Abstract: A touch sensing device of a current driving type, which separately drives a parasitic capacitor by using an electric charge controller, includes a parasitic capacitance charger connected to a touch sensing line to charge a parasitic capacitor of a touch electrode connected to the touch sensing line with a predetermined charging current during a charging period and a sensing unit connected to the touch sensing line during a first driving period to drive a capacitor of the touch electrode with a first driving current corresponding to a difference voltage between a first voltage, charged into the parasitic capacitor when a touch does not occur, and a second voltage charged into the parasitic capacitor when a touch occurs and to sense a first touch voltage of the capacitor based on the first driving current during a first sensing period.

Abstract: Disclosed is a touch sensing device for preventing touch sensing performance from being reduced by a parasitic capacitance. The touch sensing device includes a plurality of buffers buffering a difference between a reference signal and a reception signal received from a touch electrode and generating first and second currents corresponding to a buffered signal, a plurality of current mirror units generating a first output signal using a first mirror current generated through mirroring of the first current and a third mirror current generated through mirroring of the second current and generate a second output signal using a second mirror current generated through mirroring of the first current and a fourth mirror current generated through mirroring of the second current, and a plurality of integrators integrating a difference between the first output signal from an nth current mirror unit and the second output signal from an (n?1)th current mirror unit.

Abstract: A semiconductor chip includes a substrate having a low-k material layer. An electrode pad is disposed the substrate. A first protection layer at least partially surrounds the electrode pad. The first protection layer includes a first opening at an upper portion thereof. A buffer pad is electrically connected to the electrode pad. A second protection layer at least partially surrounds the buffer pad. The second protection layer includes a second opening at an upper portion thereof. A pillar layer and a solder layer are sequentially stacked on the buffer pad. A thickness of the buffer pad is greater than a thickness of the electrode pad. A width of the first opening in a first direction parallel to an upper surface of the semiconductor substrate is equal to or greater than a width of the second opening in the first direction.

Abstract: A semiconductor chip is disclosed that includes a chip pad disposed in a first region of a chip body, a redistribution wiring test pad disposed in the first region of the chip body spaced apart from the chip pad and connected to the chip pad through a redistribution wiring structure, and a redistribution wiring connection pad disposed in the first region of the chip body or a second region of the chip body and connected to the chip pad through the redistribution wiring structure.

Abstract: A semiconductor chip is disclosed that includes a chip pad disposed in a first region of a chip body, a redistribution wiring test pad disposed in the first region of the chip body spaced apart from the chip pad and connected to the chip pad through a redistribution wiring structure, and a redistribution wiring connection pad disposed in the first region of the chip body or a second region of the chip body and connected to the chip pad through the redistribution wiring structure.

Abstract: A touch sensing device of a current driving type, which separately drives a parasitic capacitor by using an electric charge controller, includes a parasitic capacitance charger connected to a touch sensing line to charge a parasitic capacitor of a touch electrode connected to the touch sensing line with a predetermined charging current during a charging period and a sensing unit connected to the touch sensing line during a first driving period to drive a capacitor of the touch electrode with a first driving current corresponding to a difference voltage between a first voltage, charged into the parasitic capacitor when a touch does not occur, and a second voltage charged into the parasitic capacitor when a touch occurs and to sense a first touch voltage of the capacitor based on the first driving current during a first sensing period.

Abstract: Disclosed is a touch sensing device for preventing touch sensing performance from being reduced by a parasitic capacitance. The touch sensing device includes a plurality of buffers buffering a difference between a reference signal and a reception signal received from a touch electrode and generating first and second currents corresponding to a buffered signal, a plurality of current mirror units generating a first output signal using a first mirror current generated through mirroring of the first current and a third mirror current generated through mirroring of the second current and generate a second output signal using a second mirror current generated through mirroring of the first current and a fourth mirror current generated through mirroring of the second current, and a plurality of integrators integrating a difference between the first output signal from an nth current mirror unit and the second output signal from an (n?1)th current mirror unit.

Abstract: Disclosed is a touch sensing device for preventing touch sensing performance from being reduced by a parasitic capacitance. The touch sensing device includes a plurality of buffers buffering a difference between a reference signal and a reception signal received from a touch electrode through a touch sensing line and generating first and second currents corresponding to a buffered signal, a plurality of current mirror unit respectively connected to the plurality of buffers, a plurality of filter circuits generating a first filter signal and a second filter signal by removing common noise included in a first output signal output from an nth current mirror unit of the plurality of current mirror units and a second output signal output from an (n?1)th current mirror unit of the plurality of current mirror units, and a plurality of integrators respectively connected to the plurality of filter circuits.

Abstract: A semiconductor chip includes a substrate. An electrode pad is disposed on the substrate. The electrode pad includes a low-k material layer. A first protection layer at least partially surrounds the electrode pad. The first protection layer includes a first opening at an upper portion thereof. A buffer pad is electrically connected to the electrode pad. A second protection layer at least partially surrounds the buffer pad. The second protection layer includes a second opening at an upper portion thereof. A pillar layer and a solder layer are sequentially stacked on the buffer pad. A thickness of the buffer pad is greater than a thickness of the electrode pad. A width of the first opening in a first direction parallel to an upper surface of the semiconductor substrate is equal to or greater than a width of the second opening in the first direction.

Abstract: A semiconductor package including a heat spreading layer having at least one hole, a first semiconductor chip below the heat spreading layer, a redistribution structure below the first semiconductor chip, a first mold layer between the heat spreading layer and the redistribution structure, a shielding wall extending from the redistribution structure and the heat spreading layer and surrounding the first semiconductor chip, and a first conductive pillar extending from the redistribution structure into the hole may be provided.

