Patents by Inventor Hyung-Jin Lee

Hyung-Jin Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12208417
    Abstract: The present invention relates to a flat-plate focusing ultrasonic transducer and an acoustic lens composed of an annular array piezoelectric element and methods of manufacturing and designing thereof, more particularly to a flat-plate focusing ultrasonic transducer composed of an annular array piezoelectric element, wherein the annular array piezoelectric element has a plurality of concentric regions which is concentrically arranged in a concentric circle shape with respect to a center point, the concentric region has ring shaped sound insulation regions and piezoelectric regions which are alternatively formed in a direction from the center point to a radius direction, so as to focus a sound wave near a focal point, wherein the piezoelectric regions are composed of a piezoelectric ring that is composed of a piezoelectric material and thus excites a sound wave, the concentric region is in a shape of a flat-plate of which both sides are flat and which has a constant thickness, and each radius of the plurality o
    Type: Grant
    Filed: May 20, 2021
    Date of Patent: January 28, 2025
    Assignee: Korea Research Institute of Standards and Science
    Inventors: Yong Tae Kim, Kyung Min Baik, Sung Mok Kim, Hyung Jin Lee, Il Doh
  • Patent number: 12206077
    Abstract: The present invention provides a battery safety test device includes: a mechanical switch element having one end connected to either a battery positive or negative electrode and the other end connected to an electronic switching element; the electronic switching element having one end connected to the mechanical switch element and the other end connected to the other of the battery positive or negative electrode; a voltage sensor for measuring a voltage of the battery after the mechanical switch element and the electronic switching element are turned on; and a current sensor for measuring a current of the battery after the mechanical switch element and the electronic switching element are turned on.
    Type: Grant
    Filed: December 29, 2023
    Date of Patent: January 21, 2025
    Assignee: LG ENERGY SOLUTION, LTD.
    Inventors: Won Hyeok Lee, Hyung Jin Hwang, Seong Ha Cha, Ui Yong Jeong, In Cheol Shin
  • Publication number: 20250002349
    Abstract: A method for synthesizing carbon nanotubes using a nanoparticle catalyst prepared by vaporizing a catalyst raw material using plasma and then condensing the vaporized catalyst raw material is disclosed. The production method of the present disclosure can make the synthesized carbon nanotubes have high crystallinity; and facilitate their mass synthesis.
    Type: Application
    Filed: October 19, 2022
    Publication date: January 2, 2025
    Applicants: LG Chem, Ltd, Tekna Plasma Systems Inc.
    Inventors: Dong Sik Kim, Jiayin Guo, Tae Hoon Kim, Hyung Jin Lee, Geun Gi Min, Doo Hoon Song, Soo Hee Kang, Ye Byeol Kim, Byoung Jin Kim, Sung Hyun Lee
  • Publication number: 20240382924
    Abstract: An apparatus for producing carbon nanotubes includes a plasma apparatus and a CVD reactor which are connected in series is disclosed, and a nanoparticle catalyst in an aerosol state prepared in the plasma apparatus is transferred into the CVD reactor to synthesize carbon nanotubes, thereby continuously synthesizing the carbon nanotubes having excellent physical properties.
    Type: Application
    Filed: October 19, 2022
    Publication date: November 21, 2024
    Applicants: LG Chem, Ltd., Tekna Plasma Systems Inc.
    Inventors: Dong Sik Kim, Jiayin Guo, Tae Hoon Kim, Hyung Jin Lee, Geun Gi Min, Doo Hoon Song, Soo Hee Kang, Ye Byeol Kim, Byoung Jin Kim, Sung Hyun Lee
  • Patent number: 12137611
    Abstract: The present disclosure provides a compound of following formula and an organic light emitting device and an organic light emitting display device including the compound. The compound of the present disclosure serves as a host or a dopant in an emitting material layer.
    Type: Grant
    Filed: December 3, 2019
    Date of Patent: November 5, 2024
    Assignee: LG Display Co., Ltd.
    Inventors: Kyung-Jin Yoon, Yu-Jin Bae, Bo-Min Seo, Jeong-Eun Baek, Joong-Hwan Yang, Chun-Ki Kim, Jung-Hyun Yoon, Hyung-Won Cho, Kyu-Soon Shin, Jeong-A Seo, Hyung-Jin Lee, Young-Sam Jin, Dong-Hyun Lee
  • Publication number: 20240281923
    Abstract: An optical inspection device includes: an optical inspection main body on which a target substrate is mounted; high-resolution cameras spaced from the target substrate and disposed in the optical inspection main body, where the high-resolution cameras photograph high-resolution images; and an image converter which converts the high-resolution images into a low-resolution image, where the image converter includes a gray uniformizer which adjusts grays of the high-resolution images to allow a gray deviation among the high-resolution images to be equal to or less than a deviation reference value.
