Abstract: Provided is a method for detecting the degree of toxicity of toxic materials within a sample. The method includes contacting sub-mitochondrial particles having competent mitochondrial enzyme formed from the inner membranes of mitochondria, an electron donor which transmits electrons to the electron transfer system of the sub-mitochondrial particles, and a sample which will be tested; adding tris-2,2?-bipyridyl-ruthenium (II) ion to the reaction mixture; and measuring electrical variables of the reaction mixture. Also, provided is an apparatus and kit for detecting the presence of toxic materials within a sample.

Abstract: A surface mounted resonator having a cap means and a method of forming the same using an insulating ceramic substrate are provided, which can simplify a process of fabricating the surface mounted resonator.

Abstract: A pneumatic micro electro mechanical system switch includes a substrate, a pneumatic actuating unit disposed on the substrate; the pneumatic actuating unit having a plurality of variable air cavities communicating such that when one of the plurality of variable air cavities is compressed, the rest are expanded; a signal line having a plurality of switching lines, each of which passes through a corresponding one of the plurality of variable air cavities and has switching ends disposed in a spaced-apart relation with each other in the corresponding one of the plurality of variable air cavities; a movable switching unit to connect the first and the second switching ends of each of the plurality of switching lines if one of the plurality of variable air cavities is compressed; and a driving unit to drive the pneumatic actuating unit so as to selectively compress the plurality of variable air cavities.

Abstract: A coupled resonator filter and a method of fabricating the coupled resonator filter are provided. The method includes: sequentially stacking a first electrode, a first piezoelectric layer, a second electrode, an insulating layer, a third electrode, a second piezoelectric layer, and a fourth electrode on a surface of a substrate; sequentially patterning the first electrode, the first piezoelectric layer, the second electrode, the insulating layer, the third electrode, the second piezoelectric layer, and the fourth electrode to expose areas of the first, second, and third electrodes; forming a plurality of connection electrodes respectively connected to the exposed areas of the first, second, and third electrodes and an area of the fourth electrode; and etching an area of the substrate underneath the first electrode to form an air gap.

Abstract: An inductor integrated chip and fabrication method thereof is provided. The inductor integrated chip includes a wafer; an inductor bonded on a surface of the wafer; a circuit element formed on the surface of the wafer and coupled to a first end of the inductor; a packaging wafer connected to the surface of the wafer and packaging the inductor and the circuit element; and a connecting electrode formed on the packaging wafer and connected to a second end of the inductor. The method includes forming an inductor and a circuit element on a surface of a wafer, wherein the circuit element is coupled to a first end of the inductor; forming a connecting electrode on a packaging wafer; and packaging the inductor and the circuit element by joining the wafer and the packaging wafer so as to connect the connecting electrode with a second end of the inductor.

Abstract: A method of fabricating an inkjet printhead.

Abstract: A method of fabricating inkjet print heads usable in an ink jet printer. The method of fabricating ink jet print heads includes preparing a plurality of ink jet print heads on a wafer while forming sub sidewalls around the ink jet print heads when the ink jet print heads are being prepared, attaching protection films onto the sub sidewalls of the wafer and the ink jet print heads, and dicing the ink jet print heads and detaching the individual ink jet print heads from the wafer. In the method, the ink jet print heads are diced in a wafer unit. Particularly, connect pads of the ink jet print heads can be prevented from being contaminated by the protection films.

Abstract: Provided is a thermal inkjet printhead. The inkjet printhead includes a substrate; an insulating layer formed on the substrate; a heater formed on the insulating layer and an electrode to apply current to the heater; a chamber layer that is stacked on the insulating layer and includes an ink chamber; a nozzle layer that is stacked on the chamber layer and includes a nozzle; and at least a heat transfer layer that is formed inside the insulating layer and dissipates heat generated in by the heater toward the substrate.

Abstract: A heater to control an ink bubble, and an inkjet printhead having the heater. The heater has different resistances according to portions thereof.

Abstract: The present invention relates to a display device. The display device according to the present invention includes a first display panel for displaying an image in a first display direction, a second display panel for displaying an image in a second display direction that is substantially opposite to the first display direction, and a supporting frame for supporting the first display panel and the second display panel. The first display panel and the second display panel are arranged such that an imaginary line orthogonal to a display surface of the first display panel does not pass through the second display panel. The invention allows a multiple-display-panel device, such as a flip-type cellular phone, to be more compact.

Abstract: Method for fabricating a gyroscope including: fabricating a SMS wafer where a first wafer, a metal film, and a second wafer are sequentially stacked; forming a cantilever or a bridge shaped-structure on the relevant portion of the first wafer through the photolithography process; attaching to the surface of the first wafer, a first cap made of glass and having a predetermined space for sealing the movable structure in a vacuum state; separating and removing the metal film and the second wafer from the first wafer; and attaching to the backside of the first wafer, the second cap which is structurally and materially symmetric to the first cap. The SMS wafer is fabricated by depositing the metal film on the second wafer and bonding the first wafer on the metal film using metal paste or material of polymer series. With lower material costs, improvements in performance and characteristics can be achieved.

