Abstract: Provided are methods of fabricating a semiconductor device including a phase change layer. Methods may include forming a dielectric layer on a substrate, forming an opening in the dielectric layer and depositing, on the substrate having the opening, a phase change layer that contains an element that lowers a process temperature of a thermal treatment process to a temperature that is lower than a melting point of the phase change layer. Methods may include migrating a portion of the phase change layer from outside the opening, into the opening by the thermal treatment process that includes the process temperature that is lower than the melting point of the phase change layer.

Abstract: A method of forming a ferroelectric layer is provided. A metal-organic source gas is provided into a chamber into which an oxidation gas is provided for a first time period to form ferroelectric grains on a substrate. A ferroelectric layer is formed by performing at least twice a step of providing a metal-organic source gas into the chamber during the first time period using a pulse method to grow the ferroelectric grains.

Abstract: Provided is a data storage device. The data storage device includes an interface, a buffer controller, a memory controller, a non-volatile memory, and a self-powered semiconductor device adjacent to and electrically connected to the buffer controller. The self-powered semiconductor device includes a semiconductor chip and a rechargeable micro-battery attached to the semiconductor chip. The rechargeable micro-battery includes a first current collector and a second current collector, which face each other, a first polarizing electrode in contact with the first current collector and facing the second current collector, a second polarizing electrode in contact with the second current collector and facing the first polarizing electrode, and an electrolyte layer formed between the first and second polarizing electrodes.

Abstract: A swirler arrangement for injecting a fluid into a tubular swirling chamber is provided. The swirler arrangement includes a first radial swirler device and a second radial swirler device. The swirler arrangement is fixed around an internal circulation zone of the tubular swirling chamber. The first radial swirler device includes first vanes, wherein the first vanes are formed to inject the fluid into the internal circulation zone with a first injecting angle. The second radial swirler device includes second vanes, wherein the second vanes are formed to inject the fluid into the internal circulation zone with a second injecting angle. The first injecting angle and the second injecting angle are defined by an angle between an injecting direction of the fluid and the tangential direction along the inner surface. A method of injecting a fluid into a tubular swirling chamber by the swirler arrangement is also provided.

Abstract: A method of forming a variable resistance memory device includes forming an opening in an insulating layer, and forming a variable resistance layer by filling the opening with an antimony rich antimony-tellurium compound.

Abstract: Provided are methods of fabricating a semiconductor device including a phase change layer. Methods may include forming a dielectric layer on a substrate, forming an opening in the dielectric layer and depositing, on the substrate having the opening, a phase change layer that contains an element that lowers a process temperature of a thermal treatment process to a temperature that is lower than a melting point of the phase change layer. Methods may include migrating a portion of the phase change layer from outside the opening, into the opening by the thermal treatment process that includes the process temperature that is lower than the melting point of the phase change layer.

Abstract: A method of fabricating a ferroelectric device includes forming a ferroelectric layer on a substrate in a reaction chamber. An inactive gas is provided into the reaction chamber while unloading the substrate therefrom to thereby substantially inhibit formation of an impurity layer on the ferroelectric layer.

Abstract: An array substrate for a liquid crystal display device includes a transparent substrate, a gate line arranged along a first direction on the transparent substrate, a gate electrode extending from the gate line, a common line arranged along the first direction adjacent to the gate line and having a protrusion, a gate insulation layer on the transparent substrate to cover the gate line, the gate electrode, and the common electrode, an active layer on the gate insulation layer and over the gate electrode, first and second ohmic contact layers on the active layer, a data line arranged along a second direction perpendicular to the first upon the gate insulation layer, a source electrode extending from the data line and contacting the first ohmic contact layer, a drain electrode spaced apart from the source electrode and contacting the second ohmic contact layer, a first capacitor electrode formed on the gate insulation layer and connected to the drain electrode, the first capacitor electrode overlapping the common

Abstract: An array substrate of a liquid crystal display device, wherein picture quality is improved without decreasing aperture ratio by providing a storage capacitor of a large capacity. The array substrate of a liquid crystal display device includes a gate line formed on an array substrate and a gate electrode diverged from the gate line. A common line composed of substantially the same material as the gate line of an opaque metal is arranged parallel to the gate line. A first electrode of a storage capacitor composed of a transparent conductive material is formed on the common line. A gate insulating film covers the gate line, the gate electrode, and the first electrode of a storage capacitor. A semiconductor layer is formed to overlap the gate electrode on the gate insulating film. A source electrode and a drain electrode are arranged with a constant interval on the semiconductor layer. A data line is connected to the source electrode and is arranged perpendicularly to the gate line.

Abstract: In a method of forming a ferroelectric capacitor, a lower electrode layer is formed on a substrate. A first crystalline layer is formed on the lower electrode layer. A ferroelectric layer is formed on the first crystalline layer. The first crystalline layer one of prevents a component of the ferroelectric layer from diffusing into the lower electrode layer and mitigates fatigue of the ferroelectric layer. An upper electrode layer is formed on the ferroelectric layer.

