Abstract: A multi-level memory device includes an insulating layer having an opening therein, and a multi-level cell (MLC) formed in the opening that has a resistance level varies based on the data stored therein. The MLC is configured to have a resistance level that varies as write pulses having the same pulse height and different pulse widths are applied to the MLC.

Abstract: A non-volatile memory device includes a plurality of word lines, a plurality of bit lines, and an array of variable resistance memory cells each electrically connected between a respective word line and a respective bit line. Each of the memory cells includes first and second resistance variable patterns electrically connected in series between first and second electrodes. A material composition of the first resistance variable pattern is different than a material composition of the second resistance variable pattern. Multi-bit data states of each memory cell are defined by a contiguous increase in size of a programmable high-resistance volume within the first and second resistance variable patterns.

Abstract: A method of synchronizing a first device capable of displaying video content and including the video content, and a second device capable of displaying E-book content associated with the video content and including the E-book content. The first device is connected to the second device according to a specific protocol. In response to a specific event for the video content or the E-book content occurring in one of the first and second devices, the device in which the specific event occurs generates event information about the specific event and transmits it to the other of the first and second devices, and performs the specific event according to the event information. Upon receiving the event information, the other of the first and second devices performs the specific event according to the received event information in synchronization with the device in which the specific event occurred, using synchronization information between the video content and the E-book content.

Abstract: A conductive pattern on a substrate is formed. An insulating layer having an opening exposing the conductive pattern is formed. A bottom electrode is formed on the conductive pattern and a first sidewall of the opening. A spacer is formed on the bottom electrode and a second sidewall of the opening. The spacer and the bottom electrode are formed to be lower than a top surface of the insulating layer. A data storage plug is formed on the bottom electrode and the spacer. The data storage plug has a first sidewall aligned with a sidewall of the bottom electrode and a second sidewall aligned with a sidewall of the spacer. A bit line is formed on the data storage plug.

Abstract: An apparatus for fabricating a semiconductor device includes a chamber, a processing part inside the chamber, a gas injection pipe connected to the chamber, a gas pumping pipe connected to the chamber, and a baffle assembly embedded in a chamber wall, and the baffle assembly includes a baffle plate having baffle holes, and a baffle guide surrounding an outer surface of the baffle plate.

Abstract: A method of synchronizing a first device capable of displaying video content and including the video content, and a second device capable of displaying E-book content associated with the video content and including the E-book content. The first device is connected to the second device according to a specific protocol. In response to a specific event for the video content or the E-book content occurring in one of the first and second devices, the device in which the specific event occurs generates event information about the specific event and transmits it to the other of the first and second devices, and performs the specific event according to the event information. Upon receiving the event information, the other of the first and second devices performs the specific event according to the received event information in synchronization with the device in which the specific event occurred, using synchronization information between the video content and the E-book content.

Abstract: A conductive pattern on a substrate is formed. An insulating layer having an opening exposing the conductive pattern is formed. A bottom electrode is formed on the conductive pattern and a first sidewall of the opening. A spacer is formed on the bottom electrode and a second sidewall of the opening. The spacer and the bottom electrode are formed to be lower than a top surface of the insulating layer. A data storage plug is formed on the bottom electrode and the spacer. The data storage plug has a first sidewall aligned with a sidewall of the bottom electrode and a second sidewall aligned with a sidewall of the spacer. A bit line is formed on the data storage plug.

Abstract: A nonvolatile memory device and a method of fabricating the same are provided. The nonvolatile memory device includes a conductive pillar that extends from a substrate in a first direction, a variable resistor that surrounds the conductive pillar, a switching material layer that surrounds the variable resistor, a first conductive layer that extends in a second direction, and a first electrode that extends in a third direction and contacts the first conductive layer and the switching material layer. Not one of the first, second, and third directions is parallel to another one of the first, second, and third directions.

Abstract: Disclosed herein is an apparatus for recovering residual salt from the reduced uranium metal. The apparatus comprising: an evaporating chamber accommodating mixed molten salt or a reduced uranium metal; a heating furnace surrounding the evaporating chamber to heat the mixed molten salt in the evaporating chamber; an insulator disposed over the evaporating chamber to block heat generated from the evaporating chamber, and including an evaporating pipe in a center thereof to move vapor generated from the evaporating chamber; a receiver disposed over the insulator to collect powder formed by condensing and solidifying vapor passing through the evaporating pipe; and a condenser disposed over the receiver to prevent the vapor passing through the evaporating pipe from leaking out of the apparatus.

