Abstract: Disclosed are memory devices including a variable resistance memory cell and a word line control circuit. A memory device including a variable resistance memory cell including a variable resistance element, a first cell transistor, and a second cell transistor, a first end of the variable resistance element connected to a bit line, a second end of the variable resistance element, a first end of the first cell transistor, and a first end of the second cell transistor connected to the common node, a second end of the first cell transistor and a second end of the second cell transistor connected to a source line, and a word line control circuit configured to separate a sub word line connected to a gate electrode of the second cell transistor from a word line connected to a gate electrode of the first cell transistor in a first write operation and to connect the word line and the sub word line to each other in a second write operation may be provided.

Abstract: Disclosed is a memory device. The memory device includes a memory cell array that includes a target cell, a row decoder that drive a word line, and a write driver and sense amplifier that are configured to drive a bit line and a source line. The row decoder is configured to drive the word line in a first program operation and a second program operation. Between a start of the first program operation and an end of the second program operation, the write driver and sense amplifier are configured to continuously drive a bit line connected to the target cell with a second driving voltage or drive a source line connected to the target cell with a third driving voltage.

Abstract: A variable compression ratio engine includes a piston reciprocally moving in a cylinder of an engine; a variable compression ratio apparatus controlling a movable range of the piston; and a controller controlling the variable compression ratio apparatus if a driving condition of a vehicle and a stability condition of the engine are satisfied to change a compression ratio and controlling a motor torque and an engine torque to control a requirement torque to be satisfied.

Abstract: Disclosed are memory devices including a variable resistance memory cell and a word line control circuit. A memory device including a variable resistance memory cell including a variable resistance element, a first cell transistor, and a second cell transistor, a first end of the variable resistance element connected to a bit line, a second end of the variable resistance element, a first end of the first cell transistor, and a first end of the second cell transistor connected to the common node, a second end of the first cell transistor and a second end of the second cell transistor connected to a source line, and a word line control circuit configured to separate a sub word line connected to a gate electrode of the second cell transistor from a word line connected to a gate electrode of the first cell transistor in a first write operation and to connect the word line and the sub word line to each other in a second write operation may be provided.

Abstract: Disclosed is a memory device. The memory device includes a memory cell array that includes a target cell, a row decoder that drive a word line, and a write driver and sense amplifier that are configured to drive a bit line and a source line. The row decoder is configured to drive the word line in a first program operation and a second program operation. Between a start of the first program operation and an end of the second program operation, the write driver and sense amplifier are configured to continuously drive a bit line connected to the target cell with a second driving voltage or drive a source line connected to the target cell with a third driving voltage.

Abstract: An apparatus for controlling a gasoline-diesel complex combustion engine includes an engine generating driving torque by burning gasoline fuel and diesel fuel, a driving information detector for detecting driving information of the engine, and a controller for controlling a diesel injector such that diesel fuel is injected as a single injection or a split injection based on a driving region and a knock intensity included within the driving information.

Abstract: A variable compression ratio engine includes a piston reciprocally moving in a cylinder of an engine; a variable compression ratio apparatus controlling a movable range of the piston; and a controller controlling the variable compression ratio apparatus if a driving condition of a vehicle and a stability condition of the engine are satisfied to change a compression ratio and controlling a motor torque and an engine torque to control a requirement torque to be satisfied.

Abstract: A memory device may include a selected bit line connected to a first node and configured to receive a first current, a selected memory cell connected to the selected bit line, a reference bit line connected to a second node and configured to receive a second current, a reference memory cell connected between the reference bit line and a reference source line, a sub bit line connected to the second node, a sub memory cell connected between the sub bit line and a sub source line, and a sense amplifier configured to sense a voltage difference between the first node and the second node to determine data read from a selected memory cell connected to the selected bit line. The sub memory cell may include a cell transistor. A gate electrode of the cell transistor may be connected to the sub source line.

Abstract: A memory device may include a selected bit line connected to a first node and configured to receive a first current, a selected memory cell connected to the selected bit line, a reference bit line connected to a second node and configured to receive a second current, a reference memory cell connected between the reference bit line and a reference source line, a sub bit line connected to the second node, a sub memory cell connected between the sub bit line and a sub source line, and a sense amplifier configured to sense a voltage difference between the first node and the second node to determine data read from a selected memory cell connected to the selected bit line. The sub memory cell may include a cell transistor. A gate electrode of the cell transistor may be connected to the sub source line.

Abstract: A logic circuit may include at least one magnetic tunnel junction device including a first layer configured to receive a particular input signal and a second layer connected to a node, and an inverter connected to the node and configured to generate an output signal by inverting a signal of the node, wherein the inverter includes a transistor on a substrate, and the at least one magnetic tunnel junction device is on an upper portion of the transistor. The at least one magnetic tunnel junction device may include first and second magnetic tunnel junction devices configured to receive first and second input signals, respectively. The logic circuit may include a magnetic tunnel junction device and a reference resistor configured to receive a second input signal, the reference resistor connected to the node, the reference resistor having a reference resistance. The logic circuit may be included in an apparatus.

