hyun Ho Shin, Woong Do Jung, Jong Suk Han, Dong Sik Yoo, Jeong Hoon Ryou, No Il Park, Seung Mo Lim, Il Ro Lee
  • Patent number: 10332682
    Abstract: A thin-film capacitor includes a body in which a plurality of dielectric layers and first and second electrode layers are alternately stacked on a substrate, first and second electrode pads are on external surfaces of the body, and a plurality of vias are within the body. Among the plurality of vias, a first via connects the first electrode layer and the first electrode pad, and a second via connects the second electrode layer and the second electrode pad. The first via and the second via are units each include a plurality of vias, and the first via unit and the second via unit are alternately disposed on an upper surface of the body.
    Type: Grant
    Filed: April 5, 2017
    Date of Patent: June 25, 2019
    Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Hyun Ho Shin, Su Bong Jang, Seung Mo Lim, Sang Jong Lee
  • Patent number: 10319526
    Abstract: A thin-film capacitor includes a body having a plurality of dielectric layers and first and second electrode layers alternately stacked on a substrate, first and second electrode pads disposed on one surface of the body, a plurality of vias having a multistage shape being disposed in the body, a first via of the plurality of vias connects the first electrode layer to the first electrode pad, and penetrates from the surface of the body to a first lowermost electrode layer adjacent the substrate, a second via of the plurality of vias connects the second electrode layer to the second electrode pad, and penetrates from the surface of the body to a second lowermost electrode layer adjacent the substrate and an upper surface of the first electrode layer is exposed in the first via, and an upper surface of the second electrode layer is exposed in the second via.
    Type: Grant
    Filed: July 10, 2017
    Date of Patent: June 11, 2019
    Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Hyun Ho Shin, Yun Sung Kang, Seung Mo Lim, Kyo Yeol Lee, Dong Joon Oh, Woong Do Jung, Ho Phil Jung, Hai Joon Lee
  • Patent number: 10297389
    Abstract: A thin-film capacitor includes a body in which a plurality of dielectric layers and first and second electrode layers are alternately disposed on a substrate and first and second electrode pads disposed on external surfaces of the body, wherein a plurality of vias are disposed within the body, and the plurality of vias includes a first via electronically connects the first electrode layer and the first electrode pad and penetrates through from one surface of the body to a lowermost first electrode layer adjacent to the substrate; and a second via electronically connects the second electrode layer and the second electrode pad and penetrates through from one surface of the body to a lowermost second electrode layer adjacent to the substrate. The plurality of vias has a multi-stage shape, and a top view of each of the plurality of vias is asymmetric in shape.
    Type: Grant
    Filed: April 12, 2017
    Date of Patent: May 21, 2019
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Hyun Ho Shin, Seung Mo Lim
  • Publication number: 20190096587
    Abstract: A capacitor includes a structure including a plurality of openings penetrating from a first surface of the structure to a second surface opposing the first surface; a capacitor layer disposed on the second surface of the structure and in the plurality of the openings and including a dielectric layer, and a first electrode and a second electrode, the dielectric layer interposed between the first electrode and the second electrode; a first connection layer disposed on the first surface of the structure and connected to the first electrode; a second connection layer disposed on the capacitor layer on the second surface and connected to the second electrode of the structure; and first and second terminals disposed on opposite side surfaces of the structure and connected to the first connection layer and the second connection layer, respectively.
    Type: Application
    Filed: June 11, 2018
    Publication date: March 28, 2019
    Inventors: Hyun Ho SHIN, Jeong Hoon RYOU, Dong Sik YOO, No Il PARK, Chang Soo JANG, Young Kyu PARK
  • Publication number: 20190088419
    Abstract: A capacitor component includes a porous body, a first electrode layer covering surfaces of pores of the porous body, a dielectric layer covering the first electrode layer, and a second electrode layer filling the pores of the porous body and covering the dielectric layer.
    Type: Application
    Filed: April 24, 2018
    Publication date: March 21, 2019
    Inventors: Jeong Hoon RYOU, Hyun Ho SHIN, Byeong Cheol MOON, Chang Soo JANG, Tae Joon PARK, Yun Hee KIM, Kyo Yeol LEE, Seung Mo LIM
  • Patent number: 10229789
    Abstract: A multilayer thin-film capacitor includes a first multilayer body and a second multilayer body spaced apart from each other in a vertical direction by a split layer. The second multilayer body is disposed on a lower surface of the first multilayer body, the first multilayer body constitutes a top capacitor, and the second body constitutes a bottom capacitor. First, second, and third external terminals may be disposed on an upper surface of the first multilayer body and be connected to internal electrode layers of the first and second multilayer bodies.