    Type: Application
    Filed: November 17, 2023
    Publication date: August 22, 2024
    Inventor: Hyung Jin LEE
  • Publication number: 20240276871
    Abstract: A novel compound for a light emitting device, and an organic light emitting device containing the same are disclosed.
    Type: Application
    Filed: March 13, 2024
    Publication date: August 15, 2024
    Inventors: Ho Wan HAM, Hyun Cheol AN, Byung Cheol MIN, Dong Jun KIM, Jeong Woo HAN, Hyung Jin LEE, Ja Eun ANN, Dong Yuel KWON, Dae Woong LEE, Hyeon Jeong IM, Yeong Rong PARK, Il Soo OH, Bo Ra LEE, Ill Hun CHO
  • Publication number: 20240254112
    Abstract: A novel compound for a capping layer, and an organic light emitting device containing the same are disclosed.
    Type: Application
    Filed: March 25, 2024
    Publication date: August 1, 2024
    Inventors: Ho Wan HAM, Hyun Cheol AN, Byung Cheol MIN, Dong Jun KIM, Jeong Woo HAN, Hyung Jin LEE, Ja Eun ANN, Dong Yuel KWON
  • Publication number: 20240190810
    Abstract: A novel compound for a capping layer, and an organic light-emitting device containing the same are disclosed.
    Type: Application
    Filed: December 29, 2023
    Publication date: June 13, 2024
    Inventors: Ho Wan HAM, Hyun Cheol AN, Hee Joo KIM, Dong Jun KIM, Jeong Woo HAN, Hyung Jin LEE, Ja Eun ANN, Dong Yuel KWON, Ill Hun CHO, Bo Ra LEE, Yeong Rong PARK, Il Soo OH, Dae Woong LEE, Hyeon Jeong IM
  • Publication number: 20240190811
    Abstract: A novel compound for a capping layer, and an organic light-emitting device containing the same are disclosed.
    Type: Application
    Filed: December 29, 2023
    Publication date: June 13, 2024
    Inventors: Ho Wan HAM, Hyun Cheol AN, Byung Cheol MIN, Hee Joo KIM, Dong Jun KIM, Hyung Jin LEE, Ja Eun ANN, Dong Yuel KWON, Yeong Rong PARK, Dae Woong LEE, Il Soo OH, Bo Ra LEE, Hyeon Jeong IM, Ill Hun CHO
  • Patent number: 11961836
    Abstract: An integrated circuit structure comprises one or more fins extending above a surface of a substrate over an N-type well. A gate is over and in contact with the one or more fins. A second shallow N-type doping is below the gate and above the N-type well.
    Type: Grant
    Filed: September 28, 2018
    Date of Patent: April 16, 2024
    Assignee: Intel Corporation
    Inventors: Hyung-Jin Lee, Mark Armstrong, Saurabh Morarka, Carlos Nieva-Lozano, Ayan Kar
  • Publication number: 20240092776
    Abstract: Disclosed (or Provided) are a heterocyclic compound and an organic light emitting device including the same.
    Type: Application
    Filed: June 22, 2023
    Publication date: March 21, 2024
    Applicant: LT MATERIALS CO., LTD.
    Inventors: Hyung-Jin LEE, Won-Jang JEONG, Dong-Jun KIM, Dae-Hyuk CHOI
  • Patent number: 11905204
    Abstract: According to an embodiment, a cover glass includes a glass plate forming at least a portion of an electronic device, and a first coat layer deposited on a surface of the glass plate, the first coat layer at least partially including a network structure. The first coat layer includes silicon (Si), oxygen (O), and at least one impurity, and such that Si—O bonds are 80% or more by weight of the first coat layer. A polysilazane-applied coat is laid over one surface of the reinforced glass plate, providing an elegant haze glass cover.
    Type: Grant
    Filed: October 26, 2018
    Date of Patent: February 20, 2024
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Wook-Tae Kim, In-Gi Kim, Ji-Won Lee, Chang-Soo Lee, Hyung-jin Lee, Gyu-Ha Jo, Yong-Hyun Cho
  • Patent number: 11854445
    Abstract: A method for inspecting a display device includes preparing a target substrate comprising sub-pixels in which light-emitting elements are disposed, dividing each of first regions of the sub-pixels into second regions, obtaining a gray value of each of the second regions, generating a random number using the gray value, calculating a representative value of each of the first regions by reflecting variables in the random number, and summing the representative values of the first regions to calculate a number of light-emitting elements of the sub-pixels.
