Patents by Inventor Ichiro Nakayama

Ichiro Nakayama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080196834
    Abstract: A liquid phase etching method which comprises spraying a chemically reactive liquid, with a specific speed, to a solid article, an aggregate of solid articles or a gelatinous material to be treated; and a liquid etching apparatus having a mechanism for holding a processing object to be treated and a nozzle structure for spraying a chemically reactive liquid to the processing object to be treated which is held by the mechanism. The method and apparatus allow the significant improvement of the etching rate while maintaining the accuracy of etching.
    Type: Application
    Filed: April 25, 2008
    Publication date: August 21, 2008
    Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
    Inventors: Bunji Mizuno, Yuichiro Sasaki, Ichiro Nakayama, Hisataka Kanada
  • Publication number: 20080166861
    Abstract: It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision. In order to distinguish impurities which may be mixed from impurities which should not be mixed, first of all, an impurity introducing mechanism of a core is first distinguished. In order to avoid a mixture of the impurities in very small amounts, a mechanism for delivering a semiconductor substrate to be treated and a mechanism for removing a resin material to be formed on the semiconductor substrate are used exclusively.
    Type: Application
    Filed: March 27, 2008
    Publication date: July 10, 2008
    Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
    Inventors: Bunji Mizuno, Ichiro Nakayama, Yuichiro Sasaki, Tomohiro Okumura, Cheng-Guo Jin, Hiroyuki Ito
  • Publication number: 20080142931
    Abstract: An impurity region having a box-shaped impurity profile is formed. An impurity introducing method includes a step of introducing a desired impurity into a surface of a solid base body, and a step of radiating plasma to a surface of the solid base body after the impurity introducing step thus forming an impurity profile having an approximately box-shape.
    Type: Application
    Filed: March 17, 2005
    Publication date: June 19, 2008
    Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
    Inventors: Yuichiro Sasaki, Ichiro Nakayama, Bunji Mizuno
  • Publication number: 20080146009
    Abstract: To provide an impurity introducing method which can repeatedly carry out such a process that plasma irradiation for realization of amorphous and plasma doping were combined, in such a situation that steps are simple and through-put is high, without destroying an apparatus. At the time of switching over plasmas which are used in plasma irradiation for realization of amorphous and plasma doping, electric discharge is stopped, and an initial condition of a matching point of a high frequency power supply and a peripheral circuit is reset so as to adapt to plasma which is used in each step, or at the time of switching, a load, which is applied to the high frequency power supply etc., is reduced by increasing pressure and decreasing a bias voltage.
    Type: Application
    Filed: February 4, 2005
    Publication date: June 19, 2008
    Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
    Inventors: Yuichiro Sasaki, Tomohiro Okumura, Bunji Mizuno, Cheng-Guo Jin, Ichiro Nakayama, Satoshi Maeshima, Katsumi Okashita
  • Patent number: 7378031
    Abstract: A liquid phase etching method which comprises spraying a chemically reactive liquid, with a specific speed, to a solid article, an aggregate of solid articles or a gelatinous material to be treated; and a liquid etching apparatus having a mechanism for holding a processing object to be treated and a nozzle structure for spraying a chemically reactive liquid to the processing object to be treated which is held by the mechanism. The method and apparatus allow the significant improvement of the etching rate while maintaining the accuracy of etching.
    Type: Grant
    Filed: February 23, 2004
    Date of Patent: May 27, 2008
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Bunji Mizuno, Yuichiro Sasaki, Ichiro Nakayama, Hisataka Kanada
  • Publication number: 20080061292
    Abstract: The invention provides a method of doping impurities that includes a step of doping impurities in a solid base substance by using a plasma doping method, a step of forming a light antireflection layer that functions to reduce light reflection on the surface of the solid base substance, and a step of performing annealing by light radiation. According to the method, it is possible to reduce the reflectance of light radiated during annealing, to efficiently apply energy an impurity doped layer, to improve activation efficiency, to prevent diffusion, and to reduce sheet resistance of the impurity doped layer.
    Type: Application
    Filed: May 19, 2005
    Publication date: March 13, 2008
    Inventors: Cheng-Guo Jin, Yuichiro Sasaki, Bunji Mizuno, Katsumi Okashita, Hiroyuki Ito, Tomohiro Okumura, Satoshi Maeshima, Ichiro Nakayama
  • Patent number: 7294462
    Abstract: There is provided a method for the detection of a base sequence of interest when amount of a sample DNA or RNA is little and plural base sequences of interest to be detected are present in the sample DNA or RNA. The Problem is solved by a method for the detection of an base sequence of interest in a sample DNA or RNA comprising the steps of (1) contacting a sample DNA or RNA to a probe DNAs or RNAs in an aqueous solution to form a hybridization complex; (2) isolating the hybridization complex; (3) dissociating the complex to recover the probe DNAs or RNAs; and (4) identifying the said probe DNAs or RNAs to detect an base sequence of interest in the sample DNA or RNA.
