Abstract: A method for fabricating floating body memory cells (FBCs), and the resultant FBCs where gates favoring different conductivity type regions are used is described. In one embodiment, a p type back gate with a thicker insulation is used with a thinner insulated n type front gate. Processing, which compensates for misalignment, which allows the different oxide and gate materials to be fabricated is described.

Abstract: A method for fabricating floating body memory cells (FBCs), and the resultant FBCs where gates favoring different conductivity type regions are used is described. In one embodiment, a p type back gate with a thicker insulation is used with a thinner insulated n type front gate. Processing, which compensates for misalignment, which allows the different oxide and gate materials to be fabricated is described.

Abstract: Systems and methods may couple on-chip optical circuits to external fibers. An SOI waveguide structure may include mirror structures and tapered waveguides to optically couple optical circuits to fibers in a vertically oriented external connector. The mirror structure(s) may be angularly disposed at the ends of the silicon waveguide structure. An oxide layer may cover a buried oxide layer and the silicon waveguide structure. The tapered waveguide(s) may have a narrow end and a wide end. The narrow end of the tapered waveguide(s) may be disposed above the mirror structures. The tapered waveguide(s) may extend through the oxide layer from the narrow end in a direction perpendicular to the silicon waveguide structure. An external connector may fit over the tapered waveguide(s) and uses a fiber array traveling through a connector body to optically couple to the external fiber.

Abstract: A method for fabricating floating body memory cells (FBCs), and the resultant FBCs where gates favoring different conductivity type regions are used is described. In one embodiment, a p type back gate with a thicker insulation is used with a thinner insulated n type front gate. Processing, which compensates for misalignment, which allows the different oxide and gate materials to be fabricated is described.

Abstract: Systems and methods may provide for an integrated miniature sensor that operates in the Terahertz region of the electromagnetic spectrum. The integrated miniature sensor may detect a remote target and operate in a non-contact, non-invasive manner. Numerous signal analysis techniques may be employed such as Doppler radar technology, absorption spectroscopy, and others when the integrated miniature sensor is used in biomedical, physiological and other settings where prolonged recording of bio-signals is needed.

Abstract: A method for fabricating floating body memory cells (FBCs), and the resultant FBCs where gates favoring different conductivity type regions are used is described. In one embodiment, a p type back gate with a thicker insulation is used with a thinner insulated n type front gate. Processing, which compensates for misalignment, which allows the different oxide and gate materials to be fabricated is described.

Abstract: A method for fabricating floating body memory cells (FBCs), and the resultant FBCs where gates favoring different conductivity type regions are used is described. In one embodiment, a p type back gate with a thicker insulation is used with a thinner insulated n type front gate. Processing, which compensates for misalignment, which allows the different oxide and gate materials to be fabricated is described.

Abstract: A method for fabricating floating body memory cells (FBCs), and the resultant FBCs where gates favoring different conductivity type regions are used is described. In one embodiment, a p type back gate with a thicker insulation is used with a thinner insulated n type front gate. Processing, which compensates for misalignment, which alloys the different oxide and gate materials to he fabricated is described.

Abstract: A method for fabricating floating body memory cells (FBCs), and the resultant FBCs where gates favoring different conductivity type regions are used is described. In one embodiment, a p type back gate with a thicker insulation is used with a thinner insulated n type front gate. Processing, which compensates for misalignment, which allows the different oxide and gate materials to he fabricated is described.

Abstract: A method for fabricating floating body memory cells (FBCs), and the resultant FBCs where gates favoring different conductivity type regions are used is described. In one embodiment, a p type back gate with a thicker insulation is used with a thinner insulated n type front gate. Processing, which compensates for misalignment, which alloys the different oxide and gate materials to he fabricated is described.

Abstract: Systems and methods may provide for an integrated miniature sensor that operates in the Terahertz region of the electromagnetic spectrum. The integrated miniature sensor may detect a remote target and operate in a non-contact, non-invasive manner. Numerous signal analysis techniques may be employed such as Doppler radar technology, absorption spectroscopy, and others when the integrated miniature sensor is used in biomedical, physiological and other settings where prolonged recording of bio-signals is needed.

