Abstract: The novel intercalating fluorescent compounds of exemplary embodiments of the present invention for analyzing nucleic acids, etc. have excellent intercalating efficiency with nucleic acids such as DNA and RNA of biomaterials, and may not only continuously maintain fluorescence properties and efficiency, but also have excellent effects even in terms of storage stability such as temperature and moisture, etc. and biosafety. In addition, the fluorescent compounds have various advantages capable of being dissolved in distilled water, which is a solvent harmless to the human body, and being applied to a wide range of analysis without being limited to the analysis of specific cells and living tissues.

Abstract: A combination structure includes an in-plane pattern of unit cells, wherein the each unit cell includes nanostructures each having a dimension that is smaller than a near-infrared wavelength and a light-absorbing layer adjacent to the nanostructures and including a near-infrared absorbing material configured to absorb light in at least a portion of a near-infrared wavelength spectrum. The nanostructures are define a nanostructure array in the unit cells, and a wavelength width at 50% transmittance of a transmission spectrum in the near-infrared wavelength spectrum of the combination structure is wider than a wavelength width at 50% transmittance of a transmission spectrum in the near-infrared wavelength spectrum of the nanostructure array.

Abstract: A display device includes: a substrate; a first active layer of a first transistor and a second active layer of a second transistor on the substrate; a first gate insulating layer on the first active layer; a first gate electrode on the first gate insulating layer; a second gate insulating layer on the second active layer; and a second gate electrode on the second gate insulating layer, wherein a hydrogen concentration of the first gate insulating layer is lower than a hydrogen concentration of the second gate insulating layer.

Abstract: An apparatus for repairing elements, includes: a bonding material transfer stamp transferring a new bonding material to a repair area on a substrate, the repair area having a defective element or a residual bonding material removed therefrom; and an element transfer stamp transferring a new element to the new bonding material, wherein the element transfer stamp comprises a load control portion for elements, the load control portion being bent and deformed upon receiving pressing force such that a zero-stiffness load smaller than a critical damage load of the new element is applied to the new element.

Abstract: Disclosed are an optical structure, and a camera module and an electronic device including the same. The optical structure includes a transparent substrate; a first moisture-proof layer disposed on the transparent substrate and including a first organic material having moisture-proof properties; and a first near-infrared absorbing layer disposed between the transparent substrate and the first moisture-proof layer and including a copper complex, wherein the first organic material having moisture-proof properties has a water vapor transmission rate (WVTR) of less than or equal to about 100 g/m2/day measured at a thickness of 100 ?m.

Abstract: Embodiments relate to a semiconductor device including a trench with undercut structure including a substrate made of a first material; an insulation layer formed on an upper surface of the substrate; at least one trench penetrating the insulation layer toward the substrate; and at least one seed layer formed in the trench, the seed layer made of a second material which is different from the first material, and a method for manufacturing the same.

Abstract: According to an aspect of the present disclosure, a capacitor component includes a body including a dielectric layer and an internal electrode layer; and an external electrode disposed on the body and connected to the internal electrode layer, wherein the body further includes a withstand voltage layer disposed in a region spaced apart by more than 0 to 30 nm or less in a direction from a boundary of the internal electrode layer toward the dielectric layer, and having ionic mobility, lower than ionic mobility of the dielectric layer.

Abstract: A transistor includes a semiconductor layer on a substrate, a gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode electrically connected to the semiconductor layer. The semiconductor layer includes a second material doped to a first material. The first material includes a compound expressed as XYa of a Chemical Formula. X is one of Mo, W, Zr, or Re, Y is one of S, Se, or Te, and a is a natural number that is equal to or greater than 1. The second material includes at least one of W, Hf, Ta, Ti, Pt, Ni, Ga, or Zr. The second material includes an element that is different from the first material.

Abstract: There are provided a semiconductor device and a manufacturing method of a semiconductor device. The semiconductor device includes: a gate structure including conductive layers and insulating layers, which are alternately stacked; channel structures penetrating the gate structure, the channel structures being arranged in a first direction; and a cutting structure extending in the first direction, the cutting structure consecutively penetrating the channel structures. Each of the channel structures includes a first channel structure and a second channel structure, which are isolated from each other by the cutting structure.

Abstract: A negative electrode includes a negative electrode current collector, a first negative electrode active material layer disposed on the negative electrode current collector, and a second negative electrode active material layer disposed on the first negative electrode active material layer, wherein the second negative electrode active material layer includes a second negative electrode active material and a second conductive material, and the second negative electrode active material includes a silicon-based active material and a carbon-based active material, wherein the silicon-based active material includes SiOX (0?X<2), and the second conductive material includes a carbon nanotube structure in which a plurality of single-walled carbon nanotube units are bonded side by side, and a particulate conductive material, wherein in the second negative electrode active material layer, the weight ratio of the carbon nanotube structure and the particulate conductive material is 12.7:87.3 to 0.5:99.5.

Abstract: A display device includes a first conductive layer including a first voltage line and a second voltage line, a buffer layer, a semiconductor layer including a first active layer and a second active layer, a first gate insulating layer, a second conductive layer including a first gate electrode overlapping the first active layer and a second gate electrode overlapping the second active layer, a passivation layer, a via layer, a bank pattern layer including a first bank pattern and a second bank pattern partially spaced apart from each other, a third conductive layer including a first electrode and a second electrode spaced apart from each other, and light emitting elements. The passivation layer includes silicon nitride (SiNx), and a ratio of a number of silicon-hydrogen bonds (Si—H) to a number of nitrogen-hydrogen bonds (N—H) in the silicon nitride (SiNx) is in a range of about 1:0.6 to about 1:1.5.

