Patents by Inventor Ian Roberts
Ian Roberts has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Injector for injection of pre-polarised fluid into a patient for magnetic resonance (MR) measurement
Patent number: 6208885Abstract: A patient bed (1) of an MR imaging apparatus is provided with a tube (17) through which pre-polarised fluid can be injected into a patient in order to improve contrast when imaging veins, arteries or other vessels in the body. Fluid is delivered from pump (2) into a high field polarising magnet (3) and along a tube (4) to the patient. Valve (5) is provided so that fluid in the tube (4) downstream of the pre-polarised fluid can be discarded rather than being injected in the patient, and is associated with a reservoir into which the fluid to be discarded and the pre-polarised fluid can be rapidly injected. Then, when the pre-polarised fluid is injected into the patient, its magnetisation has not deteriorated by as much as it would have done if the tube (4) had been directly connected into the patient.Type: GrantFiled: January 4, 1999Date of Patent: March 27, 2001Assignee: Picker International, Inc.Inventors: Ian Robert Young, Joseph Vilmos Hajnal, Alasdair Stewart Hall -
Patent number: 6197946Abstract: Peptides can be produced in and purified from the milk of transgenic animals. The peptides are made as fusion proteins with a suitable fusion partner such as &agr;-lactalbumin, which is a natural milk protein. The fusion partner protein acts to promote secretion of the peptides and, at least in the case of &agr;-lactalbumin, allows a single-step purification based on specific affinity. The peptide is released from the purified fusion protein by a simple cleavage step and purified away from the now liberated &agr;-lactalbumin by repeating the same affinity purification method. A particular advantage of producing peptides via this route, in addition to the obvious advantages of high yield and biocompatibility, is that specific post-translational modifications, such as carboxy terminal amidation, can be performed in the mammary gland.Type: GrantFiled: September 25, 1997Date of Patent: March 6, 2001Assignee: PPL Therapeutics (Scotland) LimitedInventors: Ian Robert Cottingham, Ian Garner
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Patent number: 6177000Abstract: A biosensor has a lipid membrane (7) containing gated ion channels sensitive to the presence or otherwise of an analyte molecule in a sample applied, in use, to a first side of the lipid membrane (7). The lipid membrane (7) is disposed between a pair of electrodes (1, 2) in which a first layer of porous gel (4) is applied to the first side of the lipid membrane (7).Type: GrantFiled: March 13, 2000Date of Patent: January 23, 2001Assignee: Coventry UniversityInventor: Ian Robert Peterson
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Patent number: 6177058Abstract: The present invention provides compositions that are intimate mixtures of hydrogen fluoride and a polymer. The compositions of the invention are less hazardous and, therefore, more conveniently stored, transported, and handled in comparison to pure hydrogen fluoride. Further, the hydrogen fluoride may be readily recovered from the compositions of the invention for use.Type: GrantFiled: March 7, 1996Date of Patent: January 23, 2001Assignee: AlliedSignal Inc.Inventors: Rajiv Ratna Singh, Harold John Kieta, Matthew Hermes Luly, Jeffrey Warren McKown, Tadeusz Piotr Rygas, Ian Robert Shankland
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Patent number: 6171240Abstract: A radio frequency coil (12, 19) adapted for use in interventional magnetic resonance imaging consists of a loop of an elongated electric conductor arranged to form a twisted wire pair (12, 19) and means associated with it for operating the coil both in transmit and receive mode, in order that the coil does not image anything but tracks its own path on an MR image, without affecting the magnetization in the main bulk of the body being imaged.Type: GrantFiled: December 5, 1997Date of Patent: January 9, 2001Assignee: Picker International, Inc.Inventors: Ian Robert Young, Michael Burl, Jukka I Tanttu
