Abstract: Provided is a method of configuring a feedback zone in an uplink zone of a frame. This method is for transmitting feedback data in a wireless communication system. The method sets the feedback zone between a relay station (RS) and a mobile station (MS) in addition to a feedback zone between the MS and a base station (BS), thereby preventing a transmission delay of the feedback data incurred by the RS.

Abstract: A method of crystallizing amorphous silicon comprises forming an amorphous silicon layer on a substrate; forming an insulating layer on the amorphous silicon layer; forming a heat distributing metal layer on the insulating layer; and forming a thermite layer on the heat distributing metal layer. Ignition heat is then applied to ignite the thermite layer and generate sufficient localized exothermic heat from the ignited thermite layer so as to crystallize the amorphous silicon layer. The substrate beneath the amorphous silicon layer can be a heat sensitive substrate which is not substantially deformed by the localized crystallizing heat applied to the top portion of the amorphous silicon layer by way of the heat distributing metal layer and the insulating layer.

Abstract: The present invention relates to an apparatus and method for variable fast Fourier transform. According to an embodiment of the present invention, two n-point fast Fourier transform (FFT) processors are used to generate two n-point FFT output data or one 2n-point FFT output data. The one 2n-point input data is alternately input to the two n-point FFT processors. Each of the two n-point FFT processors selects a twiddle factor for the n-point input data or the 2n-point input data and performs fast Fourier transform. A butterfly operation is performed on signals obtained by performing fast Fourier transform on the 2n-point input data signal, and the processed signals are aligned in an output order. According to this structure, it is possible to realize a fast Fourier transform hardware engine that selectively performs multi-frequency allocation in a base station system that supports the multi-frequency allocation.

Abstract: Provided is a method and apparatus for determining timing for initial ranging of user equipment by using ranging of adjacent pieces of user equipment in a multi-hop mobile relay (MMR) system, and more particularly, a method and apparatus for determining timing for initial ranging of user equipment in which a power value and a timing value for periodic ranging of adjacent pieces of user equipment are measured so as to minimize an uplink timing error of abase station. In the MMR system, user equipment transmits an initial ranging code to the base station with irregular timing while not knowing an exact start point of an uplink of the base station.

Abstract: A thin film transistor and a liquid crystal display, in which a gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed.

Abstract: An air circuit breaker is provided wherein a rotational force is accurately discontinued at a movement completion time of assuming a connected position, a test position or a disconnected position by a breaker body in the process of withdrawing in and withdrawing out the breaker body from a cradle whereas a driving connection is performed if necessary, the breaker including a coupling device capable of being moved to a position where a withdraw-in and withdraw-out driving force generated by a manipulating handle is transmitted to a withdraw in and withdraw out apparatus and to a position where the withdraw-in and withdraw-out driving force is stopped of transmission.

Abstract: The present invention relates to a thin film transistor and a liquid crystal display. A gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed.

Abstract: An analog buffer, display device having the same and a method of driving the same are provided. The analog buffer applies an analog voltage to a load. The analog buffer includes a comparator and a transistor. The comparator is configured to compare an input voltage provided from an external device with the analog voltage applied to the load. The transistor is turned on to electrically charge the load when the analog voltage is lower than the input voltage or turned on to electrically discharge the load when the analog voltage is higher than the input voltage, and turned off when the analog voltage becomes substantially the same as the input voltage.

Abstract: A mask for crystallization of amorphous silicon to polysilicon is provided. The mask includes a plurality of slit patterns for defining regions to be illuminated. The plurality of slit patterns are formed along a longitudinal first direction and the mask moves along a longitudinal second direction. The first longitudinal direction is substantially perpendicular to the second longitudinal direction. Each of the split patterns is deviated apart by substantially a same distance from another. Thus, the polysilicon using the mask.

Abstract: Disclosed is a draw in-out apparatus that is suitable for an air circuit breaker having large capacity and size, the apparatus comprising: a movable plate meshed with the thread portion of a spindle so as to be movable back and forth; rack gear installed on the movable plate so as to be movable back and forth along with the movable plate moving back and forth; pinion gear installed to be meshed with the rack gear and rotatable according to the rack gear moving back and forth; a cam rotatable by a rotational driving force transferred from the pinion gear by being provided with a teeth portion meshed with the pinion gear and having a radius larger than those of the pinion gear so as to amplify a torque transferred from the pinion gear and provided with a cam slot portion for enduring a load of the main body and a reaction force generated when the main body and the cradle are electrically connected to each other while the main body is moved to a connected position; a pivot disposed on the cradle at a position ad

Abstract: Provided is a flexible electrophoretic display. The flexible electrophoretic display includes a grayscale representation unit for representing grayscales in unit areas using reflection and transmission; upper and lower electrodes for applying a voltage to the grayscale representation unit; and a plurality of colored particles formed on the upper electrode for representing color. The upper electrode is formed of a transparent conductive material. External incident light is reflected by the colored particles formed on the upper electrode for color implementation by the flexible electrophoretic display. Thus, a compact, flexible electrophoretic display capable of displaying a high-definition image with multi-color and multi-gradation can be implemented by using multi-colored particle layers formed of metallic nano-particles.

