Patents by Inventor I-Cherng Chen

I-Cherng Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20040040371
    Abstract: An intelligent gas identification system and method of gas identification in a specific environment. The intelligent gas identification system has a sensor, a pulse power supply module, and a processing device in which a plurality of chemical matter characteristics signals is stored. When the sensor is disposed in the specific environment, the pulse power supply module sends a variable pulse-amplitude-modulated voltage to the sensor, so that the sensor outputs a signal to the processing device. The processing device compares the outgoing signal to the chemical matter characteristics signals to determine an identification result for the gas.
    Type: Application
    Filed: March 10, 2003
    Publication date: March 4, 2004
    Applicant: Industrial Technology Research Institute
    Inventors: Yi-Shiao Huang, I-Cherng Chen, Chien-Hsiung Tai, Wen-Yuan Tsai
  • Patent number: 5434551
    Abstract: A gas sensor that has its heater and sensing layer on opposite sides of the substrate. The gas sensor includes a buffer layer separating the gas-sensing layer from the substrate to improve mechanical strength and electrical properties. The heater is preferably formed of nickel paste and is provided on the back of the substrate.
    Type: Grant
    Filed: July 27, 1993
    Date of Patent: July 18, 1995
    Assignee: Industrial Technology Research Institute
    Inventors: I-Cherng Chen, Ming-Hann Tzeng, Ping-Ping Tsai, Chiu-Fong Liaw, James C. H. Ku
  • Patent number: 5273779
    Abstract: A method of fabricating a gas sensor which comprises a substrate; a buffer layer coated on the substrate; at least one gas sensing layer arranged on the buffer layer; a pair of electrodes disposed on the gas sensing layer; and a catalytic layer coated on the gas sensing layer. A spin coating process is performed, using centrifugal force, to form the layers which are thin and evenly deposited on the substrate. The gas sensing layer of the gas sensor is formed before forming the electrodes of the same such that the heat treatment thereto can be carried out at 800.degree. C. which is much higher than the conventional temperature of 600.degree. C. The bonding of the gas sensing layer to the substrate is thereby much stronger than the conventional gas sensor.
    Type: Grant
    Filed: December 9, 1991
    Date of Patent: December 28, 1993
    Assignee: Industrial Technology Research Institute
    Inventors: I-Cherng Chen, Ming-Hann Tzeng, Ping-Ping Tsai, Chiu-Fong Liaw, James C. H. Ku