Abstract: A multilayer electronic component includes: a body including a dielectric layer and internal electrodes alternately disposed while having the dielectric layer interposed therebetween; and external electrodes disposed outside the body, wherein the external electrode includes a lower electrode layer including copper (Cu) and in contact with the internal electrode, an upper electrode layer including silver (Ag) and disposed on the lower electrode layer, and an alloy layer including a copper (Cu)-silver (Ag) alloy and disposed at an interface between the lower electrode layer and the upper electrode layer, and an oxidation region including copper (Cu) oxide is disposed on at least a portion of an external surface of the lower electrode layer.

Abstract: A multilayer electronic component includes: a body including a dielectric layer and internal electrodes alternately disposed while having the dielectric layer interposed therebetween; and external electrodes disposed on the body, wherein the external electrodes include a lower electrode layer including copper (Cu) and glass, an intermediate electrode layer including copper (Cu) and disposed on the lower electrode layer, and an upper electrode layer including silver (Ag) and glass and disposed on the intermediate electrode layer, and an area fraction occupied by a pore in the intermediate electrode layer is smaller than an area fraction occupied by a pore in the lower electrode layer.

Abstract: A multilayer electronic component includes: a body including a dielectric layer and internal electrodes, and having first and second surfaces opposing each other in a first direction, third and fourth surfaces opposing each other in a second direction, and fifth and sixth surfaces opposing each other in a third direction and external electrodes including a connection portion disposed on the third or fourth surfaces and a band portion extending onto portions of the first and second surfaces from the connection portion. The external electrode includes a base alloy layer including Cu—Ag alloy and disposed in the band portion, a lower electrode layer in contact with the internal electrode at the connection portion and in contact with the base alloy layer at the band portion, and an upper electrode layer disposed on the lower electrode layer. The lower electrode layer includes Cu, and the upper electrode layer includes Ag and glass.

Abstract: Disclosed is a discontinuous jump current breaker, in an AC power system having an insulating material that exhibits nonlinear electrical characteristics between two electrodes, which blocks an AC power by observing a discontinuous jump current in which an insulator-metal transition occurs. The discontinuous jump current breaker includes a setting unit that sets the magnitude of a discontinuous jump current, a sensor unit including a metallic wire (Republic of Korea Patent Registration No. 10-1981640) parallel to an AC power wire, located at a separation distance d?0, and that measures electromagnetic waves of an AC power, an amplifier unit that amplifies an analog signal of the metal wire, an analog-to-digital converter that converts the amplified analog signal to digital, a microcontroller unit including a memory unit for storing a program that drives the system, and a power blocking unit that blocks the discontinuous jump current.

Abstract: Provided is a monolithic metal-insulator transition device. The monolithic metal-insulator transition device includes a substrate including a driving region and a switching region, first and second source/drain regions on the driving region, a gate electrode between the first and second source/drain regions, an inlet well region formed adjacent to an upper surface of the substrate on the switching region, a control well region having a different conductivity type from the inlet well region between the inlet well region and a lower surface of the substrate, a first wiring electrically connecting the first source/drain region and the control well region, and a second wiring electrically connecting the second source/drain region and the inlet well region.

Abstract: Provided is a monolithic metal-insulator transition device. The monolithic metal-insulator transition device includes a substrate including a driving region and a switching region, first and second source/drain regions on the driving region, a gate electrode between the first and second source/drain regions, an inlet well region formed adjacent to an upper surface of the substrate on the switching region, a control well region having a different conductivity type from the inlet well region between the inlet well region and a lower surface of the substrate, a first wiring electrically connecting the first source/drain region and the control well region, and a second wiring electrically connecting the second source/drain region and the inlet well region.

Abstract: The present invention relates to a current sensor which measures alternating electromagnetic wave and a current breaker using the same, and the current sensor for alternating current is characterized in that it includes a sensor part arranged at a separation distance from the power wire through which alternating current is flowing; and a means of detecting alternating current by measuring the electromagnetic wave generated across the above sensor part by the electromotive force induced by the alternating current flowing through the above power wire, and in that the above means of detecting alternating current includes an amplifier.

Abstract: The present invention relates to a current sensor which measures alternating electromagnetic wave and a current breaker using the same, and the current sensor for alternating current is characterized in that it includes a sensor part arranged at a separation distance from the power wire through which alternating current is flowing; and a means of detecting alternating current by measuring the electromagnetic wave generated across the above sensor part by the electromotive force induced by the alternating current flowing through the above power wire, and in that the above means of detecting alternating current includes an amplifier.

Abstract: The present disclosure discloses an electrical switchgear configured to control an electro-magnet by using the electro-magnet, a critical temperature device, and an electro-magnet control unit without using a bimetal and a mechanical contact. The electro-magnet switches power applied through a power line in response to a flow of control current to a power device connected to a load side. In a critical temperature device, an output current value varies when a temperature of a heating wire, which is connected to the power line, exceeds a critical temperature by supply current flowing to the power device. An electro-magnet control unit, which is realizable with an SCR, allows a flow of control current of the electro-magnet to be generated or cut off in response to the output current value of the critical temperature device.

