Abstract: The present invention provides a method of forming a liquid crystal display (LCD). Active layers of N-type and P-type low temperature polysilicon thin film transistors and a bottom electrode of a storage capacitor are formed first. Then a N-type source/drain is formed and the bottom electrode is doped with dopants. A gate insulator, a gate electrode, a capacitor dielectric, and a top electrode are thereafter formed. After that, a P-type source/drain is formed. Finally, a source interconnect, a drain interconnect, and a pixel electrode of the liquid crystal display are formed.

Abstract: A six mask-steps method for fabricating liquid crystal display is described. A driving area and a pixel area are defined by a first mask step. Gates on the driving/pixel area and upper electrodes of capacitors on the pixel area are defined by a second mask step. Then, using the gates and the upper electrodes as a mask, a source/drain, channel region and lower electrode are formed in the driving/pixel area by an ion-doping process. A second insulation layer is formed and covers the insulation substrate. A plurality of first openings is formed by the third mask step and the gate and the source/drain are exposed. A second conductive layer is formed and covers the second insulation layer and the first opening is filled. Then, the second conductive layer is patterned, and a source/drain line is formed and contacts electrically with the source/drain by the fourth mask step. A dielectric layer is formed and covers the second insulation layer and the second conductive layer; the dielectric layer has a planar surface.

Abstract: A liquid crystal display device that includes a pixel electrode, a liquid crystal layer, a first dielectric layer formed between the pixel electrode and the liquid crystal layer having a first index of refraction and a first optical thickness, and a second dielectric layer formed between the first dielectric layer and the liquid crystal layer having a second index of refraction and a second optical thickness, wherein the second index of refraction is larger than the first index of refraction and the second optical thickness is larger than the first optical thickness.

Abstract: A method of fabricating a polysilicon film by an excimer laser annealing process is introduced. First, an amorphous silicon film is deposited on a substrate composed of glass. The amorphous silicon film includes a first region, which is located in the center, with a first thickness, and a second region, which is located in the periphery, with a slant sidewall. The thickness of the amorphous silicon film is measured so as to obtain the profile of the sidewall in the second region. According to the profile of the sidewall, a pre-curser region is determined for performing an excimer laser annealing process wherein a second thickness in the boundary of the pre-curser region is smaller than the first thickness so as to increase area of produced polysilicon film.

Abstract: A liquid crystal display includes a reflective pixel electrode, a transparent electrode, a liquid crystal layer and a transparent conductive layer. The transparent electrode cooperates with the reflective pixel electrode to provide a driving voltage. The liquid crystal layer includes a plurality of liquid crystal molecules and is sandwiched between the reflective pixel electrode and the transparent electrode to align in a predetermined manner in response to the driving voltage. The transparent conductive layer is disposed between the reflective pixel electrode and the liquid crystal layer for protecting the reflective pixel electrode and enhancing the reflectivity of the pixel electrode without undesirably consuming the driving voltage.

Abstract: A six mask-steps method for fabricating liquid crystal display is described. A driving area and a pixel area are defined by a first mask step. Gates on the driving/pixel area and upper electrodes of capacitors on the pixel area are defined by a second mask step. Then, using the gates and the upper electrodes as a mask, a source/drain, channel region and lower electrode are formed in the driving/pixel area by an ion-doping process. A second insulation layer is formed and covers the insulation substrate. A plurality of first openings is formed by the third mask step and the gate and the source/drain are exposed. A second conductive layer is formed and covers the second insulation layer and the first opening is filled. Then, the second conductive layer is patterned, and a source/drain line is formed and contacts electrically with the source/drain by the fourth mask step. A dielectric layer is formed and covers the second insulation layer and the second conductive layer; the dielectric layer has a planar surface.

Abstract: A thin film transistor (TFT) and method of fabricating the same. A planarization layer of polymer is formed on the interlayer to reduce short-circuit. The planarization layer further reduces the capacitance of the crossover capacitor and the delay time of the LCD panel using the TFT is therefor minimized. A gate thereof can be design under the data line to increase aperture ratio.

