Abstract: A capacitive type touch screen device according to an exemplary embodiment of the present invention includes a plurality of driving electrodes and a plurality of sensing electrodes overlapped with the plurality of driving electrodes, at least one driving electrode includes a plurality of cells and a plurality of connecting lines, and the plurality of cells are mutually connected through the plurality of connecting lines.

Abstract: Disclosed are a sensor for measuring a tilt angle based on electronic textile according to the present invention and a method thereof. A sensor for measuring a tilt angle based on electronic textile according to the present invention includes a plurality of textile electrodes disposed at predetermined uniform intervals on a textile surface; a textile conductive wire of which one end is connected to a center between the plurality of textile electrodes; and a metal bead connected to another end of the textile conductive wire to thereby be connected to the textile surface.

Abstract: According to example embodiments, a field effect transistor includes a graphene channel layer on a substrate. The graphene channel layer defines a slit. A source electrode and a drain electrode are spaced apart from each other and arranged to apply voltages to the graphene channel layer. A gate insulation layer is between the graphene channel layer and a gate electrode.

Abstract: A method and apparatus for estimating a channel in a frequency domain are provided. The apparatus acquires frequency selectivity information using a cell-specific reference signal, selects a channel estimation scheme using a user specific reference signal according to the acquired frequency selectivity information, and estimates a frequency channel using the selected channel estimation scheme. Accordingly, more accurate channel estimation with respect to a region to which a physical downstream shared channel is allocated can be performed.

Abstract: In a semiconductor device including graphene, a gate insulating layer may be formed between a gate electrode and a graphene layer, and an interlayer insulating layer may be formed under a portion of the graphene layer under which the gate insulating layer is not formed. The gate insulating layer may include a material that has higher dielectric permittivity than the interlayer insulating layer.

Abstract: Graphene electronic devices may include a gate electrode on a substrate, a first gate insulating film covering the gate electrode, a plurality of graphene channel layers on the substrate, a second gate insulating film between the plurality of graphene channel layers, and a source electrode and a drain electrode connected to both edges of each of the plurality of graphene channel layers.

Abstract: In a semiconductor device including graphene, a gate insulating layer may be formed between a gate electrode and a graphene layer, and an interlayer insulating layer may be formed under a portion of the graphene layer under which the gate insulating layer is not formed. The gate insulating layer may include a material that has higher dielectric permittivity than the interlayer insulating layer.

Abstract: A switched capacitor integrator circuit is disclosed. The switched capacitor integrator circuit comprises an inverting switched capacitor integrator circuit, and a non-inverting switched capacitor integrator circuit connected to the inverting switched capacitor integrator circuit. A sampling capacitor of the inverting switched capacitor integrator circuit is shared by the non-inverting switched capacitor integrator circuit.

Abstract: According to the present invention, a charging and discharging circuit is electrically connected to an operation signal line and a detection signal line, and repeats a charging and discharging operation of a node capacitor. The present invention also includes an integration capacitor electrically connected to the detection signal line and an integration circuit charging the integration capacitor to a unit charging voltage every charging and discharging operation of the node capacitor such that the integration capacitor is charged to a first voltage that is integrated according to a charging and discharging number. The integration circuit may include a reset switch electrically connected to the integration capacitor and discharging the first voltage integrated and charged to the integration capacitor for initializing.

Abstract: A method and apparatus for estimating a channel in a frequency domain are provided. The apparatus acquires frequency selectivity information using a cell-specific reference signal, selects a channel estimation scheme using a user specific reference signal according to the acquired frequency selectivity information, and estimates a frequency channel using the selected channel estimation scheme. Accordingly, more accurate channel estimation with respect to a region to which a physical downstream shared channel is allocated can be performed.

Abstract: A touch sensor includes a plurality of operation patterns arranged in a first axis direction and supplied with a voltage, a dielectric material layer formed over the plurality of operation patterns, and a plurality of sense patterns formed over the dielectric material layer and arranged in a second axis direction to cross the first axis direction. At least one of the plurality of sense patterns has a parallel structure in which the sense pattern is separated into two or more lines, and the separated sense patterns are recombined once or more. A touch screen having a low resistance value can be obtained.

Abstract: A semiconductor probe with a high-resolution tip and a method of fabricating the same are provided. The semiconductor probe includes: a cantilever doped with a first impurity; a resistive convex portion projecting from an end portion of the cantilever and lightly doped with a second impurity opposite in polarity to the first impurity; and first and second electrode regions formed on either side of the resistive convex portion and heavily doped with the second impurity.