Abstract: A semiconductor package including a heat spreading layer having at least one hole, a first semiconductor chip below the heat spreading layer, a redistribution structure below the first semiconductor chip, a first mold layer between the heat spreading layer and the redistribution structure, a shielding wall extending from the redistribution structure and the heat spreading layer and surrounding the first semiconductor chip, and a first conductive pillar extending from the redistribution structure into the hole may be provided.

Abstract: A semiconductor device includes a substrate, a contact pad arranged in the substrate, a bump arranged on the contact pad to be electrically connected with the contact pad, an insulating film arranged on the substrate to surround a side surface of the bump and to expose at least a portion of the contact pad to the bump, and a photosensitive film which is formed on the insulating film and comprises a polyimide, wherein the photosensitive film comprises a first region surrounding the side surface of the bump and having a first thickness measured in a vertical direction, and a second region arranged on the first region and having a second thickness thickermeasured in the vertical direction, wherein the second region is spaced apart from the bump in a horizontal direction, and wherein the second thickness is greater than a thickness two times thicker than a difference value between the second thickness and the first thickness.

Abstract: A semiconductor package including a heat spreading layer having at least one hole, a first semiconductor chip below the heat spreading layer, a redistribution structure below the first semiconductor chip, a first mold layer between the heat spreading layer and the redistribution structure, a shielding wall extending from the redistribution structure and the heat spreading layer and surrounding the first semiconductor chip, and a first conductive pillar extending from the redistribution structure into the hole may be provided.

Abstract: A semiconductor package includes a semiconductor substrate and an electrode pad formed on the semiconductor substrate. The electrode pad includes a central portion and a peripheral portion, and a first pattern is located on the peripheral portion. A passivation layer is formed on the semiconductor substrate and the electrode pad. The passivation layer has an opening exposing the central portion of the electrode pad and a second pattern located on the first pattern. A seed layer is formed on the electrode pad and the passivation layer. The seed layer has a third pattern formed on the second pattern. A bump is formed on the seed layer and electrically connected to the electrode pad. An undercut is formed around the third pattern located under an edge of a lower portion of the bump.

Abstract: A semiconductor chip including through silicon vias (TSVs), wherein the TSVs may be prevented from bending and the method of fabricating the semiconductor chip may be simplified, and a method of fabricating the semiconductor chip. The semiconductor chip includes a silicon substrate having a first surface and a second surface; a plurality of TSVs which penetrate the silicon substrate and protrude above the second surface of the silicon substrate; a polymer pattern layer which is formed on the second surface of the silicon substrate, surrounds side surfaces of the protruding portion of each of the TSVs, and comprises a flat first portion and a second portion protruding above the first portion; and a plated pad which is formed on the polymer pattern layer and covers a portion of each of the TSVs exposed from the polymer pattern layer.

Abstract: A semiconductor chip including through silicon vias (TSVs), wherein the TSVs may be prevented from bending and the method of fabricating the semiconductor chip may be simplified, and a method of fabricating the semiconductor chip. The semiconductor chip includes a silicon substrate having a first surface and a second surface; a plurality of TSVs which penetrate the silicon substrate and protrude above the second surface of the silicon substrate; a polymer pattern layer which is formed on the second surface of the silicon substrate, surrounds side surfaces of the protruding portion of each of the TSVs, and comprises a flat first portion and a second portion protruding above the first portion; and a plated pad which is formed on the polymer pattern layer and covers a portion of each of the TSVs exposed from the polymer pattern layer.

Abstract: A method may include providing a first semiconductor chip and a first insulating layer surrounding lateral sides of the first semiconductor chip; providing a second semiconductor chip and a second insulating layer surrounding lateral sides of the second semiconductor chip; providing a third insulating layer below the first semiconductor chip and first insulating layer, so that the first semiconductor chip is between the third insulating layer and the second semiconductor chip, the third insulating layer forming a package substrate; providing a plurality of external connection terminals on the third insulating layer, such that the third insulating layer has a first surface facing the first semiconductor chip and a second surface facing the external connection terminals; providing a first redistribution line on the first surface of the third insulating layer and extending horizontally along the first surface of the third insulating layer, the first redistribution line contacting a first conductive pad of the fi

Abstract: A semiconductor package includes a semiconductor substrate and an electrode pad formed on the semiconductor substrate. The electrode pad includes a central portion and a peripheral portion, and a first pattern is located on the peripheral portion. A passivation layer is formed on the semiconductor substrate and the electrode pad. The passivation layer has an opening exposing the central portion of the electrode pad and a second pattern located on the first pattern. A seed layer is formed on the electrode pad and the passivation layer. The seed layer has a third pattern formed on the second pattern. A bump is formed on the seed layer and electrically connected to the electrode pad. An undercut is formed around the third pattern located under an edge of a lower portion of the bump.

Abstract: Provided are a semiconductor chip and a semiconductor package capable of obtaining stability and reliability through a connection structure using a through-silicon-via (TSV). The semiconductor chip includes a semiconductor substrate and a through-silicon-via (TSV) structure penetrating through the semiconductor substrate. A connection pad includes a foundation base disposed on a lower surface of the semiconductor substrate and connected to the TSV structure. A protruding portion protrudes from the foundation base and extend to an inside of a first groove formed in a lower surface of the semiconductor substrate.