Abstract: The invention relates to a microelectronic structure. In the structure, an oxygen-containing iridium layer is embedded between a silicon-containing layer and an oxygen barrier layer. The iridium layer is especially produced by a sputter process in an oxygen atmosphere with a low oxygen content. The oxygen-containing iridium layer is stale at temperatures up to 800° C. and withstands the formation of iridium silicide upon contact with the silicon-containing layer. Such micro-electronic structures are preferably used in semiconductor memories.

Abstract: A microelectronic structure has an adhesion layer which is disposed between a base substrate and a barrier layer. The adhesion layer improves the adhesion of the barrier layer on the base substrate, in particular to insulation layers provided there. Microelectronic structures of this type are preferably used in semiconductor memories. A method of fabricating such a microelectronic structure is also provided.

Abstract: A ferroelectric capacitor configuration is configured with at least two different coercitive voltages. A first electrode structure having a surface which forms at least two levels is firstly produced. A layer of ferroelectric material of varying thickness is deposited over the first electrode by spin coating. A second electrode structure is subsequently formed on the layer of ferroelectric material.