Abstract: Electromagnetic sensor of an oxygen-rich vanadium oxide and the system thereof are provided. The electromagnetic sensor of an oxygen-rich vanadium oxide according the embodiment of the present invention comprises; the first substance layer containing silicon doped with an n-type dopant; and the second substance layer arranged on the first substance layer, and containing a vanadium oxide represented by the molecular formula of VxOy. Dopant concentration of the first substance layer can be higher than 1.0×10?5 cm?3 and lower than 1.0×1019 cm?3, while the ratio of y to x in the molecular formula can be larger than 2 and smaller than 2.5.

Abstract: Electromagnetic sensor of an oxygen-rich vanadium oxide and the system thereof are provided. The electromagnetic sensor of an oxygen-rich vanadium oxide according the embodiment of the present invention comprises; the first substance layer containing silicon doped with an n-type dopant; and the second substance layer arranged on the first substance layer, and containing a vanadium oxide represented by the molecular formula of VxOy. Dopant concentration of the first substance layer can be higher than 1.0×1015 cm?3 and lower than 1.0×1019 cm?3, while the ratio of y to x in the molecular formula can be larger than 2 and smaller than 2.5.

Abstract: The inventive concept provides MIT devices molded by clear compound epoxy and fire detecting devices including the MIT device. The fire detecting device is supplied with a power source from a power control device. The fire detecting device includes a MIT device including a MIT chip molded by a clear compound epoxy, a diode bridge circuit supplied with the power source from the power control device for providing a non-polar power source, a notice circuit supplied with the non-polar power source from the diode bridge circuit for warning of a fire alarm in response to a detecting signal from the MIT device, and a stabilization circuit for maintaining the detecting signal for a certain period.

Abstract: The inventive concept provides MIT devices molded by clear compound epoxy and fire detecting devices including the MIT device. The fire detecting device is supplied with a power source from a power control device. The fire detecting device includes a MIT device including a MIT chip molded by a clear compound epoxy, a diode bridge circuit supplied with the power source from the power control device for providing a non-polar power source, a notice circuit supplied with the non-polar power source from the diode bridge circuit for warning of a fire alarm in response to a detecting signal from the MIT device, and a stabilization circuit for maintaining the detecting signal for a certain period.

Abstract: The inventive concept provides MIT devices molded by clear compound epoxy and fire detecting devices including the MIT device. The fire detecting device is supplied with a power source from a power control device. The fire detecting device includes a MIT device including a MIT chip molded by a clear compound epoxy, a diode bridge circuit supplied with the power source from the power control device for providing a non-polar power source, a notice circuit supplied with the non-polar power source from the diode bridge circuit for warning of a fire alarm in response to a detecting signal from the MIT device, and a stabilization circuit for maintaining the detecting signal for a certain period.

Abstract: The inventive concept shows the embodiment of t-switch which is a MIT 3-terminal device based on a Hole-driven MIT theory and a technology for removing an ESD noise signal which is one of applications of the t-switch. The t-switch includes three terminals of Inlet, Outlet and Control, and a metal-insulator transition (MIT) occurs at an Outlet layer by a current flowing through the Control terminal. In the t-switch, a high resistor is connected to the Control terminal and thereby an ESD noise signal of high voltage flows through the Inlet-Outlet without damaging the device.

Abstract: The present disclosure discloses an electrical switchgear configured to control an electro-magnet by using the electro-magnet, a critical temperature device, and an electro-magnet control unit without using a bimetal and a mechanical contact. The electro-magnet switches power applied through a power line in response to a flow of control current to a power device connected to a load side. In a critical temperature device, an output current value varies when a temperature of a heating wire, which is connected to the power line, exceeds a critical temperature by supply current flowing to the power device. An electro-magnet control unit, which is realizable with an SCR, allows a flow of control current of the electro-magnet to be generated or cut off in response to the output current value of the critical temperature device.

Abstract: Provided is a metal-insulator transition (MIT) transistor system including an MIT critical current supply device allowing MIT to occur between a control terminal and an outlet terminal of an MIT transistor for easily and conveniently driving the MIT transistor. A current supplier according to the present invention provides a critical current for allowing an MIT phenomenon to occur between the control terminal and the output terminal of the MIT transistor.

Abstract: Provided is a thermoelectric device including a first electrode, a substrate electrically connected to the first electrode, a thin film on the substrate, and a second electrode on the thin film. The substrate and the thin film may be configured to exhibit a metallic property at a temperature over a critical temperature, thereby having a thermoelectric power of the device that is higher than that of a semiconductor junction.

Abstract: Disclosed is a multipurpose alarm apparatus which includes a smoke sensing unit configured to sense a smoke using a first sensor and a second sensor, each of the first and second sensors including a temperature-sensitive smoke sensor portion disposed between a first electrode and a second electrode; a smoke level measuring unit configured to generate a smoke level measurement signal by comparing a difference between first and second smoke detection signals from the first and second sensors with a reference signal; and a sensing control unit configured to generate a fire alarm signal when the smoke level measurement signal corresponds to a fire generation condition.

Abstract: Provided are metal-semiconductor convergence electric circuit devices. The device includes a semiconductor device, a metal resistor exhibiting resistance increased with an increase in temperature thereof, and an interconnection line connecting the semiconductor device with the metal resistor in series and having a resistance lower than that of the metal resistor. The semiconductor device is configured to exhibit resistance decreased with an increase in temperature thereof and compensate the resistance increase of the metal resistor.