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Patent number: 6162650Abstract: A test device and method for determining parameters of a plurality of vias formed into a dielectric material making contact to a buried conductive layer. The present invention is comprised of a sample structure disposed within the material through which a plurality of vias are to be formed. The sample structure is adapted to enhance secondary electron yield from the via bottom during a scanning electron microscope examination of the vias. Additionally, the plurality of vias to be formed are disposed intentionally offset with respect to the sample structure. As a result, the enhanced secondary electron yield from the sample structure characterizes the degree of misalignment present in the via formation process. In so doing, the present invention simultaneously quantifies the critical dimension of the vias, the alignment/registration of the via formation process, and determines whether or not the vias are etched to a minimum desired depth.Type: GrantFiled: October 5, 1998Date of Patent: December 19, 2000Assignee: VLSI Technology, Inc.Inventors: Ian Robert Harvey, Satyendra Sethi
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Patent number: 6125458Abstract: There is described a method of operating a fault management system for an access network which forms part of a public telecommunications network. In the access network, terminating lines in the form of pairs of copper wires extend from a local switch through a series of nodes to terminal equipment provided for a use of the network. The fault management system includes a test head and an access network management system. Each night, the test head performs a series of tests on each of the terminating lines. The results of the tests are transmitted to the access network management system. The test results are then converted into circuit scores, each of which are indicative of the operational quality of the tested circuit. For each node, the circuit scores of the tested circuits passing through the node are combined to produce a node score which is indicative of the operational quality of the node.Type: GrantFiled: March 12, 1998Date of Patent: September 26, 2000Assignee: British TelecommunicationsInventors: Ian Robert Devan, Andrew David Chaskell
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Patent number: 6113803Abstract: The present invention provides refrigerant blends which are replacements for chlorodifluoromethane (HCFC-22). The present blends have refrigeration characteristics which are similar to HCFC-22. The blends comprise from about 10 to about 90 weight percent of a first component selected from the group consisting of 1,1,1-trifluoroethane, difluoromethane, propane, and mixtures thereof; from about 1 to about 50 weight percent of a second component selected from the group consisting of hydrofluorocarbon having 1 to 3 carbon atoms, fluorocarbon having 1 to 3 carbon atoms, inorganic compound, and mixtures thereof having a boiling point at atmospheric pressure in the range from about -90 degrees C to less than -50 degrees C; and from about 1 to about 50 weight percent of a third component which is hydrofluorocarbon having 1 to 3 carbon atoms, other than 1,1,1-trifluoroethane, having a boiling point at atmospheric pressure in the range from about -50 degrees C to about -10 degrees C.Type: GrantFiled: February 9, 1998Date of Patent: September 5, 2000Assignee: AlliedSignal Inc.Inventors: Robert G. Richard, Ian Robert Shankland, Rajiv Ratna Singh
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Patent number: 6111410Abstract: A magnet having a yoke and a pair of poles coupled to the yoke in a spaced apart relationship includes a pair of energization coils in proximity to each of the poles for creating a magnetic field of a desired strength. A pair of prepolarization coils are also disposed in proximity to each of the poles to vary the strength of the magnetic field during a nuclear magnetic resonance prepolarization procedure. In order to minimize the amount of eddy currents introduced to the yoke during the prepolarization procedure the poles are comprised of magnetically effective and substantially non-electrically conductive material. Magnetically effective material includes material having a low hystresis. To further reduce the amount of eddy currents introduced to yoke, a flux is created having a sense substantially opposite of that produced by the energization coil. Such opposing flux may be produced by the prepolarization coils and/or by a shield winding placed in proximity of the poles for that purpose.Type: GrantFiled: November 21, 1997Date of Patent: August 29, 2000Assignee: Picker International, Inc.Inventor: Ian Robert Young
