Patents by Inventor HYUNKYO OH

HYUNKYO OH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11114174
    Abstract: A memory system includes a memory device including a plurality of blocks, a buffer storing degradation information regarding at least one of the plurality of blocks, and a memory controller configured to determine a degradation level of the block corresponding to the read request based on the degradation information, in response to a read request from a host, infer a read level corresponding to the read request based on the degradation level, and read data from the memory device based on the read level.
    Type: Grant
    Filed: March 16, 2020
    Date of Patent: September 7, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyunkyo Oh, Jinbaek Song, Kangho Roh
  • Publication number: 20210118516
    Abstract: A storage device includes a non-volatile memory including a plurality of blocks, a buffer memory, and a controller that stores an on-cell count in the buffer memory, the on-cell count indicating a number of memory cells, which are turned on by a read level applied to a reference word line of each of the plurality of blocks, from among memory cells connected to the reference word line.
    Type: Application
    Filed: December 7, 2020
    Publication date: April 22, 2021
    Inventors: Hyunkyo OH, Sangkwon MOON
  • Publication number: 20210109660
    Abstract: An operation method of a storage controller which includes a nonvolatile memory device, the method including: collecting a first parameter indicating a degradation factor of a first memory area of the nonvolatile memory device and a second parameter indicating a degree of degradation occurring at the first memory area, in an initial driving period; selecting a first function model of a plurality of function models based on the first parameter and the second parameter and predicting a first error tendency of the first memory area based on the first function model; determining a first reliability interval based on the first error tendency; and performing a first reliability operation on the first memory area of the nonvolatile memory device based on the first reliability interval.
    Type: Application
    Filed: August 21, 2020
    Publication date: April 15, 2021
    Inventors: YEONJI KIM, YOUNGDEOK SEO, CHANHA KIM, KANGHO ROH, HYUNKYO OH, HEEWON LEE
  • Publication number: 20210050067
    Abstract: A memory system includes a memory device including a plurality of blocks, a buffer storing degradation information regarding at least one of the plurality of blocks, and a memory controller configured to determine a degradation level of the block corresponding to the read request based on the degradation information, in response to a read request from a host, infer a read level corresponding to the read request based on the degradation level, and read data from the memory device based on the read level.
    Type: Application
    Filed: March 16, 2020
    Publication date: February 18, 2021
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Hyunkyo OH, Jinbaek SONG, Kangho ROH
  • Patent number: 10872675
    Abstract: A storage device includes a non-volatile memory including a plurality of blocks, a buffer memory, and a controller that stores an on-cell count in the buffer memory, the on-cell count indicating a number of memory cells, which are turned on by a read level applied to a reference word line of each of the plurality of blocks, from among memory cells connected to the reference word line.
    Type: Grant
    Filed: June 21, 2019
    Date of Patent: December 22, 2020
    Assignee: Samsung Electronics Co., Ltd..
    Inventors: Hyunkyo Oh, Sangkwon Moon
  • Publication number: 20200151539
    Abstract: A storage device includes a non-volatile memory including a plurality of blocks, a buffer memory that stores a plurality of on-cell counts, which are generated by reading memory cells connected to a plurality of reference word lines of the plurality of blocks by using a read level, and an artificial neural network model, and a controller that inputs an on-cell count corresponding to a target block among the plurality of on-cell counts and a number of a target word line of the target block to the artificial neural network model, and infers a plurality of read levels for reading data of memory cells connected to the target word line using the artificial neural network model.
    Type: Application
    Filed: June 21, 2019
    Publication date: May 14, 2020
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Hyunkyo Oh, Youngdeok SEO, Jinbaek SONG, Sanghyun CHOI
  • Publication number: 20200152279
    Abstract: A storage device includes a non-volatile memory including a plurality of blocks, a buffer memory, and a controller that stores an on-cell count in the buffer memory, the on-cell count indicating a number of memory cells, which are turned on by a read level applied to a reference word line of each of the plurality of blocks, from among memory cells connected to the reference word line.
    Type: Application
    Filed: June 21, 2019
    Publication date: May 14, 2020
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Hyunkyo OH, Sangkwon MOON
  • Patent number: 10424388
    Abstract: A memory system includes multiple storage devices that each include a nonvolatile memory device. A client device is configured to collect deterioration information of the nonvolatile memory devices provided from the storage devices. A server device is configured to receive the collected deterioration information and to predict a degree of deterioration of the nonvolatile memory devices in real time by performing machine learning based on the collected deterioration information and initial deterioration information. The client device determines a read level of the nonvolatile memory device based on the degree of deterioration of the nonvolatile memory devices from the server device. The storage device sets the nonvolatile memory device to operate based on the read level determined in the client device.
    Type: Grant
    Filed: June 7, 2017
    Date of Patent: September 24, 2019
    Assignee: Samsung ELectronics Co., Ltd.
    Inventors: Hyunkyo Oh, Seungkyung Ro, Heewon Lee, Seongnam Kwon, Oak-Ha Kim, Donggi Lee
  • Patent number: 10216422
    Abstract: A storage device includes a nonvolatile memory device, a buffer memory, a controller and a neuromorphic chip. The neuromorphic chip is configured to generate an access classifier based on the access result information and the access environment information. The controller is configured to perform first accesses to the nonvolatile memory device using the buffer memory and to collects the access result information and the access environment information of the first accesses in the buffer memory. The controller is configured to perform a second access of the nonvolatile memory device using the buffer memory. The controller is configured to obtain a prediction result of access parameters associated with the second access by using access environment information associated with the second access and the access classifier.
    Type: Grant
    Filed: June 27, 2017
    Date of Patent: February 26, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chanha Kim, Hyunkyo Oh, Oak-Ha Kim, Seungkyung Ro, Jong-Nam Baek, Donggi Lee, Jinwook Lee, Heewon Lee
  • Publication number: 20180143762
    Abstract: A storage device includes a nonvolatile memory device, a buffer memory, a controller and a neuromorphic chip. The neuromorphic chip is configured to generate an access classifier based on the access result information and the access environment information. The controller is configured to perform first accesses to the nonvolatile memory device using the buffer memory and to collects the access result information and the access environment information of the first accesses in the buffer memory. The controller is configured to perform a second access of the nonvolatile memory device using the buffer memory. The controller is configured to obtain a prediction result of access parameters associated with the second access by using access environment information associated with the second access and the access classifier.
    Type: Application
    Filed: June 27, 2017
    Publication date: May 24, 2018
    Inventors: Chanha KIM, Hyunkyo OH, Oak-Ha KIM, Seungkyung RO, Jong-Nam BAEK, Donggi LEE, Jinwook LEE, Heewon LEE
  • Publication number: 20180108422
    Abstract: A memory system includes multiple storage devices that each include a nonvolatile memory device. A client device is configured to collect deterioration information of the nonvolatile memory devices provided from the storage devices. A server device is configured to receive the collected deterioration information and to predict a degree of deterioration of the nonvolatile memory devices in real time by performing machine learning based on the collected deterioration information and initial deterioration information. The client device determines a read level of the nonvolatile memory device based on the degree of deterioration of the nonvolatile memory devices from the server device. The storage device sets the nonvolatile memory device to operate based on the read level determined in the client device.
    Type: Application
    Filed: June 7, 2017
    Publication date: April 19, 2018
    Inventors: HYUNKYO OH, SEUNGKYUNG RO, HEEWON LEE, SEONGNAM KWON, OAK-HA KIM, DONGGI LEE