Abstract: Each pair of gate lines GL are arranged aside a corresponding one of rows of pixel electrodes arranged in a matrix form, so as to sandwich pixel electrodes in the direction of columns, whereas each pair of TFTs are arranged to a sandwich corresponding one of the pixel electrodes, and each of data lines DL is arranged aside a corresponding one of columns of pixel electrodes. TFTs are connected to the pixel electrodes and to the gate lines GL so that the pixel electrodes of one row are selected when two of the gate lines GL sandwiching the pixel electrodes are selected. An end of a current path of each TFT is connected to the data line DL. When a pair of TFTs sandwiching one pixel electrode are simultaneously turned on, large current is supplied to the pixel electrode through the data line DL. Source electrode of TFT and source electrode of its proximate (adjacent) thin film transistor are formed by pattering the same metal layer, and share one current path connected to the data line DL.

Abstract: Gd and Bi are used as sputter sources and are simultaneously sputtered, or sputtered alternately, each time in an amount for forming a layer having a thickness of 10 atoms or less, thereby forming a thin film on a substrate, in which Gd and Bi are mixed at a ratio of 4:3. The thin film is heat-treated to form a crystalline thin film having a phase represented by Gd.sub.4 Bi.sub.3.