Abstract: Embodiments provide a photodiode having two electrodes and an absorption volume for absorbing photons, wherein the absorption volume has a photon entry area, wherein the two electrodes are configured to generate an electric field in an active region between the two electrodes when a reverse voltage is applied, wherein the electric field runs parallel to the photon entry area, wherein, starting from a surface of a semiconductor substrate of the photodiode, the two electrodes essentially extend orthogonally to the surface in a depth direction of the semiconductor substrate, wherein the photodiode has at least one guard structure formed in the semiconductor substrate that is disposed below at least one of the at least two electrodes.

Abstract: According to a further embodiment, a fluid sensor includes a fluid sensor element with a substrate including a recess for receiving a fluid to be examined, wherein the substrate surrounding the recess is formed, at least in parts, as a substrate electrode, an isolation layer arrangement between a floating gate electrode of a transistor and the substrate electrode and a sensor layer in the recess and adjacent to the floating gate electrode, an additional electrode at an opening area of the recess, wherein the additional electrode is arranged electrically isolated from the sensor layer, the substrate electrode and the floating gate electrode and is connected or connectable to a control potential and a processor configured to provide the control potential at the additional electrode such that an electric field between the additional electrode and the sensor layer is at least reduced or compensated during operation of the fluid sensor.

Abstract: According to a further embodiment, a fluid sensor includes a fluid sensor element with a substrate including a recess for receiving a fluid to be examined, wherein the substrate surrounding the recess is formed, at least in parts, as a substrate electrode, an isolation layer arrangement between a floating gate electrode of a transistor and the substrate electrode and a sensor layer in the recess and adjacent to the floating gate electrode, an additional electrode at an opening area of the recess, wherein the additional electrode is arranged electrically isolated from the sensor layer, the substrate electrode and the floating gate electrode and is connected or connectable to a control potential and a processor configured to provide the control potential at the additional electrode such that an electric field between the additional electrode and the sensor layer is at least reduced or compensated during operation of the fluid sensor.

Abstract: A method for detecting resistant germs in a sample includes contacting the sample by a sample carrier which has an agent for killing different germs. In addition, the method includes introducing the sample carrier into an analyzer and detecting light emissions from the sample carrier by the analyzer. An indication is output by the analyzer indicating that the sample contains at least one germ resistant to the agent for killing different germs, if the light emission exceeds a threshold value, or indicating that the sample does not contain germs resistant to the agent for killing different germs, if the light emission does not exceed the threshold value.

Abstract: Embodiments relate to a fluid sensor and a method for examining a fluid. A fluid sensor includes a substrate which comprises a recess for receiving a fluid to be examined, wherein the fluid sensor is implemented to detect electrical changes in the recess caused by the fluid to be examined.

Abstract: The disclosure pertains to a microstructure for adsorbing/desorbing at least one gas component of a gas supplied to the microstructure. The microstructure includes a semiconductor substrate having a bottom and a top. The microstructure also includes a plurality of micro-channels, extending from the bottom to the top of the semiconductor substrate. A top surface of micro-channel is configured to adsorb and/or desorb the at least one gas component when the gas is passed through the micro-channels.

Abstract: A method for detecting resistant germs in a sample includes contacting the sample by a sample carrier which has an agent for killing different germs. In addition, the method includes introducing the sample carrier into an analyzer and detecting light emissions from the sample carrier by the analyzer. An indication is output by the analyzer indicating that the sample contains at least one germ resistant to the agent for killing different germs, if the light emission exceeds a threshold value, or indicating that the sample does not contain germs resistant to the agent for killing different germs, if the light emission does not exceed the threshold value.

Abstract: A transistor structure includes a first terminal region, a second terminal region and a channel region therebetween in a semiconductor substrate. Additionally, the transistor structure includes a control electrode associated with the channel region, the control electrode having a control electrode portion which is elastically deflectable under the action of a force and spaced apart from the channel region. The distance between the control electrode portion and the channel region is changed based on the action of force.

Abstract: Embodiments relate to a fluid sensor and a method for examining a fluid. A fluid sensor includes a substrate which comprises a recess for receiving a fluid to be examined, wherein the fluid sensor is implemented to detect electrical changes in the recess caused by the fluid to be examined.