    Type: Grant
    Filed: March 17, 2004
    Date of Patent: November 13, 2007
    Assignee: Japan Software Management Co., Ltd.
    Inventors: Hisanori Nasu, Hiroaki Ono, Akito Mugita, Ichiro Nakayama, Takanori Kobayashi, Tetsuji Masaoka, Satoru Kuhara, Yoshizumi Ishino
  • Publication number: 20070212837
    Abstract: An object is to provide a semiconductor device in which uniform properties are intended and high yields are provided. Process steps are provided in which variations are adjusted in doping and annealing process steps that are subsequent process steps so as to cancel in-plane variations in a substrate caused by dry etching to finally as well provide excellent in-plane consistency in a substrate.
    Type: Application
    Filed: May 12, 2005
    Publication date: September 13, 2007
    Inventors: Bunji Mizuno, Yuichiro Sasaki, Ichiro Nakayama, Hiroyuki Ito, Tomohiro Okumura, Cheng-Guo Jin, Katsumi Okashita, Hisataka Kanada
  • Patent number: 7205250
    Abstract: A Plasma processing method and apparatus exhibit excellent characteristics of reducing the amount of electric charge on a plasma-processed processing-object substrate and of preventing plasma damage and dielectric breakdown. Before the processing-object substrate is plasma-processed, top-and-bottom surfaces of the processing-object substrate are simultaneously subjected to a weak plasma in gas composed mainly of inert gas, which makes it possible to neutralize the charges on the processing-object substrate. The inert gas is any one of Ar, He, N2, H2, and vaporized H2O gas or a mixed gas of these gases.
    Type: Grant
    Filed: March 17, 2004
    Date of Patent: April 17, 2007
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Yoshihiro Yanagi, Ichiro Nakayama
  • Publication number: 20070074813
    Abstract: A method for impurity implantation, in which a substrate is positioned on a table provided within a chamber in which a vacuum will be introduced and also an implantation impurity is supplied. A first high frequency electric power is applied to a plasma generating element to thereby generate a plasma so that the impurity in the chamber is implanted in the substrate. Also, a second high frequency electric power is applied to the table. Detected are a condition of the plasma in the chamber and a voltage or current in the table. A controller controls at least one of the first and second high frequency electric power sources according to the detected condition of the plasma and/or the detected voltage or current, thereby controlling an implantation concentration of the impurity to be implanted.
    Type: Application
    Filed: November 22, 2006
    Publication date: April 5, 2007
    Inventors: Tomohiro Okumura, Ichiro Nakayama, Bunji Mizuno
  • Patent number: 7199064
    Abstract: With evacuation of an interior of a vacuum chamber halted and with gas supply into the vacuum chamber halted, in a state that a mixed gas of helium gas and diborane gas is sealed in the vacuum chamber, a plasma is generated in a vacuum vessel and simultaneously a high-frequency power is supplied to a sample electrode. By the high-frequency power supplied to the sample electrode, boron is introduced to a proximity to a substrate surface.
    Type: Grant
    Filed: September 8, 2004
    Date of Patent: April 3, 2007
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Tomohiro Okumura, Ichiro Nakayama, Satoshi Maeshima, Bunji Mizuno, Yuichiro Sasaki
  • Patent number: 7192854
    Abstract: A method of plasma doping in which dilution of B2H6 is maximized for enhanced safety and stable plasma generation and sustention can be carried out without lowering of doping efficiency and in which the amount of dopant injected can be easily controlled. In particular, a method of plasma doping characterized in that B2H6 gas is used as a material containing doping impurity while He is used as a substance of high dissociation energy and that the concentration of B2H6 in mixed gas is less than 0.05%.
    Type: Grant
    Filed: November 18, 2003
    Date of Patent: March 20, 2007
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Yuichiro Sasaki, Bunji Mizuno, Ichiro Nakayama, Hisataka Kanada, Tomohiro Okumura
  • Publication number: 20070059848
    Abstract: Disclosed here is a method of controlling a dose amount of dopant to be doped into object (1) to be processed in plasma doping. According to the method, the doping control is formed of the following processes: determining the temperature of object (1), the amount of ions having dopant in plasma that collide with object (1), and types of gases in plasma during doping; calculating a dose amount by neutral gas according to the temperature of object (1), and a dose amount by ions from the determined amount of ions containing dopant that collide with object (1); and carrying out doping so that the sum of the dose amount by neutral gas and the dose amount by ions equal to a predetermined dose amount.
    Type: Application
    Filed: September 6, 2004
    Publication date: March 15, 2007
    Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
    Inventors: Yuichiro Sasaki, Ichiro Nakayama, Tomohiro Okumura, Satoshi Maeshima
  • Publication number: 20070037367
    Abstract: A doping device is provided having a vacuum container defining a chamber therein. The container has a portion made of dielectric material and bears an impurity to be doped in a substrate provided in the chamber. Also provided is a plasma source for generating a plasma in the chamber by forming an electric field through the portion of the container, such that ion in the plasma impinges against the portion of the container, feeding the impurity out of the portion of the container into the chamber.
