Abstract: A method is provided which includes dispensing and removing different deposition solutions during an electroless deposition process to form different sub-films of a composite layer. Another method includes forming a film by an electroless deposition process and subsequently annealing the microelectronic topography to induce diffusion of an element within the film. Yet another method includes reiterating different mechanisms of deposition growth, namely interfacial electroless reduction and chemical adsorption, from a single deposition solution to form different sub-films of a composite layer. A microelectronic topography resulting from one or more of the methods includes a film formed in contact with a structure having a bulk concentration of a first element. The film has periodic successions of regions each comprising a region with a concentration of a second element greater than a set amount and a region with a concentration of the second element less than the set amount.

Abstract: A method is provided which includes dispensing and removing different deposition solutions during an electroless deposition process to form different sub-films of a composite layer. Another method includes forming a film by an electroless deposition process and subsequently annealing the microelectronic topography to induce diffusion of an element within the film. Yet another method includes reiterating different mechanisms of deposition growth, namely interfacial electroless reduction and chemical adsorption, from a single deposition solution to form different sub-films of a composite layer. A microelectronic topography resulting from one or more of the methods includes a film formed in contact with a structure having a bulk concentration of a first element. The film has periodic successions of regions each comprising a region with a concentration of a second element greater than a set amount and a region with a concentration of the second element less than the set amount.

Abstract: An apparatus is provided having a closable chamber that can be sealed and is capable of withstanding an increased pressure and high temperature. The chamber has several inlet ports for the supply of various process liquids, such as deposition solutions, DI water for rinsing, etc., and a port for the supply of a gas under pressure. The apparatus also includes a solution heater and a control system for controlling temperature and pressure in the chamber. Uniform deposition is achieved by carrying out the deposition process under pressure and under temperature slightly below the boiling point of the solution. The solution can be supplied from above via a shower head formed in the cover, or through the bottom of the chamber. Rinsing or other auxiliary solutions are supplied via a radially moveable chemical dispensing arm that can be arranged above the substrate parallel thereto.

Abstract: A method is provided which includes forming a metal layer and converting at least a portion of the metal layer to a hydrated metal oxide layer. Another method is provided which includes selectively depositing a dielectric layer upon another dielectric layer and selectively depositing a metal layer adjacent to the dielectric layer. Consequently, a microelectronic topography is formed which includes a metal feature and an adjacent dielectric portion comprising lower and upper layers of hydrophilic and hydrophobic material, respectively. A topography including a metal feature having a single layer with at least four elements lining a lower surface and sidewalls of the metal feature is also provided herein. The fluid/s used to form such a single layer may be analyzed by test equipment configured to measure the concentration of all four elements. In some cases, the composition of the fluid/s may be adjusted based upon the analysis.

Abstract: A method is provided which includes forming a metal layer and converting at least a portion of the metal layer to a hydrated metal oxide layer. Another method is provided which includes selectively depositing a dielectric layer upon another dielectric layer and selectively depositing a metal layer adjacent to the dielectric layer. Consequently, a microelectronic topography is formed which includes a metal feature and an adjacent dielectric portion comprising lower and upper layers of hydrophilic and hydrophobic material, respectively. A topography including a metal feature having a single layer with at least four elements lining a lower surface and sidewalls of the metal feature is also provided herein. The fluid/s used to form such a single layer may be analyzed by test equipment configured to measure the concentration of all four elements. In some cases, the composition of the fluid/s may be adjusted based upon the analysis.

Abstract: A method is provided which includes dispensing a deposition solution at a plurality of locations extending different distances from a center of a microelectronic topography each at different moments in time during an electroless plating process. An electroless plating apparatus used for the method includes a substrate holder, a moveable dispense arm, and a storage medium comprising program instructions executable by a processor for positioning the moveable dispense arm. Another method and accompanying electroless deposition chamber are configured to introduce a gas into an electroless plating chamber above a plate which is suspended above a microelectronic topography and distribute the gas to regions extending above one or more discrete portions of the microelectronic topography.

Abstract: A method is provided which includes forming a metal layer and converting at least a portion of the metal layer to a hydrated metal oxide layer. Another method is provided which includes selectively depositing a dielectric layer upon another dielectric layer and selectively depositing a metal layer adjacent to the dielectric layer. Consequently, a microelectronic topography is formed which includes a metal feature and an adjacent dielectric portion comprising lower and upper layers of hydrophilic and hydrophobic material, respectively. A topography including a metal feature having a single layer with at least four elements lining a lower surface and sidewalls of the metal feature is also provided herein. The fluid/s used to form such a single layer may be analyzed by test equipment configured to measure the concentration of all four elements. In some cases, the composition of the fluid/s may be adjusted based upon the analysis.

