Abstract: A semiconductor memory device includes a memory bank configured to output stored data in response to a column selection signal, a plurality of data latching units configured to latch the data outputted from the memory bank in response to an input control signal which is generated according to the column selection signal, and output the latched data in response to an output control signal, a time measurement unit configured to measure a time from an activation of the input control signal to an activation of the output control signal and generate a delay control signal, and an activation control unit configured to control an activation time of the column selection signal in response to the delay control signal.

Abstract: A signal output circuit includes a signal transfer unit configured to transfer a signal of a first line to a pull-up line during an activation period of a first clock, transfer the signal of the first line to a pull-down line during a deactivation period of a second clock, transfer a signal of a second line to the pull-up line during a deactivation period of the first clock, and transfer the signal of the second line to the pull-down line during an activation period of the second clock; and an output driving unit configured to pull-up drive an output node in response to a signal of the pull-up line and pull-down drive the output node in response to a signal of the pull-down line, wherein the first clock and the second clock have the activation periods longer than the deactivation periods.

Abstract: The input buffer circuit of a semiconductor apparatus includes a first buffering unit that that is activated by a voltage level difference between a first voltage terminal and a second voltage terminal, and generates a first compare signal and a second compare signal by comparing the voltage levels of reference voltage and an input signal; a control unit that controls the amount of current flowing between the second voltage terminal and a ground terminal by comparing the voltage levels of the reference voltage and the second compare signal; and a second buffering unit that generates an output signal by comparing the voltage levels of the input signal and the first compare signal.

Abstract: A wireless signal transmitting/receiving apparatus for a semiconductor system is disclosed The apparatus includes a serializer/deserializer (SERDES) circuit and a coupling pad. The SERDES circuit outputs a parallel input signal as a serial signal during transmission, and outputs a serial input signal as a parallel signal during reception. The coupling pad generates an inductively coupled wireless signal according to the serial signal outputted from the SERDES circuit, and provides a signal generated by inductive coupling with an external device as the serial input signal of the SERDES circuit.

Abstract: An interface apparatus for a semiconductor integrated circuit and an interfacing method thereof controls the VOX of differential signals to a target level in response to the differential signals being outputted by an output block. The interface apparatus for a semiconductor integrated circuit includes an output block configured to output differential signals output by an internal circuit a detector configured to detect a timing error of the differential signals; and a controller configured to control a timing of the differential signals output by the internal circuit according to a detection result of the detector.

Abstract: An internal voltage generation method includes the steps of: setting first to third sections by using a reference voltage; determining to which section an internal voltage level corresponds, among the first to third sections; and generating the internal voltage by controlling a voltage pumping amount according to a section corresponding to the internal voltage level.

Abstract: The domain crossing circuit of a semiconductor memory apparatus for improving a timing margin includes a sampler that provides a sampling internal signal generated by delaying an internal input signal by a predetermined time in response to a clock and an edge information signal that defines an output timing of the sampling internal signal and an output stage that allows the sampling internal signal to be synchronized with the clock in response to the edge information signal to be output as a final output signal.

Abstract: The input buffer circuit of a semiconductor apparatus includes a first buffering unit that that is activated by a voltage level difference between a first voltage terminal and a second voltage terminal, and generates a first compare signal and a second compare signal by comparing the voltage levels of reference voltage and an input signal; a control unit that controls the amount of current flowing between the second voltage terminal and a ground terminal by comparing the voltage levels of the reference voltage and the second compare signal; and a second buffering unit that generates an output signal by comparing the voltage levels of the input signal and the first compare signal.

Abstract: A semiconductor IC device capable of power-sharing includes a first power line configured to be supplied with a first power, a second power line configured to be supplied with a second power, a switching block configured to connect the first power line with the second power line in response to a first control signal, and a power-sharing control block configured to generate the control signal in accordance with a plurality of operation command signals.

Abstract: A variable delay circuit includes at least a fixed delay unit, a first selection unit, and variable delay unit. The fixed delay unit receives an input signal and a first delay selection signal indicative of a first delay, and outputs a first delayed signal that is substantially the input signal delayed by the first delay. The first selection unit receives the input signal, the first delayed signal, and a second delay selection signal, and outputs either the input signal or the first delayed signal based on the second delay selection signal to the variable delay unit. The variable delay unit also receives a third delay selection signal indicative of a third delay, and outputs a output signal that is substantially the output signal of the selection unit delayed by a third delay. The first delay is 0 or X multiples of M delay units. The third delay is a delay selected from 0 to N delay units.

