Abstract: A substrate processing apparatus includes a chamber providing a space in which a substrate is processed, a first substrate support within the chamber and configured to support the substrate when the substrate is loaded into chamber, a second substrate support within the chamber and configured to support the substrate in a height greater than the height in which the first substrate supports the substrate, a first supply port through which a supercritical fluid is supplied to a first space under the substrate of a chamber space, a second supply port through which the supercritical fluid is supplied to a second space above the substrate of the chamber space, and an exhaust port through which the supercritical fluid is exhausted from the chamber.

Abstract: Disclosed is a method, system, and non-transitory computer-readable record medium for creating a chatroom according to a condition. The chatroom creation method may include providing an instant messaging service; registering a chatroom creation condition related to a specific account of the instant messaging service; retrieving at least one account of accounts of the instant messaging service that meets the chatroom creation condition; and automatically creating a chatroom of the specific account joined by the retrieved accounts.

Abstract: Provided are a nitrite substitute including a mixture of plasma-treated vegetables and egg white, a food including the nitrite substitute, and a method of preparing a food, the method including mixing the nitrite substitute with raw materials of a food to prepare a food emulsion. Foods having added thereto the nitrite substitute may exhibit colors and effects similar to those in conventional foods without an unpleasant taste.

Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory device comprises a first semiconductor pattern that is on a substrate and that includes a first end and a second end that face each other, a first conductive line that is adjacent to a lateral surface of the first semiconductor pattern between the first and second ends and that is perpendicular to a top surface of the substrate, a second conductive line that is in contact with the first end of the first semiconductor pattern, is spaced part from the first conductive line, and is parallel to the top surface of the substrate, and a data storage pattern in contact with the second end of the first semiconductor pattern. The first conductive line has a protrusion that protrudes adjacent to the lateral surface of the first semiconductor pattern.

Abstract: The present invention relates to a material having various functions such as antimicrobial function or waterproof function, as well as a method and an apparatus for manufacturing the same. The method for manufacturing a functional material according to the present invention includes coating a surface of conductive or non-conductive material with an electrically charged microfine material having a size of nano- or micro-units, thereby imparting functionality to the material simultaneously with maintaining intrinsic properties thereof.

Abstract: Disclosed herein are a flexible thermoelectric module cell for a touch sensor, a touch sensor including the same, and a method of manufacturing the flexible thermoelectric module cell for a touch sensor. The flexible thermoelectric module cell is applicable to cells for touch sensors of various designs, without the need for a person to go directly to an industrially dangerous place.

Abstract: The present disclosure relates to a method for predicting demand using a visual schema of a product, a device therefor, and a computer program therefor. The demand predicting method includes the operations of: creating visual schemas in which attributes of a product are digitized; analyzing the visual schemas and creating visual schema analysis data which are data relating to the attributes of the product; creating prediction data which are data obtained as a result of demand prediction analysis by attributes of the product using the visual schema analysis data; and creating visual narrative data expressing the prediction data into correlation between products or customers, and describing demand prediction.

Abstract: Disclosed is a method, system, and non-transitory computer-readable record medium for protecting content copyright in a chatroom. A content protection method includes adding, by at least one processor, a mark to content in a chatroom, the mark including chatroom information for identifying the chatroom in response to a user request from a user associated with the content in the chatroom, and executing, by the at least one processor, a function corresponding to the user request using the content to which the mark is added.

Abstract: Disclosed herein are a hydrogel bead, a chemical sensor including the same, and an electronic product including the chemical sensor. The hydrogel bead includes at least one type of polysaccharide physically crosslinked with a cation or an anion, and a pH indicator dye.

Abstract: Disclosed are a semiconductor memory device and a method of manufacturing the same. The semiconductor memory device includes a device isolation layer defining active regions of a substrate, and gate lines buried in the substrate and extending across the active regions. Each of the gate lines includes a conductive layer, a liner layer disposed between and separating the conductive layer and the substrate, and a first work function adjusting layer disposed on the conductive layer and the liner layer. The first work function adjusting layer includes a first work function adjusting material. A work function of the first work function adjusting layer is less than those of the conductive layer and the liner layer.

Abstract: Disclosed is a method, system, and non-transitory computer-readable record medium for protecting content copyright in a chatroom. A content protection method includes adding, by at least one processor, a mark to content in a chatroom, the mark including chatroom information for identifying the chatroom in response to a user request from a user associated with the content in the chatroom, and executing, by the at least one processor, a function corresponding to the user request using the content to which the mark is added.