Abstract: A method for fabricating floating body memory cells (FBCs), and the resultant FBCs where gates favoring different conductivity type regions are used is described. In one embodiment, a p type back gate with a thicker insulation is used with a thinner insulated n type front gate. Processing, which compensates for misalignment, which allows the different oxide and gate materials to be fabricated is described.

Abstract: PLC architectures and fabrication techniques for providing electrical and photonic integration of a photonic components with a semiconductor substrate. In the exemplary embodiment, the PLC is to accommodate optical input and/or output (I/O) as well as electrically couple to a microelectronic chip. One or more photonic chip or optical fiber terminal may be coupled to an optical I/O of the PLC. In embodiments the PLC includes a light modulator, photodetector and coupling regions supporting the optical I/O. Spin-on electro-optic polymer (EOP) may be utilized for the modulator while a photodefinable material is employed for a mode expander in the coupling region.

Abstract: A method for fabricating floating body memory cells (FBCs), and the resultant FBCs where gates favoring different conductivity type regions are used is described. In one embodiment, a p type back gate with a thicker insulation is used with a thinner insulated n type front gate. Processing, which compensates for misalignment, which allows the different oxide and gate materials to be fabricated is described.

Abstract: A method for fabricating floating body memory cells (FBCs), and the resultant FBCs where gates favoring different conductivity type regions are used is described. In one embodiment, a p type back gate with a thicker insulation is used with a thinner insulated n type front gate. Processing, which compensates for misalignment, which allows the different oxide and gate materials to be fabricated is described.

Abstract: Systems and methods may couple on-chip optical circuits to external fibers. An SOI waveguide structure may include mirror structures and tapered waveguides to optically couple optical circuits to fibers in a vertically oriented external connector. The mirror structure(s) may be angularly disposed at the ends of the silicon waveguide structure. An oxide layer may cover a buried oxide layer and the silicon waveguide structure. The tapered waveguide(s) may have a narrow end and a wide end. The narrow end of the tapered waveguide(s) may be disposed above the mirror structures. The tapered waveguide(s) may extend through the oxide layer from the narrow end in a direction perpendicular to the silicon waveguide structure. An external connector may fit over the tapered waveguide(s) and uses a fiber array traveling through a connector body to optically couple to the external fiber.

Abstract: Embodiments of the present disclosure provide optical connection techniques and configurations. In one embodiment, an apparatus includes a substrate, a laser device formed on the substrate, the laser device including an active layer configured to emit light, and a mode-expander waveguide disposed on the substrate and butt-coupled with the active layer to receive and route the light to a waveguide formed on another substrate. Other embodiments may be described and/or claimed.

Abstract: An optical coupler includes a double-sided planar substrate having a lens manufactured on one side and a mode expander on the other side. The mode expander is coupled to a mirror that redirects light between the mode expander and the lens. The mirror is lithographically aligned with the lens. The substrate is optically transparent to a target wavelength to be used for optical signaling. The lens can be a lens array, in which case there can be a mirror for each lens in the array. The mode expander can couple an optical signal to a planar lightwave circuit (PLC) or other optical circuit. The lens on the optical coupler can interface with a single-mode optical fiber.

Abstract: A method for fabricating floating body memory cells (FBCs), and the resultant FBCs where gates favoring different conductivity type regions are used is described. In one embodiment, a p type back gate with a thicker insulation is used with a thinner insulated n type front gate. Processing, which compensates for misalignment, which allows the different oxide and gate materials to be fabricated is described.

Abstract: Embodiments of the present disclosure provide optical connection techniques and configurations. In one embodiment, an apparatus includes a substrate, a laser device formed on the substrate, the laser device including an active layer configured to emit light, and a mode-expander waveguide disposed on the substrate and butt-coupled with the active layer to receive and route the light to a waveguide formed on another substrate. Other embodiments may be described and/or claimed.