Abstract: A phase change material layer includes a Ge-M-Te (GMT) ternary phase change material, where Ge is germanium, M is a heavy metal, and Te is tellurium. The GMT ternary phase change material may also include a dopant.

Abstract: Provided is a data storage device. The data storage device includes an interface, a buffer controller, a memory controller, a non-volatile memory, and a self-powered semiconductor device adjacent to and electrically connected to the buffer controller. The self-powered semiconductor device includes a semiconductor chip and a rechargeable micro-battery attached to the semiconductor chip. The rechargeable micro-battery includes a first current collector and a second current collector, which face each other, a first polarizing electrode in contact with the first current collector and facing the second current collector, a second polarizing electrode in contact with the second current collector and facing the first polarizing electrode, and an electrolyte layer formed between the first and second polarizing electrodes.

Abstract: A conductive pattern on a substrate is formed. An insulating layer having an opening exposing the conductive pattern is formed. A bottom electrode is formed on the conductive pattern and a first sidewall of the opening. A spacer is formed on the bottom electrode and a second sidewall of the opening. The spacer and the bottom electrode are formed to be lower than a top surface of the insulating layer. A data storage plug is formed on the bottom electrode and the spacer. The data storage plug has a first sidewall aligned with a sidewall of the bottom electrode and a second sidewall aligned with a sidewall of the spacer. A bit line is formed on the data storage plug.

Abstract: A memory device includes a substrate and a memory cell including a first electrode on the substrate, a phase-change material region on the first electrode and a second electrode on the phase-change material region opposite the first electrode. The memory device further includes a stress relief buffer adjacent a sidewall of the phase-change material region between the first and second electrodes. In some embodiments, the stress relief buffer includes a stress relief region contacting the sidewall of the phase-change material region. In further embodiments, the stress relief buffer includes a void adjacent the sidewall of the phase-change material region.

Abstract: A nonvolatile memory device and a method of fabricating the same are provided. The nonvolatile memory device includes a conductive pillar that extends from a substrate in a first direction, a variable resistor that surrounds the conductive pillar, a switching material layer that surrounds the variable resistor, a first conductive layer that extends in a second direction, and a first electrode that extends in a third direction and contacts the first conductive layer and the switching material layer. Not one of the first, second, and third directions is parallel to another one of the first, second, and third directions.

Abstract: Apparatus for fabricating a phase-change material layer include a process chamber. A first source supplier including a liquid delivery system (LDS) structure is coupled between a tellurium (Te) source container and the process chamber. A second source supplier including a bubbler method structure is coupled between at least one metal organic (MO) source container and the process chamber. Methods are also provided.

Abstract: A method of synchronizing a first device capable of displaying video content and including the video content, and a second device capable of displaying E-book content associated with the video content and including the E-book content. The first device is connected to the second device according to a specific protocol. In response to a specific event for the video content or the E-book content occurring in one of the first and second devices, the device in which the specific event occurs generates event information about the specific event and transmits it to the other of the first and second devices, and performs the specific event according to the event information. Upon receiving the event information, the other of the first and second devices performs the specific event according to the received event information in synchronization with the device in which the specific event occurred, using synchronization information between the video content and the E-book content.

Abstract: A personal learning apparatus and method using a terminal which supports an electronic book function in a wireless communication network are provided. The personal learning method includes: distributing, by a master device, learning data to the terminal within a wireless communication service area; collecting, by the master device, learning results based on the learning data from the terminal provided with the learning data; and storing, by the master device, the collected learning results.

Abstract: A multi-level memory device includes an insulating layer having an opening therein, and a multi-level cell (MLC) formed in the opening that has a resistance level varies based on the data stored therein. The MLC is configured to have a resistance level that varies as write pulses having the same pulse height and different pulse widths are applied to the MLC.

Abstract: A non-volatile memory device includes a plurality of word lines, a plurality of bit lines, and an array of variable resistance memory cells each electrically connected between a respective word line and a respective bit line. Each of the memory cells includes first and second resistance variable patterns electrically connected in series between first and second electrodes. A material composition of the first resistance variable pattern is different than a material composition of the second resistance variable pattern. Multi-bit data states of each memory cell are defined by a contiguous increase in size of a programmable high-resistance volume within the first and second resistance variable patterns.