Abstract: A MEMS (micro electro mechanical system) switch, which includes a substrate; a fixed electrode formed on an upper side of the substrate; a signal line formed on both sides of the fixed electrode; a contact member formed on an upper side of the signal line at a distance from said fixed electrode and contacting an edging portion of the signal line; a supporting member supporting the contact member to be movable; and a moving electrode disposed on an upper side of the supporting member.

Abstract: A silicon-on-insulator (SOI) substrate including laminated layers of a substrate, an oxide layer, and a silicon layer in order. The oxide layer has an electrifying hole fluidly connected with the substrate and the electrifying hole is filled with a part of the silicon layer. A method for fabricating the floating structure is also disclosed which includes the steps of forming an oxide layer having a predetermined thickness on a substrate, forming one or more electrifying holes in an area of the oxide layer corresponding to an inner part of the floating structure, forming a silicon layer on the oxide layer including an electrification structure electrically connecting the silicon layer to the substrate, forming a pattern for the floating structure on the silicon layer, removing the oxide layer corresponding to an inner area of the pattern, forming a thermal oxide layer on a surface of the silicon layer, and removing the thermal oxide layer to form the floating structure.

Abstract: An optical bench is provided, as are a thin optical pickup that employs the optical bench, and a method of manufacturing the optical bench. The optical bench includes a light source for generating light for recording and reproducing information to and from an optical disc, a light source stand on which the light source is mounted, a mirror adjacent to the light source stand, and a bottom surface at a lower point than the light source stand and between the light source stand and the mirror surface. Sides of the light source stand besides the side facing the mirror are connected to the surface of the substrate by a flat sloped surface. Along the sloped surface, two electrodes for supplying power to the light source are connected to the light source stand. Since the metal wirings are formed along the sloped surface without trenches or windings between the light source stand and the silicon substrate, no disconnection of metal lines at a corner occurs.

Abstract: A method and apparatus for vacuum-mounting at least one micro electro mechanical system (MEMS) on a substrate includes a gas injecting section for injecting an inert gas into a vacuum chamber; a substrate aligning section for aligning a semiconductor substrate and a cover, the cover having a cavity formed therein and a getter attached to an interior surface of the cavity; a bonding section for bonding the semiconductor substrate and the cover together; and a controlling section for controlling the substrate aligning section to align the semiconductor and the cover, for controlling the gas injecting section to inject the inert gas into the vacuum chamber, and for controlling the bonding section to bond the semiconductor substrate and the cover together after the inert gas is injected.

Abstract: A fuse box of a semiconductor device is provided. More specifically, provided is a device of forming a uniformly residual oxide film by rearranging fuse boxes in consideration of an etching ratio depending on plasma density of the semiconductor device to prevent a fuse attack. During a repair etching process to open a fuse box in a chip, an etching loading effect is evenly reflected depending on pattern density of the fuse box so that the residual oxide film is regularly distributed in each fuse of all fuse boxes regardless of the size of an open region. As a result, the fuse attack resulting from an excessive etching process on the oxide film on a small fuse is prevented in fuse blowing to improve yield of FTA (Fixed To Attempt) yield.

Abstract: Disclosed is a method for forming a plurality of metal structures having different heights on a semiconductor substrate. The disclosed method for manufacturing a metal structure having different heights includes: forming a plurality of seed layers, to have heights corresponding to the metal structure to be formed, on a semiconductor substrate so that those layers can be electrically separated, performing a plating process using a plating mold, and applying different currents to the respective seed layers so that the plating thickness can be adjusted for each of the seed layers. Accordingly, a plurality of metal structures having different heights can be obtained by a plating mold forming process and a plating process that are performed just once, respectively.

Abstract: Provided is a method of sensing biomolecules using a bioFET, the method including: forming a layer including Au on a gate of the bioFET; forming a probe immobilized on a substrate separated from the gate by a predetermined distance, and a biomolecule having a thiol group (—SH) which is incompletely bonded to the probe; reacting the probe with a sample including a target molecule; and measuring a current flowing in a channel region between a source and a drain of the bioFET.

Abstract: A tri-state RF MEMS switch includes: a first well formed in a first substrate; a first input signal line and a first output signal line forming a first gap therebetween in the first well; a post bar forming a boundary between the second well and third well in the second substrate; a second input signal line and a second output signal line, and a third input signal line and a third output signal line forming a second gap and a third gap in the second well and the third well, respectively; and a membrane disposed between the first substrate and the second substrate such that the membrane crosses the first, second and third gaps, the membrane including a first conductive pad, a second conductive pad, and a third conductive pad thereon to face the first, second and third gaps, respectively.

Abstract: Disclosed is a method for forming a capacitor of a semiconductor device capable of improving the film quality of a dielectric film. The method includes the steps of providing a semiconductor substrate having a storage node contact; forming a metal storage electrode on the substrate; forming a dielectric film using any one chosen from a group including a single film made of HfO2, a single film made of Al2O3, and a lamination film made of HfO2 and Al2O3 on the metal storage electrode; performing CF4 plasma treatment on the dielectric film; and forming a metal plate electrode on the dielectric film.