Abstract: A method of forming a ferroelectric layer is provided. A metal-organic source gas is provided into a chamber into which an oxidation gas is provided for a first time period to form ferroelectric grains on a substrate. A ferroelectric layer is formed by performing at least twice a step of providing a metal-organic source gas into the chamber during the first time period using a pulse method to grow the ferroelectric grains.

Abstract: An array substrate for in-plane switching (IPS) mode liquid crystal display (LCD) device includes a pixel electrode having an extension portion, a vertical portion and a horizontal portion, the extension portion being extended from the drain electrode to the pixel region, the vertical portion being vertically extended from the extension portion and the horizontal portion being over the common line and being connected to the vertical portion. The device includes a common electrode having a plurality of vertical portions and a horizontal portion, the plurality of the vertical portions being vertically extended from the common line and arranged in an alternating pattern with the vertical portion of the pixel electrode, the horizontal portion connecting the plurality of the vertical portions into one. An auxiliary line is over the horizontal portion of the pixel electrode and being overlapped with the common line.

Abstract: An array substrate for a liquid crystal display device includes a transparent substrate, a gate line arranged along a first direction on the transparent substrate, a gate electrode extending from the gate line, a common line arranged along the first direction adjacent to the gate line and having a protrusion, a gate insulation layer on the transparent substrate to cover the gate line, the gate electrode, and the common electrode, an active layer on the gate insulation layer and over the gate electrode, first and second ohmic contact layers on the active layer, a data line arranged along a second direction perpendicular to the first upon the gate insulation layer, a source electrode extending from the data line and contacting the first ohmic contact layer, a drain electrode spaced apart from the source electrode and contacting the second ohmic contact layer, a first capacitor electrode formed on the gate insulation layer and connected to the drain electrode, the first capacitor electrode overlapping the common

Abstract: The present invention relates to a foamed phenol resin body, which is useful as an oil absorbent, which is an absorbent of oil and hydrophobic liquid and a production method thereof, and relates to a method of producing an oil-absorbable foamed body, which may be simply produced, may absorb large amounts of oil even when used in small amounts, and may be formed into various foam products, such as mats, foam or rolls, depending on the types of spilled oil, in order to facilitate the absorption of oil. The present invention further relates to a foamed body produced using the method, and to a foam product using the foamed body. Accordingly, the oil absorbent of the present invention may be easily produced, and has numerous pores formed therein to facilitate the absorption of oil.

Abstract: An X-ray detecting device, and a fabricating method thereof, that reduces ground line breakage. In the device and method, a storage electrode is formed along a ground line. Accordingly, a step between the storage electrode and the ground line is prevented, which reduces ground line breakage.

Abstract: Provided are FeRAM device constructions and fabrication methods that provide for the direct connection of metal patterns to ferroelectric capacitors. The FeRAM device constructions utilize a combination of one or more barrier layers incorporated in conductive plugs, barrier layers incorporated in primary conductive patterns or conductive patterns formed using one or more noble metals to suppress parametric drift associated with conventional FeRAM constructions.

Abstract: A method of fabricating a ferroelectric device includes forming a ferroelectric layer on a substrate in a reaction chamber. An inactive gas is provided into the reaction chamber while unloading the substrate therefrom to thereby substantially inhibit formation of an impurity layer on the ferroelectric layer.

Abstract: The present invention discloses an IPS LCD device. The IPS LCD device according to the present invention implements a plurality of transparent common and pixel electrodes. Since the plurality of common and pixel electrodes are made from the transparent material on the same plane, the IPS LCD device has a high aperture ratio, a high brightness quality, and therefore a low power consumption. In another aspect, the IPS LCD device according to the present invention implements overlapped data line and outermost common electrode. To form the overlapped data line and outermost common electrode, an organic passivation layer is used such that cross talk between the data line and the outermost common electrode is prevented. Then, because the overlapped data line and outermost common electrode serve as a black matrix such that no black matrix is needed. Therefore, an aperture ratio of the IPS LCD device is further improved.

Abstract: An LCD device includes a plurality of data pads; an LCD panel defined by a plurality of pad regions; a first shorting bar connected to odd numbered data pads among the plurality of data pads; a second shorting bar connected to even numbered data pads among the plurality of data pads; and a test pad formed in a predetermined portion of a pad region among the plurality of pad regions to apply a signal voltage for on/off testing to the first shorting bar and the second shorting bar.

Abstract: The present invention relates to an alginate sponge and a preparation method thereof, more particularly to an alginate sponge having significantly improved flexibility, structural integrity, water-absorptivity, and processability, to be used for medical and tissue engineering purposes, and a simple preparation method thereof. The alginate sponge of the present invention has a maximum bend angle (flexibility) of at least 90°?, an apparent density (structural integrity) ranging from 0.006 to 0.1 glcm3, and a saline solution absorption ratio ranging from 150 to 700%.