    Type: Grant
    Filed: February 3, 2021
    Date of Patent: December 26, 2023
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Hyung Jin Lee, Sang Heon Ye, Se Yoon Oh
  • Publication number: 20230269667
    Abstract: A method for dynamically applying a battery saving technology by a terminal is disclosed. The method comprises transmitting a first message requesting an activation of a battery saving technology dynamic service to an authentication server, receiving a second message being a response to the first message from the authentication server, transmitting and receiving data with a base station in a battery saving technology deactivated state, when response information included in the second message comprises authentication success, and at least one application included in the second message is running, and maintaining a battery saving technology activated state when the application included in the second message is not running.
    Type: Application
    Filed: February 15, 2021
    Publication date: August 24, 2023
    Applicant: KT Corporation
    Inventors: Han-Jin JOH, Hyung-Jin LEE, Youn-Pil JEUNG
  • Publication number: 20230141957
    Abstract: An optical inspection device includes: a barrel; a first light source unit at a first side of the barrel and configured to irradiate light of a first wavelength range through a first light path; a second light source unit at a second side of the barrel, the second side being different from the first side, and configured to irradiate light of a second wavelength range that is different from the first wavelength range through a second light path; and a camera. At least a portion of the first light path is different from the second light path.
    Type: Application
    Filed: May 5, 2022
    Publication date: May 11, 2023
    Inventors: Jeong Moon LEE, Dae Hong KIM, Hyung Jin LEE
  • Patent number: 11621334
    Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication. In an example, an integrated circuit structure includes a fin including silicon. A gate structure is over the fin, the gate structure having a center. A conductive source trench contact is over the fin, the conductive source trench contact having a center spaced apart from the center of the gate structure by a first distance. A conductive drain trench contact is over the fin, the conductive drain trench contact having a center spaced apart from the center of the gate structure by a second distance, the second distance greater than the first distance by a factor of three.
    Type: Grant
    Filed: January 29, 2019
    Date of Patent: April 4, 2023
    Assignee: Intel Corporation
    Inventors: Said Rami, Hyung-Jin Lee, Surej Ravikumar, Kinyip Phoa
  • Patent number: 11538803
    Abstract: Embodiments disclosed herein include semiconductor devices and methods of forming such devices. In an embodiment the semiconductor device comprises a first semiconductor layer, where first transistors are fabricated in the first semiconductor layer, and a back end stack over the first transistors. In an embodiment the back end stack comprises conductive traces and vias electrically coupled to the first transistors. In an embodiment, the semiconductor device further comprises a second semiconductor layer over the back end stack, where the second semiconductor layer is a different semiconductor than the first semiconductor layer. In an embodiment, second transistors are fabricated in the second semiconductor layer.
    Type: Grant
    Filed: December 14, 2018
    Date of Patent: December 27, 2022
    Assignee: Intel Corporation
    Inventors: Gilbert Dewey, Telesphor Kamgaing, Aleksandar Aleksov, Gerogios Dogiamis, Hyung-Jin Lee
  • Patent number: 11532574
    Abstract: Embodiments may relate to a semiconductor package that includes a die and a package substrate. The package substrate may include one or more cavities that go through the package substrate from a first side of the package substrate that faces the die to a second side of the package substrate opposite the first side. The semiconductor package may further include a waveguide communicatively coupled with the die. The waveguide may extend through one of the one or more cavities such that the waveguide protrudes from the second side of the package substrate. Other embodiments may be described or claimed.
    Type: Grant
    Filed: April 25, 2019
    Date of Patent: December 20, 2022
    Assignee: Intel Coropration
    Inventors: Aleksandar Aleksov, Georgios Dogiamis, Telesphor Kamgaing, Gilbert W. Dewey, Hyung-Jin Lee
  • Patent number: 11515424
    Abstract: Disclosed herein are field-effect transistors with asymmetric gate stacks. An example transistor includes a channel material and an asymmetric gate stack, provided over a portion of the channel material between source and drain (S/D) regions. The gate stack is asymmetric in that a thickness of a gate dielectric of a portion of the gate stack closer to one of the S/D regions is different from that of a portion of the gate stack closer to the other S/D region, and in that a work function (WF) material of a portion of the gate stack closer to one of the S/D regions is different from a WF material of a portion of the gate stack closer to the other S/D region. Transistors as described herein exploit asymmetry in the gate stacks to improve the transistor performance in terms of high breakdown voltage, high gain, and/or high output resistance.
    Type: Grant
    Filed: February 8, 2019
    Date of Patent: November 29, 2022
    Assignee: Intel Corporation
    Inventors: Said Rami, Hyung-Jin Lee, Saurabh Morarka, Guannan Liu, Qiang Yu, Bernhard Sell, Mark Armstrong