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Patent number: 6084305Abstract: A semiconductor device structure and method for producing a shaped etch-front during an etching process. In one embodiment, the present invention is comprised of a first layer of material which is disposed above a contact layer. In this embodiment, the first layer of material has a first etch rate. Next, the present invention deposits a second layer of material above at least a portion of the first layer of material. The second layer of material has a second etch rate which is faster than the first etch rate. Additionally, in the present invention, the first layer of material and the second layer of material have a sloped interfacial topography. The sloped interfacial topography of the present invention creates shaped etch-front during the etching of an opening extending through the first layer of material and the second layer of material.Type: GrantFiled: October 6, 1997Date of Patent: July 4, 2000Assignee: VLSI Technology, Inc.Inventor: Ian Robert Harvey
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Patent number: 6080677Abstract: An isolation structure on an integrated circuit is formed using a shallow trench isolation process. A layer of buffer oxide is formed on a substrate. A layer of nitride is formed on the layer of buffer oxide. The layer of nitride and the layer of buffer oxide are patterned to form a trench area. The substrate including the trench area is subjected to a plasma comprising H.sub.2 O vapor, and a gaseous fluorocarbon or a fluorinated hydrocarbon gas to clean impurities on the trench area. The substrate is etched to form a trench within the trench area.Type: GrantFiled: December 30, 1997Date of Patent: June 27, 2000Assignee: VLSI Technology, Inc.Inventors: Calvin Gabriel, Ian Robert Harvey, Linda Leard
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Patent number: 6075583Abstract: In order to the effects of impact on liquid crystal devices a polymer network is introduced into ferroelectric liquid crystal cells. A liquid crystal device comprises two spaced cell walls each bearing electrode structures and treated on at least one facing surface with an alignment layer, a layer of a smectic liquid crystal material enclosed between the cell walls, characterised in that the liquid crystal material contains a small amount of monomer. The liquid crystal material may also contain a photoinitiator. The monomer material may be cured to produce the polymer network; the curing may be carried out in the presence of an electric or magnetic field. Further, the monomer may be cured in an isotropic or liquid crystal phase.Type: GrantFiled: February 27, 1997Date of Patent: June 13, 2000Assignee: The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Northern IrelandInventors: Ian Robert Mason, Damien Gerard McDonnell, John Clifford Jones, Guy Peter Bryan-Brown
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Patent number: 6060629Abstract: Provided are azeotropic and azeotrope-like mixtures of 1,1,1,3,3-pentafluoropropane (HFC-245fa) and hydrogen fluoride. Such are useful as an intermediate in the production of HFC-245fa. The latter is useful as a nontoxic, zero ozone depleting fluorocarbon useful as a solvent, blowing agent, refrigerant, cleaning agent, aerosol propellant, heat transfer medium, dielectric, fire extinguishing composition and power cycle working fluid.Type: GrantFiled: September 10, 1999Date of Patent: May 9, 2000Assignee: AlliedSignal Inc.Inventors: Hang Thanh Pham, Rajiv Ratna Singh, Ian Robert Shankland, Hsueh Sung Tung
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Patent number: 6060376Abstract: A gate region of a transistor is prepared for receiving a deposit of metal. A chemical mechanical polishing process is performed to reduce thickness of an insulation layer above the gate region. At the end of the chemical mechanical polishing process, a portion of the insulating layer remains above the gate region. An etch process is performed to remove the portion of the insulating layer remaining above the gate region. The etch process also removes a portion of polysilicon within the gate region and removes a top portion of spacers on either side of the gate region. A polysilicon selective etch-back is performed to remove an additional portion of the polysilicon within the gate region.Type: GrantFiled: January 12, 1998Date of Patent: May 9, 2000Assignee: VLSI Technology, Inc.Inventors: Calvin Gabriel, Xi-Wei Lin, Tammy Zheng, Linda Leard, Ian Robert Harvey
