Patents by Inventor Hyun Roh
Hyun Roh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11978775Abstract: A semiconductor device comprising a gate electrode on a substrate, a source/drain pattern on the substrate on a side of the gate electrode, and a gate contact plug on the gate electrode are disclosed. The gate contact plug may include a first gate contact segment, and a second gate contact segment that extends in a vertical direction from a top surface of the first gate contact segment. An upper width of the first gate contact segment may be greater than a lower width of the second gate contact segment.Type: GrantFiled: June 16, 2022Date of Patent: May 7, 2024Assignee: Samsung Electronics Co., Ltd.Inventors: Doohyun Lee, Hyun-Seung Song, Yeongchang Roh, Heonjong Shin, Sora You, Yongsik Jeong
-
Publication number: 20240143927Abstract: Provided are a method for generating a summary and a system therefor. The method according to some embodiments may include calculating a likelihood loss for a summary model using a first text sample and a first summary sentence corresponding to the first text sample, calculating an unlikelihood loss for the summary model using a second text sample and the first summary sentence, the second text sample being a negative sample generated from the first text sample, and updating the summary model based on the likelihood loss and the unlikelihood loss.Type: ApplicationFiled: October 26, 2023Publication date: May 2, 2024Applicants: SAMSUNG SDS CO., LTD., SEOUL NATIONAL UNIVERSITY R&DB FOUNDATIONInventors: Sung Roh YOON, Bong Kyu HWANG, Ju Dong KIM, Jae Woong YUN, Hyun Jae LEE, Hyun Jin CHOI, Jong Yoon SONG, Noh II PARK, Seong Ho JOE, Young June GWON
-
Publication number: 20240123548Abstract: Embodiments relate to laser welding methods, monitoring methods, and monitoring systems for a secondary battery. A laser welding method for a secondary battery includes performing laser welding on a positive electrode base having a thin-film shape in which a plurality of positive electrode base tabs are formed at a side, a negative electrode base having a thin-film shape in which a plurality of negative electrode base tabs are formed at a side, and a thin-film multi-tab to be joined to each of the positive electrode base and the negative electrode base, a welded portion in which the multi-tab is welded with the positive electrode base and the negative electrode base being melting-joined by using a laser such that a plurality of welding spots is formed on the welded portion.Type: ApplicationFiled: December 22, 2023Publication date: April 18, 2024Inventors: Jae Hoon ROH, Sang Hyun RYU, Myung Jun PARK, Seong Bae AN, Yong Gyu AN, Hee Dong JUNG, Jin Gyu HEO
-
Patent number: 11957669Abstract: One aspect of the present disclosure is a pharmaceutical composition which includes (R)—N-[1-(3,5-difluoro-4-methansulfonylamino-phenyl)-ethyl]-3-(2-propyl-6-trifluoromethyl-pyridin-3-yl)-acrylamide as a first component and a cellulosic polymer as a second component, wherein the composition of one aspect of the present disclosure has a formulation characteristic in which crystal formation is delayed for a long time.Type: GrantFiled: August 10, 2018Date of Patent: April 16, 2024Assignee: AMOREPACIFIC CORPORATIONInventors: Joon Ho Choi, Won Kyung Cho, Kwang-Hyun Shin, Byoung Young Woo, Ki-Wha Lee, Min-Soo Kim, Jong Hwa Roh, Mi Young Park, Young-Ho Park, Eun Sil Park, Jae Hong Park
-
Publication number: 20240116135Abstract: An apparatus for manufacturing a secondary battery includes: an index table configured to receive a secondary battery cell, the secondary battery cell including an electrode assembly, a can accommodating the electrode assembly, and an electrode tab between the electrode assembly and the can to electrically connect the electrode assembly to the can; a laser scanner configured to irradiate laser onto an outer surface of the can to weld the electrode tab to the can; and a controller configured to variably control the laser scanner according to an operation of the index table.Type: ApplicationFiled: August 18, 2023Publication date: April 11, 2024Inventors: Yong Gyu AN, Tae Jin YOON, Su Sang CHO, Seong Bae AN, Sang Hyun RYU, Jae Hoon ROH, Myung Jun PARK
-
