Abstract: A mixer and a reactor including the same are provided. According to one aspect of the present invention, the mixer includes a first piping part into which a first fluid flows, an elbow piping part having an inlet connected to the first piping part and an outlet provided at a location rotated by a predetermined angle from the inlet in a flow direction of the first fluid to have a curved flow path, and a second piping part connected to the elbow piping part to have a central axis perpendicular to a central axis of the first piping part so that a second fluid flows in a tangential direction of the elbow piping part when the second fluid flows into the elbow piping part.

Abstract: A semiconductor device is provided. The semiconductor device includes a stack structure comprising insulating patterns and electrode structures alternately stacked on a substrate, and a vertical channel structure vertically penetrating the stack structure. Each of the electrode structures includes a conductive pattern having a first sidewall and a second sidewall opposite to the first sidewall, a first etching prevention pattern on the first sidewall, and a second etching prevention pattern on the second sidewall.

Abstract: A semiconductor memory device includes a memory cell array including a plurality of memory cells connected to a plurality of bit lines, a control signal generating circuit configured to generate a first control signal in response to a first operating temperature of the semiconductor memory device and a second control signal in response to a second operating temperature of the semiconductor memory device, a precharge circuit configured to provide a precharge current to a first bit line of the plurality of bit lines in response to an enable signal, and a boost circuit configured to provide a boost current to the first bit line in response to the enable signal, wherein the magnitude of the boost circuit is responsive to one of the first and second control signals.

Abstract: A semiconductor memory device includes a memory cell array including a plurality of memory cells connected to a plurality of bit lines, a control signal generating circuit configured to generate a first control signal in response to a first operating temperature of the semiconductor memory device and a second control signal in response to a second operating temperature of the semiconductor memory device, a precharge circuit configured to provide a precharge current to a first bit line of the plurality of bit lines in response to an enable signal, and a boost circuit configured to provide a boost current to the first bit line in response to the enable signal, wherein the magnitude of the boost circuit is responsive to one of the first and second control signals.

Abstract: The present invention relates to a polymerization reactor. The polymerization reactor according to one aspect of the present invention comprises: a housing including a supply part for supplying a reactant; a tube which is provided inside the housing and extends along the height direction of the housing; a first impeller including a blade which spirally surrounds the tube along the height direction of the housing; a second impeller which is provided inside the housing in order to enable the reactant to flow into the tube; and a partition wall which is provided to surround the second impeller along the circumferential direction.

Abstract: The present invention relates to a pharmaceutical composition for preventing or treating cancer containing pleiotropic regulator 1 (PLRG1) inhibitor as an active ingredient, a method for treating cancer including administering the composition to a subject, a composition for diagnosing cancer containing an agent for measuring the expression level of PLRG1, a method for providing information for diagnosing cancer including measuring the expression level of PLRG1, and a method for screening agents for preventing or treating cancer. Pleiotropic regulator 1 (PLRG1) is overexpressed in cancer cells, and the inhibition of the expression of PLRG1 can induce cancer cell-specific apoptosis. Accordingly, the PLRG1 inhibitor of the present invention has an excellent effect as an anticancer agent without side effects, and additionally, the PLRG1 inhibitor can be used for cancer diagnosis, screening of anticancer agents, etc. by measuring the expression levels of PLRG1.

Abstract: Melanophilin (MLPH) of the present invention is involved in differentiation into an adipocyte or fat accumulation, and accordingly, obesity can be treated or prevented by inhibiting the MLPH. Further, by measuring an expression level of the MLPH, obesity can be diagnosed and treated, and therapeutic agents for obesity and agents regulating differentiation into adipocytes can be screened.

Abstract: A memory device includes a memory cell, a bit line connected to the memory cell, a control voltage generator configured to generate a proportional to absolute temperature (PTAT) current and generate an analog control voltage inversely proportional to the PTAT current, and a load current control circuit configured to control a first load current supplied to the bit line based on the analog control voltage.

Abstract: A column driver of a display device provides a high slew rate with lowered power requirements by using external switches connected to upper and bottom output buffers. The upper output buffer is driven between a first voltage rail and a second voltage rail, and outputs a first output signal in response to a first input signal and a second input signal. The bottom output buffer is driven between the second voltage rail and a third voltage rail, and outputs a second output signal in response to a third input signal and a fourth input signal. A first switch group selectively provides input for the upper output buffer and the bottom output buffer. A second switch group feeds back the first and the second output signals to the first or the second input terminal of each of the upper output buffer and the bottom output buffer.

Abstract: The present invention relates to a polymerization reactor. The polymerization reactor according to one aspect of the present invention comprises: a housing including a supply part for supplying a reactant; a tube which is provided inside the housing and extends along the height direction of the housing; a first impeller including a blade which spirally surrounds the tube along the height direction of the housing; a second impeller which is provided inside the housing in order to enable the reactant to flow into the tube; and a partition wall which is provided to surround the second impeller along the circumferential direction.