Abstract: A semiconductor memory device includes a memory cell including a memory magnetic tunnel junction (MTJ) configured to be coupled to a first sensing node and a reference cell including a first resistance element and a second resistance element configured to be coupled in parallel to a second sensing node, the first resistance element including a first number of reference MTJs and the second resistance element including a second number of reference MTJs different from the first number of reference MTJs. The memory device further includes a sensing circuit configured to be coupled to the first and second sensing nodes and to detect a difference in resistance between the memory cell and the reference cell. In some embodiments, the first number of reference MTJs includes first reference MTJs connected in series and the second number of reference MTJs includes second reference MTJs connected in series.

Abstract: A logic circuit may include at least one magnetic tunnel junction device including a first layer configured to receive a particular input signal and a second layer connected to a node, and an inverter connected to the node and configured to generate an output signal by inverting a signal of the node, wherein the inverter includes a transistor on a substrate, and the at least one magnetic tunnel junction device is on an upper portion of the transistor. The at least one magnetic tunnel junction device may include first and second magnetic tunnel junction devices configured to receive first and second input signals, respectively. The logic circuit may include a magnetic tunnel junction device and a reference resistor configured to receive a second input signal, the reference resistor connected to the node, the reference resistor having a reference resistance. The logic circuit may be included in an apparatus.

Abstract: An apparatus for controlling a gasoline-diesel complex combustion engine may include an engine generating driving torque by burning gasoline fuel and diesel fuel; a driving information detector for detecting driving information; a swirl pipe disposed in a combustion chamber, wherein gasoline fuel introduced through the swirl pipe generates a flow in a swirl direction in the combustion chamber; a tumble pipe disposed in the combustion chamber, wherein gasoline fuel introduced through the tumble pipe generates a flow in a tumble direction in the combustion chamber; a swirl gasoline injector and a tumble gasoline injector disposed in the swirl pipe and the tumble pipe for injecting gasoline fuel into the combustion chamber, respectively; and a controller calculating knocking intensity from the combustion pressure and the combustion pressure increasing rate, and controlling a gasoline fuel amount injected by the swirl gasoline injector and the tumble gasoline injector according to the knocking intensity.

Abstract: A semiconductor memory device includes a memory cell including a memory magnetic tunnel junction (MTJ) configured to be coupled to a first sensing node and a reference cell including a first resistance element and a second resistance element configured to be coupled in parallel to a second sensing node, the first resistance element including a first number of reference MTJs and the second resistance element including a second number of reference MTJs different from the first number of reference MTJs. The memory device further includes a sensing circuit configured to be coupled to the first and second sensing nodes and to detect a difference in resistance between the memory cell and the reference cell. In some embodiments, the first number of reference MTJs includes first reference MTJs connected in series and the second number of reference MTJs includes second reference MTJs connected in series.

Abstract: The invention is directed to a method for producing metal-containing particles, the method comprising subjecting an aqueous solution comprising a metal salt, Eh, lowering reducing agent, pH adjusting agent, and water to conditions that maintain the Eh value of the solution within the bounds of an Eh-pH stability field corresponding to the composition of the metal-containing particles to be produced, and producing said metal-containing particles in said aqueous solution at a selected Eh value within the bounds of said Eh-pH stability field. The invention is also directed to the resulting metal-containing particles as well as devices in which they are incorporated.

Abstract: An apparatus for controlling a gasoline-diesel complex combustion engine includes an engine generating driving torque by burning gasoline fuel and diesel fuel, a driving information detector for detecting driving information of the engine, and a controller for controlling a diesel injector such that diesel fuel is injected as a single injection or a split injection based on a driving region and a knock intensity included within the driving information.

Abstract: A gasoline-diesel complex combustion engine may include a cylinder including a cylinder body in which a combustion chamber is formed to generate a driving power by combusting a gasoline fuel and a diesel fuel and a cylinder head formed to cover an upper portion of the cylinder body, a pair of intake ports formed in the cylinder head, a pair of exhaust ports formed in the cylinder head, a diesel injector disposed in a center of the cylinder head, a pair of spark plugs disposed on opposite sides of the diesel injector, a first intake pipe and a second intake pipe mounted in the intake ports, an exhaust pipe mounted in the exhaust ports, a pair of intake valves disposed in the first and second intake pipes, and a gasoline injector disposed in the first and second intake pipes to inject the gasoline fuel into the combustion chamber.

Abstract: Provided are a magnetic memory device and a method of forming the same. The magnetic memory device includes a contact plug, which includes a first crystalline region and an amorphous region located on the first crystalline region, and a magnetic tunnel junction pattern located on the amorphous region of the contact plug.

Abstract: A diesel engine piston having a combustion chamber may include a profile surface that protrudes toward a center axis of the combustion chamber from an inner wall thereof and includes a protrusion on the inner wall, the protrusion extending from the inner wall with a predetermined length, wherein the protrusion divides a spray fuel, which may be sprayed and atomized onto the protrusion, into a fuel flow at an upper portion of the combustion chamber and a fuel flow at a lower portion of the combustion chamber, respectively.

Abstract: A diesel-gasoline dual fuel powered combustion engine system is provided with spark-assisted fouling free EGR system in which gasoline and air are homogeneously combined and supplied to cylinders and then a diesel fuel is injected and combusted together. The system may include: a plurality of cylinders each having a fuel injector; and an exhaust line through which flows an exhaust gas discharged as a fuel from each cylinder is combusted; wherein gasoline fuel combustion type is adapted to one or more cylinder of the plurality of the cylinders, and diesel-gasoline fuel pre-mixed combustion type is adapted to the other cylinders.