    Type: Application
    Filed: October 25, 2006
    Publication date: February 15, 2007
    Inventors: Tomohiro Okumura, Ichiro Nakayama, Bunji Mizuno
  • Publication number: 20070026649
    Abstract: In order to realize a plasma doping method capable of carrying out a stable low-density doping, exhaustion is carried out with a pump while introducing a predetermined gas into a vacuum chamber from a gas supplying apparatus, the pressure of the vacuum chamber is held at a predetermined pressure and a high frequency power is supplied to a coil from a high frequency power source. After the generation of plasma in the vacuum chamber, the pressure of the vacuum chamber is lowered, and the low-density plasma doping is performed to a substrate placed on a substrate electrode. Moreover, the pressure of the vacuum chamber is gradually lowered, and the high frequency power is gradually increased, thereby the low-density plasma doping is carried out to the substrate placed on the substrate electrode.
    Type: Application
    Filed: September 13, 2006
    Publication date: February 1, 2007
    Applicant: Matsushita Electric Industrial Co., Inc.
    Inventors: Tomohiro Okumura, Ichiro Nakayama, Bunji Mizuno, Yuichiro Sasaki
  • Publication number: 20070020958
    Abstract: With evacuation of interior of a vacuum chamber halted and with gas supply into the vacuum chamber halted, in a state that a mixed gas of helium gas and diborane gas is sealed in the vacuum chamber, a plasma is generated in a vacuum vessel and simultaneously a high-frequency power is supplied to a sample electrode. By the high-frequency power supplied to the sample electrode, boron is introduced to a proximity to the substrate surface.
    Type: Application
    Filed: September 8, 2006
    Publication date: January 25, 2007
    Inventors: Tomohiro Okumura, Ichiro Nakayama, Satoshi Maeshima, Bunji Mizuno, Yuichiro Sasaki
  • Patent number: 7135089
    Abstract: A plasma processing method includes controlling a pressure of an interior of a vacuum chamber to a specified pressure by exhausting the interior of the vacuum chamber while supplying gas into the interior of vacuum chamber. While the pressure of the interior of the vacuum chamber is being controlled, high-frequency power is supplied to one end of a first conductor which is opened at another end, and which is configured as a vortex. Also, grounding one end of a second conductor which is opened at another end and which is configured as a vortex. Finally, electromagnetic waves from the first conductor and the second conductor radiate into the vacuum chamber, generating plasma in the vacuum chamber and processing a substrate placed on the electrode within the vacuum chamber.
    Type: Grant
    Filed: February 28, 2005
    Date of Patent: November 14, 2006
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Tomohiro Okumura, Ichiro Nakayama
  • Publication number: 20060169673
    Abstract: A plasma processing apparatus includes a vacuum vessel, a substrate electrode for supporting a substrate, and an antenna disposed in opposition to the substrate electrode and covered with an insulating antenna cover. A first high-frequency power supplies a high-frequency power of a 30 MHz to 3 GHz frequency to the antenna, and a second high-frequency power supply supplies a high-frequency power of a 100 kHz to 20 MHz. A refrigerant supply unit is provided for supplying a refrigerant flow to the antenna, and an electrically conductive sheet is provided between the antenna and the antenna cover. The electrically conductive sheet has a surface that is parallel to the substrate electrode and is larger than an opposing surface of the antenna.
    Type: Application
    Filed: April 5, 2006
    Publication date: August 3, 2006
    Inventors: Tomohiro Okumura, Yukihiro Maegawa, Hiroyuki Suzuki, Ichiro Nakayama
  • Publication number: 20060088989
    Abstract: A method of introducing an impurity and an apparatus for introducing the impurity forms an impurity layer easily in a shallower profile. Component devices manufactured taking advantage of these method or apparatus are also disclosed. When introducing a material to a solid substance which has an oxidized film or other film sticking at the surface, the present method and apparatus first removes the oxidized film and other film using at least one means selected from among the group consisting of a means for irradiating the surface of solid substance with plasma, a means for irradiating the surface of solid substance with gas and a means for dipping the surface of solid substance in a reductive liquid; and then, attaches or introduces a certain desired particle. The way of attaching, or introducing, a particle is bringing a particle-containing gas to make contact to the surface, which surface has been made to be free of the oxidized film and other film.
    Type: Application
    Filed: September 19, 2003
    Publication date: April 27, 2006
    Inventors: Yuichiro Sasaki, Bunji Mizuno, Ichiro Nakayama
  • Patent number: D561666
    Type: Grant
    Filed: August 22, 2006
    Date of Patent: February 12, 2008
    Inventor: Ichiro Nakayama