Abstract: A method and apparatus for performing ALD deposition of hafnium oxide on a substrate is provided. The apparatus includes a process chamber, a precursor delivery subsystem, an oxidizer delivery subsystem, a purge gas subsystem, a solvent flush subsystem, and optional solvent recovery and purification subsystems. The method includes pulsing precursor compounds into the process chamber in sequence. While one precursor is pulsed, purge gas is provided through the other precursor line. After pulsing, precursor lines are purged, and the chamber is evacuated and purged. A solvent flush step is employed to remove precursor deposits that build up in piping over time.

Abstract: The invention concerns a sensor with silicon-containing components from whose sensitive detection element electrical signals relevant to a present analyte can be read out by means of a silicon semiconductor system. The invention is characterized in that the silicon-containing components are covered with a layer made of hydrophobic material in order to prevent unwanted signals caused by moisture.

Abstract: A method and apparatus for performing ALD deposition of hafnium oxide on a substrate is provided. The apparatus includes a process chamber, a precursor delivery subsystem, an oxidizer delivery subsystem, a purge gas subsystem, a solvent flush subsystem, and optional solvent recovery and purification subsystems. The method includes pulsing precursor compounds into the process chamber in sequence. While one precursor is pulsed, purge gas is provided through the other precursor line. After pulsing, precursor lines are purged, and the chamber is evacuated and purged. A solvent flush step is employed to remove precursor deposits that build up in piping over time.

Abstract: The invention concerns a sensor with silicon-containing components from whose sensitive detection element electrical signals relevant to a present analyte can be read out by means of a silicon semiconductor system. The invention is characterized in that the silicon-containing components are covered with a layer made of hydrophobic material in order to prevent unwanted signals caused by moisture.

Abstract: A gas-sensitive field-effect transistor (GasFET) for the detection or measurement of an amount of hydrogen sulfide present in ambient air includes a raised gate electrode and a transistor structure. The raised gate electrode may be formed from or coated with a gas-sensitive material such as tin oxide, or silver, silver oxide or mixtures thereof. An insulator layer may be disposed on top of the transistor structure. An air gap is formed between the gas-sensitive layer of the raised gate electrode and the insulator layer on top of the transistor structure.

Abstract: A gas-sensitive field effect transistor reads signals generated by the principle of measuring work functions, for the detection of chlorine (Cl) with a gas-sensitive layer of gold.

Abstract: A process for forming and/or modifying dielectric films on semiconductor substrates is disclosed. According to the present invention, a semiconductor wafer is exposed to a process gas containing a reactive component. The temperature to which the semiconductor wafer is heated and the partial pressure of the reactive component are selected so that, sometime during the process, diffusion of the reactive components occurs through the dielectric film to the film/semiconductor substrate interface. Further, diffusion also occurs of semiconductor atoms through the dielectric film to an exterior surface of the film. The process of the present invention has been found well suited to forming and/or modifying very thin dielectric films, such as films having a thickness of less than 8 nm.

Abstract: A method for producing an electrically conductive structure on a non-planar surface includes depositing a photosensitive resist coating onto the non-planar surface, exposing the photosensitive resist coating, removing a portion of the photosensitive resist coating, and depositing an electrically-conductive material onto portions of the non-planar surface that is substantially free of the photosensitive resist coating.

Abstract: A field-effect-controllable semiconductor component has at least one source zone and at least one drain zone of a first conductivity type, and at least one body zone of a second conductivity type. The body zone is provided between the source zone and the drain zone. In each case at least a first and a second region of the second conductivity type are provided in a channel zone. The first region has a first doping concentration and the second region has a second doping concentration, which is lower than the first doping concentration. The combination of the two regions produces a semiconductor component threshold voltage greater than zero and the on resistance is lower than that merely due to a channel zone doped with the first or second doping concentration.

Abstract: The invention relates to methods for producing an electrically-conductive structure on a non-planar surface (1) with the following steps:

Abstract: A process for forming and/or modifying dielectric films on semiconductor substrates is disclosed. According to the present invention, a semiconductor wafer is exposed to a process gas containing a reactive component. The temperature to which the semiconductor wafer is heated and the partial pressure of the reactive component are selected so that, sometime during the process, diffusion of the reactive components occurs through the dielectric film to the film/semiconductor substrate interface. Further, diffusion also occurs of semiconductor atoms through the dielectric film to an exterior surface of the film. The process of the present invention has been found well suited to forming and/or modifying very thin dielectric films, such as films having a thickness of less than 8 nm.