Abstract: A phase detection circuit includes a phase frequency detector for comparing a first input signal and a second input signal and outputting a first phase comparison signal and a second phase comparison signal, and a sensing circuit for sensing a pulse width difference between the first phase comparison signal and the second phase comparison signal and outputting phase detection signals which have different logic values.

Abstract: An apparatus for transmitting a signal in a semiconductor integrated circuit includes a multilevel transmission control block that outputs a plurality of bits of an input signal in serial or parallel according to whether a multilevel transmission operation is performed or not, and a signal processing block that selectively performs the multilevel transmission operation according to a form of the input signal, which are output in serial or parallel from the multilevel transmission control block.

Abstract: An internal supply voltage generating circuit includes a clock comparator configured to compare a first clock signal having clock information corresponding to a level of a reference voltage with a second clock signal having clock information corresponding to a level of an internal supply voltage, a control signal generator configured to generate a driving control voltage having a voltage level corresponding to an output signal of the clock comparator, and a driver configured to drive a terminal of the internal supply voltage in response to the driving control voltage.

Abstract: A bus system includes a plurality of stubs; a plurality of connectors, each of which is serially coupled between a corresponding one of the stubs and a corresponding one of memory modules; a plurality of first serial loads, each of which is serially coupled to a corresponding one of the connectors; and a plurality of second serial loads, each of which is serially coupled to characteristic impedance of a transmission line of a corresponding one of the stubs, wherein the first and the second serial loads are determined to be impedance matched at each transmission line terminal of the stubs.

Abstract: A data alignment circuit of a semiconductor memory apparatus for receiving and aligning parallel data group includes a first control unit, a second control unit, a first alignment unit and a second alignment unit. The first alignment unit generates a first control signal group in response to an address group, a clock signal, and a latency signal. The second control unit generates a second control signal group in response to the address group, the clock signal, and the latency signal. The first alignment unit aligns the parallel data group as a first serial data group in response to the first control signal group. The second alignment unit aligns the parallel data group as a second serial data group in response to the second control signal group.

Abstract: A semiconductor integrated circuit equipped with an equalizer which has a circuit structure simpler than that of a related equalizer according to an FFE scheme or a DFE scheme and is capable of preventing a noise component from being amplified. The data receiver includes a plurality of receiver units, wherein each receiver unit includes a plurality of level detectors which detect different levels, and an encoder, in which the level detectors receive data according to a clock signal having a predetermined phase difference and perform an amplification operation including an equalization function based on feedback data, thereby outputting an amplification signal, and wherein level detectors of one receiver unit receive an amplification signal, as the feedback data, from level detectors of another receiver unit that receives a first clock signal having a phase more advanced than a phase of a second clock signal received in one receiver unit.

Abstract: A semiconductor memory device is able to generate an output enable signal in response to a read command and CAS latency information. The semiconductor memory device includes a delay locked loop configured to detect a phase difference of an external clock signal and a feedback clock signal, generate a delay control signal corresponding to the detected phase difference, and generate a DLL clock signal by delaying the external clock signal for a time corresponding to the delay control signal, a delay configured to output an active signal as an output enable reset signal in response to the delay control signal and an output enable signal generator configured to be reset in response to the output enable reset signal and generate an output enable signal in response to a read signal and a CAS latency signal by counting the external clock signal and the DLL clock signal.

Abstract: An internal supply voltage generating circuit includes a clock comparator configured to compare a first clock signal having clock information corresponding to a level of a reference voltage with a second clock signal having clock information corresponding to a level of an internal supply voltage, a control signal generator configured to generate a driving control voltage having a voltage level corresponding to an output signal of the clock comparator; and a driver configured to drive a terminal of the internal supply voltage in response to the driving control voltage.

Abstract: A latency control circuit includes a path calculator configured to calculate a delay value of a path that an input signal is to go through inside a chip and output the delay value as path information, a delay value calculator configured to output delay information representing a delay value for delaying the input signal based on a latency value of the input signal and the path information, and a delayer configured to delay the input signal by a delay corresponding to the delay information.

Abstract: A data relay apparatus according to one embodiment described herein can include a phase detection unit that can detect a phase difference between a clock output from a transmitter and a clock output from a receiver, and generate a plurality of phase detection signals, a data relay control unit that can distinguish a difference in clock timing between the clocks of the transmitter and the receiver in response to the plurality of phase detection signals, and output a relay data selection signal and a relay control clock, and a data relay unit that can transmit data output from the receiver to the transmitter in response to the relay data selection signal and the relay control clock.