Abstract: The present disclosure relates to a nanostructure for detecting viruses including an amphipathic polymer, and a diagnostic platform using the same, wherein the nanostructure is capable of specifically detecting viruses through silica-based nanoparticles with excellent stability and high dispersion and a biocompatible amphipathic polymer, such that it is possible to develop a diagnostic platform with high sensitivity through binding and agglomeration of the nanostructure and viruses and enable rapid and accurate diagnosis of a target virus.

Abstract: A pouch type all-solid-state battery including a reference electrode is disclosed. In the all-solid-state battery, a potential variation of each electrode is accurately measured because the ion transfer path between the reference electrode and a positive electrode/negative electrode is short. Accordingly, the all-solid-state battery secures a desired cell performance while having battery specifications similar to actual battery specifications.

Abstract: A picture generation apparatus and a control method thereof are disclosed. An embodiment of the present disclosure provides a picture generation apparatus including a light source; a Spatial Light Modulator (SLM) configured to output an image using light transmitted from the light source; and a control unit configured to control the light source and the SLM based on at least one of illuminance of the surroundings or content of the image.

Abstract: A storage device including a non-volatile memory device which receives an operating command and performs an operation corresponding to the operating command, a voltage generating circuit which generates an operating voltage according to the operating command, and a flag generating circuit which receives a busy signal indicative of the non-volatile memory device performing the operation and a pump enable signal instructing pumping of the operating voltage, and outputs a flag signal based on the busy signal and the pump enable signal. The busy signal has a first level when the non-volatile memory device performs the operation, and the flag signal transitions from a second level to the first level in response to the operating voltage becoming equal to or higher than a first reference voltage while the busy signal is at the first level.

Abstract: A method of manufacturing a multilayer metal plate by electroplating includes a first forming operation of forming one of a first metal layer and a second metal layer on a substrate by electroplating, wherein the second metal layer is less recrystallized than the first metal layer, the second metal layer is comprised of nanometer-size grains, and the second metal layer has a higher level of tensile strength than the first metal layer; and a second forming operation of forming, by electroplating, a third metal layer not formed in the first forming operation on a surface of one of the first metal layer and the second metal layer formed in the first forming operation.

Abstract: Provided a voltage generating circuits including assist circuits and operating methods thereof. The voltage generating circuit which includes an assist circuit that generates an assist signal indicating an enable mode or a disable mode. When a first power supply voltage is lower than an assist reference voltage, the assist signal indicates the enable mode, and a compensation circuit generates a compensation signal based on the first power supply voltage. An internal voltage converter generates a regulated voltage based on the first power supply voltage, and a charge pump circuit generates a pump voltage based on the regulated voltage. The compensation signal compensates for the regulated voltage.

Abstract: A non-volatile memory device is provided. The non-volatile memory device may include a memory cell array, a first pumping circuit configured to output a first pumping voltage, a second pumping circuit configured to pump the first pumping voltage of the first pumping circuit to output a second pumping voltage, and a pumping circuit control unit which is connected to the first pumping circuit and the second pumping circuit and configured to output at least one of the first pumping voltage and the second pumping voltage to the memory cell array. The first pumping circuit may be enabled in a first mode and a second mode different from the first mode, and the second pumping circuit may be disabled or not enabled in the first mode and enabled in the second mode.

Abstract: The present disclosure relates to a composition containing extracellular vesicles isolated from skeletal muscle-derived stem cells as active ingredients, which exhibits the effect of skin aging delay, wound healing, scar reduction and skin whitening, thereby improving skin condition. The present disclosure can not only utilize tissues wasted after surgical operation, thus allowing easy supply of raw materials, but also takes advantage of natural substances, thereby being free from the risk of side effects even upon long-term administration. The composition of the present disclosure promotes the secretion of collagen, reduces reactive oxygen species and promotes re-epithelialization at wound site while remarkably inhibiting melanocyte proliferation, tyrosinase activity and melanogenesis. Accordingly, it can facilitate effective recovery from skin tissue damage caused by oxidative stress, physical wound, intrinsic aging at cell or tissue levels, or hyperpigmentation.

Abstract: A storage device including a non-volatile memory device which receives an operating command and performs an operation corresponding to the operating command, a voltage generating circuit which generates an operating voltage according to the operating command, and a flag generating circuit which receives a busy signal indicative of the non-volatile memory device performing the operation and a pump enable signal instructing pumping of the operating voltage, and outputs a flag signal based on the busy signal and the pump enable signal. The busy signal has a first level when the non-volatile memory device performs the operation, and the flag signal transitions from a second level to the first level in response to the operating voltage becoming equal to or higher than a first reference voltage while the busy signal is at the first level.

Abstract: Provided a voltage generating circuits including assist circuits and operating methods thereof. The voltage generating circuit which includes an assist circuit that generates an assist signal indicating an enable mode or a disable mode. When a first power supply voltage is lower than an assist reference voltage, the assist signal indicates the enable mode, and a compensation circuit generates a compensation signal based on the first power supply voltage. An internal voltage converter generates a regulated voltage based on the first power supply voltage, and a charge pump circuit generates a pump voltage based on the regulated voltage. The compensation signal compensates for the regulated voltage.

Abstract: Melanophilin (MLPH) of the present invention is involved in differentiation into an adipocyte or fat accumulation, and accordingly, obesity can be treated or prevented by inhibiting the MLPH. Further, by measuring an expression level of the MLPH, obesity can be diagnosed and treated, and therapeutic agents for obesity and agents regulating differentiation into adipocytes can be screened.