Abstract: A display device includes: a display panel including a display area including pixels and a non-display area adjacent to the display area; a first driving integrated circuit including a first ground terminal, where the first driving integrated circuit is electrically connected to the display panel; a first printed circuit board electrically connected to the first driving integrated circuit; a first plate disposed on a bottom surface of the display panel and overlapping with the first driving integrated circuit; and a second plate disposed on the bottom surface of the display panel and spaced apart from the first plate, where the second plate is electrically connected to a system ground.

Abstract: A display device includes: a substrate; a first conductive layer on the substrate and comprising a first signal line; an insulating layer pattern on the first conductive layer; a semiconductor pattern on the insulating layer pattern; a gate insulating layer on the semiconductor pattern; and a second conductive layer comprising a gate electrode on the gate insulting layer and a first source/drain electrode and a second source/drain electrode, each on at least a part of the semiconductor pattern, wherein the insulating layer pattern and the semiconductor pattern have a same planar shape, the semiconductor pattern comprises a channel region overlapping the gate electrode, a first source/drain region on a first side of the channel region and a second source/drain region on a second side of the channel region, and the first source/drain electrode electrically connects the first source/drain region and the first signal line.

Abstract: A display device includes a substrate including a display area and a peripheral area; a first voltage line disposed on the display area of the substrate, a first voltage being applied to the first voltage line; a second voltage line disposed on the display area of the substrate and extending in a direction parallel to the first voltage line, a second voltage being applied to the second voltage line; a first voltage transmission line disposed on the peripheral area of the substrate and transmitting the first voltage; a second voltage transmission line disposed on the peripheral area of the substrate and transmitting the second voltage; a first bridge electrode electrically connecting the first voltage line and the first voltage transmission line; and a second bridge electrode electrically connecting the second voltage line and the second voltage transmission line.

Abstract: Disclosed is a display device, including: a substrate including a pixel area and a peripheral area; pixels provided in the pixel area as a plurality of pixel rows and a plurality of pixel columns; data lines configured to provide a data signal; scan lines configured to provide a scan signal; first power lines configured to provide a power source to the pixel columns; and a second power line connected to the first power lines and disposed in the peripheral area. A scan line connected to an ith pixel row may apply a scan signal to the ith pixel row, and a branched line branched from the scan line may apply an initialization signal to a kth pixel row (k?i). A branched point of the scan line is disposed between a pixel most adjacent to the second power line of the ith pixel row and the second power line.

Abstract: A battery module includes: a plurality of battery cells; a module case configured to accommodate the plurality of battery cells; an electrode terminal provided outside the module case; and a fuse assembly provided to be attachable to or detachable from an outer side of the module case, and including a busbar having one end connected to the electrode terminal and the other end connected to an external cable and configured to break when an overcurrent occurs, and a fuse case configured to accommodate the busbar.

Abstract: A display device includes first lead lines connecting the circuit signal lines with the driving integrated circuit, and second lead lines connecting the panel signal lines with the driving integrated circuit, wherein the second lead lines comprise a 2-1 sub-lead line configured to supply a scan-high voltage signal from the driving integrated circuit to the panel signal lines, and a 2-2 sub-lead line configured to supply a scan-low voltage signal from the driving integrated circuit to the panel signal lines, wherein the first lead lines comprises a 1-1 sub-lead line connected to the driving integrated circuit, a 1-1-1 sub-lead line separated from the 1-1 sub-lead line in a first direction, a 1-2 sub-lead line spaced apart from the 1-1 sub-lead line in a second direction intersecting the first direction, and a 1-2-1 sub-lead line spaced apart from the 1-2 sub-lead line in the second direction.

Abstract: A method for providing remote rehabilitation training is provided. The method includes receiving, by a server, a connection request from a user terminal and a therapist terminal, receiving, by the server, first image data, about an appearance where a user performs rehabilitation training using a rehabilitation training device, in real time from the user terminal, receiving, by the server, second image data, provided to the user who is performing the rehabilitation training, in real time from a rehabilitation training display device, and transmitting, by the server, the received first image data and the received second image data to the therapist terminal in real time.

Abstract: A data classification apparatus and method for providing expanded information are proposed. The method may include collecting time-series sensor data from an Internet-of-Things (IoT) sensor provided in or installable in a machine, and generating first processed data in which the time-series sensor data is highlighted. The method may also include generating, based on the first processed data, second processed data for determining a state of the machine, and classifying the state of the machine, based on the second processed data. The state of the machine may include one or more of a first state in which the machine is active and the first processed data is included in a non-pattern section in which no pattern is visualized, and a second state in which the machine is active and the first processed data is included in a pattern section in which an arbitrary pattern is visualized.

Abstract: A display device and a method of driving a display device are provided. A display device includes a substrate, a first conductive layer on the substrate and including a lower light blocking pattern, a buffer layer on the first conductive layer, a semiconductor layer including a semiconductor pattern on the buffer layer, a gate insulating layer on the semiconductor pattern, a second conductive layer including a gate electrode on the gate insulating layer, a planarization layer on the second conductive layer, and a third conductive layer on the planarization layer and including a first conductive pattern electrically coupling the lower light blocking pattern to the semiconductor pattern, wherein the first conductive pattern is coupled to the lower light blocking pattern through a first contact hole passing through the planarization layer and the buffer layer, and coupled to the semiconductor pattern through a second contact hole passing through the planarization layer.