Abstract: The present disclosure relates to a novel modified RNA polymerase sigma factor A (SigA) polypeptide; a polynucleotide encoding the same; a microorganism containing the polypeptide; and a method for producing L-lysine using the microorganism.

Abstract: A semiconductor package includes a support member having first and second surfaces opposing each other, having first and second through-holes, spaced apart from each other, and having a wiring structure that connects the first and second surfaces to each other; a connection member disposed on the second surface of the support member and having redistribution layers connected to the wiring structure; a semiconductor chip disposed in the first through-hole and having connection pads connected to the redistribution layers; a second passive component disposed in the second through-hole and connected to the redistribution layers; a first encapsulant disposed on the first surface of the support member and encapsulating the first passive component; and a second encapsulant encapsulating the support member, the first encapsulant, and the semiconductor chip.

Abstract: A substrate treatment apparatus includes a transport part to transport a transparent rectangular substrate, a substrate support part to support the substrate, light generators to irradiate two different lights onto the moving substrate, and sense the irradiated lights, and a control device to determine a posture of the substrate with reference to the sensed lights and control the transport part such that the substrate is seated on the substrate support part in a default posture that is preset. The control device determines the posture of the transparent rectangular substrate with respect to the default posture using a time difference between a time point at which a first light of the two different lights is not transmitted through an edge of the transparent rectangular substrate and a time point at which a second light of the two different lights is not transmitted through the edge of the transparent rectangular substrate.

Abstract: An aspartokinase variant, a microorganism comprising the variant, and a method for producing an aspartate-derived L-amino acid or a homoserine derivative thereof using the microorganism.

Abstract: The present invention relates to a method of preparing an ABS graft copolymer and a method of preparing a thermoplastic resin composition including the ABS graft copolymer. More specifically, the present invention relates to a method of preparing an ABS graft copolymer, in which a predetermined amount of a vinyl aromatic compound and a predetermined amount of a vinyl cyanide compound are grafted to a small-diameter rubber latex before enlarging particle size of the small-diameter rubber latex is performed, and then enlarging particle size of the small-diameter rubber latex is performed by adding a certain amount of a polymer coagulant, and to a method of preparing a thermoplastic resin composition including the ABS graft copolymer. According to the present invention, latex stability may be improved, and an ABS graft copolymer having excellent impact resistance may be prepared.

Abstract: A connection system of semiconductor packages includes: a printed circuit board; a first semiconductor package disposed on a first surface of the printed circuit board and connected to the printed circuit board through first electrical connection structures; a second semiconductor package disposed on a second surface of the printed circuit board and connected to the printed circuit board through second electrical connection structures; and a third semiconductor package disposed on the first 10 semiconductor package and connected to the first semiconductor package through third electrical connection structures. The first semiconductor package includes an application processor (AP), the second semiconductor package includes a memory, and the third semiconductor package includes a power management integrated 15 circuit (PMIC).

Abstract: A vertical-type memory device includes a plurality of gate electrodes stacked on a substrate; and a vertical channel structure penetrating through the plurality of gate electrodes in a first direction, perpendicular to an upper surface of the substrate. The vertical channel structure includes a channel extending in the first direction, a first filling film that partially fills an internal space of the channel, a first liner on at least a portion of an upper surface of the first filling film and an upper internal side wall of the channel extending beyond the first filling film away from the substrate. The first liner includes n-type impurities. The vertical channel structure includes a second filling film on at least a portion of the first liner, and a pad on the second filling film and in contact with the first liner.

Abstract: A semiconductor package includes: a frame having first and second through-holes spaced apart from each other; passive components disposed in the first through-hole; a semiconductor chip disposed in the second through-hole and having an active surface on which connection pads are disposed and an inactive surface opposing the active surface; a first encapsulant covering at least portions of the passive components and filling at least portions of the first through-hole; a second encapsulant covering at least portions of the semiconductor chip and filling at least portions of the second through-hole; and a connection structure disposed on the frame, the passive components, and the active surface of the semiconductor chip and including wiring layers electrically connected to the passive components and the connection pads of the semiconductor chip. The second encapsulant has a higher electromagnetic wave absorption rate than that of the first encapsulant.

Abstract: An embodiment includes a method and an encoder for SSIM-based bits allocation. The encoder includes a memory and a processor utilized for allocating bits based on SSIM, wherein the processor estimates the model parameter of SSIM-based distortion model for the current picture and determines allocates bits based on the SSIM estimation.

Abstract: An aspartokinase variant, a microorganism comprising the variant, and a method for producing an aspartate-derived L-amino acid or a homoserine derivative thereof using the microorganism.

Abstract: A hole is formed to pass through preliminary first mold layers and preliminary second mold layers to form first mold layers and mold layers respectively that are alternately stacked in a vertical direction, perpendicular to a lower structure, on the lower structure. The first mold layers are partially etched along a side surface of the hole to form recess regions and recessed first mold layers. Third mold layers are formed in the recess regions to form interlayer insulation layers so that each of the interlayer insulation layers includes a corresponding third mold layer and a corresponding recessed first mold layer that are positioned at the same level in the vertical direction. A first dielectric layer is formed in the hole to cover the third mold layers and the second mold layers stacked on each other. Information storage patterns are formed on the first dielectric layer.

