Patents by Inventor Hyung Jin Jung

Hyung Jin Jung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20030052318
    Abstract: The present invention relates to a fabrication method of blue light emitting ZnO thin film phosphor. More particularly, the invention relates to a fabrication method of blue light emitting ZnO thin film phosphor simply by heat treatment without making Al-added alloy.
    Type: Application
    Filed: November 20, 2001
    Publication date: March 20, 2003
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Won Kook Choi, Hyung Jin Jung
  • Publication number: 20030042129
    Abstract: According to the present invention, there is provided a plasma polymerization surface modification of a metal for enhancing its applicability for use in refrigerating and air conditioning such as in constructing heat exchanges, by using a DC discharge plasma, comprising the steps of: (a) positioning an anode electrode which is substantially of metal to be surface-modified and a cathode electrode in a chamber, (b) maintaining a pressure in the chamber at a predetermined vacuum level, (c) blowing a reaction gas composed of an unsaturated aliphatic hydrocarbon monomer gas or fluorine-containing monomer and silicon containing monomer gas at a predetermined pressure and a non-polymerizable gas at a predetermined pressure into the chamber, and (d) applying a voltage to the electrodes in order to obtain a DC discharge, whereby to obtain a plasma consisting of positive and negative ions and radicals generated from the unsaturated aliphatic hydrocarbon monomer gas and the non-polymerizable gas, and then forming a poly
    Type: Application
    Filed: July 3, 2002
    Publication date: March 6, 2003
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Seok-Keun Koh, Hyung Jin Jung, Won Kook Choi, Byung Ha Kang, Ki Hwan Kim, Sam Chul Ha, Cheol Hwan Kim, Sung-Chang Choi
  • Publication number: 20030000825
    Abstract: According to the present invention, there is provided a plasma polymerization surface modification of a metal for enhancing its applicability for use in refrigerating and air conditioning such as in constructing heat exchanges, by using a DC discharge plasma, comprising the steps of: (a) positioning an anode electrode which is substantially of metal to be surface-modified and a cathode electrode in a chamber, (b) maintaining a pressure in the chamber at a predetermined vacuum level, (c) blowing a reaction gas composed of an unsaturated aliphatic hydrocarbon monomer gas or fluorine-containing monomer and silicon containing monomer gas at a predetermined pressure and a non-polymerizable gas at a predetermined pressure into the chamber, and (d) applying a voltage to the electrodes in order to obtain a DC discharge, whereby to obtain a plasma consisting of positive and negative ions and radicals generated from the unsaturated aliphatic hydrocarbon monomer gas and the non-polymerizable gas, and then forming a poly
    Type: Application
    Filed: July 3, 2002
    Publication date: January 2, 2003
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Seok-Keun Koh, Hyung Jin Jung, Won Kook Choi, Byung Ha Kang, Ki Hwan Kim, Sam Chul Ha, Cheol Hwan Kim, Sung-Chang Choi
  • Publication number: 20020189931
    Abstract: According to the present invention, there is provided a plasma polymerization surface modification of a metal for enhancing its applicability for use in refrigerating and air conditioning such as in constructing heat exchanges, by using a DC discharge plasma, comprising the steps of: (a) positioning an anode electrode which is substantially of metal to be surface-modified and a cathode electrode in a chamber, (b) maintaining a pressure in the chamber at a predetermined vacuum level, (c) blowing a reaction gas composed of an unsaturated aliphatic hydrocarbon monomer gas or fluorine-containing monomer and silicon containing monomer gas at a predetermined pressure and a non-polymerizable gas at a predetermined pressure into the chamber, and (d) applying a voltage to the electrodes in order to obtain a DC discharge, whereby to obtain a plasma consisting of positive and negative ions and radicals generated from the unsaturated aliphatic hydrocarbon monomer gas and the non-polymerizable gas, and then forming a poly
    Type: Application
    Filed: July 3, 2002
    Publication date: December 19, 2002
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Seok-Keun Koh, Hyung Jin Jung, Won Kook Choi, Byung Ha Kang, Ki Hwan Kim, Sam Chul Ha, Cheol Hwan Kim, Sung-Chang Choi
  • Patent number: 6495283
    Abstract: The present invention relates to a battery having a trench structure which can increase an effective area per unit area, and a fabrication method therefor. The battery according to the present invention forms trenches on thin film elements including a substrate, thereby increasing a contact interface between a cathode and an electrolyte and between the electrolyte and an anode, and simultaneously increasing an amount of an electrode per unit area. As a result, the present invention provides a high performance battery that a current density and a total current storage density are increased, and a charging speed after discharge is improved. The trench structure of the present invention can adapt to a bulk battery as well as a thin film battery.
