Patents by Inventor Hyun Namkoong

Hyun Namkoong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method of fabricating the same
    Patent number: 7928495
    Abstract: A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.
    Type: Grant
    Filed: October 18, 2010
    Date of Patent: April 19, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jung-Hwan Kim, Hun-Hyeoung Leam, Tae-Hyun Kim, Seok-Woo Nam, Hyun Namkoong, Yong-Seok Kim, Tea-Kwang Yu
  • Semiconductor Device and Method of Fabricating the Same
    Publication number: 20110037141
    Abstract: A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.
    Type: Application
    Filed: October 18, 2010
    Publication date: February 17, 2011
    Inventors: Jung-Hwan Kim, Hun-Hyeoung Leam, Tae-Hyun Kim, Seok-Woo Nam, Hyun Namkoong, Yong-Seok Kim, Tea-Kwang Yu
  • Semiconductor device and method of fabricating the same
    Patent number: 7833875
    Abstract: A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.
    Type: Grant
    Filed: October 31, 2007
    Date of Patent: November 16, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jung-Hwan Kim, Hun-Hyeoung Leam, Tae-Hyun Kim, Seok-Woo Nam, Hyun Namkoong, Yong-Seok Kim, Tea-Kwang Yu
  • Semiconductor Device and Method of Fabricating the Same
    Publication number: 20080057670
    Abstract: A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.
    Type: Application
    Filed: October 31, 2007
    Publication date: March 6, 2008
    Inventors: Jung Kim, Hun-Hyeoung Leam, Tae-Hyun kim, Seok-Woo Nam, Hyun Namkoong, Yong-Seok Kim, Tea-Kwang Yu