Abstract: Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a process chamber having a treatment space in the interior thereof, a support unit located in the process chamber to support a substrate, a gas supply unit configured to supply a process gas into the interior of the process chamber, a plasma generating unit including an upper electrode having a through-hole, through which the process gas flows, and a shower head having a hole, through which the process gas is ejected into the treatment space, and an inspection unit configured to inspect a coupling state of the shower head and the upper electrode while an optical fiber is interposed between the upper electrode and the shower head.

Abstract: There are disclosed a multilayer ceramic capacitor and a method of manufacturing the same. The multilayer ceramic capacitor includes: a ceramic body having a first side and a second side opposed to each other and having a third side and a fourth side connecting the first side to the second side, a plurality of inner electrodes formed within the ceramic body, and outer electrodes formed on the third side and the fourth side and electrically connected to the inner electrodes. A distance from distal edges of the inner electrodes to the first side or the second side of the ceramic body is 30 ?m or less.

Abstract: A display apparatus for controlling a peripheral device and a method thereof are provided. The method may include transmitting, to a remote controller, a first turn-on signal to turn on the peripheral device; measuring a time interval between a first time when the display apparatus transmits the first turn-on signal to the remote controller and a second time when the display apparatus starts to receive content from the peripheral device in response to the first turn-on signal; and setting the measured time interval as a threshold time to determine whether the content is received from the peripheral device.

Abstract: Several systems and methods for intra-prediction estimation of video pictures are disclosed. In an embodiment, the method includes accessing four ‘N×N’ pixel blocks comprising luma-related pixels. The four ‘N×N’ pixel blocks collectively configure a ‘2N×2N’ pixel block. A first pre-determined number of candidate luma intra-prediction modes is accessed for each of the four ‘N×N’ pixel blocks. A presence of one or more luma intra-prediction modes that are common among the candidate luma intra-prediction modes of at least two of the four ‘N×N’ pixel blocks is identified. The method further includes performing, based on the identification, one of (1) selecting a principal luma intra-prediction mode for the ‘2N×2N’ pixel block and (2) limiting a partitioning size to a ‘N×N’ pixel block size for a portion of the video picture corresponding to the ‘2N×2N’ pixel block.

Abstract: Provided are a ferritic stainless steel for automotive exhaust systems with improved heat resistance and condensate corrosion resistance and a method for manufacturing the same. The ferritic stainless steel according to an exemplary embodiment of the present invention includes a stainless steel base material comprising, in % by weight, C: 0.01% or less, Si: 0.5 to 1.0%, Mn: 0.5% or less, P: 0.035% or less, S: 0.01% or less, Cr: 11 to 18%, N: 0.013% or less, Ti: 0.15 to 0.5%, Sn: 0.03 to 0.5%, and the remainder of Fe and other inevitable impurities, and an Al-plated layer formed on the stainless steel base material, wherein the ferritic stainless steel comprises a plating compound comprising (Al19FeMnSi2)5,31 (Aluminum Iron Manganese Silicide) at an interface between the stainless steel base material and the Al-plated layer.

Abstract: The present invention provides a dust cover which is provided between an engine room and the driver's seat such that, when a steering shaft provided under a steering wheel of a vehicle is installed passing through a vehicle frame, the steering shaft passes through the dust cover. The dust cover is characterized by comprising: a pair of bearings coupled to the steering shaft; a pair of bearing races provided to surround outer circumferential surfaces of the bearings; a ring-shaped fixing cap forcibly inserted into the bearing races through both sides of an opening by interference fitting, thereby fixing the bearings; and an integrally formed seal part having through-holes to which the bearing races are coupled.

Abstract: The present disclosure relates to a fan-out semiconductor package in which a plurality of semiconductor chips are stacked and packaged, and are disposed in a special form to be thus electrically connected to a redistribution layer of a connection member through vias rather than wires. The fan-out semiconductor package can further include a connection member having a through-hole, and at least one of the semiconductor chips can be disposed in the through-hole.

Abstract: A semiconductor device includes a lower stack structure on a substrate, an upper stack structure on the lower stack structure, and a channel structure in a channel hole formed through the upper stack structure and the lower stack structure. The channel hole includes a lower channel hole in the lower stack structure, an upper channel hole in the upper stack structure, and a partial extension portion adjacent to an interface between the lower stack structure and the upper stack structure. The partial extension portion is in fluid communication with the lower channel hole and the upper channel hole. A lateral width of the partial extension portion may be greater than a lateral width of the upper channel hole adjacent to the partial extension portion and greater than a lateral width of the upper channel hole adjacent to the partial extension portion.

Abstract: A connection system of semiconductor packages includes: a printed circuit board; a first semiconductor package disposed on a first surface of the printed circuit board and connected to the printed circuit board through first electrical connection structures; a second semiconductor package disposed on a second surface of the printed circuit board and connected to the printed circuit board through second electrical connection structures; and a third semiconductor package disposed on the first semiconductor package and connected to the first semiconductor package through third electrical connection structures. The first semiconductor package includes an application processor (AP), the second semiconductor package includes a memory, and the third semiconductor package includes a power management integrated circuit (PMIC).