Abstract: A semiconductor device, including first and second fin patterns separated by a first trench; a gate electrode intersecting the first and second fin patterns; and a contact on at least one side of the gate electrode, the contact contacting the first fin pattern, the contact having a bottom surface that does not contact the second fin pattern, a height from a bottom of the first trench to a topmost end of the first fin pattern in a region in which the contact intersects the first fin pattern being a first height, and a height from the bottom of the first trench to a topmost end of the second fin pattern in a region in which an extension line of the contact extending along a direction in which the gate electrode extends intersects the second fin pattern being a second height, the first height being smaller than the second height.

Abstract: A semiconductor device, including a first fin type pattern and a second fin type pattern defined by a trench, the first fin type pattern and the second fin type pattern extending in a first direction, the first fin type pattern and the second fin type pattern being closest to each other; a field insulation layer filling a portion of the trench; and a contact contacting the field insulation layer, the first fin type pattern, and the second fin type pattern, the contact having a bottom surface in a shape of a wave.

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a substrate including a first region and a second region, a first transistor and a second transistor formed on the first region and the second region, respectively, a first contact formed on the first transistor, and a second contact formed on the second transistor. The first contact includes a first work function control layer having a first thickness and a first conductive layer formed on the first work function control layer, the second contact includes a second work function control layer having a second thickness different from the first thickness and a second conductive layer formed on the second work function control layer, and the first contact and the second contact have different work functions.

Abstract: An integrated circuit device includes an active area, a gate line extending in a direction across the active area and having a gate uppermost surface of a first level, a source/drain regions, an inter-gate insulating film covering opposite sidewalls of the gate line, a blocking insulating film comprising a first part covering the gate uppermost surface and a second part covering the inter-gate insulating film at a level different from the first level, and a contact plug penetrating the blocking insulating film and the inter-gate insulating film and connected to the source/drain regions.

Abstract: Provided are a lightwave circuit and a method of manufacturing the same. The lightwave circuit includes a first substrate having an engraved core formation groove which is formed on an upper portion of the first substrate, a core layer which is formed inside the engraved core formation groove, a BPSG bonding layer which is formed on the first substrate including the core layer, and a second substrate which is formed on the BPSG bonding layer. Accordingly, light loss and branching uniformity of the lightwave circuit are effectively improved, and the lightwave circuit is manufactured simply and inexpensively while also further improving light loss and branching uniformity of the lightwave circuit.

Abstract: Provided are a lightwave circuit and a method of manufacturing the same. The lightwave circuit includes a first substrate having an engraved core formation groove which is formed on an upper portion of the first substrate, a core layer which is formed inside the engraved core formation groove, a BPSG bonding layer which is formed on the first substrate including the core layer, and a second substrate which is formed on the BPSG bonding layer. Accordingly, light loss and branching uniformity of the lightwave circuit are effectively improved, and the lightwave circuit is manufactured simply and inexpensively while also further improving light loss and branching uniformity of the lightwave circuit.

Abstract: Disclosed is an optical module comprising, an optical waveguide on the upper side of a substrate; a cutout with at least two slant surfaces, passing at least the core of the optical waveguide; and a film-filter above the cutout. Constructions of bi-directional multi-wavelength optical transmitter-receiver assembly using the optical module as a unit element are also provided in variety on a planar substrate. According to this invention, a bi-directional multi-wavelength transmitter-receiver, which is compact, reliable, excellent in the optical performance and simple in the alignments between the composing elements, can be produced.

Abstract: Disclosed is an optical module comprising, an optical waveguide on the upper side of a substrate; a cutout with at least two slant surfaces, passing at least the core of the optical waveguide; and a film-filter above the cutout. Constructions of bi-directional multi-wavelength optical transmitter-receiver assembly using the optical module as a unit element are also provided in variety on a planar substrate. According to this invention, a bi-directional multi-wavelength transmitter-receiver, which is compact, reliable, excellent in the optical performance and simple in the alignments between the composing elements, can be produced.

Abstract: An apparatus and method for providing a user interface for file search are provided to achieve easier and more convenient search, storage and management of files. The apparatus includes a user interface providing a graphic user interface by which a user searches for a file; an additional information storage unit storing additional information in relation to a predetermined file, which is input through the graphic user interface by the user; and a control unit for displaying the additional information on the graphic user interface.

Abstract: Disclosed is a fluorine compound having perfluorostyrene introduced at a terminal thereof, as represented in the following Formula 1, and a coating solution and an optical waveguide device using the same, characterized in that the introduction of perfluorostyrene results in a facile fabrication of thin films by a UV curing or a thermal curing, high thermal stability and chemical resistance, and low optical propagation loss and birefringence: Wherein Z is O or S; RF is an aliphatic or aromatic group; y is a natural number of 1–10; y? is an integer of 0–1; x is an integer of 0–200; and Wherein B is a single bond or selected from the group consisting of —CO—, —SO2—, —S— and —O—, and Hal is selected from the group consisting of F, Cl, Br and I.

Abstract: Disclosed is a fluorine compound having perfluorostyrene introduced at a terminal thereof, as represented in the following Formula 1, and a coating solution and an optical waveguide device using the same, characterized in that the introduction of perfluorostyrene results in a facile fabrication of thin films by a UV curing or a thermal curing, high thermal stability and chemical resistance, and low optical propagation loss and birefringence: 1

Abstract: A method of fabricating a thermooptic tunable wavelength filter of optical communication systems using WDM is provided, which includes the steps of forming a polymer optical waveguide on a semiconductor substrate using a polymer material, forming a polymer Bragg grating on the optical waveguide using O2 RIE and polymer spin coating, and forming a thermooptic tuning electrode over the polymer optical waveguide in which the Bragg grating is integrated. This provides the thermooptical tunable wavelength filter which has very narrow wavelength band width of transmission signal, low crosstalk with optical signals adjacent thereto, stable wavelength tuning characteristic using thermooptic effect and wide tuning ranges. Furthermore, the optical devices using the polymer optical waveguide can be fabricated with low cost. Thus, they have advantages in terms of economy and marketability.

Abstract: An optical switch having reduced processing errors in a coupling region, according to the claimed invention includes an input portion having a pair of optical waveguides; an output portion having a pair of optical waveguides; a light phase shifting portion for inducing an additional phase change on light travelling in the input portion; a first light coupling waveguide for coupling between two light signals of the input portion and for providing a coupled signal with the light phase shifting portion; and a second light coupling waveguide for coupled between two light signals of the light phase shifting means and for providing a coupled signal with the output portion. The light coupling unit includes a waveguide. The switch reduces considerably any error that stems from manufacturing variations between waveguides in a coupling region since the waveguides share the error produced in a coupling region.

Abstract: A novel planar waveguide structure has been constructed by sintering substantially pure SiO.sub.2 layers in a He.sub.2 /BCl.sub.3 atmosphere. This results in the generation of a liquid phase of substantially lower viscosity than that of the deposited silica by itself. Since viscous sintering is enhanced by the presence of this liquid, consolidation occurs at lower temperature, e.g. 1000.degree.-1100.degree. C., than those used in the prior art, e.g. 1350.degree.-1500.degree. C. Much of the B.sub.2 O.sub.3 remains unreacted with the silica particles it helps to sinter, acting like a flux to bring about consolidation. This remaining B.sub.2 O.sub.3 is removed at the conclusion of the consolidation procedure by steam treatment at temperatures of 900.degree.-1100.degree. C. Some boron is incorporated into the silica layer, changing its CTE without substantially increasing its index.