Abstract: A high speed closing switch in a power distributor includes: a case forming an external appearance; a first electrode provided within the case and including a through hole; a second electrode having a receiving recess facing the through hole; a moving contact point member having a cylindrical portion received in the through hole so as to be put into the receiving recess and a flange portion formed at one end of the cylindrical portion; and a closing coil wound on a base of the case, wherein a damping hole is formed at receiving recess of the second electrode. When the moving contact point member put into the receiving recess approaches its final position, a damping force is applied to the moving contact point member to stably and accurately control the final position.

Abstract: Methods of manufacturing a semiconductor device including a multi-layer of dielectric layers may include forming a metal oxide layer on a semiconductor substrate and forming a multi-layer of silicate layers including metal atoms and silicon atoms, on the metal oxide layer. The multi-layer of silicate layers may include at least two metallic silicate layers having different silicon concentrations, which are a ratio of silicon atoms among all metal atoms and silicon atoms included in the metallic silicate layer.

Abstract: An apparatus for quickly determining a fault in an electric power system includes a current transformer, a current determination unit and a fault determination unit. The current transformer detects current supplied to the electric power system and outputs a current detection voltage. The current determination unit respectively compares the current detection voltage, the first-order differential voltage of the current detection voltage and the second-order differential voltage of the current detection voltage with predetermined first, second and third reference voltages. The fault determination unit determines whether a fault occurs based on the compared result of the current determination unit and generates a trip signal when it is determined that the fault has occurred.

Abstract: An apparatus and a method form a thin layer on each of multiple semiconductor substrates. A processing chamber of the apparatus includes a boat in which the semiconductor substrates are arranged in a vertical direction. A vaporizer vaporizes a liquid metal precursor into a metal precursor gas. A buffer receives a source gas from the vaporizer and increases a pressure of the source gas to higher than atmospheric pressure, the source gas including the metal precursor gas. A first supply pipe connects the buffer and the processing chamber, the first supply pipe including a first valve for controlling a mass flow rate of the source gas. A second supply pipe connects the vaporizer and a pump for creating a vacuum inside the processing chamber, the second supply pipe including a second valve for exhausting a dummy gas during an idling operation of the vaporizer.

Abstract: A high speed closing switch in a power distributor includes: a case forming an external appearance; a first electrode provided within the case and including a through hole; a second electrode having a receiving recess facing the through hole; a moving contact point member having a cylindrical portion received in the through hole so as to be put into the receiving recess and a flange portion formed at one end of the cylindrical portion; and a closing coil wound on a base of the case, wherein a damping hole is formed at receiving recess of the second electrode. When the moving contact point member put into the receiving recess approaches its final position, a damping force is applied to the moving contact point member to stably and accurately control the final position.

Abstract: A surface treatment system is disclosed to form a deposition layer at a surface of an object of surface treatment by using a deposition reaction in which an electrode (110) for applying power to form a deposition reaction in the deposition chamber (100) is installed between an inner wall (120) of the deposition chamber (100) and an object of surface treatment (900) and further includes a cooling unit (200) installed at the inner wall (120) of the deposition chamber (100) facing the electrode (110) and cooling ambient thereof.

Abstract: A spin scrubber apparatus has an index unit configured to support one or more cassettes, a processing unit having one or more cleaning stations facing the index unit across a transfer space, and a substrate transfer device disposed in the transfer space for transferring substrates one-by-one between the index unit and the processing unit. The transfer device includes a transfer block, and an index arm and a transfer arm unit supported by the transfer block. The transfer block is movable in the transfer space to position the index arm or the transfer arm unit in front of a cassette or a spin scrubber. The index arm loads/unloads substrates into/from a cassette mounted to the index unit. The transfer arm loads/unloads substrates into/from the processing unit. All of the movement takes place in the transfer space. Thus, the apparatus is compact, and it takes relatively little time to clean the substrates.

Abstract: Disclosed are a surface treatment system that includes a deposition chamber (100) for forming a deposition layer at a surface of an object of surface treatment (900); a carrier (910) for carrying the object of surface treatment (900) by mounting thereon, and a power applying unit (230) for forming a deposition reaction by applying a power to the object in the deposition chamber (100), wherein the power applying unit (230) includes a fixed power applying unit (220) installed in the deposition chamber (100) and connected to an external power source (210); and a movable power applying unit (230) installed at the carrier (910) for being electrically connected to the fixed power applying unit (220) movably as the carrier on which the object of surface treatment (900) is mounted goes into the deposition chamber and thereby applying a power to the object of surface treatment mounted on the carrier by contacting thereto.