    Type: Grant
    Filed: April 21, 2017
    Date of Patent: March 12, 2019
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: No Il Park, Hyun Ho Shin, Seung Mo Lim, Dong Sik Yoo
  • Patent number: 10199167
    Abstract: A thin-film ceramic capacitor includes a body, a plurality of dielectric layers and first and second electrode layers alternately disposed on a substrate in the body, first and second electrode pads disposed on an external surface of the body, and a plurality of vias disposed in the body, the plurality of dielectric layers and first and second electrode layers having inclined etched surfaces exposed to the plurality of vias, a first via, of the plurality of vias, being connected to the inclined surface of the first electrode layer, and a second via, of the plurality of vias, being connected to the inclined surface of the second electrode layer.
    Type: Grant
    Filed: July 5, 2017
    Date of Patent: February 5, 2019
    Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Seung Hun Han, Sung Min Cho, Tae Joon Park, Hyun Ho Shin, Sang Kee Yoon
  • Patent number: 10199166
    Abstract: A capacitor includes: a substrate including a plurality of trenches and a capacitance formation portion, and a margin portion disposed around the capacitance formation portion; dielectric layers disposed on one surface of the substrate and filling the trenches; a plurality of first electrode layers each disposed on one surface of the dielectric layer and each including a first lead portion led out from the capacitance formation portion to the margin portion; and a plurality of second electrode layers each disposed on one surface of the dielectric layer to face the first electrode layer with each of the dielectric layers interposed therebetween, and each including a second lead portion led out from the capacitance formation portion to the margin portion, wherein the first and second lead portions of the plurality of first and second electrode layers are stacked in a stepped shape inclined in a direction from the margin portion to the capacitance formation portion.
    Type: Grant
    Filed: November 7, 2017
    Date of Patent: February 5, 2019
    Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: No Il Park, Byeong Cheol Moon, Il Ro Lee, Hyun Ho Shin, Seung Mo Lim, In Young Kang
  • Publication number: 20190019787
    Abstract: A capacitor includes a body including a substrate having first and second capacitor regions, and first to third terminal electrodes disposed on an external surface of the body. The first capacitor region includes a plurality of first trenches, and a first capacitor layer disposed on one surface of the substrate and in the first trenches in the first capacitor region and including at least one first dielectric layer and first and second electrodes disposed with the at least one first dielectric layer interposed therebetween. The second capacitor region includes a plurality of second trenches, and a second capacitor layer disposed on one surface of the substrate and the second trenches in the second capacitor region and including at least one second dielectric layer and third and fourth electrodes disposed with the at least one second dielectric layer interposed therebetween. The second capacitor layer has a specific surface area greater than that of the first capacitor layer.
    Type: Application
    Filed: December 19, 2017
    Publication date: January 17, 2019
    Inventors: No Il PARK, In Young KANG, Hyun Ho SHIN, Seung Mo LIM, Jeong Hoon RYOU
  • Patent number: 10181461
    Abstract: A capacitor includes a body including a substrate having first and second capacitor regions, and first to third terminal electrodes disposed on an external surface of the body. The first capacitor region includes a plurality of first trenches, and a first capacitor layer disposed on one surface of the substrate and in the first trenches in the first capacitor region and including at least one first dielectric layer and first and second electrodes disposed with the at least one first dielectric layer interposed therebetween. The second capacitor region includes a plurality of second trenches, and a second capacitor layer disposed on one surface of the substrate and the second trenches in the second capacitor region and including at least one second dielectric layer and third and fourth electrodes disposed with the at least one second dielectric layer interposed therebetween. The second capacitor layer has a specific surface area greater than that of the first capacitor layer.
    Type: Grant
    Filed: December 19, 2017
    Date of Patent: January 15, 2019
    Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: No Il Park, In Young Kang, Hyun Ho Shin, Seung Mo Lim, Jeong Hoon Ryou
  • Publication number: 20180350790
    Abstract: A capacitor includes a plurality of cells each including a capacitance formation portion in which a plurality of trenches are positioned and a margin portion disposed around the capacitance formation portion. The cell includes three or more dielectric layers disposed in the capacitance formation portion and extending in the trenches, and three or more electrode layers sequentially stacked with dielectric layers interposed therebetween and extending in the trenches. At least first and second electrode layers have opposite polarities and each include a lead electrode extending from the capacitance formation portion to the margin portion. A lead electrode of the first electrode layer is disposed in a first region disposed to one side of a central portion of a cell, and a lead electrode of the second electrode layer is disposed in a second region disposed on another side of a central portion of the cell.
    Type: Application
    Filed: December 4, 2017
    Publication date: December 6, 2018
    Inventors: Hyun Ho SHIN, Woong Do JUNG, Jong Suk HAN, Dong Sik YOO, Jeong Hoon RYOU, No IL PARK, Seung Mo LIM, IL Ro LEE