Patents by Inventor I-Cherng Chen
I-Cherng Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240145569Abstract: A semiconductor device includes a field effect transistor (FET). The FET includes a first channel, a first source and a first drain; a second channel, a second source and a second drain; and a gate structure disposed over the first and second channels. The gate structure includes a gate dielectric layer and a gate electrode layer. The first source includes a first crystal semiconductor layer and the second source includes a second crystal semiconductor layer. The first source and the second source are connected by an alloy layer made of one or more Group IV element and one or more transition metal elements. The first crystal semiconductor layer is not in direct contact with the second crystal semiconductor layer.Type: ApplicationFiled: January 4, 2024Publication date: May 2, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yee-Chia YEO, Sung-Li WANG, Chi On CHUI, Jyh-Cherng SHEU, Hung-Li CHIANG, I-Sheng CHEN
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Patent number: 10768135Abstract: An oxidizing gas detection method and an apparatus thereof are provided for trace oxidizing gas detection. The detection method includes the following steps. First, perform an electroreduction reaction and a photoreduction reaction simultaneously to a metal oxide in which nanoconductors are distributed. Next, stop the electroreduction reaction and the photoreduction reaction, and read a resistance of the reduced metal oxide by applying a first pulse-width modulation signal. Next, provide an oxidizing gas to the reduced metal oxide, and photo-catalyze a redox reaction between the oxidizing gas and the reduced metal oxide. Next, read a resistance of the oxidized metal oxide by applying a second pulse-width modulation signal. Next, converse a concentration of the oxidizing gas according to a ratio of the resistance of the oxidized metal oxide and the resistance of the reduced metal oxide.Type: GrantFiled: December 27, 2017Date of Patent: September 8, 2020Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: I-Cherng Chen, Pi-Guey Su, Hong-Ci Syu, Hui-Yu Cho, Pin-Chou Li, Jian-Hong Wu, Ren-Der Jean
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Patent number: 10383537Abstract: A physiological signal measuring method and a physiological signal measuring device are provided. The physiological signal measuring method includes the following steps: A first inputting signal having a first frequency, a second inputting signal having a second frequency and a third inputting signal having a third frequency are respectively inputted to at least two electrode sheets attached on a skin. A first impedance value corresponding to the first inputting signal, a second impedance value corresponding to the second inputting signal and a third impedance value corresponding to the third inputting signal are respectively measured. An interference impedance between the electrode sheets and the skin is obtained according to the first frequency, the second frequency, the third frequency, the first impedance value, the second impedance value and the third impedance value. A measured physiological signal is corrected according to the interference impedance to obtain a corrected physiological signal.Type: GrantFiled: August 18, 2017Date of Patent: August 20, 2019Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Szu-Ju Li, Pai-Hao Wu, I-Cherng Chen, Hsin-Hung Pan, Jung-Hao Wang, Ren-Der Jean, Meng-Song Yin, Chun-Te Chuang
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Publication number: 20190195823Abstract: An oxidizing gas detection method and an apparatus thereof are provided for trace oxidizing gas detection. The detection method includes the following steps. First, perform an electroreduction reaction and a photoreduction reaction simultaneously to a metal oxide in which nanoconductors are distributed. Next, stop the electroreduction reaction and the photoreduction reaction, and read a resistance of the reduced metal oxide by applying a first pulse-width modulation signal. Next, provide an oxidizing gas to the reduced metal oxide, and photo-catalyze a redox reaction between the oxidizing gas and the reduced metal oxide. Next, read a resistance of the oxidized metal oxide by applying a second pulse-width modulation signal. Next, converse a concentration of the oxidizing gas according to a ratio of the resistance of the oxidized metal oxide and the resistance of the reduced metal oxide.Type: ApplicationFiled: December 27, 2017Publication date: June 27, 2019Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: I-Cherng CHEN, Pi-Guey SU, Hong-Ci SYU, Hui-Yu CHO, Pin-Chou LI, Jian-Hong WU, Ren-Der JEAN