Abstract: A nonvolatile memory device includes a memory cell array including a plurality of memory cells that are programmed based on a high voltage, a high voltage generator to generate the high voltage by boosting an input voltage based on a pumping clock, a pumping clock generator to generate the pumping clock, a high voltage detector to generate a detection signal by comparing an adjustment voltage with a reference voltage, a programming current controller to adjust a programming current flowing through each of selected memory cells of the plurality of memory cells; and a control logic to adjust a frequency of the pumping clock and a current driving capability of the programming current based on the detection signal during a programming period with respect to the selected memory cells. The detection signal includes information indicating whether the high voltage reaches to a target voltage.

Abstract: A nonvolatile memory device includes a memory cell array including a main memory area and a dummy memory area, a row decoder, a bit line selection circuit, a data input/output circuit, a control circuit, and a voltage generator. The bit line selection circuit is configured to select a first main bit line during a program time and is configured to select a dummy bit line during a column address switch time. During the column address switch time, a second main bit line is selected. The voltage generator is configured to output, to the row decoder, a source line voltage to be applied to a selected source line during the program time and during the column address switch time, wherein the source line voltage is maintained at a voltage level during the program time and during the column address switch time.

Abstract: The present invention relates to a dispersion plate and a coating device comprising the same, which provides a dispersion plate comprising a plurality of gas injection holes, wherein the dispersion plate includes a plurality of spout nozzles formed by a dense arrangement of the gas injection holes, wherein one spout nozzle is disposed at the center of the dispersion plate and the plurality of spout nozzles are arranged along a plurality of virtual concentric circles from the center of the dispersion plate to the edge of the dispersion plate, where with respect to two adjacent virtual concentric circles, the number of spout nozzles arranged along an outer concentric circle based on the center of the dispersion plate is twice the number of spout nozzles arranged along an inner concentric circle and the arrangement interval of the spout nozzles arranged along the outer concentric circle is half the arrangement interval of the spout nozzles arranged along the inner concentric circle.

Abstract: A nonvolatile memory device includes a memory cell array including a main memory area and a dummy memory area, a row decoder, a bit line selection circuit, a data input/output circuit, a control circuit, and a voltage generator. The bit line selection circuit is configured to select a first main bit line during a program time and is configured to select a dummy bit line during a column address switch time. During the column address switch time, a second main bit line is selected. The voltage generator is configured to output, to the row decoder, a source line voltage to be applied to a selected source line during the program time and during the column address switch time, wherein the source line voltage is maintained at a voltage level during the program time and during the column address switch time.

Abstract: A nonvolatile memory device includes a memory cell array including a plurality of memory cells that are programmed based on a high voltage, a high voltage generator to generate the high voltage by boosting an input voltage based on a pumping clock, a pumping clock generator to generate the pumping clock, a high voltage detector to generate a detection signal by comparing an adjustment voltage with a reference voltage, a programming current controller to adjust a programming current flowing through each of selected memory cells of the plurality of memory cells; and a control logic to adjust a frequency of the pumping clock and a current driving capability of the programming current based on the detection signal during a programming period with respect to the selected memory cells. The detection signal includes information indicating whether the high voltage reaches to a target voltage.

Abstract: A sensing circuit of nonvolatile memory device includes a precharge current generator, an adjusting transistor, and an adaptive control voltage generator. The precharge current generator connected to a sensing node and generates a precharge current provided to a bit-line of the nonvolatile memory device, in response to a precharge signal. The adjusting transistor, connected between the sensing node and a first node, adjusts an amount of the precharge current provided to the bit-line in response to a first control voltage. The adaptive control voltage generator generates a control current proportional to an operating temperature, in response to the precharge signal and a second control voltage and boosts a level of the first control voltage in proportion to the operating temperature. The second control voltage is inversely proportional to the operating temperature.

Abstract: The present invention relates to an apparatus and a method for producing a polymer latex resin powder, and according to one aspect of the present invention, there is provided an apparatus for producing a polymer latex resin powder comprising a first flocculation tank to which a polymer latex and a flocculant are each supplied, wherein the first flocculation tank is provided with a stirring part including a rotation axis and one or more impellers mounted on the rotation axis, and a discharge line, and the first flocculation tank is configured to operate as a closed system upon operation of the stirring part.

Abstract: A sensing circuit of nonvolatile memory device includes a precharge current generator, an adjusting transistor, and an adaptive control voltage generator. The precharge current generator connected to a sensing node and generates a precharge current provided to a bit-line of the nonvolatile memory device, in response to a precharge signal. The adjusting transistor, connected between the sensing node and a first node, adjusts an amount of the precharge current provided to the bit-line in response to a first control voltage. The adaptive control voltage generator generates a control current proportional to an operating temperature, in response to the precharge signal and a second control voltage and boosts a level of the first control voltage in proportion to the operating temperature. The second control voltage is inversely proportional to the operating temperature.

Abstract: A mixer and a reactor including the same are provided. According to one aspect of the present invention, the mixer includes a first piping part into which a first fluid flows, an elbow piping part having an inlet connected to the first piping part and an outlet provided at a location rotated by a predetermined angle from the inlet in a flow direction of the first fluid to have a curved flow path, and a second piping part connected to the elbow piping part to have a central axis perpendicular to a central axis of the first piping part so that a second fluid flows in a tangential direction of the elbow piping part when the second fluid flows into the elbow piping part.