Abstract: According to the invention, there is provided a plasma processing apparatus which can generate plasma stably and efficiently, and can efficiently treat all of the desired regions to be treated of a base material within a short period of time. Provided is a plasma processing apparatus including an opening portion having an opening width of 1 mm or more; a dielectric member that defines a circular chamber constituting a circular space which communicates the opening; a gas supply pipe that introduces gas into an inside of the circular chamber; a coil that is provided in a vicinity of the circular chamber; a high-frequency power supply that is connected to the coil; and a base material mounting table on which a base material is disposed near the opening.

Abstract: There is provided a roller including: a roller body part; and a rubber part attached to the roller body part, the rubber part including: a rubber body part provided on an outer circumference of the roller body part; and a side extending part extending on a side face of the roller body part from a side face of the rubber body part, wherein the roller body part has a recess portion formed on the side face of the roller body part, and into which the side extending part is fitted.

Abstract: The present invention addresses the problem of providing a novel silicon substrate having a textured surface by dry-etching the surface of a silicon substrate having (111) orientation and thereby forming a texture thereon. The present invention provides a silicon substrate having (111) orientation, said silicon substrate having a textured surface that includes multiple protrusions which each comprise three slant faces and have heights of 100 to 8000 nm. This process for producing a silicon substrate includes: a step of preparing a silicon substrate having (111) orientation; and a step of blowing an etching gas onto the surface of the silicon substrate, said etching gas containing one or more gases selected from the group consisting of ClF3, XeF2, BrF3, BrF5 and NF3.

Abstract: Disclosed is a polycrystalline-type silicon solar cell which can be produced at low cost by forming a polycrystalline silicon film having a PN junction in a simple manner. Specifically, an amorphous silicon film produced by sputtering using a dopant-containing silicon target is polycrystallized with plasma, and a PN junction is formed in the amorphous silicon film, thereby producing a polycrystalline silicon film having a PN junction. The polycrystalline silicon film having a PN junction is used as a silicon substrate for a polycrystalline-type silicon solar cell. Also disclosed is a technique for producing a dopant-containing silicon target from a silicon ingot.

Abstract: A paper discharge device has a paper feed mechanism configured to convey recording paper; an automatic cutter that has a drive unit and configured to cut the recording paper conveyed by the paper feed mechanism into a slip by drive power from the drive unit; and a paper guide unit that has a paper guide surface configured to support the slip cut by the automatic cutter, and a protruding part that is disposed proximate to the guide surface and supports part of the cut end of the slip at a position configured to cause the part of the cut end to contact the recording paper conveyed by the paper feed mechanism.

Abstract: In a plasma torch unit, copper rods forming a coil as a whole are disposed inside copper rod inserting holes formed in a quartz block so that the quartz block is cooled by water flowing inside the copper rod inserting holes and cooling water pipes. A plasma ejection port is formed on the lowermost portion of the torch unit. While a gas is being supplied into a space inside an elongated chamber, high-frequency power is supplied to the copper rods to generate plasma in the space inside the elongated chamber so that the plasma is applied to a substrate.

Abstract: The purpose of the present invention is to obtain a finer texture for a silicon substrate having a textured surface and thereby obtain a thinner silicon substrate for a solar cell. The invention provides a silicon substrate that has a thickness of 50 [mu]m or less and substrate surface orientation (111), and that has a textured surface on which a texture has been formed. Such a silicon substrate is produced by a process comprising a step (A) for preparing a silicon substrate that preferably has a thickness of 50 [mu]m or less and substrate surface orientation (111), and a step (B) for texturing by blowing etching as comprising a fluorine-containing gas onto the surface of the prepared silicon substrate.

Abstract: A non-plasma dry etching apparatus is capable of forming textures uniformly only on one side of a silicon substrate. The non-plasma dry etching apparatus includes a stage on which a silicon substrate is placed is used as a base including plural layers. The plural layers include an electrostatic chuck layer, a heat-resistant glass layer and a space layer from the side on which the silicon substrate is placed.

Abstract: In order to realize a plasma doping method capable of carrying out a stable low-density doping, exhaustion is carried out with a pump while introducing a predetermined gas into a vacuum chamber from a gas supplying apparatus, the pressure of the vacuum chamber is held at a predetermined pressure and a high frequency power is supplied to a coil from a high frequency power source. After the generation of plasma in the vacuum chamber, the pressure of the vacuum chamber is lowered, and the low-density plasma doping is performed to a substrate placed on a substrate electrode. Moreover, the pressure of the vacuum chamber is gradually lowered, and the high frequency power is gradually increased, thereby the low-density plasma doping is carried out to the substrate placed on the substrate electrode.

Abstract: A base material is placed on a base material placement face of a base material placement table. An inductively coupled plasma torch unit is structured with a cylindrical chamber structured with a cylinder made of an insulating material and provided with a rectangular slit-like plasma jet port, and lids closing opposing ends of the cylinder, a gas jet port that supplies gas into the cylindrical chamber, and a solenoid coil that generates a high frequency electromagnetic field in the cylindrical chamber. By a high frequency power supply supplying a high frequency power to the solenoid coil, plasma is generated in the cylindrical chamber, and the plasma is emitted from the plasma jet port to the base material. While relatively shifting the plasma torch unit and the base material placement table, a base material surface can be subjected to heat treatment.