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Publication number: 20180168474Abstract: A physiological signal measuring method and a physiological signal measuring device are provided. The physiological signal measuring method includes the following steps: A first inputting signal having a first frequency, a second inputting signal having a second frequency and a third inputting signal having a third frequency are respectively inputted to at least two electrode sheets attached on a skin. A first impedance value corresponding to the first inputting signal, a second impedance value corresponding to the second inputting signal and a third impedance value corresponding to the third inputting signal are respectively measured. An interference impedance between the electrode sheets and the skin is obtained according to the first frequency, the second frequency, the third frequency, the first impedance value, the second impedance value and the third impedance value. A measured physiological signal is corrected according to the interference impedance to obtain a corrected physiological signal.Type: ApplicationFiled: August 18, 2017Publication date: June 21, 2018Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Szu-Ju LI, Pai-Hao WU, I-Cherng CHEN, Hsin-Hung PAN, Jung-Hao WANG, Ren-Der JEAN, Meng-Song YIN, Chun-Te CHUANG
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Patent number: 9201035Abstract: A gas detecting system, device and method use a variable pulse voltage waveform to increase the temperature of a detecting unit of the gas detecting system so it reacts with gas molecules from a particular space, and outputs a sensing signal. A processing unit of the gas detecting system then performs calculations on the sensing signal, such that an analysis unit may determine the presence of a target gas in the particular space, and further the composition and concentration of the target gas within the particular space, thus providing a detection that is accurate, rapid and convenient.Type: GrantFiled: April 20, 2012Date of Patent: December 1, 2015Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Chun-Te Chuang, Chun-Hsun Chu, I-Cherng Chen, Nai-Hao Kuo
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Publication number: 20130211732Abstract: A gas detecting system, device and method use a variable pulse voltage waveform to increase the temperature of a detecting unit of the gas detecting system so it reacts with gas molecules from a particular space, and outputs a sensing signal. A processing unit of the gas detecting system then performs calculations on the sensing signal, such that an analysis unit may determine the presence of a target gas in the particular space, and further the composition and concentration of the target gas within the particular space, thus providing a detection that is accurate, rapid and convenient.Type: ApplicationFiled: April 20, 2012Publication date: August 15, 2013Inventors: Chun-Te CHUANG, Chun-Hsun Chu, I-Cherng Chen, Nai-Hao Kuo
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Patent number: 8501101Abstract: A gas sensor is provided. The substrate of the gas sensor has a first surface, a second surface and a cavity. The cavity has an opening at the first surface. An insulating film is disposed on the first surface and covers the opening. A heating unit is embedded in the insulating film and located above the opening. An electrode pair is disposed on the insulating film and electrically separated from the heating unit. A buffer layer is disposed on the insulating film and located above the heating unit. The buffer layer is electrically connected to the electrode pair, and at least part of an orthogonal projection of the buffer layer on the first surface is located on the substrate next to the opening. The gas sensing layer is disposed on the buffer layer and has a nano-catalyst therein.Type: GrantFiled: December 27, 2010Date of Patent: August 6, 2013Assignee: Industrial Technology Research InstituteInventors: I-Cherng Chen, Nai-Hao Kuo, Arthur Lin
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Publication number: 20120138459Abstract: A gas sensor is provided. The substrate of the gas sensor has a first surface, a second surface and a cavity. The cavity has an opening at the first surface. An insulating film is disposed on the first surface and covers the opening. A heating unit is embedded in the insulating film and located above the opening. An electrode pair is disposed on the insulating film and electrically separated from the heating unit. A buffer layer is disposed on the insulating film and located above the heating unit. The buffer layer is electrically connected to the electrode pair, and at least part of an orthogonal projection of the buffer layer on the first surface is located on the substrate next to the opening. The gas sensing layer is disposed on the buffer layer and has a nano-catalyst therein.Type: ApplicationFiled: December 27, 2010Publication date: June 7, 2012Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: I-Cherng Chen, Nai-Hao Kuo, Arthur Lin
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Patent number: 7631540Abstract: A gas sensor is disclosed, which includes two separate metal electrodes on a surface of a substrate and a semiconductor thin film deposited on the surface of the substrate and connecting the two metal electrodes. The semiconductor thin film contains zinc oxide or a mixed oxide of zinc and indium, and the zinc oxide or the mixed oxide of zinc and indium are in the form of nanowires which constitute a gas-sensing surface of the semiconductor thin film. The nanowires have a diameter of 50-900 nm. The present invention also discloses a method for detecting the presence of a NOx gas.Type: GrantFiled: September 14, 2007Date of Patent: December 15, 2009Assignee: Industrial Technology Research InstituteInventors: Miao-Ju Chueh, Pi-Guey Su, Yih-Shiaw Huang, I-Cherng Chen, Tung-Sheng Shih