Abstract: A memory device includes a memory cell, a bit line connected to the memory cell, a control voltage generator configured to generate a proportional to absolute temperature (PTAT) current and generate an analog control voltage inversely proportional to the PTAT current, and a load current control circuit configured to control a first load current supplied to the bit line based on the analog control voltage.

Abstract: A column driver of a display device provides a high slew rate with lowered power requirements by using external switches connected to upper and bottom output buffers. The upper output buffer is driven between a first voltage rail and a second voltage rail, and outputs a first output signal in response to a first input signal and a second input signal. The bottom output buffer is driven between the second voltage rail and a third voltage rail, and outputs a second output signal in response to a third input signal and a fourth input signal. A first switch group selectively provides input for the upper output buffer and the bottom output buffer. A second switch group feeds back the first and the second output signals to the first or the second input terminal of each of the upper output buffer and the bottom output buffer.

Abstract: A method of manufacturing a semiconductor device, the method including forming a structure on a substrate, the structure including a metal pattern, at least a portion of the metal pattern being exposed; forming a preliminary buffer oxide layer to cover the structure, a metal oxide layer being formed at the exposed portion of the metal pattern; and deoxidizing the metal oxide layer so that the preliminary buffer oxide layer is transformed into a buffer oxide layer.

Abstract: A column driver of a display device provides a high slew rate with lowered power requirements by using external switches connected to upper and bottom output buffers. The upper output buffer is driven between a first voltage rail and a second voltage rail, and outputs a first output signal in response to a first input signal and a second input signal. The bottom output buffer is driven between the second voltage rail and a third voltage rail, and outputs a second output signal in response to a third input signal and a fourth input signal. A first switch group selectively provides input for the upper output buffer and the bottom output buffer. A second switch group feeds back the first and the second output signals to the first or the second input terminal of each of the upper output buffer and the bottom output buffer.

Abstract: A mixer and a reactor including the same are provided. According to one aspect of the present invention, the mixer includes a first piping part into which a first fluid flows, an elbow piping part having an inlet connected to the first piping part and an outlet provided at a location rotated by a predetermined angle from the inlet in a flow direction of the first fluid to have a curved flow path, and a second piping part connected to the elbow piping part to have a central axis perpendicular to a central axis of the first piping part so that a second fluid flows in a tangential direction of the elbow piping part when the second fluid flows into the elbow piping part.

Abstract: A semiconductor device is provided. The semiconductor device includes a stack structure comprising insulating patterns and electrode structures alternately stacked on a substrate, and a vertical channel structure vertically penetrating the stack structure. Each of the electrode structures includes a conductive pattern having a first sidewall and a second sidewall opposite to the first sidewall, a first etching prevention pattern on the first sidewall, and a second etching prevention pattern on the second sidewall.

Abstract: A method of manufacturing a semiconductor device, the method including forming a structure on a substrate, the structure including a metal pattern, at least a portion of the metal pattern being exposed; forming a preliminary buffer oxide layer to cover the structure, a metal oxide layer being formed at the exposed portion of the metal pattern; and deoxidizing the metal oxide layer so that the preliminary buffer oxide layer is transformed into a buffer oxide layer.

Abstract: A precharge control signal generator and a semiconductor memory device include a precharge control signal generating circuit which generates a precharge control signal and applies the precharge control signal to a sensing circuit, and a sensing circuit configured to precharge a bit line connected to a memory cell according to the precharge control signal and read data stored in the memory cell. The precharge control signal controls the sensing circuit so that a precharge time is adjusted according to operating temperature.

Abstract: Disclosed here is a separator. The separator includes a cylindrical body in which a spatial portion is provided for separation, a supply pipe provided so that the mixture is introduced in a tangential direction of the cylindrical body to generate a revolving gas flow of the mixture in the spatial portion, a discharge pipe provided so that the first material is discharged to the outside through a rising gas flow of a central portion of the spatial portion, and a deflector provided to be parallel to the supply pipe in a circumferential direction of the spatial portion to prevent the mixture introduced into the spatial portion through the supply pipe from rising.

Abstract: An atomic layer deposition (ALD) apparatus includes a first process chamber in which a substrate is accommodated, a plasma generating unit provided on the outside of the first process chamber, a source gas supply unit provided on an upper portion of the plasma generating unit, and configured to supply a plurality of source gases, a purge gas supply unit configured to supply a purge gas to the first process chamber, and a gas control unit configured to control the supply of the source gases and the purge gas, wherein the plasma generating unit includes a second process chamber providing a space in which plasma is generated and a plasma antenna inducing a magnetic field in the second process chamber, and the source gases are supplied to the first process chamber through the plasma generating unit.