    Type: Grant
    Filed: February 11, 2000
    Date of Patent: December 17, 2002
    Assignee: Korea Institute of Science and Technology
    Inventors: Young Soo Yoon, Won Il Cho, Byung Won Cho, Hyung Jin Jung, Young Hwa Shin
  • Publication number: 20020171182
    Abstract: A high density ceramic thick film is fabricated by providing vehicle comprising an organic binder and solvent, dispersing ceramic powders into the vehicle to be paste, forming the paste to thick film by screen printing, removing the organic binder from the film, applying sol or sol-like solution to the surface of the film so that the sol or sol-like solution can infiltrate into the film, removing remaining sol or sol-like solution from the surface of the film, drying and preheating the film, and sintering the film.
    Type: Application
    Filed: April 4, 2002
    Publication date: November 21, 2002
    Inventors: Tae-Song Kim, Yong-Bum Kim, Hyung-Jin Jung
  • Publication number: 20020167105
    Abstract: The vacuum insulator in accordance with the present invention comprises glass white wool body which density is 0.1˜0.5 g/cm3 in density and is below 0.0023 kcal/mh° C. in thermal conductivity, and a non permeable container surrounding the body in which the pressure is between 10−6 ˜10−1 torr. The vacuum insulator is fabricated by piling up glass white wool, thermal-pressutizing the piled glass white wool to form a body of 0.1˜0.5 g/cm3 in density wherein the pressurizing is done at 0.007˜1.5 kg/cm2 and under 20° C. for more than 10 minutes, putting the body in the non-permeable container, and producing a vacuum in the container.
    Type: Application
    Filed: April 4, 2002
    Publication date: November 14, 2002
    Inventors: Hyung-Jin Jung, Goo-Dae Kim, No-Kyung Park, Yong-Gyu Shin, Sung-Ho Yoon, Sung-Kyu Lee
  • Publication number: 20020074900
    Abstract: The present invention relates to a ring-type piezoelectric ultrasonic motor that is different from the electro-magnetically driven conventional motors and that has applications in robots and automation equipments. More specifically, the present invention relates to a ring-type piezoelectric ultrasonic motor that is driven by a frictional force between rotor and stator, and stator is produced a mechanical displacement by a piezoelectric ceramics applying an alternate electric field with an ultrasonic frequency (above 16 kHz).
    Type: Application
    Filed: September 21, 2001
    Publication date: June 20, 2002
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Seok Jin Yoon, Hyun Jai Kim, Hyung Jin Jung, Piotr Vasiljev
  • Patent number: 6358378
    Abstract: An economical method of fabricating a high quality ZnO thin film with only NBE and without any deep-level emission at room temperature in order to replace conventional III-V group compounds such as GaN, and an apparatus therefor. The method comprises the steps of introducing argon (Ar) and oxygen (O2) into a vacuum chamber while maintaining a vacuum level of 1-100 mTorr in the vacuum chamber, preheating a substrate, depositing a ZnO monocrystal thin film on the substrate by RF magnetron sputtering while introducing carbon(C) or nitrogen (N) atoms from an atomic radical source installed over the substrate, and slowly cooling the substrate while maintaining a partial pressure of oxygen in the vacuum chamber at a partial pressure level used while depositing the ZnO thin film.
    Type: Grant
    Filed: January 24, 2001
    Date of Patent: March 19, 2002
    Assignee: Korea Institute of Science and Technology
    Inventors: Won Kook Choi, Hyung Jin Jung, Kyeong Kook Kim, Young Soo Yoon, Jong Han Song
  • Publication number: 20020014597
    Abstract: An apparatus for surface modification of a polymer, metal and ceramic material using an ion beam (IB) is disclosed, which is capable of supplying and controlling a voltage (220) applied to a material to be surface-modified so that an ion beam (IB) energy irradiated to the material is controlled, differentiating the degree of the vacuum of a reaction gas in a portion of a vacuum chamber in which the ion beam is irradiated from that in a portion in which the ion beam is generated, and also being applicable for both-side irradiating processing and continuous processing.