Abstract: An apparatus and a method form a thin layer on each of multiple semiconductor substrates. A processing chamber of the apparatus includes a boat in which the semiconductor substrates are arranged in a vertical direction. A vaporizer vaporizes a liquid metal precursor into a metal precursor gas. A buffer receives a source gas from the vaporizer and increases a pressure of the source gas to higher than atmospheric pressure, the source gas including the metal precursor gas. A first supply pipe connects the buffer and the processing chamber, the first supply pipe including a first valve for controlling a mass flow rate of the source gas. A second supply pipe connects the vaporizer and a pump for creating a vacuum inside the processing chamber, the second supply pipe including a second valve for exhausting a dummy gas during an idling operation of the vaporizer.

Abstract: The present invention provides methods and apparatus for evaporating a metal oxide layer precursor, including charging a liquid precursor, spraying the charged liquid precursor to form minute droplets; and vaporizing a solvent from the minute droplets. Methods of forming a dielectric layer are also provided.

Abstract: A reaction gas supplying comprising an MFC and adapted to sense when there is an error in the MFC, and a related method are disclosed. The reaction gas supplying device comprises a gas supply line disposed between a process chamber and a gas supplying element, a mass flow controller adapted to control a supply amount and a supply time of a gas, and a digital pressure gauge adapted to measure the pressure of the gas. The device further comprises a database, and a controller adapted to generate and output a first flow rate control signal, compare the measured pressure value of the gas with a standard pressure value stored in the database corresponding to the first flow rate control signal, and output an alarm generation control signal when the measured pressure value of the gas is outside of a set error range around the standard pressure value.

Abstract: A surface treatment system in which gas for a deposition reaction is injected into a deposition chamber and power is applied to form a deposition reaction to form a deposition layer at a surface of an object or surface treatment, wherein the deposition chamber has a plurality of deposition spaces disposed in parallel and a convey unit for conveying one or more objects of surface treatment to each deposition space or discharging the objects of surface treatment from each deposition space after a deposition reaction.

Abstract: A heat exchanger for a dryer includes a plurality of tubes for circulating wet air and a plurality of fin structures for circulating external air which are alternately laminated together to form the heat exchanger. The fin structure includes a plurality of air passages formed by repeatedly bending a flat-type metal plate in a zigzag form. A plurality of fins are formed on side surfaces of the air passages. The fins protrude from the side surfaces of the air passages at an inclination angle. The fins are formed by partially cutting the plate forming the side surfaces of the air passages, and by the bending the cut portions of the plate into the air passages to from the fins. A heat transfer area and a heat transfer efficiency are increased, thereby enhancing a drying efficiency of a dryer having the heat exchanger.

Abstract: A spin scrubber apparatus has an index unit configured to support one or more cassettes, a processing unit having one or more cleaning stations facing the index unit across a transfer space, and a substrate transfer device disposed in the transfer space for transferring substrates one-by-one between the index unit and the processing unit. The transfer device includes a transfer block, and an index arm and a transfer arm unit supported by the transfer block. The transfer block is movable in the transfer space to position the index arm or the transfer arm unit in front of a cassette or a spin scrubber. The index arm loads/unloads substrates into/from a cassette mounted to the index unit. The transfer arm loads/unloads substrates into/from the processing unit. All of the movement takes place in the transfer space. Thus, the apparatus is compact, and it takes relatively little time to clean the substrates.

Abstract: In a gas supplying apparatus used to form a layer on a substrate, a liquid reactant is introduced into an atomizer through a liquid mass flow controller and an on-off valve. An aerosol mist formed by the atomizer is introduced into a vaporizer and then vaporized. The on-off valve is coupled with the atomizer and controlled by a valve controller of the liquid mass flow controller. The on-off valve is opened to form the layer and closed during downtime of a layer formation apparatus to prevent leakage of the remaining liquid reactant in a connecting conduit between the liquid mass flow controller and the on-off valve.

Abstract: A surface treatment system in which gas for a deposition reaction is injected into a deposition chamber and power is applied to form a deposition reaction to form a deposition layer at a surface of an object or surface treatment, wherein the deposition chamber has a plurality of deposition spaces disposed in parallel and a convey unit for conveying one or more objects of surface treatment to each deposition space or discharging the objects of surface treatment from each deposition space after a deposition reaction.