Abstract: A device includes a substrate and a package input terminal. The device includes a driver amplifier mounted to the substrate and configured to receive a radio frequency input signal. A first amplifier is mounted to the substrate. The first amplifier includes a first amplifier input terminal. A second amplifier is mounted to the substrate. The second amplifier includes a second amplifier input terminal. An inter-stage network is connected between the driver amplifier and the first amplifier and between the driver amplifier and the second amplifier. The inter-stage network includes a first capacitor connected between the driver amplifier and the first amplifier input terminal, and an inductor having a first terminal and a second terminal. The first terminal of the inductor is connected to the first capacitor. The inter-stage network includes a second capacitor connected between the second terminal of the inductor and the second amplifier input terminal.

Abstract: The embodiments described herein provide wideband highly asymmetrical power efficient amplifier device that include a compact input power distribution network with input termination circuit. The input termination circuit is configured to provide control of the power distribution at the amplifier input. In one embodiment, the input termination circuit is configured to generate and reflect a frequency dependent portion of an input signal back toward the amplifier device inputs. This input reflection controls the input power distribution and shape of time domain input signal in a way that can affect amplifier device efficiency and linearity.

Abstract: A coupling element for providing external coupling to a semiconductor die within an integrated circuit package. The coupling element comprises a flexible laminate structure comprising a flexible, electrically insulating substrate layer, a first conductive layer bonded to a first surface of the substrate layer, and a second conductive layer bonded to a second surface of the substrate layer. The coupling element is arranged to be coupled to the semiconductor die such that the first and second conductive layers are electrically coupled to electrical contacts of the semiconductor die. The coupling element is further arranged to extend through the integrated circuit package when electrically coupled to the semiconductor die, and for the first and second conductive layers to be further electrically coupled to at least one external component.

Abstract: Embodiments of a Doherty amplifier device are provided, including a first amplifier stage having a first gain; a second amplifier stage having a second gain that is less than the first gain; and an input power splitter coupled to inputs of the first and second amplifier stages, wherein the input power splitter includes either an inductive element, a capacitive element, or both coupled between the inputs of the first and second amplifier stages, and a resistive element coupled to the input of the second amplifier stage, the input power splitter respectively delivers first and second power levels to inputs of the first and second amplifier stages, and the resistive element is configured to tune gain linearity of the Doherty amplifier device by increasing the second power level to be greater than the first power level, based on a ratio of the second gain to the first gain.

Abstract: A device includes a substrate and a package input terminal. The device includes a driver amplifier mounted to the substrate and configured to receive a radio frequency input signal. A first amplifier is mounted to the substrate. The first amplifier includes a first amplifier input terminal. A second amplifier is mounted to the substrate. The second amplifier includes a second amplifier input terminal. An inter-stage network is connected between the driver amplifier and the first amplifier and between the driver amplifier and the second amplifier. The inter-stage network includes a first capacitor connected between the driver amplifier and the first amplifier input terminal, and an inductor having a first terminal and a second terminal. The first terminal of the inductor is connected to the first capacitor. The inter-stage network includes a second capacitor connected between the second terminal of the inductor and the second amplifier input terminal.

Abstract: The embodiments described herein provide wideband highly asymmetrical power efficient amplifier device that include a compact input power distribution network with input termination circuit. The input termination circuit is configured to provide control of the power distribution at the amplifier input. In one embodiment, the input termination circuit is configured to generate and reflect a frequency dependent portion of an input signal back toward the amplifier device inputs. This input reflection controls the input power distribution and shape of time domain input signal in a way that can affect amplifier device efficiency and linearity.

Abstract: Embodiments of a Doherty amplifier device are provided, including a first amplifier stage having a first gain; a second amplifier stage having a second gain that is less than the first gain; and an input power splitter coupled to inputs of the first and second amplifier stages, wherein the input power splitter includes either an inductive element, a capacitive element, or both coupled between the inputs of the first and second amplifier stages, and a resistive element coupled to the input of the second amplifier stage, the input power splitter respectively delivers first and second power levels to inputs of the first and second amplifier stages, and the resistive element is configured to tune gain linearity of the Doherty amplifier device by increasing the second power level to be greater than the first power level, based on a ratio of the second gain to the first gain.

Abstract: A two-way Doherty amplifier for amplifying a modulated or non-modulated carrier signal, said carrier signal having a carrier frequency; wherein the Doherty amplifier comprises a first amplifier having a first amplifier output node, a second amplifier having a second amplifier output node, a combining node connected or connectable to a load, a first amplifier output line connecting the first amplifier output node to the combining node, and a second amplifier output line connecting the second amplifier output node to the combining node, and wherein the first amplifier output line has an electrical length of substantially one quarter wavelength of the carrier signal and the second amplifier output line has an electrical length of substantially one half wavelength of the carrier signal.

Abstract: A coupling element for providing external coupling to a semiconductor die within an integrated circuit package. The coupling element comprises a flexible laminate structure comprising a flexible, electrically insulating substrate layer, a first conductive layer bonded to a first surface of the substrate layer, and a second conductive layer bonded to a second surface of the substrate layer. The coupling element is arranged to be coupled to the semiconductor die such that the first and second conductive layers are electrically coupled to electrical contacts of the semiconductor die. The coupling element is further arranged to extend through the integrated circuit package when electrically coupled to the semiconductor die, and for the first and second conductive layers to be further electrically coupled to at least one external component.