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Patent number: 7350396Abstract: A pulse-type gas concentration measurement system and a method of pulse-type gas concentration measurement in a specific environment. When the sensor is located at a specific position, a variable pulse-modulated voltage is sent to the sensor, so that the sensor outputs a first signal to the processing device. The processing device compares the first signal to the chemical matter characteristics signals to determine the composition and concentration of respective constituents in the gas, and determines a detection voltage according to the first signal. Then, a square-wave pulse with the detection voltage is sent intermittently to the sensor, so that the sensor outputs a second signal to the processing device. The processing device compares the second signal to the chemical matter characteristics signal to determine the concentration variation of each respective constituent of the gas.Type: GrantFiled: December 24, 2003Date of Patent: April 1, 2008Assignee: Industrial Technology Research InstituteInventors: Yih-Shiaw Huang, Miao-Ju Chueh, I-Cherng Chen, Tung-Sheng Shih
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Publication number: 20080006078Abstract: A gas sensor is disclosed, which includes two separate metal electrodes on a surface of a substrate and a semiconductor thin film deposited on the surface of the substrate and connecting the two metal electrodes. The semiconductor thin film contains zinc oxide or a mixed oxide of zinc and indium, and the zinc oxide or the mixed oxide of zinc and indium are in the form of nanowires which constitute a gas-sensing surface of the semiconductor thin film. The nanowires have a diameter of 50-900 nm. The present invention also discloses a method for detecting the presence of a NOx gas.Type: ApplicationFiled: September 14, 2007Publication date: January 10, 2008Applicant: Industrial Technology Research InstituteInventors: Miao-Ju Chueh, Pi-Guey Su, Yih-Shiaw Huang, I-Cherng Chen, Tung-Sheng Shih
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Patent number: 7235129Abstract: A method for forming an array of zinc oxide nanowires on a substrate is disclosed, which includes forming a crystal phase adjusting buffer on the surface of the substrate and growing 1D zinc oxide nanowires on the buffer by zinc vapor deposition, which are normal to the surface of the substrate. The crystal phase adjusting buffer includes, for example, nitride and oxide layers on a silicon substrate, or a gallium nitride epitaxial layer on a sapphire substrate, and is used as a growth buffer layer for the zinc oxide nanowires. The zinc vapor phase deposition includes forming a zinc oxide layer on the crystal phase adjusting buffer and forming vertical zinc oxide nanowires on the zinc oxide layer.Type: GrantFiled: April 13, 2004Date of Patent: June 26, 2007Assignee: Industrial Technology Research InstituteInventors: I-Cherng Chen, Yung-Kuan Tseng, Chor-Jye Huang
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Publication number: 20060147968Abstract: The present invention provides a biochip substrate used for immobilizing biomaterials, which has a matrix and at least one metal oxide thread-like nano-object formed vertically on a surface of the matrix. The metal oxide thread-like nano-object is employed for immobilizing the biomaterial onto the matrix of the chip substrate directly, without complicated immobilizing processes by using cross-linking agents or curing agents, and thereby simplifying the process of fabrication. Arrangement as such makes it suitable for purification of a biomaterial. On the other hand, the metal oxide thread-like nano-object characterized by having an enormous surface area is suitable for fabricating immunosensor chip and capable of maintaining high activity and reactivity of biomaterials, so as to increase speed and yield of reactions.Type: ApplicationFiled: December 27, 2005Publication date: July 6, 2006Inventors: I-Cherng Chen, Cheng-Liang Hsu, Chung-I Kuo, Jyisy Yang, Ruo-Lan Chang
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Publication number: 20060102494Abstract: A gas sensor is disclosed, which includes two separate metal electrodes on a surface of a substrate and a semiconductor thin film deposited on the surface of the substrate and connecting the two metal electrodes. The semiconductor thin film contains zinc oxide or a mixed oxide of zinc and indium, and the zinc oxide or the mixed oxide of zinc and indium are in the form of nanowires which constitute a gas-sensing surface of the semiconductor thin film. The nanowires have a diameter of 50-900 nm. The present invention also discloses a method for detecting the presence of a NOx gas.Type: ApplicationFiled: May 11, 2005Publication date: May 18, 2006Applicant: Industrial Technology Research InstituteInventors: Miao-Ju Chueh, Pi-Guey Su, Yih-Shiaw Huang, I-Cherng Chen, Tung-Sheng Shih