    Type: Application
    Filed: September 21, 2001
    Publication date: February 7, 2002
    Applicant: Korea Institute of Science and Technology
    Inventors: Seok-Keun Koh, Hyung Jin Jung, Won Kook Choi, Jung Cho
  • Publication number: 20010045351
    Abstract: According to the present invention, there is provided a method for surface processing by plasma polymerization of a surface of a metal by using a DC discharge plasma, comprising the steps of: positioning an anode electrode which is substantially of metal to be surface-processed and a cathode electrode in a chamber; maintaining a pressure in the chamber at a predetermined vacuum level; blowing an unsaturated aliphatic hydrocarbon monomer gas or a fluorine-containing monomer gas at a predetermined pressure and a non-polymerizable gas at a predetermined pressure into the chamber; and applying a voltage to the electrodes in order to obtain a DC discharge, whereby to obtain a plasma consisting of positive and negative ions and radicals generated from the unsaturated aliphatic hydrocarbon monomer gas or the fluorine containing monomer gas and the non-polymerizable gas, and then forming a polymer with hydrophilicity or hydrophobicity on the surface of the anode electrode by plasma deposition, and also provided a met
    Type: Application
    Filed: June 22, 2001
    Publication date: November 29, 2001
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Seok-Keun Koh, Hyung Jin Jung, Won Kook Choi, Ki Hwan Kim, Sam Chul Ha, Cheol Hwan Kim, Sung-Chang Choi
  • Patent number: 6319326
    Abstract: An apparatus for surface modification of a polymer, metal, and ceramic material using an ion beam (IB) is disclosed, which is capable of supplying and controlling a voltage (220) applied to a material to be surface-modified so that an ion beam (IB) energy irradiated to the material is controlled, the degree of the vacuum of a reaction gas in a portion of a vacuum chamber in which the ion beam is irradiated is differentiated from that in a portion in which the ion beam is generated, and both-side irradiating processing and continuous processing is applicable.
    Type: Grant
    Filed: August 7, 2000
    Date of Patent: November 20, 2001
    Assignee: Korea Institute of Science and Technology
    Inventors: Seok-Keun Koh, Hyung Jin Jung, Won Kook Choi, Jung Cho
  • Patent number: 6300641
    Abstract: A process for modifying the surfaces of a polymer, ceramic, ITO or glass by irradiating energized ion particles onto the surfaces of the polymer, ceramic, ITO or glass, while blowing a reactive gas directly over the surface of the polymer, ceramic, ITO or glass under a vacuum condition, to decrease the wetting angle of the surface. The process can be widely used in the fields of polymers because it provides effects of increasing the spreading of aqueous dyestuffs, increasing adhesive strength with other materials and inhibition of light scattering by decreasing the wetting angle of the material surface.
    Type: Grant
    Filed: September 9, 1998
    Date of Patent: October 9, 2001
    Assignee: Korea Institute of Science and Technology
    Inventors: Seok Keun Koh, Hyung Jin Jung, Won Kook Choi, Kyong Sop Han, Sik Sang Gam
  • Publication number: 20010019834
    Abstract: The present invention relates to chimeric proteins consisting of antigenic proteins of Helicobacter pylori and A2 and B subunits of Vibrio cholerae toxin, more specifically, to recombinant DNAs coding for antigenic proteins Helicobacter pylori and A2 and B subunits of Vibrio cholerae toxin, recombinant expression vectors containing the genes, a process for preparing the chimeric proteins employing the recombinant microorganisms transformed with the said expression vectors, and preventive and therapeutic vaccines comprising the chimeric proteins for Helicobacter pylori-associated diseases. The recombinant DNAs which are designed for convenient expression and gene manipulation, can express chimeric proteins having excellent immunogenicity to H. pylori, which are stable in stomach, and penetrate mucous membrane of intestines easily, finally to stimulate production of sIgA. Accordingly, the chimeric proteins expressed from the recombinant DNAs may be used as an active ingredient of the diagnostic kit for H.
    Type: Application
    Filed: September 27, 1999
    Publication date: September 6, 2001
    Inventors: BYUNG-O KIM, SUNG-SEUP SHIN, YOUNG-HYO YU, MYUNG-HWAN PARK, DEOK-JOON CHOI, HYUNG-JIN JUNG
  • Publication number: 20010017257
    Abstract: An economical method of fabricating a high quality ZnO thin film with only NBE and without any deep-level emission at room temperature in order to replace conventional III-V group compounds such as GaN, and an apparatus therefor. The method comprises the steps of introducing argon (Ar) and oxygen (O2) into a vacuum chamber while maintaining a vacuum level of 1-100 mTorr in the vacuum chamber, preheating a substrate, depositing a ZnO monocrystal thin film on the substrate by RF magnetron sputtering while introducing carbon(C) or nitrogen (N) atoms from an atomic radical source installed over the substrate, and slowly cooling the substrate while maintaining a partial pressure of oxygen in the vacuum chamber at a partial pressure level used while depositing the ZnO thin film.