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Patent number: 6027950Abstract: A method for preventing oxygen microloading of an SOG layer. In one embodiment of the present invention, hydrogen is introduced into an etching environment. An etching step is then performed within the etching environment. During the etching step an SOG layer overlying a TEOS layer is etched until at least a portion of the underlying TEOS layer is exposed. The etching step continues and etches at least some of the exposed portion of the TEOS layer. During etching, the etched TEOS layer releases oxygen. The hydrogen present in the etching environment scavenges the released oxygen. As a result, the released oxygen does not microload the SOG layer. Thus, the etchback rate of the SOG layer is not significantly affected by the released oxygen, thereby allowing for controlled etchback of the SOG layer.Type: GrantFiled: August 5, 1997Date of Patent: February 22, 2000Assignee: VLSI Technology, Inc.Inventors: Ian Robert Harvey, Calvin Todd Gabriel
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Patent number: 6022468Abstract: The method is provided for hardening carbon steel by using electrolysis and a pulsed direct current supply.Type: GrantFiled: November 10, 1997Date of Patent: February 8, 2000Inventors: Suet Fan Luk, Tin Pui Leung, Wah Sing Miu, Ian Robert Pashby
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Patent number: 6013558Abstract: A method of isolating a semiconductor device by shallow trench isolation is provided by: (a) etching a trench into the surface of an integrated circuit; (b) depositing an oxide in the trench so that at least the upper portion of the oxide is silicon-rich; (c) providing a polysilicon gate electrode on the surface of the integrated circuit, with the gate electrode being provided substantially adjacent to the trench with a space between the trench and the gate electrode; (d) providing a spacer oxide to cover the trench oxide, the gate electrode and the space between the trench and the gate electrode, so that the spacer oxide has near-stoichiometric levels of silicon; and (e) etching the spacer oxide from the surface of the integrated circuit under conditions effective to selectively etch the spacer oxide from the upper surface of the integrated circuit and from the upper surface of the gate electrode without etching the trench oxide from the upper portion of the trench.Type: GrantFiled: August 6, 1997Date of Patent: January 11, 2000Assignee: VLSI Technology, Inc.Inventors: Ian Robert Harvey, Calvin Todd Gabriel, Milind Ganesh Weling
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Patent number: 6001796Abstract: Provided are azeotropic and azeotrope-like mixtures of 1,1,1,3,3-pentafluoropropane (HFC-245fa) and hydrogen fluoride. Such are useful as an intermediate in the production of HFC-245fa. The latter is useful as a nontoxic, zero ozone depleting fluorocarbon useful as a solvent, blowing agent, refrigerant, cleaning agent, aerosol propellant, heat transfer medium, dielectric, fire extinguishing composition and power cycle working fluid.Type: GrantFiled: July 3, 1996Date of Patent: December 14, 1999Assignee: AlliedSignal Inc.Inventors: Hang Thanh Pham, Rajiv Ratna Singh, Ian Robert Shankland, Hsueh Sung Tung
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Patent number: 5976987Abstract: A self-aligned contact etch and method for forming a self-aligned contact etch. In one embodiment, the present invention performs an oxide selective etch to form an opening originating at a top surface of a photoresist layer. The opening extends through an underlying oxide layer, and terminates at a top surface of a nitride layer which underlies the oxide layer. Next, the present invention performs a nitride selective etch to extend the opening through the nitride layer to an underlying contact layer. In the present invention, the nitride selective etch causes the photoresist layer to be etched/receded. The nitride selective etch of the present invention further causes the oxide layer to be etched at and near the opening at the interface between the photoresist layer and the oxide layer. As a result, the opening is rounded at the top edge thereof when the layer of photoresist is removed.Type: GrantFiled: October 3, 1997Date of Patent: November 2, 1999Assignee: VLSI Technology, Inc.Inventors: Ian Robert Harvey, Calvin Todd Gabriel, Subhas Bothra
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Patent number: H1838Abstract: Compounds for control of insects and arcarids are disclosed and exemplified which are N-(arylalkyl)-4-[bis(substituted aryl)hydroxymethyl]azabicyclo[3.3. 1 .]nonanes and [3.2.1.]octanes, including N-oxides thereof, N-(substituted-oxy) derivatives thereof, and agriculturally acceptable salts thereof, having the formula: ##STR1## Certain novel intermediates for these pesticidal compounds are also disclosed.Type: GrantFiled: December 16, 1998Date of Patent: February 1, 2000Assignee: FMC CorporationInventors: Thomas G. Cullen, Ian Robert Silverman, Walter H. Yeager