Abstract: A bonding pad structure for an image sensor device and a method of fabrication thereof. The image sensor device has a radiation-sensor region including a substrate and a radiation detection device, and a bonding pad region including the bonding pad structure. The bonding pad structure includes: an interconnect layer; an interlayer dielectric layer (IDL), both layers extending from under the substrate into the bonding pad region; an isolation layer formed on IDL; a conductive pad having a planar portion and one or more bridging portions extending perpendicularly from the planar portion, through the IDL and isolation layers, and to the interconnect layer; and a plurality of non-conducting stress-releasing structures disposed between the isolation layer and the conductive pad in such a way to adjoin its planar and the bridging portions together for releasing potential pulling stress applied thereon and preventing a conductive pad peeling.

Abstract: A semiconductor device includes a first layer including a number of first layer metal pads, a second layer formed on top of the first layer, the second layer including a number of second layer metal pads, and vias connecting the first layer metal pads to the second layer metal pads. A surface area overlap between the first layer metal pads and the second layer metal pads is below a defined threshold.

Abstract: A semiconductor device includes a first layer including a number of first layer metal pads, a second layer formed on top of the first layer, the second layer including a number of second layer metal pads, and vias connecting the first layer metal pads to the second layer metal pads. A surface area overlap between the first layer metal pads and the second layer metal pads is below a defined threshold.

Abstract: A semiconductor device includes a gate structure on a substrate; a raised source/drain region adjacent to the gate structure; and an interconnect plug on the doped region. The raised source/drain region includes a top surface being elevated from a surface of the substrate; and a doped region exposed on the top surface. The doped region includes a dopant concentration greater than any other portions of the raised source/drain region. A bottommost portion of the interconnect plug includes a width approximate to a width of the doped region.

Abstract: A semiconductor device includes a metal oxide semiconductor device disposed over a substrate and an interconnect plug. The metal oxide semiconductor device includes a gate structure located on the substrate and a raised source/drain region disposed adjacent to the gate structure. The raised source/drain region includes a top surface above a surface of the substrate by a distance. The interconnect plug connects to the raised source/drain region. The interconnect plug includes a doped region contacting the top surface of the raised source/drain region, a metal silicide region located on the doped region, and a metal region located on the metal silicide region.

Abstract: A semiconductor device and a method of fabricating the semiconductor device are provided. The semiconductor device includes a substrate; a source/drain region having a first dopant in the substrate; a barrier layer having a second dopant formed around the source/drain region in the substrate. When a semiconductor device is scaled down, the doped profile in source/drain regions might affect the threshold voltage uniformity, the provided semiconductor device may improve the threshold voltage uniformity by the barrier layer to control the doped profile.

Abstract: A semiconductor device includes a p-type metal oxide semiconductor device (PMOS) and an n-type metal oxide semiconductor device (NMOS) disposed over a substrate. The PMOS has a first gate structure located on the substrate, a carbon doped n-type well disposed under the first gate structure, a first channel region disposed in the carbon doped n-type well, and activated first source/drain regions disposed on opposite sides of the first channel region. The NMOS has a second gate structure located on the substrate, a carbon doped p-type well disposed under the second gate structure, a second channel region disposed in the carbon doped p-type well, and activated second source/drain regions disposed on opposite sides of the second channel region.

Abstract: Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate. The semiconductor device also includes an isolation structure in the semiconductor substrate and surrounding an active region of the semiconductor substrate. The semiconductor device includes a gate over the semiconductor substrate. The gate has an intermediate portion over the active region and two end portions connected to the intermediate portion. Each of the end portions has a first gate length longer than a second gate length of the intermediate portion and is located over the isolation structure.

Abstract: Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and an isolation structure in the semiconductor substrate and surrounding an active region of the semiconductor substrate. The semiconductor device also includes a gate over the semiconductor substrate, and the gate has an intermediate portion over the active region and two end portions connected to the intermediate portion, and the end portions are over the isolation structure. The semiconductor device further includes a support film over the isolation structure and covering the isolation structure and at least one of the end portions of the gate. The support film exposes the active region and the intermediate portion of the gate.

Abstract: A semiconductor device includes a first layer including a number of first layer metal pads, a second layer formed on top of the first layer, the second layer including a number of second layer metal pads, and vias connecting the first layer metal pads to the second layer metal pads. A surface area overlap between the first layer metal pads and the second layer metal pads is below a defined threshold.

Abstract: A semiconductor device including a light sensing region disposed on a substrate is provided that includes a bond structure having one or more patterned layers underlying the pad element. The pad element may be coupled to the light sensing region and may be formed in a first metal layer disposed on the substrate. A second metal layer of the device has a first bond region, a region of the second metal layer that underlies the pad element. This first bond region of the second metal layer includes a pattern of a plurality of conductive lines interposed by dielectric. A via connects the pad element and the second metal layer.

Abstract: A remote control method applied in a mobile device whereby movements of the mobile device are detected via an acceleration sensor internally installed in the mobile device. An acceleration generated according to the movement is determined as being smaller or greater than a predetermined threshold value. If the acceleration is equal to or greater than the predetermined threshold value, a control instruction is generated. The control instruction is transmitted to an electronic device via a wireless network module of the mobile device to trigger a preset switch operation between the mobile device and the electronic device.

Abstract: A set top box, communicating with a handheld device, authenticates the handheld device according to an authenticating signal received from the handheld device, and assigns a unique identifier to the handheld device that has been authenticated. The set top box further stores the unique identifier into a user favorite table, sets the set top box according to a setting signal received from the handheld device that has been authenticated, and stores a user favorite recorded in the setting signal and the unique identifier of the handheld device into the user favorite table.

Abstract: An electronic program guide (EPG) server bridges at least one middleware server with at least one set-top box (STB). The EPG server transmits an EPG request to the middleware server to receive electronic program guides comprising one or more different file formats to the middleware server and transforms the EPGs into EPGs having a preset file format. The EPG server further transmits the EPGs with the preset file format to the at least one STB.

Abstract: A replayable TV system (100) comprises a multicast server (10), access to an IP TV network (20), a media server (30), at least one set top box (40), and a time-shift server (50). The multicast server multicasts a TV program to the media server and the at least one set top box through the IP TV network. The time-shift server controls the media server to record the program. At any time point during the multicasting of a TV program, if a set top box requests the time-shift server replay the TV program, the time-shift server sends the uniform resource locator corresponding to the TV program to the set top box. The set top box switches automatically from multicast unicast mode and receives the recorded program from the media server.