Abstract: A microelectronic topography includes a dielectric layer (DL) with a surface higher than an adjacent bulk metal feature (BMF) and further includes a barrier layer (BL) upon the BMF and extending higher than the DL. Another microelectronic topography includes a BL with a metal-oxide layer having a metal element concentration which is disproportionate relative to concentrations of the element within metal alloy layers on either side of the metal-oxide layer. A method includes forming a BL upon a BMF such that portions of a first DL adjacent to the BMF are exposed, selectively depositing a second DL upon the BL, cleaning the topography thereafter, and blanket depositing a third DL upon the cleaned topography. Another method includes polishing a microelectronic topography such that a metallization layer is coplanar with a DL and further includes spraying a deionized water based fluid upon the polished topography to remove debris from the DL.

Abstract: A method is provided which includes forming a metal layer and converting at least a portion of the metal layer to a hydrated metal oxide layer. Another method is provided which includes selectively depositing a dielectric layer upon another dielectric layer and selectively depositing a metal layer adjacent to the dielectric layer. Consequently, a microelectronic topography is formed which includes a metal feature and an adjacent dielectric portion comprising lower and upper layers of hydrophilic and hydrophobic material, respectively. A topography including a metal feature having a single layer with at least four elements lining a lower surface and sidewalls of the metal feature is also provided herein. The fluid/s used to form such a single layer may be analyzed by test equipment configured to measure the concentration of all four elements. In some cases, the composition of the fluid/s may be adjusted based upon the analysis.

Abstract: A method is provided which includes dispensing and removing different deposition solutions during an electroless deposition process to form different sub-films of a composite layer. Another method includes forming a film by an electroless deposition process and subsequently annealing the microelectronic topography to induce diffusion of an element within the film. Yet another method includes reiterating different mechanisms of deposition growth, namely interfacial electroless reduction and chemical adsorption, from a single deposition solution to form different sub-films of a composite layer. A microelectronic topography resulting from one or more of the methods includes a film formed in contact with a structure having a bulk concentration of a first element. The film has periodic successions of regions each comprising a region with a concentration of a second element greater than a set amount and a region with a concentration of the second element less than the set amount.

Abstract: An apparatus is provided having a closable chamber that can be sealed and is capable of withstanding an increased pressure and high temperature. The chamber has several inlet ports for the supply of various process liquids, such as deposition solutions, water for rinsing, etc., and a port for the supply of a gas under pressure. The apparatus also includes a solution heater and a control system for controlling temperature and pressure in the chamber. Uniform deposition is achieved by carrying out the deposition process under pressure and under temperature slightly below the boiling point of the solution. The solution can be supplied from above via a shower head formed in the cover, or through the bottom of the chamber. Rinsing or other auxiliary solutions are supplied via a radially moveable chemical dispensing arm that can be arranged above the substrate parallel thereto.

Abstract: An apparatus for processing microelectronic topographies, a method of use of such an apparatus, and a method for passivating hardware of microelectronic processing chambers are provided. The apparatus includes a substrate holder configured to support a microelectronic topography and a rotatable case with sidewalls arranged on opposing sides of the substrate holder. The method of using such an apparatus includes positioning a microelectronic topography upon a substrate holder of a processing chamber, exposing the microelectronic topography to a fluid within the processing chamber, and rotating a case of the processing chamber. The rotation is sufficient to affect movement of the fluid relative to the surface of the microelectronic topography. A method for passivating hardware of a microelectronic processing chamber includes exposing the hardware to an organic compound and subsequently exposing the hardware to an agent configured to form polar bonds with the organic compound.

Abstract: A method for electroless deposition from a deposition solution in a working chamber, where the process can include heating the deposition solution to its boiling point and subsequently reducing the temperature of the deposition solution to a working temperature range that is between approximately 1% and approximately 25% below the boiling point of said solution under a predetermined pressure; and the process also can include heating the deposition solution while filling an enclosed area of the chamber such that the deposition solution reaches its boiling point immediately after the enclosed area is filled.

Abstract: Methods and systems are provided which are adapted to process a microelectronic topography, particularly in association with an electroless deposition process. In general, the methods may include loading the topography into a chamber, closing the chamber to form an enclosed area, and supplying fluids to the enclosed area. In some embodiments, the fluids may fill the enclosed area. In addition or alternatively, a second enclosed area may be formed about the topography. As such, the provided system may be adapted to form different enclosed areas about a substrate holder. In some cases, the method may include agitating a solution to minimize the accumulation of bubbles upon a wafer during an electroless deposition process. As such, the system provided herein may include a means for agitating a solution in some embodiments. Such a means for agitation may be distinct from the inlet/s used to supply the solution to the chamber.