    Type: Application
    Filed: January 24, 2001
    Publication date: August 30, 2001
    Applicant: Korea Institute of Science and Technology
    Inventors: Won Kook Choi, Hyung Jin Jung, Kyeong Kook Kim, Young Soo Yoon, Jong Han Song
  • Patent number: 6264709
    Abstract: An electrical or electronic device and a thin-film type battery are vertically integrated and interconnected for reducing the area occupied thereby, enabling a higher degree of device integration and simplifying their fabrication. An insulating layer is formed on the device, with vertical conductors extending respectively from a pair of terminals of the device through the insulating layer. Electrode conductors are formed on the insulating layer in contact with the respective vertical conductors and serve as the cathode and anode electrodes of a thin-film battery fabricated thereon.
    Type: Grant
    Filed: April 21, 1999
    Date of Patent: July 24, 2001
    Assignee: Korea Institute of Science and Tech.
    Inventors: Young Soo Yoon, Hyung Jin Jung, Won Kook Choi, Seok Jin Yoon
  • Patent number: 6162513
    Abstract: A process for modifying a metal surface by irradiating energized ion particles onto a metal surface while blowing a reactive gas directly on the metal surface under a vacuum condition. The process can achieve the effect of decreasing the wetting angle of the polymer or metal surface and enhancing the strength and the surface energy of the metal.
    Type: Grant
    Filed: February 26, 1997
    Date of Patent: December 19, 2000
    Assignee: Korea Institute of Science and Technology
    Inventors: Seok Keun Koh, Hyung Jin Jung, Won Kook Choi, Byung Ha Kang
  • Patent number: 6162512
    Abstract: A process for modifying a nitride surface includes irradiating energized ion particles onto the nitride surface while blowing a reactive gas directly on the nitride surface under a vacuum condition. An aluminum nitride for a direct bond copper (DBC) can be obtained by forming a thin copper film on the thusly modified nitride.
    Type: Grant
    Filed: April 18, 1997
    Date of Patent: December 19, 2000
    Assignee: Korea Institute of Science and Technology
    Inventors: Seok Keun Koh, Hyung Jin Jung, Won Kook Choi, Yong Bai Son
  • Patent number: 6113859
    Abstract: A plate-type NO.sub.x gas sensor having a WO.sub.3 sensing film which are capable of preventing temperature variation of a sensing thin film depending on gas flow to decrease heat loss thereof, whereby extending the life span of batteries of a portable gas sensor. The plate-type NO.sub.x gas sensor includes a Pt thin film electrode formed on a front surface of an alumina substrate, a tungsten oxide thin film for sensing NO.sub.x gas deposited on the front surface of the substrate on which the Pt thin film electrode is formed, a heater formed on a back surface of the alumina substrate for holding a portion of the tungsten oxide thin film for sensing NO.sub.x gas within a predetermined temperature range, a conducting wire for connecting between the Pt thin film electrode and the heater and a sheet made of at least one material selected from a group composed of Al.sub.2 O.sub.
    Type: Grant
    Filed: February 4, 1998
    Date of Patent: September 5, 2000
    Assignee: Korea Institute of Science and Technology
    Inventors: Tae Song Kim, Hyung Jin Jung, Chong Hak Jung
  • Patent number: 6099917
    Abstract: A method for modifying an (oxide) material of a substrate surface to a nitride material by radiating reactive ion particles having a certain amount of energy onto the substrate surface is disclosed. The thin film deposited on the surface-modified substrate has improved material properties. In particular, a surface treatment using ion beam is executed on an Al.sub.2 O.sub.3 substrate to initially form an AlN thin film, and then a GaN thin film is deposited on said AlN thin film. From this, it is possible to obtain a high quality GaN thin film having a better material property, compared with a GaN thin film according to the prior art.
    Type: Grant
    Filed: November 17, 1998
    Date of Patent: August 8, 2000
    Assignee: Korea Institute of Science and Technology
    Inventors: Seok-Keun Koh, Hyung-Jin Jung, Won-Kook Choi, Dong-Hwa Kum, DongJin Byun