Abstract: A thin film transistor having an improved reliability and a method of manufacturing the same are provided, which can produce a high quality thin film transistor device and array. The manufacturing method includes the steps of: forming a poly-Si island on a substrate; depositing a silicon oxide layer to cover the substrate and the poly-Si island, and then depositing a silicon nitride layer on the silicon oxide layer; forming a metal layer on the silicon nitride layer, and then patterning the metal layer to form a gate; using the gate as a mask and etching the silicon nitride layer to remove a portion of the silicon nitride layer, which is not covered by the gate; forming source/drain regions in the poly-Si layer on both sides of the gate, and then depositing an interlayer to cover the silicon oxide layer and the gate; and forming contact holes in the interlayer and the silicon oxide layer above the source/drain regions, and then filling conductive plugs in the contact holes.

Abstract: A thin film transistor (TFT) and method of fabricating the same. A planarization layer of polymer is formed on the interlayer to reduce short-circuit. The planarization layer further reduces the capacitance of the crossover capacitor and the delay time of the LCD panel using the TFT is therefor minimized. A gate thereof can be design under the data line to increase aperture ratio.

Abstract: A thin film transistor having an improved reliability and a method of manufacturing the same are provided, which can produce a high quality thin film transistor device and array. The manufacturing method includes the steps of: forming a poly-Si island on a substrate; depositing a silicon oxide layer to cover the substrate and the poly-Si island, and then depositing a silicon nitride layer on the silicon oxide layer; forming a metal layer on the silicon nitride layer, and then patterning the metal layer to form a gate; using the gate as a mask and etching the silicon nitride layer to remove a portion of the silicon nitride layer, which is not covered by the gate; forming source/drain regions in the poly-Si layer on both sides of the gate, and then depositing an interlayer to cover the silicon oxide layer and the gate; and forming contact holes in the interlayer and the silicon oxide layer above the source/drain regions, and then filling conductive plugs in the contact holes.

Abstract: A method for manufacturing TFT (Thin Film Transistor) panel with high transmittance includes an intermediate-layer process. After the intermediate-layer process has been executed, the TFT panel is etched to remove the silicon nitride layer without coverage of the source conductive pattern and the drain conductive pattern. The transmittance of the portion of the TFT without shield of the source conductive pattern and the drain conductive pattern is thus higher than that of the portion of the TFT with the shield of the source conductive pattern and the drain conductive pattern. The intermediate-layer process in the preferred embodiment of the present invention has three aspects. In the first aspect, the first step is to bake the TFT panel. The second step is to form the contact hole in the insulating layer of the TFT panel. The third step is to form the source conductive pattern and the drain conductive pattern.

Abstract: A laser scanning system suitable for annealing applications is described. The problem of keeping the window (through which the laser shines into the system) clean, even though the laser ejects a considerable amount of debris, has been solved by inserting a moveable shutter close to the window between it and the substrate. The center portion of the shutter is an insert of optical quality quartz that is just large enough to allow the laser beam to pass through unimpeded and undiverted. By moving the beam and the shutter in concert it is ensured that the beam always passes through the insert. Most of the debris ejected by the laser as a side effect of its operation is trapped on the shutter. Relatively little material ends up on the quartz insert but when sufficient has accumulated there, the insert can be replaced at much lower cost than replacing the window. By moving the beam back and forth together with movement of the substrate, the entire area of the film on the substrate may be scanned by the beam.

Abstract: A laser scanning system suitable for annealing applications is described. The problem of keeping the window (through which the laser shines into the system) clean, even though the laser ejects a considerable amount of debris, has been solved by inserting a moveable shutter close to the window between it and the substrate. The center portion of the shutter is an insert of optical quality quartz that is just large enough to allow the laser beam to pass through unimpeded and undiverted. By moving the beam and the shutter in concert it is ensured that the beam always passes through the insert. Most of the debris ejected by the laser as a side effect of its operation is trapped on the shutter. Relatively little material ends up on the quartz insert but when sufficient has accumulated there, the insert can be replaced at much lower cost than replacing the window. By moving the beam back and forth together with movement of the substrate, the entire area of the film on the substrate may be scanned by the beam.