Abstract: In a plasma torch unit, copper rods forming a coil as a whole are disposed inside copper rod inserting holes formed in a quartz block so that the quartz block is cooled by water flowing inside the copper rod inserting holes and cooling water pipes. A plasma ejection port is formed on the lowermost portion of the torch unit. While a gas is being supplied into a space inside an elongated chamber, high-frequency power is supplied to the copper rods to generate plasma in the space inside the elongated chamber so that the plasma is applied to a substrate.

Abstract: In a plasma doping device according to the invention, a vacuum chamber is evacuated with a turbo-molecular pump as an exhaust device via a exhaust port while a predetermined gas is being introduced from a gas supply device in order to maintain the inside of the vacuum chamber to a predetermined pressure with a pressure regulating valve. A high-frequency power of 13.56 MHz is supplied by a high-frequency power source to a coil provided in the vicinity of a dielectric window opposed to a sample electrode to generate inductive-coupling plasma in the vacuum chamber. A high-frequency power source for supplying a high-frequency power to the sample electrode is provided. Uniformity of processing is enhanced by driving a gate shutter and covering a through gate.

Abstract: The present invention addresses the problem of providing a novel silicon substrate having a textured surface by dry-etching the surface of a silicon substrate having (111) orientation and thereby forming a texture thereon. The present invention provides a silicon substrate having (111) orientation, said silicon substrate having a textured surface that includes multiple protrusions which each comprise three slant faces and have heights of 100 to 8000 nm. This process for producing a silicon substrate includes: a step of preparing a silicon substrate having (111) orientation; and a step of blowing an etching gas onto the surface of the silicon substrate, said etching gas containing one or more gases selected from the group consisting of ClF3, XeF2, BrF3, BrF5 and NF3.

Abstract: In a plasma torch unit, copper rods forming a coil as a whole are disposed inside copper rod inserting holes formed in a quartz block so that the quartz block is cooled by water flowing inside the copper rod inserting holes and cooling water pipes. A plasma ejection port is formed on the lowermost portion of the torch unit. While a gas is being supplied into a space inside an elongated chamber, high-frequency power is supplied to the copper rods to generate plasma in the space inside the elongated chamber so that the plasma is applied to a substrate.

Abstract: A plasma doping apparatus which introduces a predetermined mass flow of gas from a gas supply device into a vacuum chamber while discharging the gas through an exhaust port by a turbo-molecular pump, which is an exhaust device in order to maintain the vacuum chamber under a predetermined pressure by a pressure adjusting valve. A high-frequency power source supplies high-frequency power of 13.56 MHz to a coil disposed in the vicinity of a dielectric window opposite a sample electrode in order to generate an inductively coupled plasma in the vacuum chamber. A sum of an area of an opening of a gas flow-off port opposed to a center portion of the sample electrode is configured to be smaller than that of an area of an opening of the gas flow-off port opposed to a peripheral portion of the sample electrode in order to improve the uniformity.

Abstract: A transportation guide mechanism and a recording device having the transportation guide mechanism can smoothly and stably discharge sheet media without impairing the ease of maintenance. The transportation guide mechanism 61 is disposed between the paper exit 4 of a paper feed mechanism 3 that can open and close to the printing unit 2 and a ticket transportation path 12 through which recording paper P discharged from the paper feed mechanism 3 passes, and guides the recording paper P discharged from the paper exit 4 to the ticket transportation path 12. The transportation guide mechanism 61 has a bottom guide panel 63 that renders the guide path 64 through which the recording paper P can pass. The bottom guide panel 63 is supported so that it is pushed by the paper feed mechanism 3 opening and closing to the printing unit 2 and can be displaced to a position outside the path of paper feed mechanism 3 movement.

Abstract: According to the invention, there is provided a plasma processing apparatus which can generate plasma stably and efficiently, and can efficiently treat all of the desired regions to be treated of a base material within a short period of time. Provided is a plasma processing apparatus including an opening portion having an opening width of 1 mm or more; a dielectric member that defines a circular chamber constituting a circular space which communicates the opening; a gas supply pipe that introduces gas into an inside of the circular chamber; a coil that is provided in a vicinity of the circular chamber; a high-frequency power supply that is connected to the coil; and a base material mounting table on which a base material is disposed near the opening.

Abstract: The purpose of the present invention is to obtain a finer texture for a silicon substrate having a textured surface and thereby obtain a thinner silicon substrate for a solar cell. The invention provides a silicon substrate that has a thickness of 50 [mu]m or less and substrate surface orientation (111), and that has a textured surface on which a texture has been formed. Such a silicon substrate is produced by a process comprising a step (A) for preparing a silicon substrate that preferably has a thickness of 50 [mu]m or less and substrate surface orientation (111), and a step (B) for texturing by blowing etching as comprising a fluorine-containing gas onto the surface of the prepared silicon substrate.

Abstract: In a plasma torch unit, a conductor rod having a spiral shape is disposed inside a quartz pipe having a surface coated with boron glass, and a brass block is disposed on the periphery thereof. While a gas is being supplied into a cylindrical chamber, a high-frequency power is supplied to the conductor rod and a plasma is generated in the cylindrical chamber, so that a base material is irradiated with the plasma.

Abstract: Disclosed is a polycrystalline-type silicon solar cell which can be produced at low cost by forming a polycrystalline silicon film having a PN junction in a simple manner. Specifically, an amorphous silicon film produced by sputtering using a dopant-containing silicon target is polycrystallized with plasma, and a PN junction is formed in the amorphous silicon film, thereby producing a polycrystalline silicon film having a PN junction. The polycrystalline silicon film having a PN junction is used as a silicon substrate for a polycrystalline-type silicon solar cell. Also disclosed is a technique for producing a dopant-containing silicon target from a silicon ingot.