Patent number: 11955531Abstract: An integrated circuit device includes a fin-type active region protruding from a top surface of a substrate and extending in a first direction parallel to the top surface of the substrate, a gate structure intersecting with the fin-type active region and extending on the substrate in a second direction perpendicular to the first direction, a source/drain region on a first side of the gate structure, a first contact structure on the source/drain region, and a contact capping layer on the first contact structure. A top surface of the first contact structure has a first width in the first direction, a bottom surface of the contact capping layer has a second width greater than the first width stated above in the first direction, and the contact capping layer includes a protruding portion extending outward from a sidewall of the first contact structure.Type: GrantFiled: February 27, 2023Date of Patent: April 9, 2024Assignee: Samsung Electronics Co., Ltd.Inventors: Dae-young Kwak, Ji-ye Kim, Jung-hwan Chun, Min-chan Gwak, Dong-hyun Roh, Jin-wook Lee, Sang-jin Hyun
-
Publication number: 20240079835Abstract: A signal transmission connector including a frame base in which a first through hole and a second through hole are alternately formed and a frame including a frame top plate having a third through hole at each position corresponding to the first through hole and covering a top surface of the frame base. A frame bottom plate having a fourth through hole at each position corresponding to the first through hole and covering a bottom surface of the frame base and a conductive part disposed on a conductive part hole including a first through hole, a third through hole, and a fourth through hole and being in the form of a plurality of conductive particles in the elastic insulating material, wherein the frame is made of an inelastic insulating material. An air layer is formed in the second through hole sealed by the frame top plate and the frame bottom plate.Type: ApplicationFiled: August 29, 2023Publication date: March 7, 2024Applicant: TSE CO., LTDInventors: Dea Hyun ROH, Yun Chan NAM
-
Publication number: 20240014209Abstract: A semiconductor device includes active fins on a substrate, a first isolation pattern on the substrate, the first isolation pattern extending on a lower sidewall of each of the active fins, a third isolation pattern including an upper portion extending into the first isolation pattern and a lower portion extending into an upper portion of the substrate, the lower portion contacting the upper portion of the third isolation pattern, and having a lower surface with a width greater than that of an upper surface thereof, and a second isolation pattern extending in the substrate under the third isolation pattern, contacting the third isolation pattern, and having a rounded lower surface.Type: ApplicationFiled: September 25, 2023Publication date: January 11, 2024Inventors: Gyu-Hwan Ahn, Sung-Soo Kim, Chae-Ho Na, Dong-Hyun Roh, Sang-Jin Hyun
-
Patent number: 11804483Abstract: A semiconductor device includes active fins on a substrate, a first isolation pattern on the substrate, the first isolation pattern extending on a lower sidewall of each of the active fins, a third isolation pattern including an upper portion extending into the first isolation pattern and a lower portion extending into an upper portion of the substrate, the lower portion contacting the upper portion of the third isolation pattern, and having a lower surface with a width greater than that of an upper surface thereof, and a second isolation pattern extending in the substrate under the third isolation pattern, contacting the third isolation pattern, and having a rounded lower surface.Type: GrantFiled: February 17, 2021Date of Patent: October 31, 2023Inventors: Gyu-Hwan Ahn, Sung-Soo Kim, Chae-Ho Na, Dong-Hyun Roh, Sang-Jin Hyun
-
Patent number: 11728409Abstract: A semiconductor device includes first and second active patterns each extending in a first direction and are spaced apart from each other in a second direction that is perpendicular to the first direction. A field insulating layer is disposed between the first active pattern and the second active pattern. A first gate structure is disposed on the first active pattern and extends in the second direction. An interlayer insulating layer is disposed between the first gate structure and the field insulating layer. The interlayer insulating layer includes a first part disposed below the first gate structure. A spacer is disposed between the first gate structure and the first part of the interlayer insulating layer.Type: GrantFiled: December 4, 2020Date of Patent: August 15, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sun Hye Lee, Sung Soo Kim, Ik Soo Kim, Woong Sik Nam, Dong Hyun Roh
-
Publication number: 20230233502Abstract: The present invention relates to a novel cocrystal, a pharmaceutical composition comprising same and a preparation method therefor. By using the cocrystal of the present invention, cancers, inflammatory diseases, or viral infection diseases may be effectively prevented and/or treated.Type: ApplicationFiled: January 28, 2022Publication date: July 27, 2023Inventors: Young Joon PARK, Sook CHOI, Ga Haeng LEE, Dong Hyun ROH