Abstract: An air circuit breaker is provided wherein a rotational force is accurately discontinued at a movement completion time of assuming a connected position, a test position or a disconnected position by a breaker body in the process of withdrawing in and withdrawing out the breaker body from a cradle whereas a driving connection is performed if necessary, the breaker including a coupling device capable of being moved to a position where a withdraw-in and withdraw-out driving force generated by a manipulating handle is transmitted to a withdraw in and withdraw out apparatus and to a position where the withdraw-in and withdraw-out driving force is stopped of transmission.

Abstract: A mask for crystallization of amorphous silicon to polysilicon is provided. The mask includes a plurality of slit patterns for defining regions to be illuminated. The plurality of slit patterns are formed along a longitudinal first direction and the mask moves along a longitudinal second direction. The first longitudinal direction is substantially perpendicular to the second longitudinal direction. Each of the split patterns is deviated apart by substantially a same distance from another.

Abstract: A method for avoiding a polysilicon defect includes: forming a silicon oxide layer on a silicon substrate; forming a polysilicon plug in the silicon oxide layer, with the polysilicon plug going through the silicon oxide layer; forming on the silicon oxide layer a silicon nitride layer covering the polysilicon plug; forming interlayer dielectric layers on the silicon nitride layer; etching the interlayer dielectric layers over the polysilicon plug to form an opening; etching the silicon nitride layer at the opening to expose the polysilicon plug; and filling polysilicon into the opening such that the opening is in communication with polysilicon plug. In this way, there will be no reaction of the HSC1 with the polysilicon plug due to the protection by the silicon nitride layer. Moreover, since the silicon nitride layer is the last to be etched, there will be no residual thereof, enabling a subsequent flat filling.

Abstract: A method of manufacturing a thin film transistor array panel is provided, which includes: depositing an amorphous silicon layer on an insulating substrate; converting the amorphous silicon layer to a polysilicon layer by a plurality of laser shots using a mask; forming a gate insulating layer on the polysilicon layer; forming a plurality of gate lines on the gate insulating layer; forming a first interlayer insulating layer on the gate lines; forming a plurality of data lines on the first interlayer insulating layer; forming a second interlayer insulating layer on the data lines; and forming a plurality of pixel electrodes on the second interlayer insulating layer, wherein the mask comprises a plurality of transmitting areas and a plurality of blocking areas arranged in a mixed manner.

Abstract: Disclosed therein are a conductor base and a finger module of an air circuit breaker. Since the connector of the conductor base has the curved surface formed on a side of an end portion thereof and tooth-coupled with the contactor of the finger module, the contactor of the finger module has another curved surface corresponding to the curved surface of the connector and the contactor is elastically supported in a vertical direction by the plate spring to allow both end portions of the contactor to perform a vertical elastic movement relative to a longitudinal center of the contactor, the present invention can prevent damages due to a mechanical impact between the connector of the conductor base and the contactor of the finger module, which may occur while the breaker terminal is inserted into the finger module, to thereby extend the lifespan of the conductor base and the finger module.

Abstract: A nonvolatile memory device includes a string selection gate and a ground selection gate on a semiconductor substrate, and a plurality of memory cell gates on the substrate between the string selection gate and the ground selection gate. First impurity regions extend into the substrate to a first depth between ones of the plurality of memory cell gates. Second impurity regions extend into the substrate to a second depth that is greater than the first depth between the string selection gate and a first one of the plurality of memory cell gates immediately adjacent thereto, and between the ground selection gate and a last one of the plurality of memory cell gates immediately adjacent thereto. Related fabrication methods are also discussed.

Abstract: A device for irradiating a laser beam onto an amorphous silicon thin film formed on a substrate. The device includes: a stage mounting the substrate; a laser oscillator for generating a laser beam; a projection lens for focusing and guiding the laser beam onto the thin film; a reflector for reflecting the laser beam guided onto the thin film; a controller for controlling a position of the reflector; and an absorber for absorbing the laser beam reflected by the reflector.

Abstract: A mask for crystallization of amorphous silicon to polysilicon is provided. The mask includes a plurality of slit patterns for defining regions to be illuminated. The plurality of slit patterns are formed along a longitudinal first direction and the mask moves along a longitudinal second direction. The first longitudinal direction is substantially perpendicular to the second longitudinal direction. Each of the split patterns is deviated apart by substantially a same distance from another. Thus, the polysilicon using the mask are grown to be isotropic with respect to the horizontal and vertical directions.

Abstract: A method of manufacturing a thin film transistor array panel is provided, which includes: depositing an amorphous silicon layer on an insulating substrate; converting the amorphous silicon layer to a polysilicon layer by a plurality of laser shots using a mask; forming a gate insulating layer on the polysilicon layer; forming a plurality of gate lines on the gate insulating layer; forming a first interlayer insulating layer on the gate lines; forming a plurality of data lines on the first interlayer insulating layer; forming a second interlayer insulating layer on the data lines; and forming a plurality of pixel electrodes on the second interlayer insulating layer, wherein the mask comprises a plurality of transmitting areas and a plurality of blocking areas arranged in a mixed manner.