Abstract: The present invention relates to a method of transmitting/receiving random access response information in a radio communication system, and a base station and a terminal thereof. According to the invention, in a case where a base station of a radio communication system transmits response information for random access processing requested from terminals, the base station determines whether to transmit non-contention-based response information and contention-based response information for each of one or more terminals, which requests random access, by one radio resource. When determining to be transmitted by one radio resource, the base station transmits the random access response information configured by the non-contention-based response information and the contention-based response information for each of one or more terminals.

Abstract: Provided is a method for allocating radio resources in a mobile telecommunication system. The method for allocating a downlink radio resource in a base station includes retrieving a downlink radio resource allocated to a first mobile terminal if the first mobile terminal does not have a downlink packet, continuously checking whether or not there is a new downlink packet for the first mobile terminal, and retrieving a radio resource allocated to a second mobile terminal if there is a new downlink packet for the first mobile terminal and reallocating the retrieved radio resource to the first mobile terminal.

Abstract: A semiconductor probe having an embossed resistive tip and a method of fabricating the semiconductor probe are provided. The semiconductor probe includes a protrusion portion protruded to a predetermined height on a cantilever in a first direction crossing a length direction of the cantilever, an embossed resistive tip formed on the protrusion portion, and first and second semiconductor electrode regions formed at opposite sides of the embossed resistive tip at the protrusion portion, wherein the cantilever is doped with a first dopant, the first and second semiconductor electrode regions and the embossed resistive tip are doped with a second dopant having a different polarity from the first dopant, and the embossed resistive tip is doped with a concentration lower than the first and second semiconductor electrode regions.

Abstract: Service continuity is provided between a 3GPP network and a non-3GPP network. When a mobile station having accepted service in the 3GPP network moves to the non-3GPP network or returns from the non-3GPP network to the 3GPP network, an interworking gateway is interworked with a GGSN through a universal tunnel using a packet data network, and accordingly a mobile subscriber may accept seamless service.

Abstract: A semiconductor probe and a method of fabricating the same are provided. The semiconductor probe includes a cantilever doped with first impurities, a resistive tip which protrudes from an end of the cantilever and doped lightly with second impurities, doping control layers formed on both sides of a protruding portion of the resistive tip, and first and second electrode regions formed under the doping control layers and doped heavily with the second impurities.

Abstract: The present invention discloses a gateway and a terminal negotiating a QoS in a network interworking system. The terminal negotiates a QoS with a WLAN access point and establishes a WLAN access bearer. In addition, the terminal negotiates a QoS with the gateway for packet exchange through the WLAN access bearer. The gateway accepts a QoS according to a QoS of an external bearer, and the terminal and the gateway establish an I-WLAN bearer. Subsequently, the terminal negotiates a QoS with the gateway for packet exchange with an end terminal through the I-WLAN bearer. The gateway accepts the QoS depending on available resources of the external and I-WLAN bearers, and the terminal and the gateway establish an IP bearer.

Abstract: A 3GPP-WLAN interworking system to which WLAN user equipment is accessed includes a WLAN access network including a WLAN access point, a 3GPP packet-switched service network including terminal equipment, a 3GPP core network connecting the WLAN access network and the 3GPP packet-switched service network, and a packet data gateway relaying the 3GPP core network and the 3GPP packet-switched service network. The WLAN user equipment negotiates a QoS according to a wireless environment with the WLAN access point to generate a WLAN bearer, negotiates a QoS according to a type of user data with the packet data gateway to generate a WLAN 3GPP IP access bearer, and negotiates a QoS according to data process performance of the terminal equipment with the terminal equipment to generate an end-to-end bearer.

Abstract: A semiconductor probe with a resistive tip and a method of fabricating the semiconductor probe. The resistive tip doped with a first impurity includes a resistive region formed at a peak thereof and lightly doped with a second impurity opposite in polarity to the first impurity, and first and second semiconductor regions formed on sloped sides thereof and heavily doped with the second impurity. The semiconductor probe includes the resistive tip, a cantilever having an end on which the resistive tip is disposed, a dielectric layer disposed on the cantilever and covering the resistive region, and a metal shield disposed on the dielectric layer and having an opening formed at a position corresponding to the resistive region.