Abstract: An amplification stage and a wideband power amplifier are provided. The amplification stage includes a stage input terminal, a stage output terminal, an amplifier, an input compensation network, and in output compensation network. At the stage input terminal is received a signal which is provided via the input compensation network to the amplifier. The input compensation network filters the signal to allow a wideband operation of the amplification stage around an operational frequency. The amplified signal provided by the amplifier is provided via the output compensation network to the stage output terminal. The output compensation network configured to allow a wideband operation of the amplification stage around the operational frequency with a minimal phase shift and distortion of amplitude and phase frequency response. The wideband power amplifier includes a plurality of amplification stage combined with transmission lines or their lumped element equivalents in a specific circuit topology.

Abstract: An RF power device that includes a transistor with a compact impedance transformation circuit, where the transformation circuit includes a lumped element CLC analog transmission line and an associated embedded directional bilateral RF power sensor that is inductively coupled to the transmission line to provide detection of direct and reflected power independently with high directivity.

Abstract: An electronic circuit has a multi-way Doherty amplifier. The multi-way Doherty amplifier comprises a two-way Doherty amplifier with a main stage and a first peak stage that are integrated in a semiconductor device; and at least one further peak stage implemented with a discrete power transistor.

Abstract: A two-way Doherty amplifier for amplifying a modulated or non-modulated carrier signal, said carrier signal having a carrier frequency; wherein the Doherty amplifier comprises a first amplifier having a first amplifier output node, a second amplifier having a second amplifier output node, a combining node connected or connectable to a load, a first amplifier output line connecting the first amplifier output node to the combining node, and a second amplifier output line connecting the second amplifier output node to the combining node, and wherein the first amplifier output line has an electrical length of substantially one quarter wavelength of the carrier signal and the second amplifier output line has an electrical length of substantially one half wavelength of the carrier signal.

Abstract: An amplification stage and a wideband power amplifier are provided. The amplification stage includes a stage input terminal, a stage output terminal, an amplifier, an input compensation network, and in output compensation network. At the stage input terminal is received a signal which is provided via the input compensation network to the amplifier. The input compensation network filters the signal to allow a wideband operation of the amplification stage around an operational frequency. The amplified signal provided by the amplifier is provided via the output compensation network to the stage output terminal. The output compensation network configured to allow a wideband operation of the amplification stage around the operational frequency with a minimal phase shift and distortion of amplitude and phase frequency response. The wideband power amplifier includes a plurality of amplification stage combined with transmission lines or their lumped element equivalents in a specific circuit topology.

Abstract: The present invention relates to an amplifier comprising a plurality of Doherty amplifier cells each Doherty amplifier cell comprising an input and an output respectively connected to an input and an output of the amplifier, a main amplifier stage, a peak amplifier stage and a signal combining circuit configured to combine signals from outputs of the main and peak amplifiers and provide a combined signal to the output of the Doherty amplifier cell. Each cell comprises a controllable splitter having an input (connected to the input of the Doherty amplifier cell. The controllable splitter is configured to receive a splitter control signal and modify an amplitude and phase of a signal at the input of the Doherty amplifier cell in response to the splitter control signal.

Abstract: The invention relates to high power radiofrequency amplifiers, in particular to amplifiers having output impedance matching networks, exemplary embodiments of which include a radiofrequency amplifier having an active device mounted on a substrate within a device package, the amplifier having an output impedance matching network comprising a high pass network provided at least partly on the active device and a low pass network having a first inductive shunt connection between an output of the active device and a first output lead and a second inductive shunt connection between the output of the active device and a second output lead, wherein part of the second output lead forms an inductance contributing to the inductance of the low pass network.

Abstract: An integrated radiofrequency amplifier with an operational frequency includes first and second Doherty amplifiers each having a main device, and a peak device connected at respective inputs and outputs by respective phase shift elements configured to provide a 90 degree phase shift at the operational frequency. An input of the amplifier is connected to the input of the main device of the first Doherty amplifier, an output of the amplifier is connected to the outputs of the peak devices of the first and second Doherty amplifiers and the input of the peak device of the first Doherty amplifier is connected to the input of the main device of the second Doherty amplifier by a phase shift element providing a 90 degree phase shift at the operational frequency.

Abstract: A combination amplifier, in particular a Doherty amplifier allowing dynamic biasing, is provided, the combination amplifier comprising a first amplifier (3,3a,3b) having a first input terminal (11,11a,11b) and a first output terminal (25,25a,25b); a second amplifier (5,5a,5b) having a second input terminal (27,27a,27b) and a second output terminal (29,29a,29b); a first impedance inverter (Li, 43b) connected between the first input terminal and the second input terminal; and an envelope detector (33,33a,33b) comprising a detector output terminal and a detector input terminal which is connected to the first output terminal.

Abstract: The present invention relates to an amplifier comprising a plurality of Doherty amplifier cells each Doherty amplifier cell comprising an input and an output respectively connected to an input and an output of the amplifier, a main amplifier stage, a peak amplifier stage and a signal combining circuit configured to combine signals from outputs of the main and peak amplifiers and provide a combined signal to the output of the Doherty amplifier cell. Each cell comprises a controllable splitter having an input connected to the input of the Doherty amplifier cell. The controllable splitter is configured to receive a splitter control signal and modify an amplitude and phase of a signal at the input of the Doherty amplifier cell in response to the splitter control signal.

Abstract: A bond wire circuit includes at least three bond wires arranged to split an input signal into two output signals. In connection with various example embodiments, bond wires are arranged in a generally parallel manner to mitigate magnetic coupling and related issues for splitting an input signal and providing each of split signals to an amplifier. The bond wires are connected by capacitive circuits that facilitate the splitting, and in some applications, additional capacitive (to ground/reference) and load circuits to further facilitate the splitting of the input signals for specific amplifier circuit implementations, and applications to various loads. In some implementations, the input signals are split in equal or arbitrary portions with frequency independent phase differences in a wide frequency band, with isolation between ports of the circuit.