-
Publication number: 20230207662Abstract: An integrated circuit device includes a fin-type active region protruding from a top surface of a substrate and extending in a first direction parallel to the top surface of the substrate, a gate structure intersecting with the fin-type active region and extending on the substrate in a second direction perpendicular to the first direction, a source/drain region on a first side of the gate structure, a first contact structure on the source/drain region, and a contact capping layer on the first contact structure. A top surface of the first contact structure has a first width in the first direction, a bottom surface of the contact capping layer has a second width greater than the first width stated above in the first direction, and the contact capping layer includes a protruding portion extending outward from a sidewall of the first contact structure.Type: ApplicationFiled: February 27, 2023Publication date: June 29, 2023Inventors: Dae-young KWAK, Ji -ye KIM, Jung-hwan CHUN, Min-chan GWAK, Dong-hyun ROH, Jin-wook LEE, Sang-jin HYUN
-
Patent number: 11626503Abstract: An integrated circuit device includes a fin-type active region protruding from a top surface of a substrate and extending in a first direction parallel to the top surface of the substrate, a gate structure intersecting with the fin-type active region and extending on the substrate in a second direction perpendicular to the first direction, a source/drain region on a first side of the gate structure, a first contact structure on the source/drain region, and a contact capping layer on the first contact structure. A top surface of the first contact structure has a first width in the first direction, a bottom surface of the contact capping layer has a second width greater than the first width stated above in the first direction, and the contact capping layer includes a protruding portion extending outward from a sidewall of the first contact structure.Type: GrantFiled: August 3, 2021Date of Patent: April 11, 2023Inventors: Dae-young Kwak, Ji-ye Kim, Jung-hwan Chun, Min-chan Gwak, Dong-hyun Roh, Jin-wook Lee, Sang-jin Hyun
-
Patent number: 11600518Abstract: A semiconductor device includes a substrate having first fin and a second fin spaced apart and extending lengthwise in parallel. A fin remnant is disposed between the first fin and the second fin, extends lengthwise in parallel with the first and second fins, and has a height lower than a height of each of the first fin and the second fin. A first field insulation layer is disposed between a sidewall of the first fin and a first sidewall of the fin remnant and a second field insulating layer is disposed on a sidewall of the second fin. A blocking liner conforms to a sidewall and a bottom surface of a trench bounded by a second sidewall of the fin remnant and a sidewall of the second field insulating layer. A trench insulation layer is disposed on the blocking liner in the trench.Type: GrantFiled: May 5, 2021Date of Patent: March 7, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sung Soo Kim, Chae Ho Na, Gyu Hwan Ahn, Dong Hyun Roh, Sang Jin Hyun
-
Publication number: 20220393030Abstract: Semiconductor devices and methods of forming the same are provided. The semiconductor devices may include a first fin-type pattern and a second fin-type pattern on a substrate, a first epitaxial pattern on the first fin-type pattern, a second epitaxial pattern on the second fin-type pattern, and a lower field insulating film on the substrate and extends on a sidewall of the first fin-type pattern and a sidewall of the second fin-type pattern, wherein the lower field insulating film includes a protrusion protruding in a third direction. The protrusion of the lower field insulating film may be between the first fin-type pattern and the second fin-type pattern, and a vertical level of a top surface of the protrusion of the lower field insulating film increases and then decreases with increasing distance from the sidewall of the first fin-type pattern.Type: ApplicationFiled: February 9, 2022Publication date: December 8, 2022Inventors: Chae Ho NA, Sung Soo Kim, Sun Ki Min, Dong Hyun Roh
-
