Abstract: A method of manufacturing a semiconductor device having a storage electrode of a capacitor is provided. The method includes the steps of: forming a contact hole perforating through an interlayer dielectric layer on a semiconductor substrate; forming a conductive plug to fill the contact hole and expose the surface of the interlayer dielectric layer; forming molds on the interlayer dielectric layer to expose the surface of the conductive plug; recessing the upper surface of the conductive plug to expose a portion of the sidewalls of the interlayer dielectric layer; forming an electrode layer to cover the recessed conductive plug, and the sidewalls of the interlayer dielectric layer and the molds; and removing upper surfaces of the electrode layer to make a storage electrode until molds are exposed.

Abstract: A cleaning method for a semiconductor substrate including placing the semiconductor substrate into a cleaning chamber and injecting ozone gas (O3) into the cleaning chamber. This process operates to cleanse the semiconductor substrate without corrosion or etching of the semiconductor substrate; even when the substrate has metal layer made of tungsten.

Abstract: An apparatus for cleaning a semiconductor wafer includes a cleaning reaction chamber wherein the cleaning process is performed in a closed state, a wafer conveyor having wafer supporters for loading semiconductor onto a loading unit within the reaction chamber, at least one cleaning gas supply unit for supplying at least one cleaning solution in a vapor state into the reaction chamber, a water vaporizing unit for supplying vapor onto the semiconductor wafers, an ozone supply unit for supplying ozone gas into the reaction chamber, and a reaction gas exhaustion unit connected to the reaction chamber in order to exhaust the cleaning gas from the reaction chamber. The cleaning of the semiconductor wafers by adding cleaning gas and ozone gas into a reaction chamber easily removes any remaining photoresist that formed on the semiconductor wafers and any other contaminates from pre-processes.

Abstract: A wet process performed in the manufacture of semiconductor devices with cathode water and anode water produced from electrolyte using a 3-cell electrolyzer having an intermediate cell for the electrolyte. The 3-cell electrolyzer includes an anode cell, a cathode cell, and an intermediate cell between the anode and cathode cells, which are partitioned by ion exchange membranes. Deionized water is supplied into the anode and cathode cells, and the intermediate cell is filled with an electrolytic aqueous solution to perform electrolysis. The anode water containing oxidative substances or the cathode water containing reductive substances, which are produced by the electrolysis process, are used in the wet process.

Abstract: The surface of a semiconductor wafer is cleaned simultaneously using diluted hydrofluoric acid and electrolytic ionized water. The electrolytic ionized water is produced using an electrolyte supplied into an intermediate cell of a 3-cell electrolyzer. The 3-cell electrolyzer has an anode cell, the intermediate cell, and a cathode cell partitioned from one another by ion exchange membranes. After deionized water is supplied into the anode cell and the cathode cell and the intermediate cell is filled with an electrolytic aqueous solution, electrolysis is carried out to produce electrolytic ionized water. The electrolytic ionized water and the hydrofluoric acid solution are then supplied to one or more semiconductor wafer cleaning apparatus. The simultaneous use of the electrolytic ionized water and the diluted hydrofluoric acid offers an improvement in removing contaminants from the surface of the wafer without damaging an insulating layer or a metal layer exposed at the surface of the semiconductor wafer.

Abstract: A method of manufacturing a semiconductor device having a storage electrode of a capacitor is provided. The method includes the steps of: forming a contact hole perforating through an interlayer dielectric layer on a semiconductor substrate; forming a conductive plug to fill the contact hole and expose the surface of the interlayer dielectric layer; forming molds on the interlayer dielectric layer to expose the surface of the conductive plug; recessing the upper surface of the conductive plug to expose a portion of the sidewalls of the interlayer dielectric layer; forming an electrode layer to cover the recessed conductive plug, and the sidewalls of the interlayer dielectric layer and the molds; and removing upper surfaces of the electrode layer to make a storage electrode until molds are exposed.

Abstract: A wet process performed in the manufacture of semiconductor devices with cathode water and anode water produced from electrolyte using a 3-cell electrolyzer having an intermediate cell for the electrolyte. The 3-cell electrolyzer includes an anode cell, a cathode cell, and an intermediate cell between the anode and cathode cells, which are partitioned by ion exchange membranes. Deionized water is supplied into the anode and cathode cells, and the intermediate cell is filled with an electrolytic aqueous solution to perform electrolysis. The anode water containing oxidative substances or the cathode water containing reductive substances, which are produced by the electrolysis process, are used in the wet process.