Abstract: Disclosed are a semiconductor memory device and a method of manufacturing the same. The semiconductor memory device includes a device isolation layer defining active regions of a substrate, and gate lines buried in the substrate and extending across the active regions. Each of the gate lines includes a conductive layer, a liner layer disposed between and separating the conductive layer and the substrate, and a first work function adjusting layer disposed on the conductive layer and the liner layer. The first work function adjusting layer includes a first work function adjusting material. A work function of the first work function adjusting layer is less than those of the conductive layer and the liner layer.

Abstract: An integrated flexible thermoelectric device includes p-type carbon nanoparticle regions and n-type carbon nanoparticle regions which are alternately and continuously connected to each other. In particular, the p-type carbon nanoparticle regions and the n-type carbon nanoparticle regions are formed on the one carbon nanoparticle paper.

Abstract: A circulator for a cooling mat, whereby water is brought into contact with a frozen refrigerant, cooled thereby, and then circulated through a pipe of the mat. A cooling effect can be provided to a user in contact with the mat by using the circulator having a simple structure.

Abstract: A semicondcutor device, and a method of fabricating the semiconductor device including forming on a substrate a device isolation layer defining a plurality of active regions; and forming a plurality of gate lines intersecting the active regions and buried in the substrate. The forming of the gate lines includes forming on the substrate a trench that intersects the active regions; forming a work-function control layer on a sidewall and a bottom surface of the trench; forming a conductive layer on the work-function control layer; sequentially forming a barrier layer and a source layer on the work-function control layer and the conductive layer, the source layer including a work-function control element; and diffusing the work-function control element from the source layer into an upper portion of the work-function control layer.

Abstract: Disclosed is a bulk bag having self-standing loops. The bulk bag is configured with a bag-shaped body having a reversed “U”-shaped loop protruding upwardly from an outside thereof and configured to flexibly stand upright by itself from a folded position upon unstacking of bodies, wherein the loop is coupled to the body at a position spaced downwardly apart from a top edge of the body by a predetermined distance, the loop having an air tube having a predetermined length and coupled to an outside of the loop. The loop is configured with a semicircular arc-shaped hook portion and “I”-shaped supporting portions respectively extending from opposite ends of the hook portion, and the air tube is coupled with the hook portion and an at least one supporting portion and is heat-treated and flexibly bent at a portion corresponding to a boundary point between the hook portion and the supporting portion.

Abstract: An integrated circuit (IC) device includes a first and a second fin-type active region protruding from a first region and a second region, respectively, of a substrate, a first and a second gate line, and a first and a second source/drain region. The first fin-type active region has a first top surface and a first recess has a first depth from the first top surface. The first source/drain region fills the first recess and has a first width. The second fin-type active region has a second top surface and a second recess has a second depth from the second top surface. The second depth is greater than the first depth. The second source/drain region fills the second recess and has a second width. The second width is greater than the first width.

Abstract: A substrate including a gate line and a first electrode disposed on the substrate, an oxide semiconductor layer pattern overlapping the first electrode, an insulating layer disposed between the first electrode and the oxide semiconductor layer pattern, a data line intersecting the gate line, a second electrode electrically connected to the oxide semiconductor layer pattern, a third electrode electrically connected to the oxide semiconductor layer, the third electrode spaced apart from the second electrode, and an insulating pattern including a first portion which is disposed between the gate line and the data line and at least partially overlaps with both of the gate line and the data line.

Abstract: A semicondcutor device, and a method of fabricating the semiconductor device including forming on a substrate a device isolation layer defining a plurality of active regions; and forming a plurality of gate lines intersecting the active regions and buried in the substrate. The forming of the gate lines includes forming on the substrate a trench that intersects the active regions; forming a work-function control layer on a sidewall and a bottom surface of the trench; forming a conductive layer on the work-function control layer; sequentially forming a barrier layer and a source layer on the work-function control layer and the conductive layer, the source layer including a work-function control element; and diffusing the work-function control element from the source layer into an upper portion of the work-function control layer.

Abstract: An integrated flexible thermoelectric device includes p-type carbon nanoparticle regions and n-type carbon nanoparticle regions which are alternately and continuously connected to each other. In particular, the p-type carbon nanoparticle regions and the n-type carbon nanoparticle regions are formed on the one carbon nanoparticle paper.