Patent number: 11495223Abstract: An electronic device according to various embodiments may comprise a memory in which one or more applications are installed, a communication circuit, and a processor, wherein the processor is configured to acquire audio data during execution of a designated application among the one or more applications, wherein the acquiring of audio data comprises an operation of storing, in the memory, at least a portion including multiple pieces of phoneme information among the audio data, when a designated condition is satisfied, transmit the at least portion to an external electronic device so that the external electronic device generates designated information for execution of at least one application among the one or more applications by using at least a part of the multiple pieces of phoneme information stored before the designated condition is satisfied, and on the basis of the designated information, execute the at least one application in relation to the designated application.Type: GrantFiled: November 1, 2018Date of Patent: November 8, 2022Assignee: Samsung Electronics Co., Ltd.Inventors: Hyun Gi Ahn, Joo Yoo Kim, Ji Eun Kim, Dong Hyun Roh, Kyung Sub Min, Seung Eun Lee
-
Patent number: 11464274Abstract: An insole including a base; an electronic element provided to the base; a connection line configured to extend from the electronic element and to pass through the base; and a cover provided on a top surface of the base to cover the electronic element and configured to be separable from the base.Type: GrantFiled: October 23, 2019Date of Patent: October 11, 2022Assignee: Samsung Electronics Co., Ltd.Inventors: Se-Gon Roh, Haewook Ahn, Yeji Bae, Minho Choi, Chang Hyun Roh, Youngbo Shim
-
Publication number: 20220262673Abstract: A semiconductor device includes a substrate, a first fin, and a second fin. The first and second fins are spaced apart from each other in a first direction on the substrate and extend in a second direction intersecting the first direction. The semiconductor device further includes a first shallow trench formed between the first and second fins, and a field insulating film which fills at least a part of the first shallow trench. The field insulating film includes a first portion, a second portion adjacent to the first portion, and a third portion adjacent to the second portion and adjacent to a side wall of the first shallow trench. The first portion includes a central portion of an upper surface of the field insulating film in the first direction. The upper surface of the field insulating film is in a shape of a brace recessed toward the substrate.Type: ApplicationFiled: May 9, 2022Publication date: August 18, 2022Inventors: Chae Ho NA, Sung Soo KIM, Gyu Hwan AHN, Dong Hyun ROH
-
Patent number: 11416213Abstract: An electronic device includes a microphone, a processor, and a memory. The memory stores an application for monitoring user information, and the memory stores instructions that, when executed by the processor, cause the electronic device to record a plurality of parameters associated with the user information in the application when a predefined event occurs to record a first parameter and the first parameter is not recorded in the application, to output a message for obtaining the first parameter, to receive a user response associated with the first parameter, to transmit data associated with the user response to an external server, to receive a first response from the external server, and to record the first parameter in the application by allowing the electronic device to have information about sequences of states of the electronic device. The first response includes information about sequences of states of the electronic device for recording the first parameter in the application.Type: GrantFiled: July 27, 2018Date of Patent: August 16, 2022Assignee: Samsung Electronics Co., Ltd.Inventors: Joo Yoo Kim, Jun Hui Kim, Ji Eun Kim, Tae Ho Kim, Dong Hyun Roh, Hyun Gi Ahn, Da Som Lee, Seung Eun Lee
-
Patent number: 11328949Abstract: A semiconductor device includes a substrate, a first fin, and a second fin. The first and second fins are spaced apart from each other in a first direction on the substrate and extend in a second direction intersecting the first direction. The semiconductor device further includes a first shallow trench formed between the first and second fins, and a field insulating film which fills at least a part of the first shallow trench. The field insulating film includes a first portion, a second portion adjacent to the first portion, and a third portion adjacent to the second portion and adjacent to a side wall of the first shallow trench. The first portion includes a central portion of an upper surface of the field insulating film in the first direction. The upper surface of the field insulating film is in a shape of a brace recessed toward the substrate.Type: GrantFiled: March 26, 2020Date of Patent: May 10, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Chae Ho Na, Sung Soo Kim, Gyu Hwan Ahn, Dong Hyun Roh