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Publication number: 20060093741Abstract: The specification discloses a material with a surface nanometer functional structure and the method of manufacturing the same. Using the properties of supercritical fluids, a nanometer structure is formed on the surface of a substrate, resulting in a material with a surface nanometer functional structure. The supercritical fluid carries the precursor of functional materials. Once they reach a reaction balance with the substrate in a high-pressure container, the pressure is released at an appropriate speed. The carbon dioxide supercritical fluid undergoes a vaporization reaction, distributing and adhering the precursors on the substrate to form the surface nanometer functional structure. Utilizing the VLS nanowire growth method, one-dimensional and two-dimensional compound nanometer functional wire structure can be produced.Type: ApplicationFiled: December 9, 2005Publication date: May 4, 2006Inventors: I-Cherng Chen, Yung-Kuan Tseng, Tzer-Shen Lin
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Publication number: 20050223969Abstract: A method for forming an array of zinc oxide nanowires on a substrate is disclosed, which includes forming a crystal phase adjusting buffer on the surface of the substrate and growing 1D zinc oxide nanowires on the buffer by zinc vapor deposition, which are normal to the surface of the substrate. The crystal phase adjusting buffer includes, for example, nitride and oxide layers on a silicon substrate, or a gallium nitride epitaxial layer on a sapphire substrate, and is used as a growth buffer layer for the zinc oxide nanowires. The zinc vapor phase deposition includes forming a zinc oxide layer on the crystal phase adjusting buffer and forming vertical zinc oxide nanowires on the zinc oxide layer.Type: ApplicationFiled: April 13, 2004Publication date: October 13, 2005Applicant: Industrial Technology Research InstituteInventors: I-Cherng Chen, Yung-Kuan Tseng, Chor-Jye Huang
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Publication number: 20050045494Abstract: A pulse-type gas concentration measurement system and a method of pulse-type gas concentration measurement in a specific environment. When the sensor is located at a specific position, a variable pulse-modulated voltage is sent to the sensor, so that the sensor outputs a first signal to the processing device. The processing device compares the first signal to the chemical matter characteristics signals to determine the composition and concentration of respective constituents in the gas, and determines a detection voltage according to the first signal. Then, a square-wave pulse with the detection voltage is sent intermittently to the sensor, so that the sensor outputs a second signal to the processing device. The processing device compares the second signal to the chemical matter characteristics signal to determine the concentration variation of each respective constituent of the gas.Type: ApplicationFiled: December 24, 2003Publication date: March 3, 2005Inventors: Yih-Shiaw Huang, Miao-Ju Chueh, I-Cherng Chen, Tung-Sheng Shih
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Publication number: 20040137214Abstract: The specification discloses a material with a surface nanometer functional structure and the method of manufacturing the same. Using the properties of supercritical fluids, a nanometer structure is formed on the surface of a substrate, resulting in a material with a surface nanometer functional structure. The supercritical fluid carries the precursor of functional materials. Once they reach a reaction balance with the substrate in a high-pressure container, the pressure is released at an appropriate speed. The carbon dioxide supercritical fluid undergoes a vaporization reaction, distributing and adhering the precursors on the substrate to form the surface nanometer functional structure. Utilizing the VLS nanowire growth method, one-dimensional and two-dimensional compound nanometer functional wire structure can be produced.Type: ApplicationFiled: October 23, 2003Publication date: July 15, 2004Inventors: I-Cherng Chen, Yung-Kuan Tseng, Tzer-Shen Lin
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Patent number: 6739180Abstract: An intelligent gas identification system and method of gas identification in a specific environment. The intelligent gas identification system has a sensor, a pulse power supply module, and a processing device in which a plurality of chemical matter characteristics signals is stored. When the sensor is disposed in the specific environment, the pulse power supply module sends a variable pulse-amplitude-modulated voltage to the sensor, so that the sensor outputs a signal to the processing device. The processing device compares the outgoing signal to the chemical matter characteristics signals to determine an identification result for the gas.Type: GrantFiled: March 10, 2003Date of Patent: May 25, 2004Assignee: Industrial Technology Research InstituteInventors: Yi-Shiao Huang, I-Cherng Chen, Chien-Hsiung Tai, Wen-Yuan Tsai