Abstract: Methods and systems are provided which are adapted to process a microelectronic topography, particularly in association with an electroless deposition process. In general, the methods may include loading the topography into a chamber, closing the chamber to form an enclosed area, and supplying fluids to the enclosed area. In some embodiments, the fluids may fill the enclosed area. In addition or alternatively, a second enclosed area may be formed about the topography. As such, the provided system may be adapted to form different enclosed areas about a substrate holder. In some cases, the method may include agitating a solution to minimize the accumulation of bubbles upon a wafer during an electroless deposition process. As such, the system provided herein may include a means for agitating a solution in some embodiments. Such a means for agitation may be distinct from the inlet/s used to supply the solution to the chamber.

Abstract: A microelectronic topography includes a dielectric layer (DL) with a surface higher than an adjacent bulk metal feature (BMF) and further includes a barrier layer (BL) upon the BMF and extending higher than the DL. Another microelectronic topography includes a BL with a metal-oxide layer having a metal element concentration which is disproportionate relative to concentrations of the element within metal alloy layers on either side of the metal-oxide layer. A method includes forming a BL upon a BMF such that portions of a first DL adjacent to the BMF are exposed, selectively depositing a second DL upon the BL, cleaning the topography thereafter, and blanket depositing a third DL upon the cleaned topography. Another method includes polishing a microelectronic topography such that a metallization layer is coplanar with a DL and further includes spraying a deionized water based fluid upon the polished topography to remove debris from the DL.

Abstract: An apparatus for processing microelectronic topographies, a method of use of such an apparatus, and a method for passivating hardware of microelectronic processing chambers are provided. The apparatus includes a substrate holder configured to support a microelectronic topography and a rotatable case with sidewalls arranged on opposing sides of the substrate holder. The method of using such an apparatus includes positioning a microelectronic topography upon a substrate holder of a processing chamber, exposing the microelectronic topography to a fluid within the processing chamber, and rotating a case of the processing chamber. The rotation is sufficient to affect movement of the fluid relative to the surface of the microelectronic topography. A method for passivating hardware of a microelectronic processing chamber includes exposing the hardware to an organic compound and subsequently exposing the hardware to an agent configured to form polar bonds with the organic compound.

Abstract: A microelectronic topography includes a dielectric layer (DL) with a surface higher than an adjacent bulk metal feature (BMF) and further includes a barrier layer (BL) upon the BMF and extending higher than the DL. Another microelectronic topography includes a BL with a metal-oxide layer having a metal element concentration which is disproportionate relative to concentrations of the element within metal alloy layers on either side of the metal-oxide layer. A method includes forming a BL upon a BMF such that portions of a first DL adjacent to the BMF are exposed, selectively depositing a second DL upon the BL, cleaning the topography thereafter, and blanket depositing a third DL upon the cleaned topography. Another method includes polishing a microelectronic topography such that a metallization layer is coplanar with a DL and further includes spraying a deionized water based fluid upon the polished topography to remove debris from the DL.

Abstract: A method is provided which includes forming a metal layer and converting at least a portion of the metal layer to a hydrated metal oxide layer. Another method is provided which includes selectively depositing a dielectric layer upon another dielectric layer and selectively depositing a metal layer adjacent to the dielectric layer. Consequently, a microelectronic topography is formed which includes a metal feature and an adjacent dielectric portion comprising lower and upper layers of hydrophilic and hydrophobic material, respectively. A topography including a metal feature having a single layer with at least four elements lining a lower surface and sidewalls of the metal feature is also provided herein. The fluid/s used to form such a single layer may be analyzed by test equipment configured to measure the concentration of all four elements. In some cases, the composition of the fluid/s may be adjusted based upon the analysis.

Abstract: An apparatus for processing microelectronic topographies, a method of use of such an apparatus, and a method for passivating hardware of microelectronic processing chambers are provided. The apparatus includes a substrate holder configured to support a microelectronic topography and a rotatable case with sidewalls arranged on opposing sides of the substrate holder. The method of using such an apparatus includes positioning a microelectronic topography upon a substrate holder of a processing chamber, exposing the microelectronic topography to a fluid within the processing chamber, and rotating a case of the processing chamber. The rotation is sufficient to affect movement of the fluid relative to the surface of the microelectronic topography. A method for passivating hardware of a microelectronic processing chamber includes exposing the hardware to an organic compound and subsequently exposing the hardware to an agent configured to form polar bonds with the organic compound.