Abstract: A semiconductor device includes a data line pair formed of a data line and a complementary data line; a first sensing amplification unit including a first sensing amplifier and a second sensing amplifier that are cross-coupled with the data line and the complementary data line; a first variable current source supplying or flowing out a first variable current to the first sensing amplifier; and a second variable current source supplying or flowing out a second variable current to the second sensing amplifier. A current amount of the first variable current is different from a current amount of the second variable current.

Abstract: A temperature sensing circuit includes first, second and third proportional to absolute temperature (PTAT) units, and first and second subtracters. The first PTAT unit generates a first output voltage based on a reference current and a current of N times the reference current, where N is an emitter current density ratio. The second PTAT unit generates a second output voltage based on a current of twice the reference current and a current of 2N times the reference current. The third PTAT unit generates a third output voltage based on the reference current and a current of N times the reference current. The first subtracter performs subtraction on the second output voltage and the third output voltage, and the second subtracter performs subtraction on an output voltage of the first subtracter and the first output voltage.

Abstract: Delay circuits are provided. Some embodiments of delay circuits herein include a delay line including multiple delay cells connected in series and a variable voltage supplier operative to output a voltage value proportional and/or inversely proportional to a temperature. Delay circuits may include at least one loading capacitor that includes a first end that is connected to an output port of the delay cell and a second end that is connected to an output port of the variable voltage supplier., the at least one loading capacitor including a capacitance that is decreased corresponding to an increase in temperature when a positive voltage is applied across the first end and the second end of the at least one loading capacitor.

Abstract: A reference bias circuit is provided. The reference bias circuit includes a voltage detector, an operational amplifier, a compensation circuit, and a reference current generator. The voltage detector detects a first input voltage and a second input voltage of the operational amplifier based on a voltage of a first node and a voltage of a second node. The voltage of the first and second nodes varies with temperature, which changes the first input voltage and the second input voltage and thus changes the output voltage of the operational amplifier. The compensation circuit compensates for the variation of the voltage of the first and second nodes caused by temperature and/or process variation, thereby preventing the variation of a reference current generated by the reference current generator based on the output voltage of the operational amplifier.

Abstract: A band gap reference circuit incorporating resistive trimming is disclosed. The band gap reference circuit includes an additional trimming resistor and a trimming unit which performs trimming by changing a resistance value of the trimming resistor.

Abstract: Example embodiments are directed to an apparatus and method for measuring a pulse width. A side-band signal generator may be configured to receive a given data pattern and output a side-band signal by modulating a pulse width of the received data pattern in a test mode. A phase detector may be configured to receive the side-band signal and a reference clock signal, and output a pulse signal corresponding to a phase difference between the received side-band signal and the reference clock signal. A charge pump may be configured to receive the pulse signal and output an output voltage by increasing or decreasing the output voltage based on the pulse signal. A pulse width measurer may be configured to receive the output voltage of the charge pump and determine whether pulses forming the side-band signal have appropriate widths based on whether the output voltage is included in a desired reference voltage range.

Abstract: A temperature sensing circuit includes first, second and third proportional to absolute temperature (PTAT) units, and first and second subtracters. The first PTAT unit generates a first output voltage based on a reference current and a current of N times the reference current, where N is an emitter current density ratio. The second PTAT unit generates a second output voltage based on a current of twice the reference current and a current of 2N times the reference current. The third PTAT unit generates a third output voltage based on the reference current and a current of N times the reference current. The first subtracter performs subtraction on the second output voltage and the third output voltage, and the second subtracter performs subtraction on an output voltage of the first subtracter and the first output voltage.